TRANSISTOR B737
Abstract: MD80C31 smd TRANSISTOR code marking 8K 67202FV PGA300 5962-8506401MQA ERC32SIM marking code RAD SMD Transistor npn ISO DIMENSIONAL certificate formats 67205E
Text: Integrated Circuits for Aerospace and Defense Short Form 1998 16 June 1998 Publisher: TEMIC Semiconductors La Chantrerie BP 70602 44306 Nantes Cedex 03 FRANCE Fax: +33 2 40 18 19 60 E:mail [email protected] World Wide Web: http://www.temic.de 16 June 1998
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Untitled
Abstract: No abstract text available
Text: SIEM EN S 1M x 16-Bit Dynamic RAM 1 k Refresh Fast Page Mode HYB 5118160BSJ-50/-60 HYB 3118160BSJ-50/-60 Advanced Inform ation • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature • Fast Page Mode operation • Performance:
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OCR Scan
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16-Bit
5118160BSJ-50/-60
3118160BSJ-50/-60
HYB5118160
HYB3118160
102lastic
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WCs MARKING
Abstract: SMD MARKING code ASC SMD MARKING CODE RAC 5117400
Text: 4M x 4-Bit Dynamic RAM 2k & 4k Refresh Fast Page Mode HYB 5116400BJ-50/-60 HYB 5117400BJ-50/-60 HYB 3116400BJ/BT-50/-60 HYB 3117400BJ-50/-60 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature • Fast Page Mode operation
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5116400BJ-50/-60
5117400BJ-50/-60
3116400BJ/BT-50/-60
3117400BJ-50/-60
400BJ-50/-60
400BJ/BT-50/-60
P-TSOPII-26/24-1
GPX05857
WCs MARKING
SMD MARKING code ASC
SMD MARKING CODE RAC
5117400
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RAD SMD MARKING CODE
Abstract: smd diode marking code TO3
Text: STRH40N6 Rad-Hard N-channel 60 V, 30 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID • SEE radiation hardened SMD.5 Applications
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STRH40N6
STRH40N6S1
DocID18351
RAD SMD MARKING CODE
smd diode marking code TO3
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Untitled
Abstract: No abstract text available
Text: 2N5153HR Hi-Rel PNP bipolar transistor 80 V - 5 A Datasheet - production data Features 2 BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range -65°C to +200°C 3 1 TO-257 TO-39 2 3 1 • Hi-Rel PNP bipolar transistor • Linear gain characteristics
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2N5153HR
O-257
2N5153HR
O-257
DocID15386
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Untitled
Abstract: No abstract text available
Text: 2N5153HR Hi-Rel PNP bipolar transistor 80 V - 5 A Datasheet - production data Features 2 BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range -65°C to +200°C 3 1 TO-257 TO-39 2 3 1 • Hi-Rel PNP bipolar transistor • Linear gain characteristics
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2N5153HR
O-257
2N5153HR
O-257
DocID15386
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PDF
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RAD SMD MARKING CODE
Abstract: smd transistor marking 91A
Text: LM124AQML, LM124QML www.ti.com SNOSAE0K – AUGUST 2004 – REVISED MARCH 2013 LM124AQML LM124QML Low Power Quad Operational Amplifiers Check for Samples: LM124AQML, LM124QML FEATURES 1 • 2 • • • • • • • • • Available with Radiation Specification
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LM124AQML,
LM124QML
LM124AQML
LM124QML
RAD SMD MARKING CODE
smd transistor marking 91A
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Untitled
Abstract: No abstract text available
Text: LM124AQML, LM124QML www.ti.com SNOSAE0K – AUGUST 2004 – REVISED MARCH 2013 LM124AQML LM124QML Low Power Quad Operational Amplifiers Check for Samples: LM124AQML, LM124QML FEATURES 1 • 2 • • • • • • • • • Available with Radiation Specification
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LM124AQML,
LM124QML
LM124AQML
LM124QML
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IN50C
Abstract: QML-38534 IN50B Dosimeter radiation space MARKING CODE smd R05
Text: April 29, 2013 Radiation Performance Data Package RHD5900, RHD5901, RHD5902 Rev 2.0 DLA SMD Number: 5962-10241 Quad operational amplifiers Radiation Hardened by Design ELDRS: CMOS Immune Total dose: > 1 Mrad Si SEL Immune >100 MeV-cm /mg Neutron Displacement Damage
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RHD5900,
RHD5901,
RHD5902
-S-1083"
RHD5900:
inputD5902-901-1S
IN50C
QML-38534
IN50B
Dosimeter radiation space
MARKING CODE smd R05
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SPT0305
Abstract: Q67100-Q1101 q67100-q1102 WCs MARKING SMD MARKING code ASC code marking rah
Text: 4M x 4-Bit Dynamic RAM 2k & 4k Refresh Hyper Page Mode - EDO HYB 5116405BJ-50/-60 HYB 5117405BJ-50/-60 HYB 3116405BJ/BT(L)-50/-60 HYB 3117405BJ/BT-50/-60 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature
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5116405BJ-50/-60
5117405BJ-50/-60
3116405BJ/BT
3117405BJ/BT-50/-60
405BJ-50/-60
405BJ/BT
P-TSOPII-26/24-1
GPX05857
SPT0305
Q67100-Q1101
q67100-q1102
WCs MARKING
SMD MARKING code ASC
code marking rah
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smd code marking rac
Abstract: HYB3118160 HYB5118160 RAD SMD MARKING CODE
Text: 1M x 16-Bit Dynamic RAM 1k Refresh Fast Page Mode HYB 5118160BSJ-50/-60 HYB 3118160BSJ-50/-60 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature • Fast Page Mode operation • Performance: -50 -60 tRAC
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16-Bit
5118160BSJ-50/-60
3118160BSJ-50/-60
HYB5118160
HYB3118160
P-TSOPII-50/44-1
GPX05958
smd code marking rac
HYB3118160
HYB5118160
RAD SMD MARKING CODE
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smd diode marking code TO3
Abstract: military part marking symbols serial number RH1185 TRANSISTOR SMD MARKING CODE 2A TRANSISTOR SMD MARKING CODE QA QML-38534 RH1086BKK 2.5/led 7 dan marking code YR SMD ic sld microelectronics ldo
Text: February 10, 2010 Radiation Performance Data Package VRG8663-S VRG8663-S, DSCC SMD Part Number: 5962-0920702KYC Voltage regulator, negative RH1185 , adjustable Prepared by: Aeroflex Plainview, Inc. 35 South Service Road Plainview, NY 11803 1. Part Descriptions:
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VRG8663-S
VRG8663-S,
5962-0920702KYC
RH1185)
SCD8663
RH1185MK
smd diode marking code TO3
military part marking symbols serial number
RH1185
TRANSISTOR SMD MARKING CODE 2A
TRANSISTOR SMD MARKING CODE QA
QML-38534
RH1086BKK
2.5/led 7 dan
marking code YR SMD ic
sld microelectronics ldo
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SPT0305
Abstract: BST50 SMD MARKING CODE RAC HYB3118165 HYB5118165 5118165BSJ-60 5118165BSJ
Text: 1M x 16-Bit Dynamic RAM 1k Refresh Hyper Page Mode-EDO HYB 5118165BSJ/BST-50/-60 HYB 3118165BSJ/BST-50/-60 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature • Hyper Page Mode-EDO-operation • Performance:
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16-Bit
5118165BSJ/BST-50/-60
3118165BSJ/BST-50/-60
HYB5118165
HYB3118165
P-TSOPII-50/44-1
GPX05958
SPT0305
BST50
SMD MARKING CODE RAC
HYB3118165
HYB5118165
5118165BSJ-60
5118165BSJ
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SMD MARKING CODE A20
Abstract: smd marking code G16 smd transistor w19 5962-99B01 SMD MARKING CODE w19 5962-99B0103 smd transistor w18 Department of Defense 99b01 smd transistor mark E13 MARKING SMD x9
Text: REVISIONS LTR DESCRIPTION A DATE YR-MO-DA APPROVED Add case outlines U, T, and M. Add all radiation requirements. -tmh 00-02-08 Monica L. Poelking B Add 3.3 V option throughout document. - tmh 00-03-30 Monica L. Poelking C Add dose rate note 5/ to paragraph 1.5. Add dose rate requirement to
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UT06MRA
SMD MARKING CODE A20
smd marking code G16
smd transistor w19
5962-99B01
SMD MARKING CODE w19
5962-99B0103
smd transistor w18
Department of Defense 99b01
smd transistor mark E13
MARKING SMD x9
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WCs MARKING
Abstract: 514100BJ Q67100-Q759 Q67100-Q971 SMD MARKING CODE RAC code marking rah SMD MARKING code ASC
Text: 4M x 1-Bit Dynamic RAM HYB 514100BJ-50/-60 Advanced Information • 4 194 304 words by 1-bit organization • 0 to 70 °C operating temperature • Fast Page Mode Operation • Performance: -50 -60 tRAC RAS access time 50 60 ns tCAC CAS access time 13 15
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514100BJ-50/-60
P-SOJ-26/20-2
GPJ09100
WCs MARKING
514100BJ
Q67100-Q759
Q67100-Q971
SMD MARKING CODE RAC
code marking rah
SMD MARKING code ASC
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Untitled
Abstract: No abstract text available
Text: 2N5401HR Hi-Rel PNP bipolar transistor 150 V, 0.5 A Datasheet - production data Features 3 1 BVCEO 150 V IC max 0.5 A HFE at 10 V - 150 mA > 60 1 2 2 3 TO-18 LCC-3 3 • Hermetic packages • ESCC and JANS qualified 4 1 • Up to 100 krad(Si) low dose rate
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2N5401HR
2N5401HR
MIL-PRF19500
DocID16934
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QML-38534
Abstract: sld microelectronics ldo 5962-E150-10
Text: February 10, 2010 Radiation Performance Data Package VRG8662-S VRG8662-S, DSCC SMD Part Number: 5962-0920701KXC Voltage regulator, positive RH1086 , adjustable Prepared by: Aeroflex Plainview, Inc. 35 South Service Road Plainview, NY 11803 1. Part Descriptions:
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VRG8662-S
VRG8662-S,
5962-0920701KXC
RH1086)
SCD8662
RH1086BHK,
RH1086BKK,
QML-38534
sld microelectronics ldo
5962-E150-10
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marking code RAD SMD Transistor npn
Abstract: JS55
Text: 2N5551HR Hi-Rel NPN bipolar transistor 160 V, 0.5 A Datasheet - production data Features 3 1 BVCEO 160 V IC max 0.5 A HFE at 5 V - 10 mA > 80 1 2 2 3 TO-18 LCC-3 3 • Hermetic packages • ESCC and JANS qualified 4 1 • Up to 100 krad(Si) low dose rate
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2N5551HR
2N5551HR
MIL-PRF19500
DocID16935
marking code RAD SMD Transistor npn
JS55
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HTGB
Abstract: RAD SMD MARKING CODE SMD MARKING code RAD marking code RAD SMD marking code RAD
Text: LTR O A DESCRIPTION Initial Release Format and layout corrections DATE MO-DA-YR APPROVED 4/25/12 5/10/12 B. LaBelle B. LaBelle Aeroflex RAD, Inc. Proprietary UNLESS OTHERWISE SPECIFIED DIMENSIONS ARE IN INCHES PREPARED BY Dennis. Kiffe TOLERANCE ON DECIMALS
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RAD7110-NFS
MIL-PRF-19500
HTGB
RAD SMD MARKING CODE
SMD MARKING code RAD
marking code RAD SMD
marking code RAD
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Untitled
Abstract: No abstract text available
Text: LM124AQML, LM124QML www.ti.com SNOSAE0K – AUGUST 2004 – REVISED MARCH 2013 LM124AQML LM124QML Low Power Quad Operational Amplifiers Check for Samples: LM124AQML, LM124QML FEATURES 1 • 2 • • • • • • • • • Available with Radiation Specification
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LM124AQML,
LM124QML
LM124AQML
LM124QML
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Untitled
Abstract: No abstract text available
Text: STRH40N6 Rad-Hard N-channel 60 V, 30 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID • SEE radiation hardened SMD.5 Applications
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STRH40N6
STRH40N6S1
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Untitled
Abstract: No abstract text available
Text: STRH40N6 Rad-Hard N-channel 60 V, 30 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID • SEE radiation hardened SMD.5 Applications
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Original
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STRH40N6
STRH40N6S1
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PDF
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Untitled
Abstract: No abstract text available
Text: STRH40N6 Rad-Hard N-channel 60 V, 30 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID • SEE radiation hardened SMD.5 Applications
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STRH40N6
STRH40N6S1
STRH40N6SG
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STRH40N6SG
Abstract: No abstract text available
Text: STRH40N6 Rad-Hard P-channel 60 V, 30 A Power MOSFET Datasheet — production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened SMD.5 Applications
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Original
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STRH40N6
STRH40N6S1
STRH40N6SG
STRH40N6SG
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