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    2SK2788

    Abstract: 2SK2788VYTL-E 2SK2788VYTR-E
    Text: Preliminary Datasheet 2SK2788 R07DS0511EJ0300 Previous: REJ03G1033-0200 Rev.3.00 Jul 27, 2011 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.12  typ (VGS = 10 V, ID = 1 A)  Low drive current  High speed switching


    Original     		PDF 2SK2788 R07DS0511EJ0300 REJ03G1033-0200) PLZZ0004CA-A 2SK2788 2SK2788VYTL-E 2SK2788VYTR-E

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    Abstract: No abstract text available
    Text: Preliminary Datasheet 2SK2788 R07DS0511EJ0300 Previous: REJ03G1033-0200 Rev.3.00 Jul 27, 2011 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.12  typ (VGS = 10 V, ID = 1 A)  Low drive current  High speed switching


    Original     		PDF 2SK2788 R07DS0511EJ0300 REJ03G1033-0200) PLZZ0004CA-A