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    RAM 8403 Search Results

    RAM 8403 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    8403603JA Renesas Electronics Corporation 2kx8 Asynchronous CMOS Static RAM Visit Renesas Electronics Corporation
    8403602JA Renesas Electronics Corporation 2kx8 Asynchronous CMOS Static RAM Visit Renesas Electronics Corporation
    8403606JA Renesas Electronics Corporation 2kx8 Asynchronous CMOS Static RAM Visit Renesas Electronics Corporation
    8403612LA Renesas Electronics Corporation 5.0V 2K x 8 Asynchronous Static RAM Visit Renesas Electronics Corporation
    8403611JA Renesas Electronics Corporation 5.0V 2K x 8 Asynchronous Static RAM Visit Renesas Electronics Corporation

    RAM 8403 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C1995

    Abstract: DP8408A g2ns ab-9 national
    Text: National Semiconductor Application Brief 9 Tim Garverick Rusty Meier January 1986 If one desires the fastest possible operation of the DP8408A 9A multi-mode dynamic RAM controller driver in accessing DRAMs mode 4 externally controlled access mode should be considered


    Original     		PDF DP8408A C1995 g2ns ab-9 national

    8403602ZA

    Abstract: 8403602JA 8403606JA 65162 29104BJA 29110BJA 8403606ZA HM1-65162-9 HM1-65162B-9 HM4-65162-9
    Text: HM-65162 TM 2K x 8 Asynchronous CMOS Static RAM March 1997 Features Description • Fast Access Time . . . . . . . . . . . . . . . . . . . 70/90ns Max The HM-65162 is a CMOS 2048 x 8 Static Random Access Memory manufactured using the Intersil Advanced SAJI V


    Original     		PDF HM-65162 70/90ns HM-65162 8403602ZA 8403602JA 8403606JA 65162 29104BJA 29110BJA 8403606ZA HM1-65162-9 HM1-65162B-9 HM4-65162-9

    8403602JA

    Abstract: 8403606JA 29104BJA 29110BJA 8403606ZA HM1-65162-9 HM1-65162B-9 HM4-65162-9 HM4-65162B-9 HM-65162
    Text: HM-65162 2K x 8 Asynchronous CMOS Static RAM March 1997 Features Description • Fast Access Time. . . . . . . . . . . . . . . . . . . . 70/90ns Max The HM-65162 is a CMOS 2048 x 8 Static Random Access Memory manufactured using the Intersil Advanced SAJI V


    Original     		PDF HM-65162 70/90ns HM-65162 8403602JA 8403606JA 29104BJA 29110BJA 8403606ZA HM1-65162-9 HM1-65162B-9 HM4-65162-9 HM4-65162B-9

    HM-6516-9

    Abstract: 8403601ja F24.6 Package HM1-6516B-9 29102BJA 8403601ZA 8403607JA 8403607ZA HM1-6516-9 HM4-6516-9
    Text: HM-6516 2K x 8 CMOS RAM March 1997 Features Description • Low Power Standby . . . . . . . . . . . . . . . . . . . 275µW Max The HM-6516 is a CMOS 2048 x 8 Static Random Access Memory. Extremely low power operation is achieved by the use of complementary MOS design techniques. This low


    Original     		PDF HM-6516 HM-6516 55mW/MHz HM-6516-9 8403601ja F24.6 Package HM1-6516B-9 29102BJA 8403601ZA 8403607JA 8403607ZA HM1-6516-9 HM4-6516-9

    a5324

    Abstract: 8403601ja 29102BJA 8403601ZA 8403607JA 8403607ZA HM1-6516-9 HM1-6516B-9 HM4-6516-9 HM-6516
    Text: HM-6516 TM 2K x 8 CMOS RAM March 1997 Features Description • Low Power Standby. . . . . . . . . . . . . . . . . . . 275µW Max The HM-6516 is a CMOS 2048 x 8 Static Random Access Memory. Extremely low power operation is achieved by the use of complementary MOS design techniques. This low


    Original     		PDF HM-6516 HM-6516 55mW/MHz a5324 8403601ja 29102BJA 8403601ZA 8403607JA 8403607ZA HM1-6516-9 HM1-6516B-9 HM4-6516-9

    8403602JA

    Abstract: 8403606JA 29104BJA 29110BJA 8403606ZA HM1-65162-9 HM1-65162B-9 HM4-65162-9 HM4-65162B-9 HM-65162
    Text: HM-65162 S E M I C O N D U C T O R 2K x 8 Asynchronous CMOS Static RAM March 1997 Features Description • Fast Access Time. . . . . . . . . . . . . . . . . . . . 70/90ns Max The HM-65162 is a CMOS 2048 x 8 Static Random Access Memory manufactured using the Harris Advanced SAJI V


    Original     		PDF HM-65162 70/90ns HM-65162 8403602JA 8403606JA 29104BJA 29110BJA 8403606ZA HM1-65162-9 HM1-65162B-9 HM4-65162-9 HM4-65162B-9

    HM-6516-9

    Abstract: 8403601ja 29102BJA 8403601ZA 8403607JA 8403607ZA HM1-6516-9 HM1-6516B-9 HM4-6516-9 HM-6516
    Text: HM-6516 S E M I C O N D U C T O R 2K x 8 CMOS RAM March 1997 Features Description • Low Power Standby . . . . . . . . . . . . . . . . . . . 275µW Max The HM-6516 is a CMOS 2048 x 8 Static Random Access Memory. Extremely low power operation is achieved by the


    Original     		PDF HM-6516 HM-6516 55mW/MHz HM-6516-9 8403601ja 29102BJA 8403601ZA 8403607JA 8403607ZA HM1-6516-9 HM1-6516B-9 HM4-6516-9

    SMJ320C31

    Abstract: SMJ320C30 SMJ320C30-40 238 pin PGA socket 41500
    Text: SMJ320C30, SMJ320C31 DIGITAL SIGNAL PROCESSORS SGUS014B – FEBRUARY 1991 – REVISED JUNE 1996 2 D D D D D D D D D D – 55°C to 125°C Operating Temperature Range, QML Processing Processed to MIL-PRF-38535 QML Two 1K-Word x 32-Bit Single-Cycle Dual-Access On-Chip RAM Blocks


    Original     		PDF SMJ320C30, SMJ320C31 SGUS014B MIL-PRF-38535 32-Bit 64-Word 24-Bit SMJ320C31 SMJ320C30 SMJ320C30-40 238 pin PGA socket 41500

    TAG 8442

    Abstract: tag 8634 tag 8418 SPRU031D tag 8610 3055 smd smj320c31hfgm33 SMJ320C30 SMJ320C30-40 SMJ320C31
    Text: SMJ320C30, SMJ320C31 DIGITAL SIGNAL PROCESSORS SGUS014B – FEBRUARY 1991 – REVISED JUNE 1996 2 D D D D D D D D D D – 55°C to 125°C Operating Temperature Range, QML Processing Processed to MIL-PRF-38535 QML Two 1K-Word x 32-Bit Single-Cycle Dual-Access On-Chip RAM Blocks


    Original     		PDF SMJ320C30, SMJ320C31 SGUS014B MIL-PRF-38535 32-Bit 64-Word 24-Bit TAG 8442 tag 8634 tag 8418 SPRU031D tag 8610 3055 smd smj320c31hfgm33 SMJ320C30 SMJ320C30-40 SMJ320C31

    238 pin PGA socket

    Abstract: SMJ320C31-33 5962-9205802 SMJ320C30 SMJ320C30-40 SMJ320C31 D1392 SMJ320C31GFAM33 SMJ320C3x SPRU031D
    Text: SMJ320C30, SMJ320C31 DIGITAL SIGNAL PROCESSORS SGUS014B – FEBRUARY 1991 – REVISED JUNE 1996 2 D D D D D D D D D D – 55°C to 125°C Operating Temperature Range, QML Processing Processed to MIL-PRF-38535 QML Two 1K-Word x 32-Bit Single-Cycle Dual-Access On-Chip RAM Blocks


    Original     		PDF SMJ320C30, SMJ320C31 SGUS014B MIL-PRF-38535 32-Bit 64-Word 24-Bit 238 pin PGA socket SMJ320C31-33 5962-9205802 SMJ320C30 SMJ320C30-40 SMJ320C31 D1392 SMJ320C31GFAM33 SMJ320C3x SPRU031D

    S4-144

    Abstract: IC cs 4852 T6116 6116LA25
    Text: CMOS STATIC RAM 16K 2Kx 8-BIT (*/ integrated Devte Technology Inc IDT 6116SA IDT 6116LA FEATURES: DESCRIPTION: • O p tim ize d for fast RISC proce sso rs in clu d in g the IDT79R3000 • H igh-speed T h e ID T6116SA /LA is a 16,384-blt h ig h -sp ee d static RAM or­


    OCR Scan     		PDF 6116SA 6116LA IDT79R3000 5/19/20/25/30/35/45ns IDT6116SA 100pW IDT6116LA 160mW S4-152 IDT6116SA/IDT6116LA S4-144 IC cs 4852 T6116 6116LA25

    8403602JA

    Abstract: 8403606JA
    Text: HM-65162 Semiconductor 2K x 8 Asynchronous CMOS Static RAM March 1997 Description Features • Fast Access Time. 70/90ns Max • Low Standby Max • Low Operating C u rren t. 70mA Max


    OCR Scan     		PDF HM-65162 HM-65162 8403602JA 8403606JA

    HM1-65162

    Abstract: HM165162883 hm165162 harris HM1-65162B-9 hm4 SMD hm465162c 8403603JA 8403602JA 8403606JA
    Text: æ HM-65162 2K x 8 Asynchronous OMOS StStiC RAM January 1992 Features Description • Fast Access Time. 70/90ns Max The HM-65162 is a CMOS 2048 x 8 Static Random Access Memory manufactured using the Harris Advanced SAJI V


    OCR Scan     		PDF HM-65162 HM-65162 HM1-65162 HM165162883 hm165162 harris HM1-65162B-9 hm4 SMD hm465162c 8403603JA 8403602JA 8403606JA

    Untitled

    Abstract: No abstract text available
    Text: HM-65162 ÌH HARRIS S E M I C O N D U C T O R 2K x 8 Asynchronous CMOS StdtlC RAM January 1992 Features Description • Fast Access Tim Max • Low Standby Current. 50nA Max


    OCR Scan     		PDF HM-65162 70/90ns HM-65162

    8403602JA

    Abstract: 8403606JA chip diagram of ram chip 6116 29104BJA 29110BJA 8403603JA HM-65162 a651
    Text: HM-65162 HARRIS S E M I C O N D U C T O R 2K x 8 Asynchronous CMOS Static RAM M a rc h 1 9 9 7 Features Description • Fast Access Time. 70/90ns Max • Low Standby Max


    OCR Scan     		PDF HM-65162 70/90ns HM-65162 T777777777A 8403602JA 8403606JA chip diagram of ram chip 6116 29104BJA 29110BJA 8403603JA a651

    Untitled

    Abstract: No abstract text available
    Text: CMOS STATIC RAM 16K 2 K X 8 BIT IDT6116SA IDT6116LA Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • Optimized for fast RISC processors including the IDT79R3000 • High-speed — Military: 20/25/35/45/55/70/90/120/150ns (max.) — Commercial: 15/20/25/35/45ns (max.)


    OCR Scan     		PDF IDT6116SA IDT6116LA IDT79R3000 20/25/35/45/55/70/90/120/150ns 15/20/25/35/45ns 180mW MIL-STD-883, 32-pin)

    6516

    Abstract: 6516-9
    Text: HM-6516 Semiconductor 2K March 1997 X 8 CMOS RAM Features Description • Low Power Standby. 275^W Max The HM-6516 is a CMOS 2048 x 8 Static Random Access Memory. Extremely low power operation is achieved by the use of com plem entary MOS design techniques. This low


    OCR Scan     		PDF HM-6516 HM-6516 6516 6516-9

    HM6516

    Abstract: No abstract text available
    Text: HM-6516 fü HARRIS S E M I C O N D U C T O R 2K x 8 CMOS RAM March 1997 Description Features Low Power Standby. 2 7 5 Max Low Power O p e ratio n . 55mW/MHz Max Fast Access Time. . 120/200ns Max


    OCR Scan     		PDF HM-6516 55mW/MHz 120/200ns HM-6516 HM6516

    EH18

    Abstract: HM-6516-9 hm6516-9
    Text: HARRIS H M -6 5 1 6 S E M I C O N D U C T O R 2K March 1997 X 8 CMOS RAM Features Description • Low Power Standby. 275|iW Max The HM-6516 is a CMOS 2048 x 8 Static Random Access Memory. Extremely low power operation is achieved by the


    OCR Scan     		PDF HM-6516 HM-6516 EH18 HM-6516-9 hm6516-9

    Untitled

    Abstract: No abstract text available
    Text: HM-6516 HARRIS S S E M I C O N D U C T O R 2K x 8 CMOS RAM August 1996 Description Features • The HM-6516 is a CMOS 2048 x 8 Static Random Access Memory. Extremely low power operation is achieved by the use of complementary MOS design techniques. This low


    OCR Scan     		PDF HM-6516 HM-6516 M3D2271 bfi275

    L1129

    Abstract: HM1-6516B-9 8403601ja 29102BJA 8403607JA 8403607ZA HM-6516 HM-6516-9 HM1-6516
    Text: HM-6516 HARRIS æ S E M I C O N D U C T O R 2K March 1997 X 8 CMOS RAM Features Description • Low Power S tan db y. 275|aW Max • Low Power O p e ra tio n . 55mW /MHz Max • Fast Access T im e. 120/200ns Max


    OCR Scan     		PDF HM-6516 275nW 55mW/MHz 120/200ns HM-6516 L1129 HM1-6516B-9 8403601ja 29102BJA 8403607JA 8403607ZA HM-6516-9 HM1-6516

    Untitled

    Abstract: No abstract text available
    Text: Ç £\ H A R R HM-6516 I S S E M I C O N D U C T O R 2K J a n u a ry 1992 Features 8 CMOS RAM X Description • Low Power Standby.275|iW Max. • Low Power O peration.55mW/MHz Max. • Fast Access Time. 120/200ns Max.


    OCR Scan     		PDF HM-6516 55mW/MHz 120/200ns

    IC cs 4852

    Abstract: dt6116 S0244
    Text: INTEGRATE] DEVICE 3ÖE D • 4 Ö 2 S 7 7 1 G Q 0 Ö 1 4 1 =î « I D T _ - r - t u - 2 - V - l Z . IDT6116SA IDT6116LA CMOS STATIC RAM 1 6 K 2 K X 8 BIT) NOTICE SEE ORDER OF DATA FOR ERRATA IN FO RM AT IO N FEATURES: DESCRIPTION:


    OCR Scan     		PDF 2S771 IDT6116SA 1DT6116LA IDT79R3000 20/25/35/45/55/70/90/120/150ns 15/20/25/35/45ns 180mW 100nW IDT6116LA IC cs 4852 dt6116 S0244

    DS01003

    Abstract: idt6116s GQ-01 MA5S771 IDT6116L s116l B-116S b116s
    Text: INTEGRATE] DEVICE 3ÖE D • 4 Ö 2 S 7 7 1 G Q 0 Ö 1 4 1 =î « I D T _ - r - t u - 2 - V - l Z . IDT6116SA IDT6116LA CMOS STATIC RAM 1 6 K 2 K X 8 BIT) NOTICE SEE ORDER OF DATA FOR ERRATA IN FO RM AT IO N FEATURES: DESCRIPTION:


    OCR Scan     		PDF 2S771 IDT6116SA IDT6116LA IDT79R3000 20/25/35/45/55/70/90/120/150ns 15/20/25/35/45ns IDT6116LA MIL-STD-883, 32-pin) DS01003 idt6116s GQ-01 MA5S771 IDT6116L s116l B-116S b116s