Untitled
Abstract: No abstract text available
Text: Crescent 4 Piece Reversible Ratcheting Combination Wrench Set, Metric Product Details Catalog No. UPC Code Type of Case Catalog Numbers Number of Tools Included Packaging Literature Low Res. Image High Res. Image Stock Item FRRM4 037103184160 Vacuum Pack Tray
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FRRM10,
FRRM12,
FRRM13,
FRRM15
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sot 363 dual smd ea code transistor
Abstract: smd diode 4pin D13 BAT6203WE scl 1444 ADUM1250ARZ CB6 smd transistor smd diode 4pin D11 EA 5pin transistor smd transistor A1 J45 USBMULTILINKBDME
Text: ISL9208EVAL2Z Rev. A User Guide Application Note Description This document is intended for use by individuals engaged in the development of hardware for a 4 to 7 series connected Li-ion battery pack using the ISL9208EVAL2Z board. The evaluation kit consists of the ISL9208EVAL2Z board.
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ISL9208EVAL2Z
ISL9208EVAL2Z
AN1444
sot 363 dual smd ea code transistor
smd diode 4pin D13
BAT6203WE
scl 1444
ADUM1250ARZ
CB6 smd transistor
smd diode 4pin D11
EA 5pin transistor
smd transistor A1 J45
USBMULTILINKBDME
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Untitled
Abstract: No abstract text available
Text: 79C0408 4 Megabit 512k x 8-bit EEPROM MCM CE1 CE2 CE3 CE4 RES R/B WE OE 79C0408 A0-16 128K x 8 128K x 8 128K x 8 128K x 8 I/O0-7 FEATURES DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural space radiation • Total dose hardness:
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79C0408
A0-16
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Untitled
Abstract: No abstract text available
Text: 79C0408 4 Megabit 512k x 8-bit EEPROM MCM Vcc CE1 CE2 Vss R/B A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 Vss 79C0408 Vcc CE3 CE4 Vss A15 RES WE A13 A8 A9 A11 OE A10 Vcc I/O7 I/O6 I/O5 I/O4 I/O3 Vss CE1 CE2 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8
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79C0408
A0-16
-C0408
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Untitled
Abstract: No abstract text available
Text: 79LV0408 Low Voltage 4 Megabit 512k x 8-bit EEPROM CE1 CE2 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8 128K x 8 128K x 8 I/O0-7 Logic Diagram Memory FEATURES: DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural
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79LV0408
A0-16
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79LV0408
Abstract: No abstract text available
Text: 79LV0408 Low Voltage 4 Megabit 512k x 8-bit EEPROM CE1 CE2 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8 128K x 8 128K x 8 I/O0-7 Logic Diagram Memory FEATURES: DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural
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79LV0408
A0-16
79LV0408
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transistor comparison data sheet
Abstract: No abstract text available
Text: 79C0408 4 Megabit 512k x 8-bit EEPROM MCM CE2 CE1 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8 128K x 8 128K x 8 Memory I/O0-7 Logic Diagram FEATURES: DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural space radiation
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79C0408
A0-16
transistor comparison data sheet
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Untitled
Abstract: No abstract text available
Text: 79LV0408 Low Voltage 4 Megabit 512k x 8-bit EEPROM CE1 CE2 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8 128K x 8 128K x 8 I/O0-7 Logic Diagram Memory FEATURES: DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural
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79LV0408
A0-16
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transistor comparison data sheet
Abstract: Maxwell 79lv0408 all data sheet Maxwell 79LV0408
Text: 79LV0408 Low Voltage 4 Megabit 512k x 8-bit EEPROM MCM Vcc CE1 CE2 Vss RDY/BUSY A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 Vss 40 1 79LV0408 20 21 Vcc CE3 CE4 Vss A15 RES WE A13 A8 A9 A11 OE A10 Vcc I/O7 I/O6 I/O5 I/O4 I/O3 Vss CE2 CE1 CE3 CE4 RES
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79LV0408
A0-16
200ns
transistor comparison data sheet
Maxwell 79lv0408
all data sheet
Maxwell
79LV0408
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Untitled
Abstract: No abstract text available
Text: 79C0408 4 Megabit 512k x 8-bit EEPROM MCM CE2 CE1 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8 128K x 8 128K x 8 Memory I/O0-7 Logic Diagram FEATURES: DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural space radiation
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79C0408
A0-16
79C0408
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79LV0408
Abstract: Maxwell 79lv0408
Text: 79LV0408 Low Voltage 4 Megabit 512k x 8-bit EEPROM CE1 CE2 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8 128K x 8 128K x 8 I/O0-7 Logic Diagram Memory FEATURES: DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural
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79LV0408
A0-16
79LV0408
Maxwell 79lv0408
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Untitled
Abstract: No abstract text available
Text: Erem Heavy Duty Power Pak for Precision Cutter Product Details Catalog No. 1500BSF UPC Code 043127078194 Length 4.50 Inches Head Pneumatic Power Style/Cut Type Pack Pressure (PSI) 70-80 PSI Max Cutting Diameter N/A (Inches) Jaw Length N/A (Inches) Head Width
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1500BSF
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79C2040
Abstract: No abstract text available
Text: 79C2040B 20 Megabit 512K x 40-Bit EEPROM MCM FEATURES: DESCRIPTION: 512k x 40-bit EEPROM MCM Maxwell Technologies’ 79C2040B multi-chip module (MCM) memory features a greater than 100 krad (Si) total dose tolerance, dependent upon orbit. Using Maxwell Technologies’ patented radiation-hardened RAD-PAK MCM packaging
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79C2040B
40-Bit)
40-bit
79C2040B
20Megabyte
79C2040
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res pack 7
Abstract: res pack 2n3906 npn dual p1014 dual pack 2N3904 16v8 2N3906 res pack 8 P10 module schematic 2N3904
Text: General: [email protected] Technical: [email protected] Web Site: www.parallax.com Educational: www.stampsinclass.com 599 Menlo Drive, Suite 100 Rocklin, CA 95765, USA Office: 916 624-8333 Fax: (916) 624-8003 BASIC Stamp BS2-IC Module Schematic Rev. J
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2N3904)
2N3906)
res pack 7
res pack
2n3906 npn dual
p1014
dual pack 2N3904
16v8
2N3906
res pack 8
P10 module schematic
2N3904
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Untitled
Abstract: No abstract text available
Text: & FEATU RES • 400-2000 MHz ■ 0.9 dB Insertion Loss ■ 60 dB Isolation ■ TTL Driver ■ Non-Reflective ■ .750 Sq. Flat Pack MODEL NO. DS0551 PIN Diode SPST “ 1” CO NTRO L GND GND SPST - 5V + 5V GND GND .xx = .02 .xxx = .010 ^ -.0 6 2 TYPICAL PERFORMANCE
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DS0551
z/1095
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C107 SCR
Abstract: scr C107 C107 C107D1 coffee vending machine circuit C107B4 C107D2 C107C2 C10701 SCR C107A1
Text: Silicon Controlled Rectifier Fiat Pack Design Model C107 Dp to 600 Volts 4 Amperes RMS PRODUCT FEA TU R ES o The Type C107 Silicon Controlled Rectifier (SCR) has the following outstanding featu res: o C107 TYPE 4 LOW COST Cl 07 TYPE 2 Designed for a variety of mount-down
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100C0912
Abstract: DA0098 DA0998 RF80
Text: FEA TU RES & • 2 0 - 3 0 0 MHz ■ 40 dB Linear Range Typical ■ ± 2 dB Linearity MODEL NO. DA0098 •if PIN Diode Linear VCA ■ 2 dB Insertion Loss ■ 14 Pin DIP ■ See DA0998 For Flat Pack Version VCA ■ See 100C0912 For Connectorized Version RF
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DA0998
100C0912
DA0098
20NAL
0Q023bb
DA0098
RF80
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scr C106
Abstract: c106 scr equivalent SCR c106 GE scr C106 GE C106F2 SCR C106Y1 CI06 SCR C106Y1 terminal SCR 406J C106B2
Text: Silicon Controlled Rectifier Flat Pack Design Model C106 Up to 600 Volts 4 Amperes RMS o PRO D U C T FEATURES The Type C106 Silicon Controlled Rectifier (SCR) has the following outstanding featu res: o Cl 06 TYPE 4 LOW COST Cl 06 TYPE 2 O perates directly fro m low signal
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X45-REF
scr C106
c106 scr
equivalent SCR c106
GE scr C106
GE C106F2
SCR C106Y1
CI06
SCR C106Y1 terminal
SCR 406J
C106B2
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Untitled
Abstract: No abstract text available
Text: SU R FA C E MOUNT G LA S S PA SSIV A TED SILJCION R EC TIFIER FLA T PACK PIV (P ea* Invers« Voltagal MAX A V G R e a iflea Current @ Half W a v e Res. Load 60 Hz MAX FWD PeaK Surge Current V -6 0 Hz Superimposed MAX Reverse Current @P!V Voltage @ 2? C T a
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BQT571b
3DT571L.
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Untitled
Abstract: No abstract text available
Text: 6-Pack IGBT 600 V 15 A FUJI IGBT MODULE L series Outline Drawings • F eatu res • H igh Sp e e d S w itch in g • L o w S a tu ra tio n V o lta g e • V oltage Drive ■ A p p lic a tio n s • In v e rte r fo r M o to r D rive • A C a n d D C S e rv o D rive A m p lifie r
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QDQS323
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Untitled
Abstract: No abstract text available
Text: Power Resistor S M P _ Q th ic k film ch ip ~ 1 w att K e y fe a tu re s • 1 watt at 70°C • small size to power ratio n • supplied on 7” reels • value marked on resistor • attractively priced • 500 volt maximum overload • 250 volt working voltage
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F0730
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Untitled
Abstract: No abstract text available
Text: TYPE KO A RSS R tU Ü L tD SiZE FIXED METAL OXIDE POWER RESISTOR - L T KSE T V P *# 0.280 0.098 ± 0.020 6.5 7.1 2.5 ± 0.5 0.335 0.374 0.118 ± 0.020 8.5 9.5 3.0 ± 0.5 0.472 0.570 0.157 ± 0.020 12.0 14.5 4.0 ± 0.5 0.610 0.709 0.236 ± 0.039 15.5 18.0 3
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A12L
Abstract: A13L CY7C09159 CY7C09169 HC 1815 FCD2
Text: fax id: 521 8 CYPRESS CY7C09159 CY7C09169 PRELIMINARY 8K/16K x 9 Synchronous Dual-Port Static RAM • H ig h-speed clo ck to d ata ac ce ss 6 .5 /7 .5 /1 2 ns m ax. Features • Low o p e ratin g p o w er • True D u al-P o rted m e m o ry cells w h ich allo w sim u lta
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CY7C09159
CY7C09169
8K/16K
CY7C09159)
CY7C09169)
100-MHz
35-micron
A12L
A13L
CY7C09169
HC 1815
FCD2
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A12L
Abstract: CY7C09349 CY7C09359
Text: fax id: 521 9 CYPRESS CY7C09349 CY7C09359 PRELIMINARY 4K/8K x 18 Synchronous Dual-Port Static RAM • H ig h-speed clo ck to d ata ac ce ss 6 .5 /7 .5 /1 2 ns m ax. Features • Low o p e ratin g p o w er • True D u al-P o rted m e m o ry cells w h ich allo w sim u lta
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CY7C09349
CY7C09359
CY7C09349)
CY7C09359)
100-MHz
35-micron
A12L
CY7C09359
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