Untitled
Abstract: No abstract text available
Text: Bulletin 120205 International S»r]Rectifier 12F R SERIES STANDARD RECOVERY DIODES Stud Version Features H igh su rg e cu rre n t c a p a b ility A va la n ch e typ e s a va ila b le S tud c a th o d e and stud a n o d e ve rs io n W id e cu rre n t range
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ROHM BP5053-12 circuit diagrams
Abstract: BP5053-12 CMF01 311VDC
Text: BP5053-12 Non-isolated AC/DC converter Dimensions Unit : mm Absolute Maximum Ratings Conditions DC Refer to derating curve Ambient temperature + the module self-heating Tcmax PEAK value of current C mA 10.1MAX. 28.2MAX. Marking Side Marking Side Unit V C
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BP5053-12
25MAX.
55MAX.
250mA
ROHM BP5053-12 circuit diagrams
BP5053-12
CMF01
311VDC
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3B24WA
Abstract: VACI 3B24W 72 diode 3824WA RAYTHEON Raytheon Company
Text: ^YTHEOn T e c lin ic a l 3B24WA In f o r m a t io n TECHNICAL INFORMATION SERVICE HALF-WAVE RECTIFIER MECHANICAL DATA The 3B24WA is a h a lf- w a v e , high vacuum re c tifie r tu b e w ith a "b o n d e d th o ria ” tun gsten fila m e n t. Its rugged c o n s tru c tio n m akes it ideal fo r a p p lic a tio n s in v o lv in g severe shock and v ib ra tio n .
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3B24WA
3B24WA
VACI
3B24W
72 diode
3824WA
RAYTHEON
Raytheon Company
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IRHG7110
Abstract: MO-036AB 31VDS
Text: uaia aieei no. ku-s .ö/ua INTERNATIONAL RECTIFIER AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS IRHG711Q N-CHANNEL RAD HARD 100 Volt, 0.70®, RAD HARD HEXFET Product Summary international Rectifier’s MEGA RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability and breakdown
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IRHG711Q
1x10s
1x1012
H-184
IRHG7110
H-185
MO-036AB
31VDS
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Untitled
Abstract: No abstract text available
Text: International ¡^Rectifier_ HEXFET Power MOSFET P D -9.1271 IRFD214 Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements V d ss = 2 5 0 V ^ D S o n = 2 . 0 ß
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IRFD214
DQ2244S
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CA3080T
Abstract: ed 3b diod a 3140 12 diod full wave bridge rectifier ic BA 10B FULL WAVE RECTIFIER a3140 CA3130 ica ca3130 ca 3140a a3140 equivalent
Text: CA3140, CA3140A Semiconductor September 1998 4.5MHz, BiMOS Operational Amplifier with MOSFET Input/Bipolar Output The CA3140A and CA3140 are integrated circuit operational am plifiers that com bine the advantages of high voltage PM O S transistors with high voltage bipolar transistors on a single
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CA3140,
CA3140A
CA3140A
CA3140
CA3080T
ed 3b diod
a 3140
12 diod full wave bridge rectifier ic
BA 10B FULL WAVE RECTIFIER
a3140
CA3130
ica ca3130
ca 3140a
a3140 equivalent
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ST diod
Abstract: Diode IOR 10 dc
Text: | . I PD- 5041 In terna tional TOR Rectifier preliminary CPV364M4 U IGBT SIP MODULE UltraFast IGBT Features • • • • Fully isolated printed circu it board m ount package S w itch in g-lo ss rating includes all "tail" losses HEXFRED so ft u ltra fa st diod es
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CPV364M4
ST diod
Diode IOR 10 dc
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Untitled
Abstract: No abstract text available
Text: PD -91736 International I R Rectifier IRG4RC10KD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast IGBT Features • S ho rt C ircuit Rated U ltraFast: O ptim ize d for high o p era ting fre q u e n cie s >5.0 kHz , and S hort
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IRG4RC10KD
-252A
ratio233
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10RIA10
Abstract: HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF
Text: Index International Rectifier Government and Space Products Level of Quality Part Number Rectifiers Voltage Current CECC Issue Issue Assessment and CECC V (A) Specs Number Date 50 000 Screen Level Options Fax-on-Demand CECC-Qualifed, Europe Mfg. in Italy
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DO-203AA
HFA40HF120
HFA40HF60
O-254AA
HFA35HB120
HFA35HB120C
HFA35HB60
HFA35HB60C
O-258AA
HFA45HC120C
10RIA10
HFA40HF120
irfm9034
10RIA100
10RIA120
10RIA20
10RIA40
10RIA60
JANSR2N7261
70HF
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lta 301
Abstract: D-12 IRGBC20M c306 TRANSISTOR
Text: PD - 9.1127 IRGBC20M INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve
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IRGBC20M
10kHz)
O-220AB
C-306
lta 301
D-12
IRGBC20M
c306 TRANSISTOR
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GC 301
Abstract: lta 301 D-12 IRGBC20M
Text: PD - 9.1127 IRGBC20M INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve
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IRGBC20M
10kHz)
O-220AB
C-306
GC 301
lta 301
D-12
IRGBC20M
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Untitled
Abstract: No abstract text available
Text: STB70NFS03L N - CHANNEL 30V -0 .0 0 8 Q -7 0 A D2PAK STripFET MOSFET PLUS SCHOTTKY RECTIFIER PRELIMINARY DATA MAIN PRODUCT CHARACTERISTICS MOSFET SCHOTTKY V dss R d S o i i Id 30V <0.01 Q. 70 A I f (a v ) V rrm V F(MAX) 3A 30 V 0.5 1V d 2p a k TO-263 DESCRIPTION:
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STB70NFS03L
O-263
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Untitled
Abstract: No abstract text available
Text: International IQ R Rectifie r PD -5.062 G A75T S 120U PRELIMINARY Ultra-Fast Speed IGBT "HALF-BRIDGE" IGBT INT-A-PAK -• 3 Featu res r • G en eratio n 4 IG BT te ch n o lo g y • U ltra F a st: O p tim ize d fo r high operating fre q u e n cie s 8-40 kHz in hard sw itch ing , >200
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SD840
Abstract: No abstract text available
Text: UNITRODE CORP DD1107S 3 f 92D 9 3 4 7 9 6 3 UNITRODE CORP 11075 POWER SCHOTTKY RECTIFIERS D U SD820 U SD 835 U SD 840 U SD 845 24A Pk, up to 45V DESC R IPT IO N The U S D 8 0 0 series of Schottky barrier power rectifiers is ideally suited for output rectifiers and catch diod e s In
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DD1107S
SD820
SD840
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270W2
Abstract: No abstract text available
Text: 19 - 1198 ; R e v 0 ; 4 /9 7 A i y i X I A I 3-Cell, High-Current, Low-Noise, Step-Up DC-DC Converters with Linear Regulator f- to The MAX1705/MAX1706 are high-efficiency, low-noise, ste p -u p DC-DC converters with an auxiliary lihearregulator output. These devices are intended for use in
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MAX1705/MAX1706
MAX1705
MAX1706
200mA.
200ms)
705/MA
X1706
270W2
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Si9160
Abstract: TSSOP-16 TSSOP-8 footprint
Text: Temic SÌ9160 S e mi c o n d u c t o r s Controller for RF Power Amplifier Boost Converter Features • High Frequency Switching up to 2 MHz • Optimized Output Drive Current (350 mA) • Standby Mode • Wide Bandwidth Feedback Amplifier • Single-Cell Lilon and Three-cell NiCd or NiMH Operation
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S5473S
Si9160
TSSOP-16
TSSOP-8 footprint
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br 123 s
Abstract: BAS54A BR3005 MS15N50 sod-23 BAS54C
Text: Bruckewell Technology Corp., Ltd. Your Best Partner Discrete Semiconductor Product Catalogue 2015 version Diode/ Rectifier MOSFET TVS/ ESD Protector Comp pany Profile P e Bru uckewell teechnology corp. c registe ered in Dela aware, USA A and total capital
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O-252
O-277A
O-277B
MA/DO-214AC
DO-214A
MC/DO-214AB
br 123 s
BAS54A
BR3005
MS15N50
sod-23
BAS54C
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p023h
Abstract: FC00210 sthv102f 0131b er100B FC00200 BSP diod
Text: VIPer100B VIPer100BSP SMPS PRIMARY I.C. PRELIMINARY DATA T YPE VIPer100B/BSP V DSS In R DS on 400V 6 A 1.1 Ω 10 1 PENTAWATT HV FEATURE • ADJUSTABLE SWITCHING FREQUENCY UP TO 200KHZ ■ CURRENT MODE CONTROL ■ SOFT START AND SHUT DOWN CONTROL ■
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VIPer100B
VIPer100BSP
VIPer100B/BSP
200KHZ
PowerSO-10
VIPer100B/100BSP,
p023h
FC00210
sthv102f
0131b
er100B
FC00200
BSP diod
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0141B
Abstract: diod zener 400v zener diod VIPER 300 series 0240B
Text: VIPer100B VIPer100BSP SMPS PRIMARY I.C. PRELIMINARY DATA T YPE VIPer100B/BSP V DSS In R DS on 400V 6A 1.1 Ω 10 1 PENTAWATT HV FEATURE • ADJUSTABLE SWITCHING FREQUENCY UP TO 200KHZ ■ CURRENT MODE CONTROL ■ SOFT START AND SHUT DOWN CONTROL ■ AUTOMATIC BURST MODE OPERATION IN
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VIPer100B
VIPer100BSP
VIPer100B/BSP
200KHZ
PowerSO-10
VIPer100B/100BSP,
0141B
diod zener
400v zener diod
VIPER 300 series
0240B
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Untitled
Abstract: No abstract text available
Text: L6564H High voltage startup transition-mode PFC Datasheet − production data Features • Onboard 700 V startup source ■ Fast “bi-directional” input voltage feedforward 1/V2 correction ■ Accurate adjustable output overvoltage protection ■ Protection against feedback loop
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L6564H
SO-14
SO-14
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Untitled
Abstract: No abstract text available
Text: S V IS llK A S V l -48V to + 5V O utput S w itch in g DC-DC C otnrm ter The MAX650 is a low-power fixed +5V output switching DC-DC converter designed for operation from very high negative input voltages. Alt control functions and a 120V, 250mA PNP transistor are contained in this device, re
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MAX650
250mA
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SmD TRANSISTOR a77
Abstract: vienna rectifier ixys dsei 2x30-06c P6139 IXTN 36N50 C p6139a 36N50 2x30-06c IXYS VUM25-E PFC 2.5kw
Text: D e s ig n a n d E x p e r im e n ta l I n v e s tig a tio n o f a T h r e e - P h a s e H ig h P o w e r D e n s it y H ig h E ffic ie n c y U n it y P o w e r F a c to r P W M V I E N N A R e c tifie r E m p lo y in g a N o v e l I n te g r a te d P o w e r S e m ic o n d u c to r M o d u le
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VUM25-E)
200V/50A
SmD TRANSISTOR a77
vienna rectifier
ixys dsei 2x30-06c
P6139
IXTN 36N50 C
p6139a
36N50
2x30-06c
IXYS VUM25-E
PFC 2.5kw
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TC33369
Abstract: No abstract text available
Text: Semiconductor, Inc. TC33369/70/1/2/3/4 HIGH VOLTAGE POWER SWITCHING REGULATOR FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ ■ ■ ■ The TC33369 through TC33374 are monolithic high voltage power switching regulators that combine the re quired converter functions with a unique programmable
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TC33369/70/1/2/3/4
TC33369
TC33374
TC33369/70/1/2/3/4-1
D-82152
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S288P
Abstract: PW20R light dependent resistor circuit U6792 Near - Infrared Emitting Diod es BPW 23 nf photoconductive cells characteristic
Text: Tem ic Semiconductors Physics and Technology Emitters Materials Infrared emitting diodes IREDs can be produced from a range of different III-V compounds. Unlike the elemen tal semiconductor silicon. the compound III-V semiconductors consists of two different elements of
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