Untitled
Abstract: No abstract text available
Text: 10RS RADIANT ENERGY Series Special Purpose Controls Snap-Action Radiant Control The 10RS line of controls from Therm-O-Disc offers reliable sensing of radiant energy in hot surface ignition applications. The unique snap-action bimetal design not only provides high-speed contact separation and
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Untitled
Abstract: No abstract text available
Text: LED CHAPTER 08 1 Features 2 Structure 3 Operating principle 4 Characteristics 4-1 4-2 4-3 4-4 4-5 4-6 4-7 4-8 Radiant flux total light amount Radiant intensity Irradiance Forward current vs. forward voltage characteristics Radiant flux vs. forward current characteristics
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KLEDB0373EB
KLEDB0380EA
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Untitled
Abstract: No abstract text available
Text: TLN110 F TOSHIBA Infrared LED GaAs Infrared Emitter TLN110(F) Lead Free Product Remote−control Systems Opto−electronic Switches Unit: mm • High radiant intensity: IE = 30mW / sr (typ.) • Excellent radiant−intensity linearity. Modulation by pulse operation
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TLN110
TPS703
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TLN110
Abstract: TPS703
Text: TLN110 F TOSHIBA Infrared LED GaAs Infrared Emitter TLN110(F) Lead Free Product Unit: mm Remote−control Systems Opto−electronic Switches • High radiant intensity: IE = 30mW / sr (typ.) • Excellent radiant−intensity linearity. Modulation by pulse operation
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TLN110
TPS703
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IEC-60050
Abstract: PHOTOVOLTAIC CELL at 25 degree celsius photodiode application lux meter human eye IEC60050 IEC60747-5-1 IEC60747-5-2 IEC60747-5-3 IEC60825-1 IEC-60050-845 circuit diagram of luminous metal detector
Text: Symbols and Terminology Vishay Semiconductors Symbols and Terminology A A Anode, anode terminal ampere SI unit of electrical current A Radiant sensitive area That area which is radiant sensitive for a specified range a Distance e.g. between the emitter source and
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25-Aug-06
IEC-60050
PHOTOVOLTAIC CELL at 25 degree celsius
photodiode application lux meter human eye
IEC60050
IEC60747-5-1
IEC60747-5-2
IEC60747-5-3
IEC60825-1
IEC-60050-845
circuit diagram of luminous metal detector
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PDF
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Untitled
Abstract: No abstract text available
Text: TLN110 F TOSHIBA Infrared LED GaAs Infrared Emitter TLN110(F) Lead(Pb)-Free Remote−control Systems Opto−electronic Switches Unit: mm • High radiant intensity: IE = 30mW / sr (typ.) • Excellent radiant−intensity linearity. Modulation by pulse operation
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TLN110
TPS703
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symbols
Abstract: No abstract text available
Text: Symbols and Terminology Vishay Semiconductors Symbols and Terminology A anode Anode terminal A ampere SI unit of electrical current A radiant sensitive area That area which is radiant sensitive for a specified range a distance E.g. a distance between the emitter source
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06-Oct-06
symbols
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IEC747-5
Abstract: photodiode lumen
Text: Tem ic Semiconductors Symbols and Terminology Symbols alphabetically A Anode, anode terminal A Radiant sensitive area That area which is radiant sensitive for a specified range a Distance between the emitter source and the detector B Base, base terminal
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TLN115
Abstract: TLN115A TPS703
Text: TLN115A F TOSHIBA Infrared LED GaAs Infrared Emitter TLN115A(F) Unit: mm Lead Free Product Remote−control Systems • High radiant intensity: IE = 26mW / sr (typ.) • Wide half−angle value: θ1/2 = ±21° (typ.) • Excellent radiant−intensity linearity. Modulation by pulse operation
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TLN115A
TPS703
75ailure
TLN115
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LED905_35_22
Abstract: No abstract text available
Text: High Speed Infrared Emitting Diode, 905 nm, GaAlAs Double Hetero Features • High modulation bandwidth 10 MHz • • • • • • • • • • Extra high radiant power and radiant intensity Low forward voltage Suitable for high pulse current operation
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2002/95/EC
2002/96/EC
led905
LED905_35_22
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IEC-60050
Abstract: IEC-60050-845 IEC60050 IEC60747-5-1 IEC60747-5-3 IEC50 IC specification terminology IEC60747-5-2 IEC60825-1 short distance measurement ir infrared diode
Text: Symbols and Terminology Vishay Semiconductors Symbols and Terminology A anode Anode terminal A ampere SI unit of electrical current A radiant sensitive area That area which is radiant sensitive for a specified range a distance E.g. a distance between the emitter source
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Original
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06-Oct-06
IEC-60050
IEC-60050-845
IEC60050
IEC60747-5-1
IEC60747-5-3
IEC50
IC specification terminology
IEC60747-5-2
IEC60825-1
short distance measurement ir infrared diode
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PDF
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IEC-60050
Abstract: IEC-60050-845 IEC60050 IEC50 IEC60747-5-1 IEC60747-5-2 IEC60747-5-3 IEC60825-1
Text: VISHAY Vishay Semiconductors Symbols and Terminology A A A a B BER bit/s Anode, anode terminal ampere SI unit of electrical current Radiant sensitive area That area which is radiant sensitive for a specified range Distance e.g. between the emitter source
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17-Oct-03
IEC-60050
IEC-60050-845
IEC60050
IEC50
IEC60747-5-1
IEC60747-5-2
IEC60747-5-3
IEC60825-1
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PDF
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TSAL6100
Abstract: No abstract text available
Text: TSAL6100 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : ∅ 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power • High radiant intensity
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TSAL6100
2002/95/EC
2002/96/EC
TSAL6100
11-Mar-11
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TSAL infrared
Abstract: TSAL5300 TSAL5300-FSZ TSAL5300-GSZ
Text: TSAL5300 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL5300 is a high efficiency infrared emitting diode in GaAs technology, molded in clear, bluegrey tinted plastic packages. 96 11505 Features Applications • Extra high radiant power and radiant
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TSAL5300
TSAL5300
2000/53/EC,
2002/95/EC
2002/96/EC
08-Apr-05
TSAL infrared
TSAL5300-FSZ
TSAL5300-GSZ
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TSAL6200
Abstract: No abstract text available
Text: TSAL6200 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power • High radiant intensity
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TSAL6200
2002/95/EC
2002/96/EC
TSAL6200
11-Mar-11
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PDF
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TSAL7200
Abstract: No abstract text available
Text: TSAL7200 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : ∅ 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power • High radiant intensity
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TSAL7200
2002/95/EC
2002/96/EC
TSAL7200
18-Jul-08
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TSAL6100 application
Abstract: TSAL6100 GaAs 1000 nm Infrared Diode,
Text: TSAL6100 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : ∅ 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power • High radiant intensity
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TSAL6100
2002/95/EC
2002/96/EC
TSAL6100
18-Jul-08
TSAL6100 application
GaAs 1000 nm Infrared Diode,
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Untitled
Abstract: No abstract text available
Text: TLN201 F TOSHIBA Infrared LED GaAℓAs Infrared Emitter TLN201(F) Lead(Pb)-Free Opto−Electronic Switches Tape And Card Readers Equipment Using Infrared Transmission Unit: mm • To−18 metal package. • High radiant power: Po = 5mW(typ.) • High radiant intensity: IE = 35mW / sr(typ.)
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TLN201
To-18
TPS708
15hts
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Untitled
Abstract: No abstract text available
Text: TLN201 F TOSHIBA Infrared LED GaAℓAs Infrared Emitter TLN201(F) Lead Free Product Opto−Electronic Switches Tape And Card Readers Equipment Using Infrared Transmission • Unit: mm To−18 metal package. • High radiant power: Po = 5mW(typ.) • High radiant intensity: IE = 35mW / sr(typ.)
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TLN201
To-18
TPS708
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TLN115A
Abstract: TPS703
Text: TLN115A F TOSHIBA Infrared LED GaAs Infrared Emitter TLN115A(F) Unit: mm Lead Free Product Remote−control Systems • High radiant intensity: IE = 26mW / sr (typ.) • Wide half−angle value: θ1/2 = ±21° (typ.) • Excellent radiant−intensity linearity. Modulation by pulse operation
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TLN115A
TPS703
75ailure
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PDF
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Untitled
Abstract: No abstract text available
Text: TLN115A F TOSHIBA Infrared LED GaAs Infrared Emitter TLN115A(F) Unit: mm Lead Free Product Remote−control Systems • High radiant intensity: IE = 26mW / sr (typ.) • Wide half−angle value: θ1/2 = ±21° (typ.) • Excellent radiant−intensity linearity. Modulation by pulse operation
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TLN115A
TPS703
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PDF
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Untitled
Abstract: No abstract text available
Text: TLN115A F TOSHIBA Infrared LED GaAs Infrared Emitter TLN115A(F) Lead(Pb)-Free Remote−control Systems Unit: mm • High radiant intensity: IE = 26mW / sr (typ.) • Wide half−angle value: θ1/2 = ±21° (typ.) • Excellent radiant−intensity linearity. Modulation by pulse operation
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TLN115A
TPS703
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PDF
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TSAL6400
Abstract: No abstract text available
Text: TSAL6400 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : ∅ 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power • High radiant intensity
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TSAL6400
2002/95/EC
2002/96/EC
TSAL6400
11-Mar-11
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PDF
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TSAL7300
Abstract: No abstract text available
Text: TSAL7300 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : ∅ 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power • High radiant intensity
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Original
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TSAL7300
2002/95/EC
2002/96/EC
TSAL7300
11-Mar-11
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