IMPATT
Abstract: diode gunn SA impatt diode
Text: INTRO DUC TIO N TCS PROFILE L E A D E R S H IP It ha s b e e n 2 0 y e a rs s in c e T H O M S O N C S F S E M IC O N D U C T E U R S S P E C IF IQ U E S TC S m a nufa cture d its firs t G aA s FE T (Field E ffect T ransistor). T h rou ghou t this period, TCS
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Untitled
Abstract: No abstract text available
Text: O r d e rin g n u m b e r : E N 4 4 9 4 FP205 No.4494 PN P/N PN E pitaxial P lan ar Silicon T ransistors SAXYO i Push-Pull Circuit Applications F e a tu re s • Composite type with a PN P ransistor and an NPN tran sisto r in one package, facilitating high-density
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FP205
FP205
2SA1416
2SC3646,
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Untitled
Abstract: No abstract text available
Text: Ordering number: EN 2811 2SC4452 No.2811 SAWO N PN Epitaxial P lan a r Silicon T ransistor High-Speed Switching Applications Features • F ast switching speed • Low collector saturation voltage - High gain-bandwidth product • Small collector capacity
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2SC4452
2SC4452-applied
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2sb1302
Abstract: No abstract text available
Text: Ordering number: E N 2 5 5 5 A 2SB1302 N0.2555A SA\YO PNP E pitaxial P lanar Silicon T ransistor High-Current Switching Applications Applications . DC-DC converters, motor drivers, relay drivers, lamp drivers Features . Adoption of FBET, MBIT processes . Low collector to emitter saturation voltage
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2SB1302
250mm2
D268M0/4097TA
2SB1302
-10FA
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFR 280W NPN S ilicon RF T ransistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • *r = 7.5GHz F= 1.5dEJ at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!
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900MHz
Q62702-F1494
OT-323
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2SD2176
Abstract: No abstract text available
Text: Ordering number: EN 3 1 9 6 _ 2 S D 2 1 7 6 No.3196 N PN E pitaxial P la n ar Silicon T ransistor SAÜVOi Motor Driver Applications Features •D arlington connection ■On-chip zener diode of 60 + 1 0 V betw een collector and base • H igh inductive load handling capability
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250mm2
2SD2176
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BT35f
Abstract: TOP3 package 2sc317 2SC3171 SC-65
Text: Power T ransistors 2SC3171 2SC3171 Silicon PNP Triple-Diffused Planar Type Package Dim ensions High Breakdown Voltage, High Speed Switching Unit I mm 15.5max. • Features 4.7max. 13.5max. • H igh s p e e d sw itch in g I k • H igh c o lle c to r c u r re n t Ic
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2SC3171
bT32fiSE
BT35f
TOP3 package
2sc317
SC-65
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY RANSISTOR SELECTION GUIDES RANSISTOR INTERCHANGEABILITY
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2SA1291
Abstract: 2SC3255
Text: AOK AOK Semiconductor P ro d u c t S pecification S ilicon PNP P ow er T ransistors 2SA1291 DESCRIPTION • With TO-220 package • Low collector saturation voltage. • Short switching time. • Complement to type 2SC3255 APPLICATIONS • Various inductance lamp drivers for
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2SA1291
O-220
2SC3255
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251C
Abstract: 25X2 2SA1388 2SC3540 Car r
Text: AOK AOK Semiconductor P roduct S pecification 2SA1388 S ilico n PNP Pow er T ransistors D ESC R IPTIO N • W ith TD -220F a package • L o w collector saturation voltage • H ig h speed sw itching time • C om plem enta ry to 2SC 3540 APP LIC A TIO N S
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2SA1388
O-22C
2SC3540
251C
25X2
Car r
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2SA1689
Abstract: No abstract text available
Text: Ordering num ber:EN 3 2 3 3 No.3233 _ 2SA1689 PN P E pitaxial P lan ar Silicon T ransistor TV Camera Deflection, High-Voltage Driver Applications F e a tu re s • High breakdown voltage • Small reverse transfer capacitance and excellent high frequency characteristic
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2SA1689
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2SB737
Abstract: 2SD786 251D J802 MAS 560 2Sb737 transistor
Text: 40E D ROHti co Ltd 7 ä2ö * m h "7 > y X £ / T ransistors 0Q054Ö3 3 B R H M 2S B 737 : 737 7 ^ 2 7 -0 ? •fÊ rbb' i £ i l ^ i i Î i Æ / L o w rbb' Low Noise Amp. Epitaxial Planar PNP Silicon ransistor • ÿfJfi"î}‘^ l 3 / ' Dinrïensions • mm
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2SB737
55nV//Hz
2SD786
55nV/VHz
2SD786.
SC-43
251D
J802
MAS 560
2Sb737 transistor
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2SA1825
Abstract: 2SC4729
Text: Ordering number: EN3877 2SÁ1825/2SC4729 PN P/N PN E pitaxial P lanar Silicon T ransistors 50V/8A Switching Applications A p p lic a tio n s •Relay drivers, high-speed inverters, converters, and other general high-current sw itching applications. F e a tu re s
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EN3877
2SA1825/2SC4729
2SA1825
2SC4729
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2222J
Abstract: 2SC2707 2SA1147
Text: AOK AOK Semiconductor P roduct S pecification 2SA1147 S ilicon PNP Pow er T ransistors DESCRIPTION • W ith TO-3 package • High power dissipations • Complement to type 2SC2707 APPLICATIONS • For power switching amplifier and general purpose applications
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2SA1147
2SC2707
C-10A:
-180V:
13MAX
2222J
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2SC4520
Abstract: No abstract text available
Text: Ordering number: EN 3139 2SC4520 No.3139 i SANTO NPN E pitaxial P la n ar Silicon T ransistor i High-Speed Switching Applications F e a tu r e s . Adoption ofFB ET, MBIT processes • Large cu rre n t capacity • Low collector-to-em itter saturation voltage
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2SC4520
250mm2
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2SC4461
Abstract: No abstract text available
Text: Ordering num ber:EN 33332 2SC4461 NPN Triple Diffused P lanar Silicon T ransistor Switching Regulator Applications F e a tu re s • High breakdow n voltage, high reliability • F ast sw itching speed •Wide ASO • Adoption of MBIT process ■Micaless package facilitating m ounting
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2SC4461
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2SA1166
Abstract: 3001 pnp
Text: AOK AOK Semiconductor P roduct S pecification 2SA1166 S ilicon PNP Pow er T ransistors DESCRIPTION • With MT-200 package • High power dissipation APPLICATIONS • Audio and general purpose applications PINNING see Fig.2 PIN DESCRIPTION 1 Base o Collector:connected to
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2SA1166
MT-200
-150V;
3001 pnp
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2SD1225M
Abstract: 2SD1225M Q TRANSISTORS sec 537 2SD1858 2SB909M 2sd1225 T2721 2SB1237 DU 9
Text: 2SD1225M/2SD1858 £ / J ransistors h 7 > v ROHM CO LTD 4 2S D 1225M 2S D 1858 T> m É S a 3 S a • R H v ' J a > h 7 > v X N ^ 4 , ^JiMlîlffl/M edium Power Amp. 7^27-2 ] Epitaxial Planar NPN Silicon ransistors VhMVlV’J i-r • WM■^■^0/Dimensions Unit : mm
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2SD1225M
2SD1858
150mV
500mA)
2SB909M/2SB12371
2SB909M,
2SB1237.
2SD1225M/2SD1858
2SD1225M Q
TRANSISTORS sec 537
2SD1858
2SB909M
2sd1225
T2721
2SB1237
DU 9
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2SD1665
Abstract: 2FK transistor T2721 2SB1130AM 2SD1665AM 2FK 638 transistor
Text: 40E » ROHM CO LTD 7826^ □QQS'IBt. 3 H R H N / T ransistors 2SD1665AM — 2 S D 1 6 6 5 A M — — T -2 7 -Z I Pow er Amp. Epitaxial Planar NPN Silicon ransistor • ^ JfiTf^ H /D innensions Unit : mm • « * . 1 ) i t « E T ' & 3 (B V Ce o = 1 6 0 V ) o
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2SD1665Ã
2SB1130AM
2SB1130AM.
2SD1665AM
-T-27-Zl
ti31i
t-27-21
2SD1665
2FK transistor
T2721
2FK 638 transistor
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JL-01
Abstract: 2SB123 2SB1233 2SB1233A panasonic 2SB
Text: Power T ransistors 2 S 1 B S ilicon 2 3 PN P 3 2 , 2SB12 3 3 , 2S B 1233A S B 1 2 3 3 A E p itaxial P la n a r T yp e P ackage Dim ensions P&wer Am plifier U n it : mn • F eatures *4 3.2m ax. II ■ Absolute M axim um Ratings T c = 2 5 °C Collectorbase voltage
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2SB1233,
2SB1233A
2SB12
2SB1233
2SB1233A
JL-01
2SB123
panasonic 2SB
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2SB1347
Abstract: 2SD2029 SS 109
Text: Power T ransistors 2SB1347 2SB1347 Silicon PNP Triple-Diffused Planar Type Package Dimensions High Power Amplifier Complementary Pair with 2SD2029 U n it : mm 5.3max. 20.5max. • Features 3.0— • Very good linearity of DC current gain hFi • Wide area of safety operation (ASO)
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2SB1347
2SD2029
G01b2Tb
2SB1347
2SD2029
SS 109
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800V PNP
Abstract: 2SC3195 2SC3795A 2SC3795
Text: Power T ransistors 2SC3795, 2SC3795A 2SC3795, 2SC3795A Silicon PNP Triple-Diffused Planar Type Package Dimensions High Breakdown Voltage, High Speed Switching • High speed sw itching • High collector-base voltage V 03.1 ±0.1 • Absolute Maximum Ratings (T c= 2 5°C
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2SC3795,
2SC3795A
2SC3795
01bil72
800V PNP
2SC3195
2SC3795A
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2SC3507
Abstract: No abstract text available
Text: Power T ransistors 2SC3507 hTBEBiE DDlhHab Ü57 2SC3507 Silicon PNP Triple-Diffused Planar Type Package Dimensions High Breakdown Voltage, High Speed Switching U nit : mm • Features . 15.5max. 6.9min. • High speed switching • High collector-base voltage VCbo
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2SC3507
2SC3507
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2SB1418
Abstract: 2SB1418A 2SD2138
Text: Power T ransistors 2SB1-418, 2SB1418Ä 2SB1418, 2SB1418A Package Dimensions Silicon PNP Epitaxial Planar Darlington Type Power Amplifier Complementary Pair with 2SD 2138 • Features • H igh D C c u r re n t g ain I i f e • H igh s p e e d sw itc h in g
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2SB1418,
2SB1418Ã
2SB1418A
2SD2138
2SB1418
2SB1418A
2SD2138
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