E678-12A
Abstract: JEDEC B12-43 R4998 TPMHB0518EA B12 diode B12-43 DY10 H6533 photomultiplier JEDEC B12-43 12DY8
Text: PHOTOMULTIPLIER TUBE R4998 Fast Time Response, 25 mm 1 Inch Diameter, 10-stage, Bialkali Photocathode, Head-On Type GENERAL Parameter Spectral Response Wavelength of Maximum Response Material Photocathode Minimum Effective Area Window Material Structure
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R4998
10-stage,
12-pin
B12-43
E678-12A
SE-171-41
TPMH1261E02
E678-12A
JEDEC B12-43
R4998
TPMHB0518EA
B12 diode
B12-43
DY10
H6533
photomultiplier JEDEC B12-43
12DY8
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PDF
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R1306
Abstract: c7319 R720501 HAMAMATSU E849 e717-63 R928, hamamatsu
Text: Photomultiplier Tubes PHOTOMULTIPLIER TUBES AND RELATED PRODUCTS Opening The Future with Photonics Human beings obtain more than 70 percent of the information visually by using their eyes. However, there are vast sums of information and unknown possibilities hidden within light not visible to the naked eye. This kind of light
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Original
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B-1348
E-08290
TPMZ0001E01
R1306
c7319
R720501
HAMAMATSU E849
e717-63
R928, hamamatsu
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PDF
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RTL8211E
Abstract: ISL6258A 88E1116R Marvell 88E1116R ISL6258 RTL8211 L6703 u9701 MCP79-B01 Q7055
Text: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV SCHEM,MBP 15"MLB ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ?
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ISL10
ISL11
RTL8211E
ISL6258A
88E1116R
Marvell 88E1116R
ISL6258
RTL8211
L6703
u9701
MCP79-B01
Q7055
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PDF
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ISL9504
Abstract: b6886 PP3V42G3H NVIDIA G84m ISL9504BCRZ C8050 12v p66 apple k50 apple M75 MLB 820-2101 PP3V42
Text: 8 6 7 2 3 4 5 CK APPD OROYA 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ? 03/20/2007 - DVT
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ISL10
ISL11
ISL9504
b6886
PP3V42G3H
NVIDIA G84m
ISL9504BCRZ
C8050 12v
p66 apple
k50 apple
M75 MLB 820-2101
PP3V42
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PDF
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RTL8211E
Abstract: Marvell 88E1116R TC7SZ08AFEAPE TLA-6T213HF C5855 88E1116R 57B8 PP3V42 NTC 15D-7 u9701
Text: 8 6 7 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE M97A MLB SCHEMATIC C 681298 PRODUCTION RELEASED DATE 03/11/09 ? REFERENCED FROM T18 03/11/2009 D .csa Date Page TABLE_TABLEOFCONTENTS_HEAD TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM
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ISL6259
Abstract: transistor C3229 ISL6258AHRTZ transistor c6074 ISL9504BCRZ of transistor c2570 transistor c3300 c3228 transistor transistor c3150 c2570 transistor
Text: 8 7 6 5 4 3 2 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ECN DESCRIPTION OF REVISION C 0000813234 CK APPD DATE PRODUCTION RELEASED 2009-11-01
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HAMAMATSU R647-01
Abstract: H3378-50 H3177-51 R7600-M64 R7600-M16
Text: Photomultiplier Tube Assemblies Photomultiplier Tube Assemblies Photomultiplier tube assemblies are made up of a photomultiplier tube, a voltagedivider circuit and other components, all integrated into a single case. TACCF0133 Max. Rating Type No. Assembly PMT
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TACCF0133
H3164-10
H3695-10
H3165-10
H6520
H6524
H6612
H6152-70
H6533
H7415
HAMAMATSU R647-01
H3378-50
H3177-51
R7600-M64
R7600-M16
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PDF
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E678-14C
Abstract: R376 photomultiplier S M R750 quartz R6095 R1635P r647 photomultiplier R647P E678-12A R1166 R3478
Text: Head On Type Photomultiplier Tubes at 25°C A B Curve Code Remarks Type No. Range (nm) D G Maximum Ratings H Cathode Sensitivity F Dynode Out- Structure Peak PhotoWindow line Wave- cathode Material No. No. of length Material Stages (nm) C Spectral Response
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R1288
R4607-01
122nm
254nm
852nm
IR-D80A.
000A/lm
E678-14C
R376 photomultiplier
S M R750 quartz
R6095
R1635P
r647 photomultiplier
R647P
E678-12A
R1166
R3478
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PDF
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R1306
Abstract: r11265u-20 HAMAMATSU R647 R8900-00-M16 R8997
Text: PHOTOMULTIPLIER TUBES AND ASSEMBLIES PHOTOMULTIPLIER TUBES AND ASSEMBLIES WEB SITE www.hamamatsu.com INTRODUCTION In radiation measurements, scintillation counters which are combinations of scintillators and photomultiplier tubes are used as most common and useful devices in detecting X-, alpha-, beta-, gamma-rays and other high energy charged particles. A scintillator
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Original
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RU-127015,
TPMO0007E03
R1306
r11265u-20
HAMAMATSU R647
R8900-00-M16
R8997
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PDF
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d7810
Abstract: L9141 MXM pinout U4900 J9002 K40 fet MARK G4 SOT363 Apple j9002 k50 apple ISL6269
Text: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. M78-DVT REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE 33 503047 ENGINEERING RELEASED
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M78-DVT
d7810
L9141
MXM pinout
U4900
J9002
K40 fet
MARK G4 SOT363
Apple j9002
k50 apple
ISL6269
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PDF
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MCP79MXT-B3
Abstract: ISL6258A ti c3931 u9701 rtl8211* Reference design L6703 C3931 88E1116R FW643E CS4206A
Text: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV SCHEM,CORNHOLE,K19 ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE
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ISL10
ISL11
MCP79MXT-B3
ISL6258A
ti c3931
u9701
rtl8211* Reference design
L6703
C3931
88E1116R
FW643E
CS4206A
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PDF
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L6703
Abstract: ISL9504 ntc 10d-7 55D8 55B3 sot23-5 32 pin Mini-DVI to VGA connector PP3V42G3H 31d6 D7950 J5550
Text: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. K36 MLB SCHEMATIC REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ?
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ITP700FLEX
L6703
ISL9504
ntc 10d-7
55D8
55B3 sot23-5
32 pin Mini-DVI to VGA connector
PP3V42G3H
31d6
D7950
J5550
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PDF
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ISL9504
Abstract: j4310 BD9828 ISL9504B NVIDIA G84m RN5VD30A-F SLG2AP101 Q7080 88E8058 PP3V42G3H
Text: 8 6 7 04/02/2007 Contents D Page TABLE_TABLEOFCONTENTS_HEAD TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM
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03/19/m
100-ohm
95-ohms
ISL10
ISL11
ISL9504
j4310
BD9828
ISL9504B
NVIDIA G84m
RN5VD30A-F
SLG2AP101
Q7080
88E8058
PP3V42G3H
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PDF
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ISL9504
Abstract: ISL9504B M75 MLB 820-2101 PP3V42G3H C8550 c7381 N8242 c5855 ISL9504 U7500 c3334 schematic diagram
Text: 8 6 7 2 3 4 5 CK APPD OROYA 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ? 03/20/2007 - DVT
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Original
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ISL10
ISL11
ISL9504
ISL9504B
M75 MLB 820-2101
PP3V42G3H
C8550
c7381
N8242
c5855
ISL9504 U7500
c3334 schematic diagram
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PDF
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ISL6258
Abstract: Diode C1280 c1295 battery C2240 3A967 820-2179 U4900 u3150 OZ9956 g5551
Text: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN SCHEM,MLB,M82 PVT 11/14/2007 ENG APPD DESCRIPTION OF CHANGE DATE DATE
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RTL8211E
Abstract: RTL8211CL reference Design MCP79 HS82117 rtl8211cl RTL8211 u9701 ISL6258A C5855 TC7SZ08AFEAPE
Text: 8 6 7 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE M97 MLB SCHEMATIC A 625211 PRODUCTION RELEASED DATE 08/29/08 ? REFERENCED FROM T18 08/27/2008 D .csa Date Page TABLE_TABLEOFCONTENTS_HEAD TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM
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e3 sot363 8pin
Abstract: ISL9504 PP3V42G3H C8050 R5370 "cross reference" k50 apple NVIDIA G84m p66 apple M75 MLB 820-2101 051-7225
Text: 8 6 7 2 3 4 5 CK APPD OROYA 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ? 03/20/2007 - DVT
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01/17/2007ER
ISL10
ISL11
e3 sot363 8pin
ISL9504
PP3V42G3H
C8050
R5370 "cross reference"
k50 apple
NVIDIA G84m
p66 apple
M75 MLB 820-2101
051-7225
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PDF
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r4363
Abstract: L9141 NTC 16D-7 MXM pinout C4253 PP2102 d7810 imac MLB ntc 10d-7 PP1013
Text: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. M72-DVT REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE 34 503014 ENGINEERING RELEASED
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Original
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M72-DVT
03/0m72
r4363
L9141
NTC 16D-7
MXM pinout
C4253
PP2102
d7810
imac MLB
ntc 10d-7
PP1013
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PDF
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h7195
Abstract: H3378-50 r7600 H3177-51 R7600-20-M64
Text: 光電子増倍管アッセンブリ 光電子増倍管アッセンブリ 光電子増倍管アッセンブリは光電子増倍管とデバイダ回路を組み合わせ、 一体化したものです。 最大定格 A 型 名 B 外形 PMT 管径 （
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H3164-10
H3695-10
H3165-10
H12690
H6520
H6524
H6612
H6152-70
H6533
H7415
h7195
H3378-50
r7600
H3177-51
R7600-20-M64
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PDF
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PP3V42G3H
Abstract: apple J8000 ISL9504 NVIDIA G84m C4740 p66 apple C8050 apple computer ad30 ok 1500 3p3 C7103
Text: 8 6 7 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 2 3 4 5 1 CK APPD SCHEM,MLB,MBP15 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ? 04/24/2007
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MBP15
ISL10
ISL11
PP3V42G3H
apple J8000
ISL9504
NVIDIA G84m
C4740
p66 apple
C8050
apple computer
ad30 ok 1500 3p3
C7103
|
PDF
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ISL9504
Abstract: pg65d U8550 SH0925 DP431 U8500 j4310 vishay CK 67A PP3V42G3H 338S0432
Text: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV SCHEM,MBP 15" MLB ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ?
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ISL10
ISL11
ISL9504
pg65d
U8550
SH0925
DP431
U8500
j4310
vishay CK 67A
PP3V42G3H
338S0432
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PDF
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