Untitled
Abstract: No abstract text available
Text: ADVANCED PO W ER Te c h n o l o g y 1 - Cathoda 2 - Anode Back of Case - Cathode APT15D60K APT15D50K 600V 500V 15A 15A ULTRAFAST SOFT RECOVERY RECTIFIER DIODE P R O D U C T A P P L IC A T IO N S PRODUCT FEATURES P R O D U C T B E N E F IT S • Anti-Parallel Diode
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APT15D60K
APT15D50K
T0-220
O-22QAB
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DUT1505
Abstract: DUT1505-AG DUT1505AL DUT1505ALN DUT1505-GG DUT1505S silicon carbide
Text: August 2009 DUT1505 – 500V, 15A Preliminary HIGH EFFICIENCY, TEMPERATURE INDEPENDENT GaAs RECTIFIER DIODE Features General Description High maximum junction temperature; up to +260°C vs. +175°C for silicon diodes Lower and temperature independent dynamic recovery characteristics over the
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DUT1505
DUT1505
DUT1505-AG
DUT1505AL
DUT1505ALN
DUT1505-GG
DUT1505S
silicon carbide
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DUL1505
Abstract: DUL1505-AG DUL1505AL DUL1505ALN DUL1505-GG DUL1505S
Text: August 2009 DUL1505 – 500V, 15A Preliminary HIGH EFFICIENCY, TEMPERATURE INDEPENDENT GaAs RECTIFIER DIODE Features General Description High maximum junction temperature; up to +260°C vs. +175°C for silicon diodes Lower and temperature independent dynamic recovery characteristics over the
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DUL1505
DUL1505
DUL1505-AG
DUL1505AL
DUL1505ALN
DUL1505-GG
DUL1505S
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NS1005
Abstract: No abstract text available
Text: ¿ O A d v a n c ed P o w er T e c h h o lo g t • * 1 • Cathode 2 -Anode Back of Caaa-Cathoda APT15D60B APT15D50B 600V 500V 15A 15A ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PR O D U C T A PP LIC A T IO N S P R O D U C T F E A TU RE S P R O D U C T B ENEFITS
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APT15D60B
APT15D50B
O-247
O-247AD
NS1005
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information HiperFETTM Power MOSFETs Q3-Class VDSS ID25 IXFT15N100Q3 IXFH15N100Q3 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 1000V = 15A Ω ≤ 1.05Ω ≤ 250ns TO-268 (IXFT) G S Symbol Test Conditions
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IXFT15N100Q3
IXFH15N100Q3
250ns
O-268
15N100Q3
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1N3208(R)
Abstract: No abstract text available
Text: 1N3208 R T HR U 1N3214A(R) DACO SEMICONDUCTOR CO., LTD. STANDARD RECOVERY DIODE STUD TYPES Features 15A 15 Amp Rectifier 50-600 Volts High Surge Capability Types Up to 600V V RRM DO-5 Maximum Ratings Operating Temperature: Storage Temperature: Part Number
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1N3208
1N3214A
1N3209
1N3210
1N3211
1N3212
1N3213
1N3214
1N3208(R)
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IXFH15N100Q3
Abstract: IXFT15N100Q3
Text: Advance Technical Information IXFT15N100Q3 IXFH15N100Q3 HiperFETTM Power MOSFETs Q3-Class VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 1000V = 15A Ω ≤ 1.05Ω ≤ 250ns TO-268 (IXFT) G S D (Tab) Symbol Test Conditions
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IXFT15N100Q3
IXFH15N100Q3
250ns
O-268
O-247
15N100Q3
IXFH15N100Q3
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NTE5953
Abstract: NTE5942 NTE5944 NTE5948 NTE5952 NTE5945 NTE5940 NTE5941 NTE5943 NTE5946
Text: NTE5940 thru NTE5953 Silicon Power Rectifier Diode, 15 Amp Description and Features: D Low Thermal Impedance D High Case Temperarure D Excellent Reliability D Available in Anode–to–Case or Cathode–to–Case Style Ratings and Characteristics: Average Forward Current TC = +150°C Max , IF(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
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NTE5940
NTE5953
NTE5953
NTE5942
NTE5944
NTE5948
NTE5952
NTE5945
NTE5941
NTE5943
NTE5946
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Untitled
Abstract: No abstract text available
Text: 1N3208 R THRU 1N3214(R) DACO SEMICONDUCTOR CO., LTD. STANDARD RECOVERY DIODES STUD TYPE 15A Features High Surge Capability 15Amp Rectifier 50-600 Volts Types up to 600V V RRM DO-5 Maximum Ratings Operating Temperature: -65 C to +175 B Storage Temperature: -65 C to +175
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1N3208
1N3214
15Amp
1N3209
1N3210
1N3211
1N3212
1N3213
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RURP1S60
Abstract: RURP880 RURP3080 ULTRAFAST 600V RURG8040 MUR810 MUR1550
Text: 5-3 ULTRAFAST SINGLE DIODES Selection Guide Continued HARRIS ULTRAFAST RECOVERY RECTIFIER PRODUCT LINE 2 LEAD TO-247 TO-220AC ' f <AVG) 15A SINGLE LEAD TO-21B •f <AVG> 30A 30A ^F(AVQ) 75A/B0A 50A 50A 75A/80A Vrrm BA 100A 150A 100V MUR810 RURP810 MUR1510 RURP3010 RURG3010
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O-220AC
O-247
O-21B
MUR810
RURP810
MUR815
RURP815
MUR820
RURPB20
MUR840
RURP1S60
RURP880
RURP3080
ULTRAFAST 600V
RURG8040
MUR1550
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ICE3B0365J
Abstract: ICE3BR4765J TDA16888 ICE2A765P2 ICE2PCS01G ICE1PCS02G ICE2B0565 ICE1PCS02 ICE2pcs02 IPI60R099CP
Text: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Pocket Guide www.infineon.com/powermanagement N-Channel MOSFETs 500V … 900V CoolMOSTM Partnumber RDS on , ID, Qg(typ)
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SPP21N50C3
SPA21N50C3
SPI21N50C3
SPP16N50C3
SPA16N50C3
SPI16N50C3
SPW21N50C3
SPP12N50C3
SPA12N50C3
SPI12N50C3
ICE3B0365J
ICE3BR4765J
TDA16888
ICE2A765P2
ICE2PCS01G
ICE1PCS02G
ICE2B0565
ICE1PCS02
ICE2pcs02
IPI60R099CP
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information HiperFETTM Power MOSFETs Q3-Class VDSS ID25 IXFT30N50Q3 IXFH30N50Q3 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 500V = 30A Ω ≤ 200mΩ TO-268 (IXFT) G S Symbol Test Conditions D (Tab) Maximum Ratings
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IXFT30N50Q3
IXFH30N50Q3
O-268
30N50Q3
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IXFH30N50Q3
Abstract: No abstract text available
Text: Advance Technical Information IXFT30N50Q3 IXFH30N50Q3 HiperFETTM Power MOSFETs Q3-Class VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 500V = 30A Ω ≤ 200mΩ TO-268 (IXFT) G S D (Tab) Symbol Test Conditions Maximum Ratings
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IXFT30N50Q3
IXFH30N50Q3
O-268
O-247
30N50Q3
IXFH30N50Q3
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bridge rectifier 24V AC to 24v dc
Abstract: 1N5408 smd diodes GSIB1560
Text: Switch Mode Power Supply Table of Contents ADAPTOR, Buck Capacitance. 3 ADAPTOR, EMI Filtering. 4
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250ns;
DO-204AL
DO-41)
DO-220AA
V-540V;
V-440V
bridge rectifier 24V AC to 24v dc
1N5408 smd diodes
GSIB1560
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500V N-Channel IGBT TO-3P
Abstract: IRGP430U
Text: PD - 9.780 IRGP430U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve VCES = 500V VCE(sat) ≤ 3.0V
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IRGP430U
500V N-Channel IGBT TO-3P
IRGP430U
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transistor C632
Abstract: igbt 500V 15A c632 DIODE c630 diode IRGB430UD2 C632
Text: P D - 9.1067 bitemational [ïôr |Rectifier IRGB430UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features V c es = 500V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes
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IRGB430UD2
O-220AB
O-22QAB
transistor C632
igbt 500V 15A
c632 DIODE
c630 diode
IRGB430UD2
C632
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Diode 400V 5A
Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM
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2C415
2C425
2C444
2C746
2N1131L
2N1132
2N1132CSM
2N1132DCSM
2N1208
2N1209
Diode 400V 5A
lm1083
BZY55C
transistor 2n1208
bc109 spice
IRF9024
CV7404
mnt6337j
sml1258
SML1004RGN
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Untitled
Abstract: No abstract text available
Text: PD- 9.1577A International Rectifier IGR IRG4PH40KD PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc=10MS, V c c = 720V , T j = 125°C,
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IRG4PH40KD
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C583
Abstract: D-12 IRGB430U C586
Text: PD - 9.783A IRGB430U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve VCES = 500V VCE(sat) ≤ 3.0V
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IRGB430U
O-220AB
C-586
C583
D-12
IRGB430U
C586
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D-12
Abstract: IRGB430U
Text: PD - 9.783A IRGB430U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve VCES = 500V VCE(sat) ≤ 3.0V
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IRGB430U
O-220AB
C-586
D-12
IRGB430U
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OM6021SC
Abstract: OM6022SC OM6023SC OM6021
Text: OM6021SC OM6023SC OM6022SC OM6024SC POWER MOSFETS IN HERMETIC PACKAGE 100V T hru 500V, Up To 35 Am p, N-Channel Power MOSFETs In JEDEC TO-259AA Package FEATURES • Isolated Side-Tab Hermetic Metal Package • Fast Switching, Low Drive Current • Ease of Paralleling For Added Power
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OM6021
OM6023SC
OM6Q22SC
OM6Q24SC
O-259AA
MIL-S-19500,
O-259AA
OM6021SC
OM6022SC
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bridge rectifier single phase 240V AC
Abstract: 220v 100a diode bridge mosfet 3kw PFC 3kw 3kw mosfet 3kw pfc bridge rectifier 240V AC TRANSISTOR 3kw 220v 25a diode bridge bridge rectifier 240V AC 240v dc
Text: LMH5010RB 500V 35A APPLICATION SPECIFIC POWER MODULE FOR 3KW CONVERTER PRODUCT DESCRIPTION The LMH5010RB is an Application Specific Power Module ASPM that integrates all the necessary power functions to build a converter, up to 3KW, with a 220/240V AC input. System design time is dramatically
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LMH5010RB
220/240V
100KHz
6160xx1T2300
F-33700
bridge rectifier single phase 240V AC
220v 100a diode bridge
mosfet 3kw
PFC 3kw
3kw mosfet
3kw pfc
bridge rectifier 240V AC
TRANSISTOR 3kw
220v 25a diode bridge
bridge rectifier 240V AC 240v dc
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igbt inverter welder schematic
Abstract: SCHEMATIC 1000w smps 48V SMPS 1000w 24V 10A SMPS smps 500w half bridge smps 1000W full bridge mosfet smps 48V 100w SMPS inverter welder schematic half bridge converter 2kw
Text: March 2002 Analog Discrete Interface & Logic Optoelectronics Discrete Solutions for Power Supplies Across the board. Around the world. Discrete Solutions for Power Supplies Fairchild Semiconductor is one of the world’s leading providers of Discrete Power Products, including Metal Oxide Semiconductor Field
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BYC15-600
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary BYC15-600 DIODE RECTIFIER DIODE, HYPERFAST DESCRIPTION The UTC BYC15-600 is a rectifier diode. It provides the designers with ultra-fast switching and low switching loss in associated MOSFET. The UTC BYC15-600 is suitable for half-bridge lighting ballasts,
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BYC15-600
BYC15-600
BYC15L-600-
BYC15G-600-
O-220AC
QW-R601-026
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