Untitled
Abstract: No abstract text available
Text: Bulletin 12108 rev. D 03/98 International I R Rectifier SAFElR Series 8EWS.S SURFACE MOUNTABLE INPUT RECTIFIER DIODE VF < 1V@ 5A Description/Features 'fsm = 200A The 8EWS.S rectifier SAFElR series has been VRRM800 to 1600V optimized for very low forward voltage drop, with
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O-252AA
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 1R5JZ41J R5NZ41 TO SHIBA RECTIFIER SILICON DIFFUSED TYPE 1R5JZ41, 1R5NZ41 Unit in mm GENERAL PURPOSE RECTIFIER APPLICATIONS. • • • • Average Forward Current : Ip AV = 1-5A Repetitive Peak Reverse Voltage : V rrm = 600, 1000V Peak One Cycle Surge Forward Current (Non Repetitive)
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1R5JZ41J
R5NZ41
1R5JZ41,
1R5NZ41
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 1R5JZ41J R5NZ41 TO SHIBA RECTIFIER SILICON DIFFUSED TYPE 1R5JZ41, 1R5NZ41 Unit in mm GENERAL PURPOSE RECTIFIER APPLICATIONS. • • • • Average Forward Current : Ip AV = 1-5A Repetitive Peak Reverse Voltage : V rrm = 600, 1000V Peak One Cycle Surge Forward Current (Non Repetitive)
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1R5JZ41J
R5NZ41
1R5JZ41,
1R5NZ41
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Untitled
Abstract: No abstract text available
Text: RECTIFIER, up to 1kV, 5A, 2 jis January 7, 1998 1N5550 1N5551 1N5552 1N5553 1N5554 3SM2 3SM4 3SM6 3SM8 3SM0 TEL805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com AXIAL LEADED HERMETICALLY SEALED STANDARD RECOVERY RECTIFIER DIODE QUICK REFERENCE DATA
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1N5550
1N5551
1N5552
1N5553
1N5554
TEL805-498-2111
1N5550
1N5551
1N5552
1N5553
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SR506 Diode
Abstract: diode 6A 1000v SM4007 Diode Diode SR360 diode her307
Text: Room I, Floor 4, 13 Yip Fung Street, Hong Kong Tel: +86 769 8118 8110 or +852 8106 7033 Fax: +852 8106 7099 Kingtronics Diode & Rectifier List Diode Rectifier Diode Rectifier M7 SMD4001-4007 Diode SR560 (5A 60V) Bulk RoHS. DO-27 S1A -S1M Diode UF4004 (1А 400V) Bulk RoHS. DO-41
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SMD4001-4007)
SR560
DO-27
UF4004
DO-41
UF4007
10A10
LL4148
FR101-FR107
SR506 Diode
diode 6A 1000v
SM4007 Diode
Diode SR360
diode her307
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3SM diode
Abstract: TL 5551 DIODE 3SM rectifier 50a rectifier 5A 1000V 042T
Text: iû^innMsc^ January 7, 1998 RECTIFIER, up to 1kV, 5A, 2\iS 1N5550 1N5551 1N5552 1N5553 1N5554 3SM2 3SM4 3SM6 3SM8 3SM0 TEL805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com AXIAL LEADED HERMETICALLY SEALED STANDARD RECOVERY RECTIFIER DIODE QUICK REFERENCE
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1N5550
1N5551
1N5552
1N5553
1N5554
TEL805-498-2111
3SM diode
TL 5551
DIODE 3SM
rectifier 50a
rectifier 5A 1000V
042T
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Q63100
Abstract: r5jz toshiba jz
Text: T O SH IB A 1 R5 JZ 4 1 ,1 R5NZ41 TOSHIBA RECTIFIER 1 RSI7Æ1 SILICON DIFFUSED TYPE 1RSN741 Unit in mm GENERAL PURPOSE RECTIFIER APPLICATIONS. • • • • Average Forward Current : Ip AV = 1-5A Repetitive Peak Reverse Voltage : V rrjv[ = 600, 1000V Peak One Cycle Surge Forward Current (Non Repetitive)
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R5NZ41
1RSN741
1R5JZ41
1R5NZ41
961001EAA2'
Q63100
r5jz
toshiba jz
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rectifier 5A 1000V
Abstract: No abstract text available
Text: 1R5 I,N Z41 O SILICON DIFFUSED TYPE RECTIFIER G E N E R A L PU RPO SE RECTIFIER A PPLICA T IO N S. U n it in m m • Average Forward Current : I f (AV) =1-5A • Repetitive Peak Reverse Voltage : ^rRRM ^ 600, 1000V • Peak One Cycle Surge Forward Current (Non Repetitive)
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1R5JZ41
1R5NZ41
rectifier 5A 1000V
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8EWS08S
Abstract: 8EWS10S 8EWS12S AN-994 8EWS10
Text: Bulletin I2108 rev. G 08/00 SAFEIR Series 8EWS.S SURFACE MOUNTABLE INPUT RECTIFIER DIODE VF Description/Features IFSM = 200A < 1V @ 5A VRRM 800 to 1200V The 8EWS.S rectifier SAFEIR series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology
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I2108
8EWS08S
8EWS10S
8EWS12S
AN-994
8EWS10
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8EWS10
Abstract: No abstract text available
Text: Bulletin I2108 rev. G 08/00 SAFEIR Series 8EWS.S SURFACE MOUNTABLE INPUT RECTIFIER DIODE VF Description/Features IFSM = 200A < 1V @ 5A VRRM 800 to 1200V The 8EWS.S rectifier SAFEIR series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology
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I2108
08-Mar-07
8EWS10
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8EWS08S
Abstract: 8EWS10S 8EWS12S AN-994
Text: Bulletin I2108 rev. G 08/00 SAFEIR Series 8EWS.S SURFACE MOUNTABLE INPUT RECTIFIER DIODE VF Description/Features IFSM = 200A < 1V @ 5A VRRM 800 to 1200V The 8EWS.S rectifier SAFEIR series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology
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I2108
12-Mar-07
8EWS08S
8EWS10S
8EWS12S
AN-994
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Untitled
Abstract: No abstract text available
Text: T O SH IB A U05NU44 TOSHIBA SUPER FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE U05NU44 Unit in mm SWITCHING TYPE POWER SUPPLY APPLICATIONS • • • V rrm = 1000V iF AV = 0-5A Repetitive Peak Reverse Voltage Average Forward Current Very Fast Reverse-Recovery Time
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U05NU44
100ns
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 1R5NH45 TOSHIBA FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE 1 R5NH45 SWITCHING TYPE PO W ER SUPPLY APPLICATIONS • Repetitive Peak Reverse Voltage Vr r m =1000V • Average Forward Current I f AV = 1-5A • Very Fast Reverse-Recovery Time trr = 200ns (Max.)
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1R5NH45
R5NH45
200ns
961001EAA2'
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Untitled
Abstract: No abstract text available
Text: Bulletin 12108 rev. C 11/97 Inte rn ation al I ö R Rectifier SAFElR Series 8EWS.S SURFACE MOUNTABLE INPUT RECTIFIER DIODE vF < 1V@ 5A D escription/Features 'fsm = 200A T he 8EW S .S rectifier SAFElR series has been V RRM8 0 0 to 1 2 0 0 V o p tim ized fo r ve ry low forw ard voltage drop, with
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O-252AA
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OZ 9936
Abstract: DIODE RECTIFIER BRIDGE SINGLE 200A 8EWS12S 8EWS16S AN-994 8EWS08S 8EWS10S 8EWS10
Text: I2108 rev. F 10/99 SAFEIR Series 8EWS.S SURFACE MOUNTABLE INPUT RECTIFIER DIODE VF < 1V @ 5A IFSM = 200A Description/Features VRRM 800 to 1600V The 8EWS.S rectifier SAFEIR series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has reliable operation up to 150° C junction
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I2108
OZ 9936
DIODE RECTIFIER BRIDGE SINGLE 200A
8EWS12S
8EWS16S
AN-994
8EWS08S
8EWS10S
8EWS10
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S2M sm
Abstract: S2G SG
Text: - A . G eneral ^ S e m ic o n d u c t o r _ . . « . . . S2AthruS2M Surface Mount Glass Passivated Rectifier Reverse Voltage 50 to 1000V DO-214AA SMB F o rW a rt C u rre n t 1 5A Features_ • Plastic package has Underwriters Laboratory
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DO-214AA
DO-214AA
MIL-STD-750,
S2M sm
S2G SG
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 05NH46 TOSHIBA FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE 0 5NH4 6 Unit in mm SWITCHING TYPE POWER SUPPLY APPLICATIONS • • • Repetitive Peak Reverse Voltage Average Forward Current Very Fast Reverse-Recovery Time € V r r m = 1000V ! f AV = 0-5A
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05NH46
200ns
961001EAA2'
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 05NH45 TOSHIBA FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE 0 5 N H4 5 Unit in mm SWITCHING TYPE PO W ER SUPPLY APPLICATIONS • • • Repetitive Peak Reverse Voltage Average Forward Current Very Fast Reverse-Recovery Time V r r m = 1000V ! f AV = 0-5A
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05NH45
200ns
961001EAA2'
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 1R5NH41 TOSHIBA FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE 1 R5NH41 Unit in mm SWITCHING TYPE POWER SUPPLY APPLICATIONS • • • Repetitive Peak Reverse Voltage : V r r m = 1000V Average Forward Current : Ip AV = 1-5A Very Fast Reverse-Recovery Time : trr = 400ns (Max.)
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1R5NH41
R5NH41
400ns
961001EAA2'
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PDF
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05NH45
Abstract: No abstract text available
Text: TOSHIBA 05NH45 TOSHIBA FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE 0 5NH4 5 SWITCHING TYPE POWER SUPPLY APPLICATIONS • • • Repetitive Peak Reverse Voltage Average Forward Current Very Fast Reverse-Reeovery Time VrrM = io o o v :F AV = 0-5A a Unit in mm
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05NH45
200ns
961001EAA2'
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PDF
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1R5NH45
Abstract: No abstract text available
Text: TOSHIBA 1R5NH45 TOSHIBA FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE 1R5N H4 5 Unit in mm SWITCHING TYPE PO W ER SUPPLY APPLICATIONS • • • Repetitive Peak Reverse Voltage Average Forward Current Very Fast Reverse-Reeovery Time Vr r m -IOOOV ÏF AV = 1-5A
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1R5NH45
200ns
961001EAA2'
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 05NU41 TOSHIBA SUPER FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE 05NU41 Unit in mm SWITCHING TYPE PO W ER SUPPLY APPLICATIONS • • • Repetitive Peak Reverse Voltage Average Forward Current Very Fast Reverse-Recovery Time V r r m = 10 00 V ! f AV = 0-5A
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05NU41
100ns
961001EAA2'
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DB151S
Abstract: No abstract text available
Text: SIYU R DB151S . DB157S Surface Mount Bridge-Rectifier 表面安装桥式整流器 反向电压 50-1000V 正向电流 1. 5A Reverse Voltage 50 to 1000V Forward Current 1.5 A DBS 特征 Features •高电流浪涌承受能力 High surge current Capability
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DB151S
DB157S
0---1000V
DB151S
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DSB15T
Abstract: DSB15TB DSB15TC DSB15TE DSB15TG DSB15TJ DSB15TL
Text: Ordering number : EN2376 ^ No.2376 1 D S B 15T 1 / IL _ Diffused Junction Type Silicon Diode 1.5A Power Rectifier F e a tu r e s • P lastic molded structure • P eak reverse voltage V r m = —100 to —1000V • A verage rectified cu rren t Io = l-5A A b s o lu te M ax im u m R a tin g s a t Ta ~ 25°C
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EN2376
-100to
DSB15T
DSB15TB
DSB15TC
DSB15TE
DSB15TG
DSB15TJ
DSB15TL
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