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    RADIAN Price and Stock

    Lattice Semiconductor Corporation LSC-SW-RADIANT-FL

    SW RADIANT 1YR FLOAT
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    DigiKey LSC-SW-RADIANT-FL No Container 1
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    Mouser Electronics LSC-SW-RADIANT-FL
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    Newark LSC-SW-RADIANT-FL Bulk 1
    • 1 $4239.95
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    Lattice Semiconductor Corporation LSC-SW-RADIANT-NL

    SW RADIANT 1YR NODE LOCK
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    DigiKey LSC-SW-RADIANT-NL No Container 1
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    Mouser Electronics LSC-SW-RADIANT-NL
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    Newark LSC-SW-RADIANT-NL Bulk 1
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    Lattice Semiconductor Corporation LSC-SW-RADIANT-NL-R

    SW RENEW RADIANT 1YR NODE LOCK
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    DigiKey LSC-SW-RADIANT-NL-R No Container 1
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    Newark LSC-SW-RADIANT-NL-R Bulk 1
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    Lattice Semiconductor Corporation LSC-SW-RADIANT-FL-R

    SW RENEW RADIANT 1YR FLOAT
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    DigiKey LSC-SW-RADIANT-FL-R No Container 1
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    Mouser Electronics LSC-SW-RADIANT-FL-R
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    Newark LSC-SW-RADIANT-FL-R Bulk 1
    • 1 $3602.17
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    Lattice Semiconductor Corporation LSC-SW-RADIANTRT-NL

    SW RADIANT RT 1YR NODE LOCK
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    DigiKey LSC-SW-RADIANTRT-NL No Container 1
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    Mouser Electronics LSC-SW-RADIANTRT-NL
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    Newark LSC-SW-RADIANTRT-NL Bulk 1
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    RADIAN Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CS1930V01 Radian Heatsinks Accessories, 1.57X1.57X0.5 PLATE FIN HEAT SINK Original PDF
    CS2290 Radian Heatsinks Accessories, 25mm Round Pin BGA Heatsink Original PDF
    CS2290V01 Radian Heatsinks Accessories, 25 MM x 10 MM EZ SNAP HEAT SINK ASSEMBLY Original PDF

    RADIAN Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: TLN1108 T11 TOSHIBA Infrared LED GaAℓAs Infrared Emitter TLN1108(T11) Unit: mm ○ Infrared LED for Space-Optical-Transmission ○ Light Source for Infrared Cameras ○ Opto-Electronic Switches • Surface-mount devices • Package size • High radiant power : PO = 70mW (typ.) @100mA


    Original     		TLN1108 18mW/sr 100mA 100mA PDF

    TEFD4300

    Abstract: APPLICATION CIRCUIT OF TSAL4400
    Text: TEFD4300 www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • High radiant sensitivity • Suitable for visible and near infrared radiation • Fast response times


    Original     		TEFD4300 VSLB3940, TSUS4300, TSAL4400 2002/95/EC 2002/96/EC TEFD4300 2011/65/EU 2002/95/EC. APPLICATION CIRCUIT OF TSAL4400 PDF

    Untitled

    Abstract: No abstract text available
    Text: TEMD5010X01 www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: surface mount • Package form: top view • Dimensions L x W x H in mm : 5 x 4.24 x 1.12 • Radiant sensitive area (in mm2): 7.5 • AEC-Q101 qualified • High photo sensitivity


    Original     		TEMD5010X01 AEC-Q101 J-STD-020 2002/95/EC 2002/96/EC TEMD5010X01 2011/65/EU 2002/95/EC. 2011/65/EU. PDF

    pn photodiode

    Abstract: No abstract text available
    Text: BPW21R www.vishay.com Vishay Semiconductors Silicon Photodiode FEATURES • Package type: leaded • Package form: TO-5 • Dimensions in mm : Ø 8.13 • Radiant sensitive area (in mm2): 7.5 • High photo sensitivity • Adapted to human eye responsivity


    Original     		BPW21R 2002/95/EC 2002/96/EC BPW21R 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 pn photodiode PDF

    Untitled

    Abstract: No abstract text available
    Text: BPV11F Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm emitters • Fast response times


    Original     		BPV11F BPV11F 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: BPV10NF www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Radiant sensitive area (in mm2): 0.78 • Leads with stand-off • High radiant sensitivity • Daylight blocking filter matched with 870 nm to 950 nm


    Original     		BPV10NF BPV10NF 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSTS710. Vishay Telefunken GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case Description TSTS710. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO–18 package. Their glass lenses provide a very high radiant intensity without external optics.


    Original     		TSTS710. D-74025 20-May-99 PDF

    Untitled

    Abstract: No abstract text available
    Text: T1110P6 Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 2.97 x 2.97 x 0.28 • Radiant sensitive area (in mm2): 7.5 • High photo sensitivity • High radiant sensitivity


    Original     		T1110P6 2002/95/EC 2002/96/EC T1110P6 18-Jul-08 PDF

    optical sensor

    Abstract: amplifire Circuit current amplifire circuit diagram 5v infrared camera
    Text: Visible Radiant Optical Sensor /Data Sheet TDK Visible Radiant Optical Sensor is the photo-IC which uses an amorphous silicone semiconductor technology. It is the most suitable for Brightness Adjustment, Control of the Lighting systems. BCS2015A1 has currentamplifire in it. BCS2015A1 is for surface mounthing.


    Original     		BCS2015A1 245deg 255deg 230deg 180deg 30sec 40sec 150deg optical sensor amplifire Circuit current amplifire circuit diagram 5v infrared camera PDF

    Untitled

    Abstract: No abstract text available
    Text: 10RS RADIANT ENERGY Series Special Purpose Controls Snap-Action Radiant Control The 10RS line of controls from Therm-O-Disc offers reliable sensing of radiant energy in hot surface ignition applications. The unique snap-action bimetal design not only provides high-speed contact separation and


    Original     		PDF

    1105W-RR

    Abstract: AN1105W
    Text: AN1105W Surface Mount IRED/Dome Lens Type Features Package Product features 3216 Dome lens type, Water clear epoxy ・Outer Dimension 3.2 x 1.6 x 1.85mm L x W x H ・High Radiant Intensity : 1.4mW/sr TYP. (IF=20mA) ・Total Output Power : 2mW TYP. (IF=20mA)


    Original     		AN1105W 950nm 000pcs 1105W-RR AN1105W PDF

    TSTS710

    Abstract: No abstract text available
    Text: Tem ic TSTS710. S e m i c o n d u c t o r s GaAs IR Emitting Diodes in Hermetically Sealed TO 18 Case Description TSTS710. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed T O -18 pack­ age. Their glass lenses provide a very high radiant


    OCR Scan     		TSTS710. D-74025 15-Jul-96 TSTS710 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SFH2115 GaAs ENERGY CONVERTER Package Dimensions in mm FEATURES • • • • 8 Diodes Connected in Serle* T 0 18 Package Floating Output Signal FC Connector for use with 200 Fiber, NA=0.37 Characteristics TA=25“C Parameter Radiant Input Power


    OCR Scan     		SFH2115 PDF

    TSTA7100

    Abstract: No abstract text available
    Text: Temic TSTA7100 Semiconductors GaAlAs IR Emitting Diode, Hermetically Sealed TO 18 Case Description TSTA7100 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO-18 package. Its glass lens provides a very high radiant


    OCR Scan     		TSTA7100 TSTA7100 D-74025 15-Jul-96 PDF

    lm 7914

    Abstract: kostal
    Text: Tem ic TSKS5412X01 S e m i c o n d u c t o r s GaAs Infrared Emitting Diode in Side View Package Description TSKS5412 is a standard GaAs infrared emitting diode in a flat sideview molded plastic package. A small recessed spherical lens provides an improved radiant intensity in


    OCR Scan     		TSKS5412X01 TSKS5412 TEKS5412 D-74025 15-Oct-98 lm 7914 kostal PDF

    Untitled

    Abstract: No abstract text available
    Text: Tem ic TSTA7100 Semiconductors GaAlAs IR Emitting Diode, Hermetically Sealed TO 18 Case Description TSTA 7100 is a high efficiency infrared em itting diode in G aA lA s on G aA lA s technology in a herm etically sealed T O -1 8 package. Its glass lens provides a very high radiant


    OCR Scan     		TSTA7100 15-Jul-96 PDF

    8021C

    Abstract: No abstract text available
    Text: Tem ic TSTS730. S e m i c o n d u c t o r s GaAs IR Emitting Diodes in Hermetically Sealed TO 18 Case Description The TSTS730. series are infrared emitting diodes in stan­ dard GaAs technology in a hermetically sealed T O -18 package. Their glass lenses provide a high radiant inten­


    OCR Scan     		TSTS730. D-74025 15-Jul-96 8021C PDF

    laser light source

    Abstract: LASER 3mW LN7301S 15-30mA
    Text: Panasonic Semiconductor Laser LN7301S 1.3|im Band InGaAsP Semiconductor Laser Light source for optical fiber communications • Features • Low threshold current • High-efficiency • High-speed response • Built in PIN photodiode used for radiant power monitor


    OCR Scan     		LN7301S laser light source LASER 3mW LN7301S 15-30mA PDF

    tic 105

    Abstract: No abstract text available
    Text: • ABSOLUTE MAXIMUM RATINGS Ta=25°C • Storage Temperature Range . . • Operating Temperature- 30°C ~ + iOOcC - 25 °C - + 60°(’ ■ ELECTRICAL AND RADIANT CHARACTERISTICS ( Ta=25T: )


    OCR Scan     		BLO-26GS01 CATH03E) tic 105 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Silizium-PIN-Fotodiode mit Tageslichtsperrfilter Silicon-PIN-Photodiode with Daylight Filter Area not fla t SFH 205 SFH 206 Radiant sensitive area Cathode i L •«-; r-s _ t o -si 1 _ A- 3.7 GE0Û665 A p pro x. w e ig h t 0 .25 g Area not fla t 0 .6 x 0 .5


    OCR Scan     		00575flfl fl235bOS PDF

    Untitled

    Abstract: No abstract text available
    Text: HFE4837 High Speed Fiber Optic LED FI8Efl209.TIF D ESCRIPTIO N The HFE4837 is a high radiance GaAIAs 850 nanometer LED optimized for coupling into small fiber core diameters at a forward current of 10 to 100 mA. The patented "Caprock" LED chip combines high power


    OCR Scan     		HFE4837 FI8Efl209 HFE4837 FE4837 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Silizium-4-Quadranten-Fotodiode Silicon Four Quadrant Photodiode Chip position • SFH 234 S Common Cathode 2.0 s 0.45 i— L LO O Ni O OCO ct>ct> c o c o c d m* ^ rrfl 3 .0 j _14.5 12.5" 0.3max Radiant sensitive area 0.5x0.5mm each Approx. weight 1.5 g


    OCR Scan     		fl235b05 6535b05 PDF

    OPF370A

    Abstract: OPF370B OPF370C OPF370D
    Text: OPTEK Product Bulletin OPF370 January 1998 Fiber Optic GaAIAs LED Types OPF370A, OPF37QB, OPF37QC, OPF37ÛD Features Absolute Maximum Ratings Ta = 25° C unless otherwise noted • Electrically Isolated plastic cap package • High radiant output for fiber optic


    OCR Scan     		OPF370 OPF370A, OPF370B, OPF370C, OPF370D OPF370A OPF370B OPF370C OPF370D PDF

    DDD173S

    Abstract: OP290 OP291 OP292
    Text: This Material C o p y r i g h t e d B y Its R e s p e c t i v e M a n u f a c t u r e r This Material C o p y r i g h t e d B y Its R e s p e c t i v e M a n u f a c t u r e r 0 .O P I E K Types OP290, OP291, OP292 Series Typical Performance Curvet Perrant Chang« in Radiant


    OCR Scan     		OP290, OP291, OP292 100/n. 0P291I0P593 OP29BIOP598 0P295I0P598 OP29DIOP593 DDD173S OP290 OP291 PDF