TRANSISTOR SD 2689
Abstract: inverter ic 3524 application mg76 HL 100 Transistor oki cross ambit inverter circuit WinNT40
Text: DATA SHEET O K I A S I C P R O D U C T S MG74K/75K/76K 0.15µm Customer Structured Arrays March 2003 • ■ –––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––
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MG74K/75K/76K
MG74K/75K/76K
TRANSISTOR SD 2689
inverter ic 3524 application
mg76
HL 100 Transistor
oki cross
ambit inverter circuit
WinNT40
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oki cross
Abstract: BGA 27X27 pitch
Text: DATA SHEET O K I A S I C P R O D U C T S MG87P3/87P4/87P5 0.25µm Standard Cell August 2002 • ■ –––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––
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MG87P3/87P4/87P5
oki cross
BGA 27X27 pitch
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oki cross
Abstract: ARM920T MG73M MG74M MG75M
Text: DATA SHEET O K I A S I C P R O D U C T S MG73M/74M/75M 0.16µm Customer Structured Arrays August 2002 • ■ –––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––
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MG73M/74M/75M
MG73M/74M/75M
oki cross
ARM920T
MG73M
MG74M
MG75M
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oki cross
Abstract: MG63P MG64P MG65P b0268
Text: DATA SHEET O K I A S I C P R O D U C T S MG63P/64P/65P 0.25µm Embedded DRAM/ Customer Structured Arrays November 1998 MG63P/64P/65P 0.25µm Embedded DRAM/Customer Structured Arrays DESCRIPTION Oki’s 0.25 µm MG63P/64P/65P Application-Specific Integrated Circuit ASIC provides the ability to
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MG63P/64P/65P
MG63P/64P/65P
1-800-OKI-6994
oki cross
MG63P
MG64P
MG65P
b0268
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oki cross
Abstract: MG113P MG115P MG73P MG74P MG75P
Text: DATA SHEET O K I A S I C P R O D U C T S Preliminary MG113P/114P/115P/73P/74P/75P 0.25µm Sea of Gates and Customer Structured Arrays March 1998 MG113P/114P/115P/73P/74P/75P Preliminary 0.25µm Sea of Gates and Customer Structured Arrays DESCRIPTION Oki’s 0.25µm Application-Specific Integrated Circuit ASIC products are available in both Sea Of Gates
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MG113P/114P/115P/73P/74P/75P
MG115P
MG75P
MG113P/114P
MG115P
1-800-OKI-6994
oki cross
MG113P
MG73P
MG74P
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539 b14
Abstract: oki cross MG73Q MG74Q MSM98Q MSM99Q M98Q memory compiler
Text: DATA SHEET O K I A S I C P R O D U C T S MG73/74Q and MSM98Q/99Q 0.35µm Customer Structured Arrays August 2002 • ■ –––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––
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MG73/74Q
MSM98Q/99Q
MG73Q/74Q
MSM98Q/99Q
539 b14
oki cross
MG73Q
MG74Q
MSM98Q
MSM99Q
M98Q
memory compiler
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547 B38
Abstract: oki cross MG73Q MG74Q MSM98Q MSM99Q
Text: DATA SHEET O K I A S I C P R O D U C T S MG73Q000/74Q000 and MSM98Q000/99Q000 0.35µm Customer Structured Arrays April 1999 • ■ –––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––
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MG73Q000/74Q000
MSM98Q000/99Q000
MG73Q/74Q
MSM98Q/99Q
1-800-OKI-6388
547 B38
oki cross
MG73Q
MG74Q
MSM98Q
MSM99Q
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822 gfp
Abstract: MG73Q oki cross MG74Q MSM98Q MSM99Q lvds vhdl B15240
Text: DATA SHEET O K I A S I C P R O D U C T S MG73Q000/74Q000 and MSM98Q000/99Q000 0.35µm Customer Structured Arrays November 1999 • ■ –––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––
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MG73Q000/74Q000
MSM98Q000/99Q000
MG73Q/74Q
MSM98Q/99Q
1-800-OKI-6388
822 gfp
MG73Q
oki cross
MG74Q
MSM98Q
MSM99Q
lvds vhdl
B15240
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DD 127 D TRANSISTOR
Abstract: oki cross oki pitch MG113P MG115P MG73P MG74P MG75P BGA and QFP Package ibm IKOS Systems
Text: DATA SHEET O K I A S I C P R O D U C T S MG113P/114P/115P/73P/74P/75P 0.25µm Sea of Gates and Customer Structured Arrays November 1999 • ■ –––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––
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MG113P/114P/115P/73P/74P/75P
MG115P
MG75P
MG113P/114P
1-800-OKI-6388
DD 127 D TRANSISTOR
oki cross
oki pitch
MG113P
MG73P
MG74P
BGA and QFP Package ibm
IKOS Systems
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2SD536
Abstract: N 555 2SB681 LEM 543 2sb601 2SB552 2SB598 Lem LT 80 p cl 100 hie
Text: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
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2SB600
2SB601
tc-25
2SD536
N 555
2SB681
LEM 543
2SB552
2SB598
Lem LT 80 p
cl 100 hie
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Untitled
Abstract: No abstract text available
Text: MOSEL MSS0151/ 0281 Speech Synthesizer Voice ROM FEATURES DESCRIPTION • Single power can operate at 2 .4 V through 5V . Th e M S S 0281 is a single-chip speech synthesizing C M O S V LS I that can synthesize voice and other sounds up to 2.8 seconds. Th e chip contains most of the necessary circuitry
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PID027
MSS0151/
tri99er
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STK9N10
Abstract: GC233
Text: r z 7 S C S -T H O M S O N Ä 7# S T K 9 N 10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STK9N10 . . • . . . V dss RoS on Id 100 V 0 .3 Í1 9 A AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C LOW GATE CHARGE
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STK9N10
OT-82
OT-194
GC2334Û
GC20270
STK9N10
GC233
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 76 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 76 Vf S 400 V k> 3A ^4)S on) 1.8 Si Package Ordering Code TO-220 AB C67078-S1315-A2 Maximum Ratings Parameter Symbol Continuous drain current b Tc = 37 °C
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O-220
C67078-S1315-A2
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2SD480
Abstract: 2SD297 2SD388 25D40 k 553 y 1a 2sd438 transistor 2sd400 transistor data 2SD392 2SD415 2SD400
Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
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2SD297
2SD476
3D478
2SD479
2SD480
2SD480
2SD297
2SD388
25D40
k 553 y 1a
2sd438 transistor
2sd400 transistor data
2SD392
2SD415
2SD400
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Untitled
Abstract: No abstract text available
Text: 023SbD5 SIEMENS 00^2034 □ 71 • PROFET BTS4 1 0 G2 Smart Highside Power Switch Features Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation • • • • • • • • Overload protection
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023SbD5
BTS410G2
T0-22QAB/5
O-22QAB/5.
E3062
Q67060-S6104-A2
BTS410G2
E3062A
O-220AB/5,
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Untitled
Abstract: No abstract text available
Text: SIEMENS PRÜFET BTS410G2 Smart Highside Power Switch Features Product Summary • Overload protection • Current limitation • Short circuit protection • Thermal shutdown • Overvoltage protection Including load dump • Fast demagnetization of inductive loads
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BTS410G2
O-220AB/5
Q67060-S6104-A2
O-220AB/5,
E3062
BTS410G2
E3062A
Q67060-S6104-A4
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T092A
Abstract: transistors BC 459
Text: SIGNAL TYPES ptot * T Y P E NPN BC 170 BC 171 BC 172 BC 173 BC 174 BC 237 BC 238 PNP (W) 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 B C £39 BC BC BC BC BC BC BC 413 414 546 547 548 549 550 BC BC BC BC BC
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T0-92a
O-92a
O-126
T092A
transistors BC 459
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c 4977 transistor
Abstract: PHOTO RESISTOR
Text: MOSEL-VITELIC 4fiE D ^3533^1 00G1001 b • MOVI T - 7 7 -/3 MOSEL M S S 0 1 5 1 / 0 2 8 1 Speech Synthesizer Voice ROM FEATURES DESCRIPTION • Single pow er can op erate at 2 .4 V through 5V . T h e M S S 0281 is a single-chip speech synthesizing C M O S
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00G1001
PID027
MSS0151/
c 4977 transistor
PHOTO RESISTOR
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67pA
Abstract: 6030B Thermalloy OPA548 spice model
Text: BURR - BROW N [ OPA548 1 www.burr-brown.com/databook/OPA548.html High-Voltage, High-Current OPERATIONAL AMPLIFIER DESCRIPTION FEATURES • WIDE SUPPLY RANGE Single Supply: +8V to +60V Dual Supply: ±4V to ±30V • HIGH OUTPUT CURRENT: 3A Continuous 5A Peak
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OPA548
com/databook/OPA548
T0-220
OPA548
67pA
6030B
Thermalloy
OPA548 spice model
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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2SK1852
Abstract: 015fi MADT mpnp
Text: -y 5 7 . C / |~ ~ NEC ^ ï / \ t mos mos M O S Field Effect Power Transistor 7 î fet 2SK1852 N MOS F E T n m m 2SK1852 a , T, FET 5V N > mn& ic CD&tilz x h M y '?T7 — M O S • m m £ X >f .y f - > 7T'<4 X T " f o f é * V ÎS ÎÆ T ', X >f -y f - > i) i i l t ^ £ £ ¿ 0 ,
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2SK1852
IEI-620)
2SK1852
015fi
MADT
mpnp
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transistor A6U
Abstract: No abstract text available
Text: /w 7 S G S -T H O M S O N TDA7370B QUAD POWER AMPLIFIER FOR CAR RADIO • ■ ■ ■ ■ ■ ■ ■ ■ ■ MINIMUM EXTERNAL COMPONENT COUNT HIGH CURRENT CAPABILITY NO BOOTSTRAP CAPACITORS NO BOUCHEROT CELLS CLIP DETECTOR OUTPUT HIGH OUTPUT POWER HIGH APPLICATION FLEXIBILITY
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TDA7370B
MULTIWATT15V
TDA7370B
QGbl47bti
TDA7302
G0b47b7
transistor A6U
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voice enabled speed control of DC motor
Abstract: rc servo motor back EMF WT6Q 32H4631
Text: SimnMkms SSI 32H4631 Hybrid Servo & Spindle Motor Controller Advance Information July, 1990 FEATURES • • Head Positioning - Embedded servo control with digital timing generator and ABCD burst sampling - Hybrid servo features with N/Q interface and track counter
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32H4631
voice enabled speed control of DC motor
rc servo motor back EMF
WT6Q
32H4631
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Untitled
Abstract: No abstract text available
Text: B U R R - B R O W N <i [ 3656 ] Transformer Coupled ISOLATION AMPLIFIER FEATURES APPLICATIONS • INTERNAL ISOLATED POWER • MEDICAL Patient Monitoring and Diagnostic Instrumentation • 8000V ISOLATION TEST VOLTAGE • 0.5|iA MAX LEAKAGE AT 120V, 60Hz • INDUSTRIAL
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125dB
00V/1
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