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    Untitled

    Abstract: No abstract text available
    Text: VNH3ASP30-E Automotive fully integrated H-bridge motor driver Features Type RDS on Iout Vccmax VNH3ASP30-E 42mΩ max (per leg) 30A 41V MultiPowerSO-30 • 5V logic level compatible inputs ■ Undervoltage and overvoltage shutdown ■ Overvoltage clamp


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    PDF VNH3ASP30-E MultiPowerSO-30â

    Untitled

    Abstract: No abstract text available
    Text: VNH3ASP30-E Automotive fully integrated H-bridge motor driver Features Type RDS on Iout Vccmax VNH3ASP30-E 42mΩ max (per leg) 30A 41V MultiPowerSO-30 • 5V logic level compatible inputs ■ Undervoltage and overvoltage shutdown ■ Overvoltage clamp


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    PDF VNH3ASP30-E MultiPowerSO-30â

    VNH3ASP30-E

    Abstract: pwm 555 driver application multipower JESD97 VNH3ASP30TR-E 555 pwm motor DC
    Text: VNH3ASP30-E Automotive fully integrated H-bridge motor driver Features Type RDS on Iout Vccmax VNH3ASP30-E 42mΩ max (per leg) 30A 41V MultiPowerSO-30 • 5V logic level compatible inputs ■ Undervoltage and overvoltage shutdown ■ Overvoltage clamp


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    PDF VNH3ASP30-E MultiPowerSO-30TM VNH3ASP30-E pwm 555 driver application multipower JESD97 VNH3ASP30TR-E 555 pwm motor DC

    multipower

    Abstract: JESD97 VNH3ASP30-E VNH3ASP30TR-E
    Text: VNH3ASP30-E Automotive fully integrated H-bridge motor driver Features Type RDS on Iout Vccmax VNH3ASP30-E 42mΩ max (per leg) 30A 41V MultiPowerSO-30 • 5V logic level compatible inputs ■ Undervoltage and overvoltage shutdown ■ Overvoltage clamp


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    PDF VNH3ASP30-E MultiPowerSO-30TM multipower JESD97 VNH3ASP30-E VNH3ASP30TR-E

    ASJD1200R045

    Abstract: SiC JFET JFET semisouth silicon carbide JFET SJDP120R045 silicon carbide j-fet SEMISOUTH semisouth JFET VGS15V TO258
    Text: ADVANCE INFORMATION SiC JFET ASJD1200R045 Normally-ON Trench Silicon Carbide Power JFET BVDS FEATURES: ProductSummary 1200 RDS ON max 0.045 V : ETS,typ TBD J Die Inside • Hermetic TO-258 Packaging • 200°C Maximum Operating Temperature (260oC Contact Factory)


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    PDF ASJD1200R045 O-258 260oC MIL-PRF-19500 MIL-STD-750 O-258 SJDP120R045 O-247 ASJD1200R045 SiC JFET JFET semisouth silicon carbide JFET silicon carbide j-fet SEMISOUTH semisouth JFET VGS15V TO258

    SiC JFET

    Abstract: JFET semisouth SJDP120R045 5A JFET ASJD1200R045 SEMISOUTH SJDP
    Text: ADVANCED INFORMATION SiC JFET ASJD1200R045 Normally-ON Trench Silicon Carbide Power JFET BVDS FEATURES: ProductSummary 1200 RDS ON max 0.045 V : ETS,typ TBD J Die Inside • Hermetic TO-257 Packaging • 200°C Maximum Operating Temperature (260oC Contact Factory)


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    PDF ASJD1200R045 O-257 260oC MIL-PRF-19500 MIL-STD-750 O-257 SJDP120R045 O-247 ASJD1200R045 SiC JFET JFET semisouth 5A JFET SEMISOUTH SJDP

    SEMISOUTH

    Abstract: JFET semisouth SiC JFET semisouth JFET SJDP120R085
    Text: ADVANCED INFORMATION SiC JFET ASJD1200R085 Normally-ON Trench Silicon Carbide Power JFET BVDS FEATURES: ProductSummary 1200 RDS ON max 0.085 V : ETS,typ TBD J Die Inside • Hermetic TO-257 Packaging • 200°C Maximum Operating Temperature (260oC Contact Factory)


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    PDF ASJD1200R085 O-257 260oC MIL-PRF-19500 MIL-STD-750 O-257 SJDP120R085 O-247 ASJD1200R085 SEMISOUTH JFET semisouth SiC JFET semisouth JFET

    ASJD1200R085

    Abstract: SiC JFET SJDP120R085 JFET semisouth SEMISOUTH silicon carbide j-fet SJDP silicon carbide JFET JFET semisouth Semisouth, SJDP120R085
    Text: ADVANCE INFORMATION SiC JFET ASJD1200R085 Normally-ON Trench Silicon Carbide Power JFET BVDS FEATURES: ProductSummary 1200 RDS ON max 0.085 V : ETS,typ TBD J Die Inside • Hermetic TO-258 Packaging • 200°C Maximum Operating Temperature (260oC Contact Factory)


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    PDF ASJD1200R085 O-258 260oC MIL-PRF-19500 MIL-STD-750 O-258 SJDP120R085 O-247 ASJD1200R085 SiC JFET JFET semisouth SEMISOUTH silicon carbide j-fet SJDP silicon carbide JFET JFET semisouth Semisouth, SJDP120R085

    ASJE1200R100

    Abstract: SiC JFET JFET semisouth semisouth sjEp120R100 SEMISOUTH SJEP120R100 SJEP120 silicon carbide JFET
    Text: ADVANCE INFORMATION SiC JFET ASJE1200R100 Normally-OFF Trench Silicon Carbide Power JFET BVDS FEATURES: RDS ON max 0.100 V : ETS,typ 170 J Die Inside • Hermetic TO-258 Packaging • 200°C Maximum Operating Temperature (for 260oC Contact Factory) • Available Screening:


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    PDF O-258 260oC MIL-PRF-19500 MIL-STD-750 ASJE1200R100 SJEP120R100 O-247 ASJE1200R100 O-257 SiC JFET JFET semisouth semisouth sjEp120R100 SEMISOUTH SJEP120 silicon carbide JFET

    ASJE1700R550

    Abstract: SiC JFET JFET semisouth 3E05 SEMISOUTH silicon carbide j-fet silicon carbide JFET SJEP170 SJEP170R550 SJEP
    Text: ADVANCE INFORMATION SiC JFET ASJE1700R550 Normally-OFF Trench Silicon Carbide Power JFET BVDS FEATURES: RDS ON max 0.550 V : ETS,typ 74 J Die Inside • Hermetic TO-258 Packaging • 200°C Maximum Operating Temperature (for 260oC Contact Factory) • Available Screening:


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    PDF ASJE1700R550 O-258 260oC MIL-PRF-19500 MIL-STD-750 SJEP170R550 O-247 ASJE1700R550 O-257 SiC JFET JFET semisouth 3E05 SEMISOUTH silicon carbide j-fet silicon carbide JFET SJEP170 SJEP

    SJEP170R550

    Abstract: semisouth JFET 3E05 SEMISOUTH JFET semisouth ASJE1700R550
    Text: ADVANCED INFORMATION SiC JFET ASJE1700R550 Normally-OFF Trench Silicon Carbide Power JFET BVDS FEATURES: RDS ON max 0.550 V : ETS,typ 74 J Die Inside • Hermetic TO-257 Packaging • 200°C Maximum Operating Temperature (for 260oC Contact Factory) • Available Screening:


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    PDF ASJE1700R550 O-257 260oC MIL-PRF-19500 MIL-STD-750 SJEP170R550 O-247 ASJE1700R550 semisouth JFET 3E05 SEMISOUTH JFET semisouth

    JFET semisouth

    Abstract: SEMISOUTH SiC JFET
    Text: ADVANCED INFORMATION SiC JFET ASJE1200R100 Normally-OFF Trench Silicon Carbide Power JFET BVDS FEATURES: RDS ON max 0.100 V : ETS,typ 170 J Die Inside • Hermetic TO-257 Packaging • 200°C Maximum Operating Temperature (for 260oC Contact Factory) • Available Screening:


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    PDF O-257 260oC MIL-PRF-19500 MIL-STD-750 ASJE1200R100 SJEP120R100 O-247 ASJE1200R100 JFET semisouth SEMISOUTH SiC JFET

    Ultra-fast Recovery Diodes Meet Today Requirements for High Frequency Operations and Power Ratings

    Abstract: all mosfet power amplifier AUDIO MOSFET POWER AMPLIFIER CIRCUIT MOSFET IGBT THEORY AND APPLICATIONS Complementary Audio mosfets Power Amplifier MOSFET QG international rectifier application note 100w mosfet audio power amplifier mosfet power amplifier class D class a mosfet power amplifier
    Text: Application Note AN-1070 Class D Audio Amplifier Performance Relationship to MOSFET Parameters By Jorge Cerezo, International Rectifier Table of Contents Page Abstract .…………2


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    PDF AN-1070 Ultra-fast Recovery Diodes Meet Today Requirements for High Frequency Operations and Power Ratings all mosfet power amplifier AUDIO MOSFET POWER AMPLIFIER CIRCUIT MOSFET IGBT THEORY AND APPLICATIONS Complementary Audio mosfets Power Amplifier MOSFET QG international rectifier application note 100w mosfet audio power amplifier mosfet power amplifier class D class a mosfet power amplifier

    Untitled

    Abstract: No abstract text available
    Text: MP6920 Fast Turn-Off Intelligent Rectifier The Future of Analog IC Technology FEATURES DESCRIPTION • The MP6920 is a fast turn-off intelligent rectifier for Flyback converters that combines a 60V power switch that replaces diode rectifiers for high efficiency. The chip regulates the forward


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    PDF MP6920 MP6920 300kHz MS-012,

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


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    PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    op amp cookbook

    Abstract: N-Channel JFET Vgsoff N-Channel jfet 100V depletion analog optocoupler hcnr201 Texas Instruments LED Cookbook n-Channel Depletion Mosfets IRFU9120 equivalent dual P-Channel JFET IRFU9120 OPA364
    Text: Op Amp Stone Soup A “Cookbook” Collection of Single Supply Op Amp Circuits Tim Green Linear Applications Manager Tucson Division [email protected] The Story of Stone Soup Some travelers come to a village, carrying nothing more than an empty pot. Upon their arrival, the villagers are unwilling to share any of their


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    PDF my/fkee/BEE2213 20AND 20BEP 20notes/ 20FET HCNR200/HCNR201 op amp cookbook N-Channel JFET Vgsoff N-Channel jfet 100V depletion analog optocoupler hcnr201 Texas Instruments LED Cookbook n-Channel Depletion Mosfets IRFU9120 equivalent dual P-Channel JFET IRFU9120 OPA364

    MBR3904

    Abstract: ATX12v schematic MTD3055 4SEPC560MX TSS
    Text: NX2710 SINGLE CHANNEL PWM CONTROLLER WITH NMOS LDO CONTROLLER AND 5V BIAS REGULATOR ADVANCE DATA SHEET Pb Free Product DESCRIPTION The NX2710 controller IC is a compact synchronous Buck controller IC with 16 lead SOIC package designed for step down DC to DC converter applications with


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    PDF NX2710 NX2710 SOIC16 MBR3904 ATX12v schematic MTD3055 4SEPC560MX TSS

    TLV2426

    Abstract: op amp cookbook MMBT2222 OPA364 "Texas instruments" transistor 2N3329 2N3955 2N6804 Stone Soup IRFU9120
    Text: Op Amp Stone Soup A “Cookbook” Collection of Single Supply Op Amp Circuits Tim Green Linear Applications Manager Tucson Division [email protected] Op Amp Stone Soup: This presentation will offer a "Stone Soup" collection of useful op amp circuits to solve linear application problems on a daily basis. Each op amp circuit pre-built in


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    PDF my/fkee/BEE2213 20AND 20BEP 20notes/ 20FET HCNR200/HCNR201 TLV2426 op amp cookbook MMBT2222 OPA364 "Texas instruments" transistor 2N3329 2N3955 2N6804 Stone Soup IRFU9120

    IT8500E-L

    Abstract: it8500e UP7711U8 JRST2001 EMB20N03V UP7714BMA5-00 IT8500 JMC251 parade ps8101 PCH Ibex Peak-M
    Text: 5 4 3 2 1 K42F SCHEMATIC For BOM Rev1.0 Power VCORE Page 80 System D Page 81 BLOCK DIAGRAM D 1.5VS & 1.05VS Page 82 DDR & VTT Page 83 HDMI HDMI AMD PARK-XT-S3 DDR3 800/1066MHz CPU PCIE x16 ARRANDALE +2.5VS DDR3 SO-DIMM Page 84 Page 16~18 CRT CRT LVDS Page 70


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    PDF 800/1066MHz IT8500E-L 110ms 100us IT8500E-L it8500e UP7711U8 JRST2001 EMB20N03V UP7714BMA5-00 IT8500 JMC251 parade ps8101 PCH Ibex Peak-M

    IT8500E-L

    Abstract: it8500e L7206 1.2 it8500 k52jr UP7711U8 ICS9LPR427 ALC269 PT8528 UP7714BMA5-00
    Text: 5 4 SYSTEM PAGE REF. Content PAGE D C B A 1 2 3 4 5 6 7 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 36 37 38 40 41 42 43 44 45 46 47 48 50 51 52 53 56 57 60 61 Block Diagram System Setting CPU 1 _DMI,PEG,FDI,CLK,MISC CPU(2)_DDR3 CPU(3)_CFG,RSVD,GND


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    PDF ICS9LPR362 IT8512 CODEC-ALC663 FM2010 R5C833 110ms 100us M60JV IT8500E-L it8500e L7206 1.2 it8500 k52jr UP7711U8 ICS9LPR427 ALC269 PT8528 UP7714BMA5-00

    SC3102HULTRT

    Abstract: SC3102
    Text: SC3102 2A Synchronous Step-Down Regulator POWER MANAGEMENT Features „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ Description VIN Range: 2.9 – 5.5V Preset VOUT Range: 1.0V to 3.3V Up to 2A Output Current Ultra-Small Footprint, <1mm Height 1.5MHz Switching Frequency


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    PDF SC3102 SC3102 SC3102HULTRT

    UP7711U8

    Abstract: RTM880T-792-LF max17480G rtl8112 UP7711 UP7714BMA5-00 RS780MN rtm880t G780P11U IT8752E
    Text: 5 4 3 2 1 K40AA SCHEMATIC R1.2 D D Content PAGE PAGE Content SYSTEM PAGE REF. C B A 3 4 5 6 7 8 9 10 11 12 13 14 15 20 21 22 23 24 25 29 30 31 32 33 34 35 36 37 38 40 41 42 43 44 45 46 48 50 51 52 53 56 57 58 60 61 62 63 65 66 69 70 71 72 73 74 75 76 77 SCHEMATIC INFORMATION


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    PDF K40AA CLK-ICS9LPR363DGLF-T EC-IT8512 RTL8111C CODEC-ALC663 AMP-1431 UP7704U8 220mA/350mA 1UF/25V UP7711U8 RTM880T-792-LF max17480G rtl8112 UP7711 UP7714BMA5-00 RS780MN rtm880t G780P11U IT8752E

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in an isolated plastic envelope featuring high avalanche energy capability, stable off-state characteristics, fast


    OCR Scan
    PDF PHX1N60

    TRansistor L 701

    Abstract: vmk 5 pin BUK995-60A
    Text: Philips Components Data sheet Preliminary specif ication status date of issue March 1991 9 0 BUK995-60A PowerMOS transistor Logic Level SensorFET 5bE D PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancem ent mode logic level field-effect power transistor in a 5 pin plastic


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    PDF OT263 BUK995-60A 004M7b5 TRansistor L 701 vmk 5 pin BUK995-60A