Darlington 40A
Abstract: NTE2542 darlington complementary 120v NTE2541 SILICON COMPLEMENTARY transistors darlington
Text: NTE2541 NPN & NTE2542 (PNP) Silicon Complementary Transistors Darlington, Motor/Relay Driver Absolute Maximum Ratings: Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
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NTE2541
NTE2542
NTE2542,
Darlington 40A
NTE2542
darlington complementary 120v
NTE2541
SILICON COMPLEMENTARY transistors darlington
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NTE2560
Abstract: RBE 215 RELAY SILICON COMPLEMENTARY transistors darlington darlington complementary 120v NTE2559
Text: NTE2559 NPN & NTE2560 (PNP) Silicon Complementary Transistors Darlington, Motor/Relay Driver Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
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NTE2559
NTE2560
NTE2560,
NTE2560
RBE 215 RELAY
SILICON COMPLEMENTARY transistors darlington
darlington complementary 120v
NTE2559
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Untitled
Abstract: No abstract text available
Text: NTE2536 NPN & NTE2537 (PNP) Silicon Complementary Transistors High Current Switch Features: D High Current Capacity D Wide ASO Range D Low Saturation Voltage Applications: D Motor Drivers D Relay Drivers D Converters Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
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NTE2536
NTE2537
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NTE2314
Abstract: No abstract text available
Text: NTE2304 Silicon NPN Transistor High Current, High Speed Switch Compl to NTE2314 Description: The NTE2304 is a silicon NPN transistor in a TO3P type package. Typical applications include relay drivers, high–speed inverters, converters, and other general high–current switching applications.
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NTE2304
NTE2314)
NTE2304
10IB1
10IB2
NTE2314
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Silicon NPN Darlington transistor
Abstract: No abstract text available
Text: NTE214 Silicon NPN Transistor Darlington Driver Description: The NTE214 is a silicon NPN Darlington transistor in a TO3P type package. Typical applications include motor drivers, printer hammer drivers, relay drivers, regulated DC power supply controllers.
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NTE214
NTE214
500IB1
500IB2
Silicon NPN Darlington transistor
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NTE2534
Abstract: NTE2535
Text: NTE2534 NPN & NTE2535 (PNP) Silicon Complementary Transistors High Current Switch Features: D Low Collector Emitter Saturation Voltage Applications: D Relay Drivers D High Speed Inverters D Converters Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
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NTE2534
NTE2535
10IB1
10IB2
NTE2535,
NTE2534
NTE2535
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547 relay ic
Abstract: NTE2314 "PNP Transistor" HIGH SPEED SWITCHING TRANSISTOR PNP 50V 15A
Text: NTE2314 Silicon PNP Transistor High Current, High Speed Switch Compl to NTE2304 Description: The NTE2314 is a silicon PNP transistor in a TO3P type package. Typical applications include relay drivers, high–speed inverters, converters, and other general high–current switching applications.
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NTE2314
NTE2304)
NTE2314
10IB1
10IB2
547 relay ic
"PNP Transistor"
HIGH SPEED SWITCHING TRANSISTOR PNP 50V 15A
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DC 5V to DC 100V CIRCUIT DIAGRAM
Abstract: 110v to 5v dc schematic transistor Ic 4A datasheet NPN 547 relay ic nte215
Text: NTE215 Silicon NPN Transistor Darlington Driver Description: The NTE215 is a silicon NPN Darlington transistor in a TO3P type package. Typical applications include motor drivers, printer hammer drivers, relay drivers, regulated DC power supply controllers.
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NTE215
NTE215
500IB1
500IB2
DC 5V to DC 100V CIRCUIT DIAGRAM
110v to 5v dc schematic
transistor Ic 4A datasheet NPN
547 relay ic
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3 pin phototransistor
Abstract: 4 pin phototransistor phototransistor 3 pin OPTO MOC8204 MOC8204
Text: GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS DESCRIPTION MOC8204 The MOC8204 device consists of a gallium arsenide infrared emitting diode optically coupled to a high voltage, silicon, phototransistor detector in a standard 6-pin DIP package. It is designed for high voltage applications and
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MOC8204
MOC8204
3 pin phototransistor
4 pin phototransistor
phototransistor 3 pin
OPTO MOC8204
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4N33
Abstract: 4N32 4N33 APPLICATION NOTE 4n29 optocoupler 4n33 optocoupler datasheet 4n29 optocoupler Fairchild 4N32 4N29 4N30 4N31
Text: 4N29, 4N30, 4N31, 4N32, 4N33 General Purpose 6-Pin Photodarlington Optocoupler Features Description • High sensitivity to low input drive current The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.
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optocoupler 4n33
Abstract: 4n29 optocoupler 4N33 APPLICATION NOTE 4N29 APPLICATION NOTE datasheet 4n29 optocoupler 4n33 schematic 4N32 4N29 4n33 4n30
Text: 4N29, 4N30, 4N31, 4N32, 4N33 General Purpose 6-Pin Photodarlington Optocoupler Features Description • High sensitivity to low input drive current The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.
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4N33 APPLICATION NOTE
Abstract: No abstract text available
Text: 4N29, 4N30, 4N31, 4N32, 4N33 General Purpose 6-Pin Photodarlington Optocoupler Features Description • High sensitivity to low input drive current The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.
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P01101067
4N29300
4N29300W
4N293S
4N293SD
4N29S
4N29SD
4N29W
\TEMP\4N29300
16-Aug-2007
4N33 APPLICATION NOTE
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4N33 APPLICATION NOTE
Abstract: 4N32SVM
Text: 4N29, 4N30, 4N31, 4N32, 4N33 General Purpose 6-Pin Photodarlington Optocoupler Features Description • High sensitivity to low input drive current The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.
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P01101067
4N30300
4N30300W
4N303S
4N303SD
4N30S
4N30SD
4N30W
\TEMP\4N30300W
16-Aug-2007
4N33 APPLICATION NOTE
4N32SVM
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4N32
Abstract: 4N33 4N32 test circuit 4N33 APPLICATION NOTE
Text: 4N29, 4N30, 4N31, 4N32, 4N33 General Purpose 6-Pin Photodarlington Optocoupler Features Description • High sensitivity to low input drive current The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.
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E90700,
P01101067
4N32300
4N32300W
4N323S
4N323SD
4N32S
4N32SD
4N32W
4N32
4N33
4N32 test circuit
4N33 APPLICATION NOTE
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opto-coupler
Abstract: 4n29
Text: 4N29, 4N30, 4N31, 4N32, 4N33 General Purpose 6-Pin Photodarlington Optocoupler Features Description • High sensitivity to low input drive current The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.
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E90700,
P01101067
4N31300
4N31300W
4N313S
4N313SD
4N31S
4N31SD
4N31W
opto-coupler
4n29
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RBE 215 RELAY
Abstract: bu323z
Text: ON Semiconductort BU323Z NPN Silicon Power Darlington High Voltage Autoprotected AUTOPROTECTED DARLINGTON 10 AMPERES 360 −450 VOLTS CLAMP 150 WATTS The BU323Z is a planar, monolithic, high−voltage power Darlington with a built−in active zener clamping circuit. This device is
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BU323Z
RBE 215 RELAY
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Fairchild 4N32
Abstract: 4n29 optocoupler 4n33s fairchild
Text: 4N29, 4N30, 4N31, 4N32, 4N33 General Purpose 6-Pin Photodarlington Optocoupler Features Description • High sensitivity to low input drive current The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.
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E90700,
P01101067
4N33300
4N33300W
4N333S
4N333SD
4N33M
4N33S
4N33SD
4N33W
Fairchild 4N32
4n29 optocoupler
4n33s fairchild
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MOC8100 applications
Abstract: TIL117-M CNY171 CNY172 CNY173 CNY174 CNY17F1 CNY17F2 CNY17F3 CNY17F4
Text: CNY171, CNY172, CNY173, CNY174, CNY17F1, CNY17F2, CNY17F3, CNY17F4, MOC8101, MOC8102, MOC8103, MOC8104, MOC8105, MOC8106, MOC8107, MOC8108 Phototransistor Optocouplers Features Applications • CNY171/2/3/4 and CNY17F1/2/3/4 are also available in white package by specifying M suffix eg. CNY17F2M
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CNY171,
CNY172,
CNY173,
CNY174,
CNY17F1,
CNY17F2,
CNY17F3,
CNY17F4,
MOC8101,
MOC8102,
MOC8100 applications
TIL117-M
CNY171
CNY172
CNY173
CNY174
CNY17F1
CNY17F2
CNY17F3
CNY17F4
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ZXTP25100DFH
Abstract: No abstract text available
Text: ZXTN25100DFH 100V, SOT23, NPN medium power transistor Summary BVCEX > 180V BVCEO > 100V BVECO > 6V IC cont = 2.5A VCE(sat) < 95mV @ 1A RCE(sat) = 86m⍀ PD = 1.25W Complementary part number ZXTP25100DFH Description C Advanced process capability and package design have been used to
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ZXTN25100DFH
ZXTP25100DFH
ZXTP25100DFH
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ZXTN25100DFH
Abstract: ZXTN25100DFHTA ZXTP25100DFH
Text: ZXTN25100DFH 100V, SOT23, NPN medium power transistor Summary BVCEX > 180V BVCEO > 100V BVECO > 6V IC cont = 2.5A VCE(sat) < 95mV @ 1A RCE(sat) = 86m⍀ PD = 1.25W Complementary part number ZXTP25100DFH Description C Advanced process capability and package design have been used to
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ZXTN25100DFH
ZXTP25100DFH
ZXTN25100DFH
ZXTN25100DFHTA
ZXTP25100DFH
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C1685
Abstract: C1685 transistor transistor c1684 smd TRANSISTOR 27e an c1685 transistor SMD Transistor 1c C1636 C1685 R transistor C1681 C1296A
Text: ÖUALITY TECHNOLOGIES CORP B7E D QUALITY TECHNOLOGIES • 74bbflSl 0GQ3577 DUAL PHOTOTRANSISTOR OPTOCOUPLERS MCT6 MCT62 MCT61 MCT66 T -4 1 -8 3 DESCRIPTION PACKAGE DIMENSIONS The MCT6X optoisoiators have two channels for high density applications. For four channel applications,
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74bbflSl
0GQ3577
MCT62
MCT61
MCT66
16-pin
C2091
MCT9001
C1685
C1685 transistor
transistor c1684
smd TRANSISTOR 27e
an c1685 transistor
SMD Transistor 1c
C1636
C1685 R transistor
C1681
C1296A
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Untitled
Abstract: No abstract text available
Text: dJUALITY TECHNOLOGIES CORP QUALITY TECHNOLOGIES 27E D • 74tibfiSl Q003541 T PHOTOTRANSISTOR OPTOCOUPLER T -4 1 -8 3 MCT274 PACKAGE DIMENSIONS [f t DESCRIPTION The MCT274 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is
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74tibfiSl
Q003541
MCT274
MCT274
C2090
C2079
MCT9001
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S7E SMD TRANSISTOR
Abstract: No abstract text available
Text: DUALITY -TECHNOLOGIES CORP 27E D Bl QUALITY TECHNOLOGIES • 74bfciä51 Q0G3S4S 7 PHOTOTRANSISTOR OPTOCOUPLER T—41—83 MCT275 DESCRIPTION PACKAGE DIMENSIONS The MCT275 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is
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74bfciÃ
MCT275
MCT275
MCT9001
S7E SMD TRANSISTOR
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D1815
Abstract: 2539B GENERAL SEMICONDUCTOR ed 7ca 2SB1215 2SD1815 2044B EN2539
Text: Ordering num ber: EN2539B 2SB1215/2SD1815 N0.2539B smvo PNP/NPN Epitaxial Planar Silicon Transistors High-Current Sw itching Applications i A pplications • Relay drivers, high-speed inverters, converters, and other general high-current switching applications.
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EN2539B
2539B
2SB1215/2SD1815
2SB1215/2SD1815-applied
2SB1215
cn07b
D1815
2539B
GENERAL SEMICONDUCTOR ed 7ca
2SB1215
2SD1815
2044B
EN2539
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