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    Abstract: No abstract text available
    Text: A Business Partner of Renesas Electronics Corporation. Preliminary Data Sheet NE202930 Silicon NPN Epitaxial High Frequency Transistor R09DS0003EJ0100 Rev.1.00 Jul 14, 2010 FEATURES • • • • High transition frequency fT = 11 GHz TYP. Ideal for low noise and low distortion amplification


    Original     		PDF NE202930 R09DS0003EJ0100 NE202930-T1 NE202930-T1-A R09DS0003EJ0100 NE202930

    NE202930

    Abstract: No abstract text available
    Text: PreliminaryData Sheet NE202930 Silicon NPN Epitaxial High Frequency Transistor R09DS0003EJ0100 Rev.1.00 Jul 14, 2010 FEATURES • • • • High transition frequency fT = 11 GHz TYP. Ideal for low noise and low distortion amplification Suitable for equipments of low collector voltage Less than 5 V


    Original     		PDF NE202930 R09DS0003EJ0100 NE202930-T1 NE202930-T1-A NE202930