gsm signal amplifier circuit diagram
Abstract: GSM module circuit diagram MAX 8778 Power Amplifier Module for GSM RAYTHEON GSM module DCS1800 GSM900 RMPA1955-99 BW-100
Text: Raytheon Commercial Electronics RMPA1955-99 3V Dual-Band GSM Power Amplifier Module Description The RMPA1955-99 is a Dual-band GSM Power Amplifier PA Module which uses Raytheon’s Heterojunction Bipolar Transistor (HBT) PA MMICs and a CMOS control circuit. The fully integrated lead-less chip carrier module
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RMPA1955-99
RMPA1955-99
gsm signal amplifier circuit diagram
GSM module circuit diagram
MAX 8778
Power Amplifier Module for GSM
RAYTHEON
GSM module
DCS1800
GSM900
BW-100
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74LS132N
Abstract: diode c05*10 Robinson Nugent ICA-243-S-TG TDC3310 1n4148 D035 HPS-03-G C052C104K5X5CA Robinson Nugent ICA-243 NSH-12DB-S2-TR
Text: Electronics Semiconductor Division TMC1175AE1C The Evaluation Board for the TMC1175AE1C Description The TMC1175AE1C Evaluation Board brings all of the circuitry together for evaluating Raytheon Electronics’ TMC1175A CMOS A/D converter and the TDC3310 10-bit
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TMC1175AE1C
TMC1175AE1C
TMC1175A
TDC3310
10-bit
DS71175AE1
74LS132N
diode c05*10
Robinson Nugent
ICA-243-S-TG
1n4148 D035
HPS-03-G
C052C104K5X5CA
Robinson Nugent ICA-243
NSH-12DB-S2-TR
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TMC2208
Abstract: LMA1008DMB50 LMA1008JC20 LMA1008JC40 LMA1008PC20 LMA1008PC40
Text: LMA1008 LMA1008 DEVICES INCORPORATED 8 x 8-bit Multiplier-Accumulator 8 x 8-bit Multiplier-Accumulator DEVICES INCORPORATED FEATURES ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ DESCRIPTION 20 ns Multiply-Accumulate Time Low Power CMOS Technology Replaces Raytheon TMC2208
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LMA1008
TMC2208
MIL-STD-883,
48-pin
68-pin
LMA1008
TMC2208
LMA1008PC40
LMA1008DMB50
LMA1008JC20
LMA1008JC40
LMA1008PC20
LMA1008PC40
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smd diode B64
Abstract: digital correlator correlator L10C23CC30 L10C23CC50 L10C23PC20 L10C23PC30 L10C23PC50 L4C381 TMC2023
Text: L10C23 L10C23 DEVICES INCORPORATED 64-bit Digital Correlator 64-bit Digital Correlator DEVICES INCORPORATED FEATURES DESCRIPTION ❑ High Speed 50 MHz , Low Power (125 mW), CMOS 64-bit Digital Correlator ❑ Replaces TRW/Raytheon TDC1023/TMC2023 ❑ Bit Can be Selectively Masked
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L10C23
64-bit
TDC1023/TMC2023
MIL-STD-883,
24-pin
28-pin
smd diode B64
digital correlator
correlator
L10C23CC30
L10C23CC50
L10C23PC20
L10C23PC30
L10C23PC50
L4C381
TMC2023
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cmos ic 4584
Abstract: transistor on 4584 40E-12 CMOS 4584 raytheon Raytheon cmos Raytheon Company 2000 as "300 gate ttl array" raytheon
Text: RAYTHEON/ SEMICONDUCTOR HE D I 75ci73tI0 0Q0t.5bl 3 Raytheon Company Semiconductor Division Raytheon CGA70E18 CGA40E12 CGA1ME12 High Density Low Power ECL Gate Array Family Features • Superior performance, lower power, and higher density than existing ECL arrays
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i73tI0
CGA70E18
CGA40E12
CGA1ME12
70E18)
70E18:
cmos ic 4584
transistor on 4584
40E-12
CMOS 4584
raytheon
Raytheon cmos
Raytheon Company 2000 as
"300 gate ttl array" raytheon
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raytheon emitter pad
Abstract: No abstract text available
Text: RAYTHEON-. SEMICONDUCTOR Lb 7 5 9 7 3 6 0 RAYTHEON» SEMICONDUCTOR Prelim inary Product Specifications Linear integrated C ircuits D e 7 5 ^ 7 3 ^ 0 DOOSODl 66C 0 5 0 0 1 LP165/365 Raytheon LP165/365 Micropower Programmable Quad Comparator Features • Single programming resistor tailors power,
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LP165/365
LP165/365
54BSC
16-Lead
100BSC
raytheon emitter pad
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Untitled
Abstract: No abstract text available
Text: RAYTHEON-. SEMICONDUCTOR 57 DE* □□□MflOb Ö T- 7 3- 1 3- 03 57C 0 4 8 0 6 7 5 9 7 3 6 0 RAYTHEON CO» LINEAR INTEGRATED CIRCUITS PRODUCT SPECIFICATIONS Voltage-to-Frequency Converters Raytheon Features • Single supply operation ■ Pulse output compatible with all logic forms
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7ST73t
RC4151,
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Untitled
Abstract: No abstract text available
Text: RAYTHEON/ SEMICONDUCTOR H E D I ? S cl 7 3 b a Raytheon Company Semiconductor Division GG0 t . 7 t. b D T Preliminary Raytheon RAY1.25VG Ultra Low Power, Very High Speed, High Density HCMOS Gate Array Family Features Il n • Production proven process ■ VHSIC — Phase 1 compatibility including
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RVG10
RVG15
RVG20
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RC3302DB
Abstract: ic lm 339 RC3302 LM339AJ av 339 pin for lm 339 ic lm339n Linear Integrated Circuit LM2901 LM 339 application note LM339AM raytheon
Text: RAYTHEON-, SEMICONDU CTOR S7 57C 0 4 6 9 8 7 5 9 7 3 6 0 RAYTHEON CO» D LINEAR INTEGRATED CIRCUITS PRO D U CT SPECIFIC A TIO N S Raytheon DËj| 7ST7 3bO OOGMbTfl Single-Supply Quad Comparators Features • Input common mode voltage range includes ground ■ Wide single supply voltage range — 2V to 36V
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LM139/139A,
239/239A,
339/339A,
RC3302
1N914
73tiO
0470ci
RC3302DB
ic lm 339
RC3302
LM339AJ
av 339
pin for lm 339 ic
lm339n Linear Integrated Circuit
LM2901
LM 339 application note
LM339AM raytheon
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RL7320
Abstract: RL76 8 bit barrel shifter T-42-11-09 transistor 2N RL7220 8 BIT ALU by 74181
Text: RAYTHEONi 7597360 SEMICONDUCTOR RAYTHEON» AO De 7ST73bO SEMICONDUCTOR DDDS32T 80C 0 5 3 2 9 Product Specifications Configurable Gate Arrays 5 T-42-11-09 RL7000 Series Raytheon RL7000 Series Silicon-Gate HCMOS Logic Arrays Features • Silicon-gate 2.0/u (drawn HCMOS technology
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7ST73bO
DDDS32T
T-42-11-09
RL7000
MUX21LA)
16-Bit
RL7320
RL76
8 bit barrel shifter
transistor 2N
RL7220
8 BIT ALU by 74181
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Untitled
Abstract: No abstract text available
Text: 7S173bO 0008701 S« RAYTHEON/ TMC201imiC2111 SEMICONDUCTOR bME D - TMC2011/TMC2111 CMOS, Variable-Length Shift Register 8-Bit, 40 MHz Description Features The TMC2011 and TMC2111 are high-speed, byte-wide
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7S173bO
TMC201imiC2111
TMC2011/TMC2111
TMC2011
TMC2111
TDC1011
TMC2011)
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3dg201a
Abstract: DG201ACn DG201AC
Text: Preliminary Product Specifications Linear Integrated Circuits DG201A Raytheon DG201A Quad SPST Analog Switch Features Description • ■ ■ ■ ■ ■ ■ ■ The DG201A is a m onolithic CMOS IC contain ing four bidirectional FET switches and the logic
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DG201A
DG201A
3408A
16-Lead
100BSC
54BSC
3dg201a
DG201ACn
DG201AC
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Untitled
Abstract: No abstract text available
Text: Preliminary Product Specifications ATE and Instrumentation Products RC7341 RC7341 High Speed Window Comparator Raytheon January 1994 2.0 ns Propagation Delay Features • Available with common threshold input comparator. ■ 12V max differential input voltage
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RC7341
RC7341
RC7341)
16-pin
28-pin
75T73LD
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Untitled
Abstract: No abstract text available
Text: b4E D • 7SR73bG RAYTHEON/ TMC2330 GGDfibOl 3 0 b « R T N SEMICONDUCTOR - TMC2330 CMOS Coordinate Transformer Description 16-bit user-selectable two's complement or sign-andmagnitude rectangular data formats Input register clock enables and asynchronous output
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7SR73bG
TMC2330
16-bit
120-pin
132-leaded
TMC2330
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Untitled
Abstract: No abstract text available
Text: L10C23 64-bit Digital Correlator FEATURES DESCRIPTION □ High Speed 50 MHz , Low Power (125 mW), CMOS 64-bit Digital Correlator □ Replaces TRW /Raytheon TDC1023/ TMC2023 □ Bit Can be Selectively Masked □ Three-State Outputs □ DESC SMD No. 5962-89711
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L10C23
64-bit
TDC1023/
TMC2023
MIL-STD-883,
24-pin
28-pin
L10C23
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Untitled
Abstract: No abstract text available
Text: L21C11 8-bit Variable Length Shift Register DEVICES INCORPORATED FEATURES DESCRIPTION □ Variable Length 8-bit Wide Shift Register □ Selectable Delay Length from 1 to 16 Stages □ Low Power CMOS Technology □ Replaces TRW /Raytheon TMC2111 □ Load, Shift, and Hold Instructions
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L21C11
TMC2111
MIL-STD-883,
24-pin
28-pin
L21C11
L21C11PC25
L21C11JC25
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Untitled
Abstract: No abstract text available
Text: Raytheon Electronics Semiconductor Division R C 6100 Horizontal Line Genlock Features Applications • High speed tracking sync separator easily follows hum or average picture level APL fluctuations • Glitch remover for operation in high im pulse noise
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RC6100
highfre50
TMC1175
TDC3310
7ST73tiO
RC6100
RC6100M
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Untitled
Abstract: No abstract text available
Text: Preliminary Product Specifications Communications Products RCC701 Raytheon September 29,1993 RCC701 Fibre Channel/ESCON /ATM/SSA™ TRANSCEIVER 200 or 265.625 Megabaud Features • 200 or 265.625 Megabaud data rates ■ Compliant with the Fibre Channel and ESCON
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RCC701
68-pin
64-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: LMAmna *-= •— *— = - L H /IA 1 Q 0 3 8 x 8-bit Multiplier-Accumulator IJbVIOS INuuHHOKA IH □ 20 ns Multiply-Accumulate Time □ Low Power CMOS Technology □ Replaces Raytheon TMC2208 □ Two’s Complement or Unsigned Operands □ Accumulator Performs Preload,
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TMC2208
MIL-STD-883,
48-pin
68-pin
LMA1008
TMC2208
LMA1008PC40
LMA1008PC20
LMA1008JC40
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PDF
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Untitled
Abstract: No abstract text available
Text: • 7S cì73bQ DDD6411 WtRlH 4^3 RAYTHEON/ SEMICONDUCTOR T H > IP 1 1 7 « - A D b4E D TMC1175 CMOS 8-Bit Video A/D Converter Description ♦ ♦ ♦ ♦ ♦ ♦ ♦ The TMC1175 analog-to-dlgital A/D converter employs
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DDD6411
TMC1175
TMC1175
24-Pin
1175N2C20
1175N2C30
1175N2C40
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Untitled
Abstract: No abstract text available
Text: L2 1 C 11 8-bit Variable Length Shift Register DEVICES INCORPORATED FEATURES DESCRIPTION □ Variable Length 8-bit Wide Shift Register □ Selectable Delay Length from 1 to 16 Stages □ □ □ □ □ □ Low Power CMOS Technology Replaces TRW/Raytheon TMC2111
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TMC2111
MIL-STD-883,
24-pin
28-pin
L21C11
L21C11
L21C11PC25
L21C11PC20
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Product Specifications Communications Products_ RCC700 Raytheon September 30,1993 RCC700 FIBRE CHANNEL/ESCON /ATM/SSA™ TRANSCEIVER 200 or 265.625 Megabaud Features • 200 or 265.625 Megabaud data rates ■ Compliant with the Fibre Channel and ESCO N
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RCC700
68-pin
64-pin
RCC700
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Product Specifications ATE and Instrumentation Products RC73687 High Speed Dual Comparator RC73687 Raytheon January 1994 2.2 ns Propagation Delay Features • 10V max differential input voltage forVcc = +10Vl VEE= - 5.2V ■ Low propagation delays: 1.9ns typical
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RC73687
RC73687
16-pin
20-pin
9/91-X-5M
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PDF
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Untitled
Abstract: No abstract text available
Text: Raytheon Electronics Semiconductor Division TMC2302 Im age M anipulation S equencer 40 MHz Features Applications • Asynchronous loading of control parameters • Rapid 25ns per pixel rotation, warping, panning, and scaling of images • Three-dimensional image addressing capability
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TMC2302
24-bit
DS70002302
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