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    R5 TRANSISTOR Search Results

    R5 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    R5 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    R1751

    Abstract: Dual Long-Tailed Pair Transistor Array HFA1212 HFA3102 differential Amplifiers gain 100 Transistor Array differential amplifier R8200 differential pair transistor
    Text: Single-Ended To Differential Twisted Pair Driver TM Application Note May 1997 AN9723 Introduction cause distortion. R5 adjusts the current through both transistors, and because the gain is proportional to the emitter current R5 functions as a gain control. If the gain


    Original     		AN9723 HFA1212 R1751 Dual Long-Tailed Pair Transistor Array HFA3102 differential Amplifiers gain 100 Transistor Array differential amplifier R8200 differential pair transistor PDF

    differential pair transistor

    Abstract: AN9723 Dual Long-Tailed Pair Transistor Array HFA1212 HFA3102
    Text: Single-Ended To Differential Twisted Pair Driver Application Note May 1997 AN9723 Introduction cause distortion. R5 adjusts the current through both transistors, and because the gain is proportional to the emitter current R5 functions as a gain control. If the gain range is too


    Original     		AN9723 HFA1212 differential pair transistor AN9723 Dual Long-Tailed Pair Transistor Array HFA1212 HFA3102 PDF

    MT3S46T

    Abstract: No abstract text available
    Text: MT3S46T TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE MT3S46T VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION Unit: mm FEATURES • Low Noise Figure :NF=1.2dB @f=2GHz · High Gain:|S21e| =11.5dB (@f=2GHz) 2 Marking 3 R5 1 2 TESM


    Original     		MT3S46T MT3S46T PDF

    DC voltage meter

    Abstract: No abstract text available
    Text: KOA SPEER ELECTRONICS, INC. TN-194 R5 AHA 7/14/03 Chip Tantalum Solid Electrolytic Capacitor Type TMU CERTIFIED 1. General 1-1 Scope of Application This document applies to miniaturized chip tantalum solid electrolytic capacitors for applications in transistorized circuits of electronic devices.


    Original     		TN-194 DC voltage meter PDF

    p-channel mosfet

    Abstract: 2N7522 p-channel 200V 2n752 iGSS 80 nA Vgs 0v
    Text: Preliminary Data Sheet Repetitive Avalanche and dv/dt Rated MOSFET Transistor P-Channel 2N7522 200Volt, 0.505 Ω , RAD Hard MOSFET Package: SMD-0.5 R5 Product Summary Hex Size Technology BV DSS RDS on ID 3 RAD Hard -200V 0.505 Ω -8.0A Absolute Maximum Ratings


    Original     		2N7522 200Volt, -200V -160V, p-channel mosfet 2N7522 p-channel 200V 2n752 iGSS 80 nA Vgs 0v PDF

    MT3S111TU

    Abstract: No abstract text available
    Text: MT3S111TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111TU VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit: mm 2.1±0.1 3 R5 1 1 3 2 0.7±0.05 Marking +0.1 0.3 -0.05 High Gain: |S21e|2=12.5 dB typ. (@ f=1 GHz) 0.166±0.05


    Original     		MT3S111TU MT3S111TU PDF

    2N7524

    Abstract: smd 58a transistor 6-pin Zero-Gate Voltage Drain Current 60-VOLT 2n752 mosfet nA idss
    Text: Preliminary Data Sheet Repetitive Avalanche and dv/dt Rated MOSFET Transistor P-Channel 2N7524 60 Volt, 0.015 Ω , RAD Hard MOSFET Package: SMD-2 R5 Product Summary Hex Size Technology BV DSS RDS on ID 6 RAD Hard -60V 0.015 Ω -75*A Absolute Maximum Ratings


    Original     		2N7524 2N7524 smd 58a transistor 6-pin Zero-Gate Voltage Drain Current 60-VOLT 2n752 mosfet nA idss PDF

    2N7519

    Abstract: No abstract text available
    Text: Preliminary Data Sheet Repetitive Avalanche and dv/dt Rated MOSFET Transistor P-Channel 2N7519 30 Volt, 0.035 Ω , RAD Hard MOSFET Package: SMD-0.5 R5 Product Summary Hex Size Technology BV DSS RDS on ID 3 RAD Hard -30V 0035 Ω -22*A Absolute Maximum Ratings


    Original     		2N7519 2N7519 PDF

    Untitled

    Abstract: No abstract text available
    Text: MT3S111TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111TU VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit: mm 2.1±0.1 High Gain: |S21e| =12.5 dB typ. (@ f=1 GHz) 2 3 3 2 1. BASE 2. EMITTER 3. COLLECTOR R5 1 1 0.7±0.05


    Original     		MT3S111TU PDF

    Untitled

    Abstract: No abstract text available
    Text: MT3S111TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111TU VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit: mm 2.1±0.1 3 R5 1 1 3 2 0.7±0.05 Marking +0.1 0.3 -0.05 High Gain: |S21e|2=12.5 dB typ. (@ f=1 GHz) 0.166±0.05


    Original     		MT3S111TU 10led PDF

    HFA3046

    Abstract: 74HCT193 HFA1145 74HCT00 74HCT123 74HCT32 HA4600 HA5020 transistor 9740
    Text: TM Digital Control Selects The Number of Analog Cycles and Burst Frequency Application Note July 1997 AN9740 Authors: Alan Erzinger and Ron Mancini Introduction comparator. R6, R7, and R8 bias the long tailed transistor at 10mA which is the optimum point for speed. R5 and R6 are


    Original     		AN9740 HA4600 480MHz) HA5020 HFA1145 HA4600. HFA3046 74HCT193 HFA1145 74HCT00 74HCT123 74HCT32 transistor 9740 PDF

    INVERTER 1A 12V

    Abstract: 12v inverter circuit 2N4401 2N4403 EC31QS04 MAX1856 Si9424DY VP2-0066 33mOhm
    Text: 04/18/01 - RWY +3.5V to -12V at 300mA. This uses the MAX1856, transistors to invert the gate drive, and an inductor to make an inverter. This circuit has not been built and some tweaking may be necessary. N1 Si9424DY R7 100k 33mOhm, -20V +3.5V INPUT R5 270


    Original     		300mA. MAX1856, Si9424DY 33mOhm, 2N4403 2N4401 MAX1856 100kHz) 300mA 150uF INVERTER 1A 12V 12v inverter circuit 2N4401 2N4403 EC31QS04 VP2-0066 33mOhm PDF

    DMA366AM

    Abstract: No abstract text available
    Text: DMA366AM Tentative Total pages page DMA366AM Silicon PNP epitaxial planar type Tr1 Silicon PNP epitaxial planar type (Tr2) For digital circuit Marking Symbol : R5 Package Code : SSSMini6-F2-B Internal Connection 6 5 4 Absolute Maximum Ratings Ta = 25 °C


    Original     		DMA366AM DMA366AM PDF

    100 pf, ATC Chip Capacitor

    Abstract: motorola rf Power Transistor SMD Transistor Y14 100 pf, ATC Chip Capacitor 100A Motorola Potentiometer 8B TRANSISTOR SMD 470 resistor motorola rf device data book SMD Transistor 6f SMD potentiometer
    Text: MOTOROLA Order this document by MRF6401PHT/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF6401 PHOTOMASTER CASE 305C–02, STYLE 1 SOE200–PILL R4 R5 R6 + VCC R7 – Q1 R2 R8 R3 C9 C4 C3 C10 TL11 TL10 C5 TL5 RF INPUT C8 TL6


    Original     		MRF6401PHT/D MRF6401 SOE200 MRF6401 MRF6401PHT/D* 100 pf, ATC Chip Capacitor motorola rf Power Transistor SMD Transistor Y14 100 pf, ATC Chip Capacitor 100A Motorola Potentiometer 8B TRANSISTOR SMD 470 resistor motorola rf device data book SMD Transistor 6f SMD potentiometer PDF

    Amp. mosfet 1000 watt

    Abstract: transformer less power supply 12 volt 3A 1000 watt ferrite transformer mathcad flyback design Amp. mosfet 500 watt mosfet 1000 amper transistor m 9587 Diode fast 8 amper RM6S/CSVS-RM6S/LP-1S-8P Switchmode power supply handbook
    Text: SWITCHING POWER SUPPLY DESIGN: CONTINUOUS MODE FLYBACK CONVERTER Written by Michele Sclocchi [email protected] Application Engineer National Semiconductor Typical Flyback power supply: D4 N=18T C10 220p R5 10 16V D2 R1 49.9K N=6T D5 D3 Q1 20 - 55V N=18T


    Original     		LM5000-3 1000p LM5000 50kHz Amp. mosfet 1000 watt transformer less power supply 12 volt 3A 1000 watt ferrite transformer mathcad flyback design Amp. mosfet 500 watt mosfet 1000 amper transistor m 9587 Diode fast 8 amper RM6S/CSVS-RM6S/LP-1S-8P Switchmode power supply handbook PDF

    Untitled

    Abstract: No abstract text available
    Text: R5 5 2 8 Z SERI ES Overvoltage Protector IC with Reverse Current Protection NO.EA-313-130513 OUTLINE The R5528Z001A is a CMOS-based overvoltage protector IC with reverse current protection that use an NMOS pass transistor to achieve ultra-low on resistance Typ. 54mΩ . Overvoltage protection threshold is as high as


    Original     		EA-313-130513 R5528Z001A Room403, Room109, 10F-1, PDF

    LP3982IMM-ADJ

    Abstract: LMC7215 LP3982 MAX8860 LM385A-1
    Text: National News LP3982 February 2002 www.national.com/pf/LP/LP3982.html Low Dropout, 300 mA CMOS Linear Regulator Typical Application OUT IN R1 2M R6 180k R5 6.04M LP3982 2.2 µF FAULT 4 Cells SHDN GND LMC7215 2.2 µF R2 768k VREF LM385A-1.2V Product Availability


    Original     		LP3982 com/pf/LP/LP3982 LMC7215 LM385A-1 LP3982 MAX8860. LP3982IMM-ADJ LMC7215 MAX8860 PDF

    2N 6154 Triac

    Abstract: MSP430 TM11 TM12 TM21 TM22 TM31 TM41 TM42 631013 read switch
    Text: The Timer_A P01 MOV R5,MAINHW ; Measure pos. mains half wave SUB PRVTAR,MAINHW ; Difference is length of pos. HW ; ; If STTRIAC is not 0 0 = inactivity then the next gate ; firing is prepared ; P03 TST.B STTRIAC ; JZ P02 ; STTRIAC = 0: no activity MOV.B


    Original     		PDF

    opamp 741

    Abstract: 741 op-amp 741 opamp OP 741 Ic1-741 dual 2N3904 NPN Transistor Q1 2N2222 electret mic 741 Ic1 1N914/1N4148
    Text: Sound Activated Relay Parts List: Rx = 10K C1,C2,Cbias R1 = 1K C3 R2 = 100K C4,Cx R3 = 100K Ry R4 = 25K D1,D2 R5 = 2K7 D3 Page 1 of 1 = = = = = = 0.1uF, ceramic 1uF, electrolytic 10uF, electrolytic Relay 1N914,1N4148,NTE519 1N4001 Q1 = 2N2222,2N3904, etc.


    Original     		1N914 1N4148 NTE519 1N4001 2N2222 2N3904, N4148, NTE519. opamp 741 741 op-amp 741 opamp OP 741 Ic1-741 dual 2N3904 NPN Transistor Q1 2N2222 electret mic 741 Ic1 1N914/1N4148 PDF

    flash trigger transformer

    Abstract: xenon inverter circuit xenon light source circuit diagram flyback transformer 4kV Xenon Flash 6v 400V, DC-AC INVERTER light source xenon flash tube xenon tube "Flash tube" pulse transformer transistor
    Text: Design Note 25 Issue 2 October 1995 Flash Gun Inverter Using Super E-Line Bipolar Transistors RM 6 CORES 0.15mm GAP D3 BY206GP 10 R1 390 128 23 NEON C1 6V 100uF 10V R2 68 ZTX 300 T2 C3 750uF 350V ZTX 650 TR1 TR2 R4 1M D2 1N4148 0.1uF D1 R3 1N4148 680K R5 3M


    Original     		BY206GP 100uF 750uF 1N4148 flash trigger transformer xenon inverter circuit xenon light source circuit diagram flyback transformer 4kV Xenon Flash 6v 400V, DC-AC INVERTER light source xenon flash tube xenon tube "Flash tube" pulse transformer transistor PDF

    600 watt smps schematic viper50A

    Abstract: VIPER50 application note VIPer50 1000 watt mosfet power amplifier 500 watt smps schematic 600 watt smps schematic circuit diagram of 4000 watt smps full bridge viper 224 VIPer 50A Per50
    Text: V IP e r 5 0 /S P V IP e r 5 0 A /A S P SM PS PRIMARY I.C. PRELIM IN ARY DATA TYPE V dss In R DS o n V IP e r5 0 /S P 620V 1.5 A 5 Cl V IP e r5 0 A /A S P (*) 70 0V 1.5 A 5. 7 a (*) T a rg e t d a ta fo r V IP o w e r5 0 A /A S P FEATURE . ADJUSTABLE SWITCHING FREQUENCY UP


    OCR Scan     		VIPer50/SP VIPer50A/ASP PowerSO-10 VIPower50A/ASP 200KHZ VIPer50â 600 watt smps schematic viper50A VIPER50 application note VIPer50 1000 watt mosfet power amplifier 500 watt smps schematic 600 watt smps schematic circuit diagram of 4000 watt smps full bridge viper 224 VIPer 50A Per50 PDF

    Diode Equivalent 1n4148

    Abstract: 2n2219 equivalent transistor equivalent transistor R5 2n2219 equivalent diode 1n4148 equivalent resistor MICROWAVE TRANSISTOR equivalent diode for 1n4148 equivalent 2N2219 transistor 1N4148
    Text: Philips Semiconductors Product specification Microwave Transistors General APPLICATION INFORMATION COMPONENT DESCRIPTION VALUE A amplifier D.U.T. microwave transistor TR transistor D diode C 1,C 2 tantalum capacitor 22 nF, 50 V R1 resistor 2.2 kß ±5% R2, R3, R5, R6


    OCR Scan     		MC3403 2N2219 1N4148 Diode Equivalent 1n4148 2n2219 equivalent transistor equivalent transistor R5 2n2219 equivalent diode 1n4148 equivalent resistor MICROWAVE TRANSISTOR equivalent diode for 1n4148 equivalent 2N2219 transistor 1N4148 PDF

    Untitled

    Abstract: No abstract text available
    Text: rZ 7 Ä T# S G S -T H O M S O N iM O ig œ iiL iiera *® V IP e r5 0 /S P V IP e r5 0 A /A S P SMPS PRIMARY I.C. P R E L IM IN A R Y D A T A TYPE V dss In RDS on V IP er50/S P 620V 1.5 A 5 Q. V IP er50A /A S P (*) 700V 1.5 A 5.7 Q. (*) Target data for VIPower50A/ASP


    OCR Scan     		er50/S er50A VIPower50A/ASP T0200KHZ VIPer50A/ASP PowerSO-10 PDF

    Untitled

    Abstract: No abstract text available
    Text: r Z ^ 7 7 # S G S - T H O [ïfflo e œ M S O N V IP e r 5 0 /S P iL ie r a « ® V IP e r 5 0 A /A S P SMPS PRIMARY I.C. AD VA N C E DATA TYPE V dss In RDS on V IP e r5 0 /S P 600V 1.5 A 5 Q. V IP e r5 0 A /A S P (*) 670V 1.5 A 6 .6 Q. (*) In developm ent


    OCR Scan     		T0200KH LOWSPowerSO-10 PDF