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    MICROWAVE ASSOCIATES

    Abstract: Design of H.F. Wideband Power Transformers varian klystron 10 GHz gunn diode double balanced mixer RHG melabs circulator radar gunn diode Gunn Diode gunn diode varian design of multi section coupler
    Text: PASSIVE COMPONENTS: A BRIEF HISTORY T Fig. 1 The birth of radar. Courtesy of Varian Associates. ▼ he microwave industry is tied to the birth of radar. Figure 1 is a whimsical look at the birth of radar as portrayed in a 1960s ad for Bomac tubes. In reality, radar


    Original     		PDF 1960s MICROWAVE ASSOCIATES Design of H.F. Wideband Power Transformers varian klystron 10 GHz gunn diode double balanced mixer RHG melabs circulator radar gunn diode Gunn Diode gunn diode varian design of multi section coupler

    Untitled

    Abstract: No abstract text available
    Text: Introduzione agli accessori e connettori in composito termoplastico Introduzione agli Accessori e Connettori in Composito Termoplastico Immaginatevi lo space shuttle che decolla in un’esplosione di carburante criogenico dai suoi serbatoi esterni e dai suoi razzi, solca il cielo, entra nello spazio a velocità ipersonica e torna sulla Terra attraverso la bruciante frizione


    Original     		PDF F117A

    philips circulator 2722 162

    Abstract: uhf circulator IMPATT Diode Gunn Diode symbol isoductor IMPATT-Diode oscillator tunnel diode gunn diode generator Circulators and isolators impatt diode datasheet
    Text: PROFESSIONAL COMPONENTS DATA SHEET GENERAL Circulators and isolators 1998 Feb 20 Supersedes data of July 1994 File under Professional Components, PC06 Philips Semiconductors Circulators and isolators GENERAL non-reciprocal behaviour occurs when a RF signal,


    Original     		PDF MBK628 philips circulator 2722 162 uhf circulator IMPATT Diode Gunn Diode symbol isoductor IMPATT-Diode oscillator tunnel diode gunn diode generator Circulators and isolators impatt diode datasheet

    missile seeker

    Abstract: varactor diode for x band radar radar detector leakage police radar detector Q4000 GaAs impatt diode W band
    Text: MA45200 Series Silicon Abrupt Junction Tuning Varactors Features • HIGH Q ■ LOW LEAKAGE ■ AVAILABLE IN CHIP FORM 30 J — 'V 3 El ~ r ■ ■ ■ ■ AVAILABLE IN CERAMIC PACKAGES CUSTOM DESIGNS AVAILABLE LOW POST TUNING DRIFT FREQUENCY RANGE VHF —


    OCR Scan     		PDF MA45200 missile seeker varactor diode for x band radar radar detector leakage police radar detector Q4000 GaAs impatt diode W band

    missile seeker

    Abstract: police radar detector police radar detector detector m/a-com impatt police radar detector local oscillator frequency seeker gunn diode x band radar 46470 model impatt MA45234
    Text: M/ A - C O M S E M I C O N D t B R L N G T O N /ysKcm 11 _ ] > • S b M 2 2 1 M 00 ]:L2M2 1 ■ M I C ' . . . " MA45200 Series Silicon Abrupt Junction Tuning Varactors Features ■ HIGH Q ■ LOW LEAKAGE ■ AVAILABLE IN CHIP FORM ■ AVAILABLE IN CERAMIC PACKAGES


    OCR Scan     		PDF SbM2214 0G01S42 MA45200 missile seeker police radar detector police radar detector detector m/a-com impatt police radar detector local oscillator frequency seeker gunn diode x band radar 46470 model impatt MA45234

    Untitled

    Abstract: No abstract text available
    Text: LITTON IND/LITTON SOLI» SbE » • 5544200 0000502 b04 ■ LITT GALLIUM ARSENIDE PULSED IMPATT DIODES 9251 Series • • • • • • 5-21 GHz High Peak Output Power High Efficiency— Typically 18-20% Burnout Resistant to Circuit Mismatches High Reliability— Greater than 106 hrs M TTF


    OCR Scan     		PDF 554M5D0 000G503 N57/N58

    impatt diode

    Abstract: IMPATT MA46045 radar impatt impatt diode operation MA46046 MA46019-MA46048 MA46019 MIL-STD-750 METHOD 1031 GaAs impatt diode
    Text: JVjfacßm MA46019-MA46048 Series High Power Pulsed GaAs IMPATT Diodes Features • HIGH PEAK OUTPUT 30W AT 9.0-10.0 GHz 12W AT 8.0-10.0 GHz 10W AT 5.5-17.5 GHz ■ HIGH EFFICIENCY — TYPICALLY 20% ■ BURNOUT RESISTANCE TO CIRCUIT MISMATCHES ■ HIGH RELIABILITY


    OCR Scan     		PDF MA46019-MA46048 MA46045 MA46047 MA46019 MA46020 impatt diode IMPATT radar impatt impatt diode operation MA46046 MIL-STD-750 METHOD 1031 GaAs impatt diode

    T393D

    Abstract: impatt diode MICROWAVE ASSOCIATES impatt diode operation impatt ODS-91 radar impatt impatt diode W band
    Text: 5 6 4 2 2 1 4 M / A - C O M SEMICÖ^ffUCtÖR "t 3 MICROWAVE ASSOCIATES A ^ C O M r u n k i T C 93D 00522 D Ë^ jsm aa m oaoasaa 7= 7 // a COMPANY MA-4B600 SERIES Silicon Double D rift CW IM PATT Diodes it Description Features Silicon Double Drift IMPATT IMPact Ionization


    OCR Scan     		PDF MA-4B600 T393D impatt diode MICROWAVE ASSOCIATES impatt diode operation impatt ODS-91 radar impatt impatt diode W band

    impatt diode

    Abstract: MA460 IMPATT GaAs impatt diode MA46019-MA46048 030NH MA46046 radar impatt MIL-STD-750 METHOD 1031 MA46019
    Text: MA46019-MA46048 Series High Power Pulsed GaAs IMPATT Diodes Features • HIGH PEAK OUTPUT 30W AT 9.0-10.0 GHz 12W AT 8.0-10.0 GHz 10W AT 5.5-17.5 GHz ■ HIGH EFFICIENCY — TYPICALLY 20% ■ BURNOUT RESISTANCE TO CIRCUIT MISMATCHES ■ HIGH RELIABILITY ■ HIGH & LOW DUTY CYCLE OPERATION


    OCR Scan     		PDF MA46019-MA46048 impatt diode MA460 IMPATT GaAs impatt diode 030NH MA46046 radar impatt MIL-STD-750 METHOD 1031 MA46019

    impatt diode

    Abstract: DIODE 5H impatt 1ST11 d8030 ND8M30-1N BV-1 1ST22
    Text: NEC/ CALIFORNIA NEC 1SE D b427414 OGOnbG 1 SILICON CW IMPATT DIODE T - o 7 i ND8 SERIES OUTLINE DIMENSIONS FEATURES • HIGH POWER OUTPUT AND WIDE FREQUENCY SELECTION 3.50 W at 8 GHz 3.00 W at 11 GHz 2.20 W at 15 GHz 1.20 W at 20 GHz 0.70 W at 30 GHz 0.40 W at 40 GHz


    OCR Scan     		PDF b427414 ND8N40W ND8L60W-1T ND8J80W ND8G96W-1T impatt diode DIODE 5H impatt 1ST11 d8030 ND8M30-1N BV-1 1ST22

    impatt diode

    Abstract: apc-7 connector Z 0607 CW doppler radar impatt radar impatt AN-968 cw doppler impatt diode operation AN962
    Text: H E W L E T T ^ PA CK ARD COMPONENTS SILICON DOUBLE DRIFT IMPATT DIODES FOR CW POWER SOURCES 5082-0607 5082-0608 DIODES 5.9-8.4GHZ Features IMPATT AND STEP RECOVERY HIGH POWER O U TP U T Typically: 3W from 5.9 to 8.4 GHz HIGH EFFICIENCY LOW NOISE HIGH A M B IE N T OPERATIO N


    OCR Scan     		PDF MIL-S-19500 impatt diode apc-7 connector Z 0607 CW doppler radar impatt radar impatt AN-968 cw doppler impatt diode operation AN962

    impatt diode

    Abstract: 1ST23 ND487C2-3R nd487c1-3r ND487 ND8L60W1T impatt 1ST11 ND8M30-1N ND487C2-00
    Text: N E C / CALIFORNIA NEC 1SE D b427414 OGOnbG 1 SILICON CW IMPATT DIODE V -0 7 1 1 ND8 SERIES OUTLINE DIMENSIONS FEATURES • HIGH POWER OUTPUT AND WIDE FREQUENCY SELECTION 3.50 W at 8 GHz 3.00 W at 11 GHz 2.20 W at 15 GHz 1.20 W at 20 GHz 0.70 W at 30 GHz 0.40 W at 40 GHz


    OCR Scan     		PDF b427414 ND487C1-3R ND487C2-00 ND487C2-3P ND487C2-3R ND487R1-00 ND487R1-3P ND487R1-3R ND487R2-00 ND487R2-3P impatt diode 1ST23 ND487 ND8L60W1T impatt 1ST11 ND8M30-1N

    millimeter wave radar

    Abstract: varactor multiplier frequency multiplier X3 millimeter gunn diode IMPATT MA48701A
    Text: MA48700 Series GaAs Multiplier Varactors Features • HIGH CUTOFF FREQUENCY ■ OPERATING TEMPERATURES FROM - 65°C to + 200°C ■ GUARANTEED REPRODUCIBILITY Applications The MA48700 series of Gallium Arsenide Abrupt Junction Multiplier Varactors is specifically designed to provide


    OCR Scan     		PDF MA48700 and43 millimeter wave radar varactor multiplier frequency multiplier X3 millimeter gunn diode IMPATT MA48701A

    8-12 GHz Yig Tuned Oscillator

    Abstract: PM7015X yig oscillator hp electromagnetic pulse generator jammer SIVERS yig PM7892 PM7288X 8-12 GHz Yig Tuned filter PM7101X x-band waveguide isolators
    Text: PHILIPS & Microwave Products s iv a ts a m The Company SIVERS IMA In January 1984 the two microwave companies Sivers Lab est. 1951 and I.M.A. (est. 1975) were merged into one of the leading European supplier of microwave products: SIVERS IMA AB. The main product lines are Switches, Rotary Joints,


    OCR Scan     		PDF MIL-C-45662) S-126 17173-SILAB-S S-163 8-12 GHz Yig Tuned Oscillator PM7015X yig oscillator hp electromagnetic pulse generator jammer SIVERS yig PM7892 PM7288X 8-12 GHz Yig Tuned filter PM7101X x-band waveguide isolators

    Gunn Diode

    Abstract: gunn diode oscillator gunn diode generator Gunn Diode at power supply circuit two cavity resonator GaAs Gunn Diode 24 GaAs Gunn Diode impatt varactor diode for x band radar DIODE TH 5 N
    Text: A ffe Application Note Gunn Diode/Oscillator M514 Description The Gunn diode is a gallium arsenide GaAs device capable of converting direct current (dc) power into radio frequency (RF) power when inserted in an appropriate cavity. This RF power is the result o f a bulk negative resistance property


    OCR Scan     		PDF

    millimeter wave radar

    Abstract: DIODE ED 92 GaAs Gunn Diode 24 GaAs impatt diode W band
    Text: Afacm MA48700 Series GaAs Multiplier Varactors Features • HIGH CUTOFF FREQUENCY ■ OPERATING TEMPERATURES FROM - 65°C to + 200°C ■ GUARANTEED REPRODUCIBILITY Applications The MA48700 series of Gallium Arsenide Abrupt Junction Multiplier Varactors is specifically designed to provide


    OCR Scan     		PDF MA48700 millimeter wave radar DIODE ED 92 GaAs Gunn Diode 24 GaAs impatt diode W band

    OT239

    Abstract: BT100a 02 CQX82A TRIO TA 80W CV7351 ZP1481 CV2154 ZP1430 triac mw 151 500r PL5727
    Text: Milliard quick reference guide 1978/79 — discrete semiconductors — passive components — valves and tubes This guide gives quick reference data on Mullard electronic components. The information is deliberately abbreviated to give a rapid appreciation of salient characteristics, and to


    OCR Scan     		PDF

    BPW22A

    Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
    Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey


    OCR Scan     		PDF BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8

    IAO5 Sharp

    Abstract: free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071
    Text: SIEM EN S Semiconductor Manual Discrete Industrial Types 1974 ACY 23, ACY 32 PNP Transistors for AF pre-stages The ACY 23 and ACY 32 are alloyed germanium PNP transistors in the case 1 A 3 DIN 41871 sim. TO -1 . The leads are electrically insulated from the case. The


    OCR Scan     		PDF Q60103- thS10 to3530 to4600 to4600 IAO5 Sharp free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071

    GFB7400D

    Abstract: FEY101B TCA290A Rifa pmr 2026 EF184 ORP52 Mullard Mullard quick reference guide GZF1200 ITT A2610 YD 6409
    Text: AN INTRODUCTION TO: Cartwright ELECTRONIC COMPONENTS 517 LAWMOOR STREET DIXONS BLAZES INDUSTRIAL ESTATE GLASGOW G5 041-429 7771 Cartwright Electronic Components started trading in April, 1971 as the electronics division of John T. Cartwright & Sons ERD North Ltd . From very modest


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    stepping motor EPSON EM - 234

    Abstract: EPSON motor em 402 induction cooker fault finding diagrams ECG transistor replacement guide book free stepping motor EPSON EM 234 stepping motor EPSON em 331 S576B transistor d389 maranyl TMS1601A
    Text: Issued March 1988 8773 Data Library Contents list and semiconductor device type index Data library contents Subject Title Number Communications Equipment B. T. telephone connection system Digital compact paging system Escort 2 + 6 telephone switching system


    OCR Scan     		PDF RS232 RS232C stepping motor EPSON EM - 234 EPSON motor em 402 induction cooker fault finding diagrams ECG transistor replacement guide book free stepping motor EPSON EM 234 stepping motor EPSON em 331 S576B transistor d389 maranyl TMS1601A

    DIL Reed relay RS -349-399

    Abstract: LK NES IEC 292-1 ECG transistor replacement guide book free electrode oven calibration certificate formats dl-1d31 1a. 250v /reed relay rs 349-355 LCD LM 225X Ferroxcube pot core 6656 Semicon volume 1 l/DIL Reed relay RS -349-399 Siemens Optoelectronic Data Book
    Text: Issued November 1987 8420 Data Library Contents list and semiconductor device type index Data library contents Subject Title Number Communications Equipment B.T. telephone connection system Digital compact paging system Escort 2 + 6 telephone switching system


    OCR Scan     		PDF