Untitled
Abstract: No abstract text available
Text: Standard Products PWM5031 / PWM5032 RadHard High Speed PWM Controller www.aeroflex.com/RadHard November 3, 2008 FEATURES ❑ Radiation hardness: - Total dose 1MRad Si - Single event latchup (SEL) immune to 100MeV-cm2 /mg - Single event upset (SEU) 20MeV-cm2 /mg
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PWM5031
PWM5032
100MeV-cm2
20MeV-cm2
SCD5031
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5962-0625102KXA
Abstract: PWM5032-EM2 5962-0625102KYC PWM5034
Text: Standard Products PWM5031 / PWM5032 RadHard High Speed PWM Controller www.aeroflex.com/RadHard April 4, 2008 FEATURES ❑ Radiation hardness: - Total dose 1MRad Si - Single event upset (SEU) 100MeV-cm2 /mg ❑ CMOS low power design Sleep & enable control lines
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PWM5031
PWM5032
100MeV-cm2
PWM5034
PMW5032
SCD5031
5962-0625102KXA
PWM5032-EM2
5962-0625102KYC
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actel PLL schematic
Abstract: 624 CCGA hardness tester radhard overview HX2000 RH1020 RH1280 XC8100 624-CCGA 256-CQFP
Text: Semicustom Products FPGA to ASIC Conversions Fact Sheet July 2010 OVERVIEW Aeroflex Colorado Springs has over 20 years experience in converting FPGA and 3rd-party ASIC netlists into Aeroflex RadHard and non-RadHard ASICs. We maintain a growing database of FPGA and 3rd-party ASIC cell libraries used for conversion, and
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RH1020,
RH1280,
RT54SX32S/72S,
RTAX250S/1000S/2000S
XC2/3/4000,
XC8100,
EMP5/7000
HR2/3000,
HX2000
actel PLL schematic
624 CCGA
hardness tester
radhard overview
HX2000
RH1020
RH1280
XC8100
624-CCGA
256-CQFP
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folded cascode second stage
Abstract: No abstract text available
Text: Standard Products PWM5031 / PWM5032 RadHard High Speed PWM Controller www.aeroflex.com/RadHard March 30, 2006 FEATURES ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ Radiation hardness: - Total dose 1MRad Si - Single event upset (SEU) 100MeV-cm2 /mg
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PWM5031
PWM5032
100MeV-cm2
24-Gull
SCD5031
folded cascode second stage
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25A45
Abstract: UC1843x
Text: Standard Products ACT5031 RadHard High Speed PWM Controller www.aeroflex.com/RadHard March 21, 2005 FEATURES ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ a n i y r Radiation Hardness: - Total Dose 100 KRad Si - Single Event Upset 80MeV-cm2 /mg
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ACT5031
80MeV-cm2
24-lead,
SCD5031
25A45
UC1843x
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Untitled
Abstract: No abstract text available
Text: Standard Products PWM5031 / PWM5032 RadHard High Speed PWM Controller www.aeroflex.com/RadHard February 8, 2007 FEATURES ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ Radiation hardness: - Total dose 1MRad Si - Single event upset (SEU) 100MeV-cm2 /mg
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PWM5031
PWM5032
100MeV-cm2
24-Gull
SCD5031
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AN5031
Abstract: No abstract text available
Text: Standard Products PWM5031 / PWM5032 RadHard High Speed PWM Controller www.aeroflex.com/RadHard November 2, 2007 FEATURES ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ Radiation hardness: - Total dose 1MRad Si - Single event upset (SEU) 100MeV-cm2 /mg
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PWM5031
PWM5032
100MeV-cm2
24-Gull
SCD5031
AN5031
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UT7R995
Abstract: quartz 100MHZ UT7R9951 MN54AC25C85
Text: UT7R995 RadClockTM RadHard Clock Generation and Distribution UT7R995 Products TM Executive Product Overview RadClock Date: February 2005 The Clock Problem Serious Challenges to Timing Margin Part-to-Part Skew & Jitter Problems Current Clock Network Solution
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UT7R995
UT23RH16
UT23RH12
UT89535
UT7R9951
12mA/24mA
quartz 100MHZ
MN54AC25C85
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mil-std-1553b SPECIFICATION
Abstract: honeywell dcs manual smd code A1t MIL-STD-1773 A1t smd TSI S 14001 1553 SUmmit me 555 AS1773 UT69151
Text: S f.lMMIT TM Reference Manual Aeroflex Colorado Springs 4350 Centennial Blvd. Colorado Springs, CO 80907 719-594-8000, 719-594-8468 fax www.aeroflex.com/radhard SJ.1MMITTMReference Manual Table of Contents Overview Presentation Section 1 Engineering Notebooks
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MC68HC11
UT69151
80C51
31-0-01-D1
31-o-o1-aJ
mil-std-1553b SPECIFICATION
honeywell dcs manual
smd code A1t
MIL-STD-1773
A1t smd
TSI S 14001
1553 SUmmit
me 555
AS1773
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vcsel spice model
Abstract: magnetic stripe data conversion ir sensor interface with 8051 laser diode spice modeling micron fuse resistors "x-ray detector" VCSEL photodiode L035 interfacing 8051 with magnetic stripe readers metal detector plans
Text: RadHard Mixed-Signal Overview Aeroflex Colorado Springs April 2007 www.aeroflex.com/RadHardASIC Mixed-Signal Product Line T What we do…. – We connect real world, analog signals to digital systems – We provide the critical link between sensors and information systems
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MSI Logic
Abstract: Structure of D flip-flop UNITED TECHNOLOGIES MICROELECTRONICS CENTER "radhard" overview Upset
Text: Single Event Upset Design Techniques for UTMC’s RadHard MSI Logic Family Overview A Single Event Upset SEU is the result of an ion transitioning through a semiconductor structure and depositing charge on a critical circuit node within that structure. In a CMOS logic circuit,
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PWM5032
Abstract: No abstract text available
Text: Standard Products Datasheet PWM5032 RadHard High Speed PWM Controller Radiation Tolerant www.aeroflex.com/PWM March 27, 2015 FEATURES Radiation performance - Total dose > 1 Mrad Si , Dose rate = 50 - 300 rads(Si)/s - SEL: Immune to 100 MeV-cm2/mg - SEU:
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PWM5032
SCD5031
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Untitled
Abstract: No abstract text available
Text: Standard Products Datasheet PWM5032 RadHard High Speed PWM Controller Radiation Tolerant www.aeroflex.com/PWM April 7, 2014 FEATURES ❑ Radiation performance - Total dose > 1 Mrad Si , Dose rate = 50 - 300 rads(Si)/s - SEL: Immune to 100 MeV-cm2/mg - SEU:
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PWM5032
selecta8-4585
SCD5031
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Untitled
Abstract: No abstract text available
Text: Semicustom Products UT90nSDTC-EVB, 3.125 Gbps Quad-lane SerDes Macro Evaluation Board Data Sheet February 2014 www.aeroflex.com/RadHardASIC FEATURES Aeroflex UT90nHBD 3.125 Gbps SerDes Macro transceiver, CMOS9SF RadHard-by-Design SMA interfaced Quad Full-Duplex High-Speed Serial
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UT90nSDTC-EVB,
UT90nHBD
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simple on/off temperature control circuits
Abstract: CT2100-400
Text: Standard Products CT2100-400 Microprocessor Controlled QUAD Solid State Relay www.aeroflex.com/RadHard October 16, 2006 FEATURES ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ 4 Independent 1.0 amp switches 600 Volts isolation between switches Operates from a 5 Volt logic and 15 Volt bias
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CT2100-400
MIL-STD-883
40-pins,
SCDCT2100
simple on/off temperature control circuits
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NIN18
Abstract: No abstract text available
Text: Standard Products PWM5032 RadHard High Speed PWM Controller Radiation Tolerant www.aeroflex.com/PWM March 26, 2012 FEATURES ❑ Radiation performance - Total dose > 1 Mrad Si , Dose rate = 50 - 300 rads(Si)/s - SEL: Immune to 100 MeV-cm2/mg - SEU: Immune up to 20 MeV-cm2/mg
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PWM5032
SCD5031
NIN18
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PWM5032
Abstract: PWM5032-001-2S PWM5032-S PWM5032-001-1S pmw5032 16PF PWM5031
Text: Standard Products PWM5032 RadHard High Speed PWM Controller Radiation Tolerant www.aeroflex.com/PWM April 22, 2010 FEATURES ❑ Radiation performance - Total dose 1 Mrad Si , Dose rate = 50 - 300 rads(Si)/s - SEL: Immune to 100 MeV-cm2/mg - SEU: Immune up to 20 MeV-cm2/mg
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PWM5032
SCD5031
PWM5032-001-2S
PWM5032-S
PWM5032-001-1S
pmw5032
16PF
PWM5031
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PWM5032
Abstract: No abstract text available
Text: Standard Products PWM5032 RadHard High Speed PWM Controller Radiation Tolerant www.aeroflex.com/PWM March 26, 2012 FEATURES ❑ Radiation performance - Total dose > 1 Mrad Si , Dose rate = 50 - 300 rads(Si)/s - SEL: Immune to 100 MeV-cm2/mg - SEU: Immune up to 20 MeV-cm2/mg
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PWM5032
err-4585
SCD5031
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UC1843x
Abstract: transistor 2N2222 SMD configuration 25A45 PWM5031 PWM5031-7 5v to 20v pwm amplifier 40khz folded cascode current mirror op amp
Text: Standard Products PWM5031 RadHard High Speed PWM Controller www.aeroflex.com/Power August 2, 2005 y r a n i il m e r P FEATURES ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ Radiation Hardness: - Total Dose 1MRad Si - Single Event Upset (SEU) 100MeV-cm2 /mg
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PWM5031
100MeV-cm2
SCD5031
UC1843x
transistor 2N2222 SMD configuration
25A45
PWM5031-7
5v to 20v pwm amplifier 40khz
folded cascode current mirror op amp
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UT8ER512K32
Abstract: RAMDE scrub SRAM edac UT8ER512K32S
Text: Aeroflex Colorado Springs Application Note Designing with the UT8ER512K32 Monolithic 16M RadHardTM SRAM 1. Introduction This application note describes how to use the UT8ER512K32 Monolithic 16M RadHard SRAM in different system configurations, including a detailed look at the bus signals and CPU interface. The reader will also gain an understanding of how error detection and correction EDAC functions and improves error rate.
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UT8ER512K32
70000h
7FF00h
3A500h
55A00h
10500h
000XXh
RAMDE
scrub
SRAM edac
UT8ER512K32S
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RT54SX72SU
Abstract: rt54sx32su silicon sculptor 3 54SX16A BP-1710 rt1280 Actel a1280 ACT2 A1280 AC225 A32140DX PQ208
Text: Application Note AC225 Programming Antifuse Devices Introduction This document provides an overview of the various programming options available for the Actel antifuse families. In addition, it provides helpful information relating to programming failures, including measures
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AC225
RT54SX72SU
rt54sx32su
silicon sculptor 3
54SX16A
BP-1710
rt1280
Actel a1280
ACT2 A1280
AC225
A32140DX PQ208
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5962F8762401VXA
Abstract: 5962F8762401vxc 5962F8776003VXA RHFAC164245 RHFAC2525K01V 54ac164245 5962F8761401VXC 5962F8760901VXA 5962F8755201VXC 5962R9858008VYC
Text: 54ACxxxx 54ACTxxxx Rad-hard advanced high-speed 5 V CMOS logic series Data brief Features • 2 to 6 V operating voltage ■ High speed TPD = 4.5 ns typ ■ Low DC power dissipation: 8 µA max ■ Symmetrical 24 mA outputs characteristics ■ High noise immunity: 28% of min VCC
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54ACxxxx
54ACTxxxx
Mil1019
Flat-14
DIL-14y
5962F8762401VXA
5962F8762401vxc
5962F8776003VXA
RHFAC164245
RHFAC2525K01V
54ac164245
5962F8761401VXC
5962F8760901VXA
5962F8755201VXC
5962R9858008VYC
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54HC4053
Abstract: 940104801F 940900701F 54HC08 940806401F M54HC245K 54HC273 920110501F 940104701F 920110601F
Text: M54HCxxx M54HCTxxx Rad-hard high speed 2 to 6 V CMOS logic series Features • 2 to 6 V operating voltage ■ Low power DC dissipation: 1 µA max at 25°C ■ High speed TPD = 8 ns typ at 25°C ■ Symmetrical outputs characteristics ■ High noise immunity: 28% of min VCC
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M54HCxxx
M54HCTxxx
Flat-14
DIL-14
Flat-16
DIL-16
Flat-20
DIL-20
Flat-24
DIL-24
54HC4053
940104801F
940900701F
54HC08
940806401F
M54HC245K
54HC273
920110501F
940104701F
920110601F
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Structure of D flip-flop
Abstract: No abstract text available
Text: Single Event Upset Design Techniques for UTMC’s Rad-Hard MSI Logic Family Overview A Single Event Upset SEU is the result of an ion transitioning through a semiconductor struc ture and depositing charge on a critical circuit node within that structure. In a CMOS logic circuit,
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