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    RECOVERY TIME MOSFET ST 26NM60N Search Results

    RECOVERY TIME MOSFET ST 26NM60N Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    RECOVERY TIME MOSFET ST 26NM60N Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: STFI26NM60N N-channel 600 V, 0.135 Ω, 20 A MDmesh II Power MOSFET in I²PAKFP package Datasheet — production data Features Type VDSS RDS on max ID STFI26NM60N 600 V < 0.165 Ω 20 A • Fully insulated and low profile package with increased creepage path from pin to heatsink


    Original     		STFI26NM60N O-281) PDF

    26NM60N

    Abstract: IPAK
    Text: STFI26NM60N N-channel 600 V, 0.135 Ω, 20 A MDmesh II Power MOSFET in I²PakFP Preliminary data Features Type VDSS RDS on max ID STFI26NM60N 600 V < 0.165 Ω 20 A • Fully insulated and low profile package with increased creepage path from pin to heatsink


    Original     		STFI26NM60N 26NM60N IPAK PDF

    Untitled

    Abstract: No abstract text available
    Text: STW26NM60N N-channel 600 V, 0.135 Ω typ., 20 A MDmesh II Power MOSFETs in a TO-247 package Datasheet - production data Features Order code VDS RDS on max ID STW26NM60N 600 V 0.165 Ω 20 A • 100% avalanche tested • Low input capacitance and gate charge


    Original     		STW26NM60N O-247 O-247 DocID025246 PDF

    26NM60N

    Abstract: RECOVERY TIME MOSFET ST 26NM60N STF26NM60N-H STF26NM60N 26nm60
    Text: STF26NM60N-H N-channel 600 V, 0.135 Ω, 20 A MDmesh II Power MOSFET in TO-220FP Features Type VDSS RDS on max ID STF26NM60N-H 600 V < 0.165 Ω 20 A • 100% avalanche tested ■ Low input capacitance and gate charge ■ 3 1 Low gate input resistance


    Original     		STF26NM60N-H O-220FP 26NM60N RECOVERY TIME MOSFET ST 26NM60N STF26NM60N-H STF26NM60N 26nm60 PDF

    26NM60N

    Abstract: STW26NM60N STW26NM60N-H RECOVERY TIME MOSFET ST 26NM60N STW26NM60
    Text: STW26NM60N-H N-channel 600 V, 0.135 Ω, 20 A TO-247 MDmesh II Power MOSFET Features Type VDSS RDS on max ID STW26NM60N-H 600 V < 0.165 Ω 20 A • 100% avalanche tested ■ Low input capacitance and gate charge ■ 2 Low gate input resistance TO-247


    Original     		STW26NM60N-H O-247 26NM60N STW26NM60N STW26NM60N-H RECOVERY TIME MOSFET ST 26NM60N STW26NM60 PDF

    STL-26

    Abstract: No abstract text available
    Text: STL26NM60N N-channel 600 V, 0.160 Ω, 19 A PowerFLAT 8x8 HV ultra low gate charge MDmesh™ II Power MOSFET Features Type VDSS @ TJmax RDS(on) max ID STL26NM60N 650 V < 0.185 Ω 19 A (1) 3 3 3 "OTTOMVIEW ' $ 1. The value is rated according to Rthj-case


    Original     		STL26NM60N STL26NM60N STL-26 PDF

    hv 102 st

    Abstract: 26NM60N
    Text: STL26NM60N N-channel 600 V, 0.160 Ω, 19 A PowerFLAT 8x8 HV ultra low gate charge MDmesh™ II Power MOSFET Features Order code VDSS @ TJmax RDS on max ID STL26NM60N 650 V < 0.185 Ω 19 A (1) 3 3 3 "OTTOMVIEW ' $ 1. The value is rated according to Rthj-case


    Original     		STL26NM60N STL26NM60N hv 102 st 26NM60N PDF

    26NM60N

    Abstract: STW26NM60N STP26NM60N STF26NM60N RECOVERY TIME MOSFET ST 26NM60N stp26nm60 26NM60 MOSFET 400 A stw26n 26nm
    Text: STF26NM60N STP26NM60N, STW26NM60N N-channel 600 V, 0.135 Ω, 20 A MDmesh II Power MOSFET TO-220FP, TO-220, TO-247 Features Type VDSS RDS on max ID STF26NM60N 600 V < 0.165 Ω 20 A STP26NM60N STW26NM60N 600 V 600 V < 0.165 Ω < 0.165 Ω • 100% avalanche tested


    Original     		STF26NM60N STP26NM60N, STW26NM60N O-220FP, O-220, O-247 STP26NM60N O-220 26NM60N STW26NM60N STP26NM60N STF26NM60N RECOVERY TIME MOSFET ST 26NM60N stp26nm60 26NM60 MOSFET 400 A stw26n 26nm PDF

    26NM60N

    Abstract: STF26NM60N STW26NM60N STP26NM60N RECOVERY TIME MOSFET ST 26NM60N STb26NM60N marking code 5 stp26nm60
    Text: STB26NM60N, STF26NM60N STP26NM60N, STW26NM60N N-channel 600 V, 0.135 Ω, 20 A MDmesh II Power MOSFET D2PAK, TO-220FP, TO-220, TO-247 Features Type VDSS RDS on max ID STB26NM60N 600 V < 0.165 Ω 20 A STF26NM60N 600 V < 0.165 Ω 20 A STP26NM60N 600 V


    Original     		STB26NM60N, STF26NM60N STP26NM60N, STW26NM60N O-220FP, O-220, O-247 STB26NM60N STP26NM60N 26NM60N STF26NM60N STW26NM60N STP26NM60N RECOVERY TIME MOSFET ST 26NM60N STb26NM60N marking code 5 stp26nm60 PDF

    stp26nm60

    Abstract: STW26NM60N 26NM60N STP26NM60N 26nm60 STI26NM60N STB26NM60N STB26NM60 STF26NM60N
    Text: STB26NM60N, STF26NM60N, STI26NM60N STP26NM60N, STW26NM60N N-channel 600 V, 0.135 Ω typ., 20 A MDmesh II Power MOSFET in D2PAK, I2PAK, TO-220, TO-220FP and TO-247 packages Datasheet — production data Features Type VDSS RDS on max ID STB26NM60N 600 V


    Original     		STB26NM60N, STF26NM60N, STI26NM60N STP26NM60N, STW26NM60N O-220, O-220FP O-247 STB26NM60N STF26NM60N stp26nm60 STW26NM60N 26NM60N STP26NM60N 26nm60 STB26NM60 PDF

    26NM60N

    Abstract: RECOVERY TIME MOSFET ST 26NM60N 26nm60
    Text: STx26NM60N N-channel 600 V, 0.135 Ω, 20 A MDmesh II Power MOSFET D2PAK, I2PAK, TO-220, TO-220FP, TO-247 Features Type VDSS RDS on max ID STB26NM60N 600 V < 0.165 Ω 20 A STF26NM60N 600 V < 0.165 Ω 20 A STI26NM60N 600 V < 0.165 Ω 20 A STP26NM60N


    Original     		STx26NM60N O-220, O-220FP, O-247 STB26NM60N STF26NM60N STI26NM60N STP26NM60N STW26NM60N O-220FP 26NM60N RECOVERY TIME MOSFET ST 26NM60N 26nm60 PDF

    STW26NM60N

    Abstract: STF26NM60 STP26NM60N stp26nm60 STI26NM60N 26NM60N 156-42 26NM60 stp26 STB26NM60
    Text: STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N N-channel 600 V, 0.135 Ω, 20 A MDmesh II Power MOSFET in D2PAK, I2PAK, TO-220, TO-220FP and TO-247 packages Datasheet — production data Features Type VDSS RDS on max ID STB26NM60N 600 V < 0.165 Ω


    Original     		STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N O-220, O-220FP O-247 STB26NM60N STF26NM60N STW26NM60N STF26NM60 STP26NM60N stp26nm60 STI26NM60N 26NM60N 156-42 26NM60 stp26 STB26NM60 PDF

    Untitled

    Abstract: No abstract text available
    Text: STB26NM60N, STF26NM60N, STP26NM60N N-channel 600 V, 0.135 Ω typ., 20 A MDmesh II Power MOSFETs in D2PAK, TO-220FP and TO-220 packages Datasheet - production data Features TAB Order codes 3 VDS RDS on max ID 600 V 0.165 Ω 20 A STB26NM60N 1 3 D²PAK 1


    Original     		STB26NM60N, STF26NM60N, STP26NM60N O-220FP O-220 STB26NM60N STF26NM60N O-220FP O-220 PDF

    26NM60ND

    Abstract: STW26NM60ND 26nm60 26nm60n
    Text: STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND N-channel 600 V, 0.145 Ω typ., 21 A, FDmesh II Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247 packages Datasheet - production data Features TAB Order codes VDS @ Tjmax RDS on max ID 650 V 0.175


    Original     		STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND O-220FP, O-220 O-247 STB26NM60ND STF26NM60ND O-220FP 26NM60ND STW26NM60ND 26nm60 26nm60n PDF