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    RESISTOR 177 178 179 Search Results

    RESISTOR 177 178 179 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    AA1A4M-A Renesas Electronics Corporation Built-in Resistor Bipolar Transistors, , / Visit Renesas Electronics Corporation
    AA1A3Q-A Renesas Electronics Corporation Built-in Resistor Bipolar Transistors, , / Visit Renesas Electronics Corporation
    GA4L3Z(0)-T1-AT Renesas Electronics Corporation Built-in Resistor Bipolar Transistors Visit Renesas Electronics Corporation
    KA4F3R(0)-T1-A Renesas Electronics Corporation Built-in Resistor Bipolar Transistors Visit Renesas Electronics Corporation
    HD1A3M(0)-T1-AZ Renesas Electronics Corporation Built-in Resistor Bipolar Transistors Visit Renesas Electronics Corporation

    RESISTOR 177 178 179 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    AN1294

    Abstract: PD55035 PD55035S S2186
    Text: PD55035 PD55035S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 35 W with 16.9 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE PowerSO-10RF


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    PD55035 PD55035S PowerSO-10RF PD55035 PowerSO-10RF. AN1294 PD55035S S2186 PDF

    AN1294

    Abstract: PD55035 PD55035S
    Text: PD55035 PD55035S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 35 W with 16.9 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE


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    PD55035 PD55035S PowerSO-10RF PD55035 PowerSO-10RF. AN1294 PD55035S PDF

    Untitled

    Abstract: No abstract text available
    Text: PD55035 PD55035S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 35 W with 16.9 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE


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    PD55035 PD55035S PowerSO-10RF PD55035 PDF

    S2186

    Abstract: PD55035 PD55035S AN1294 731 smd C14500 transistor 0882
    Text: PD55035 PD55035S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 35 W with 16.9 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE PowerSO-10RF


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    PD55035 PD55035S PowerSO-10RF PD55035 PowerSO-10RF. S2186 PD55035S AN1294 731 smd C14500 transistor 0882 PDF

    AN1294

    Abstract: J-STD-020B PD55035-E PD55035S-E PD55035STR-E PD55035TR-E
    Text: PD55035-E PD55035S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 35 W with 16.9dB gain @ 500 MHz / 12.5 V ■ New RF plastic package


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    PD55035-E PD55035S-E PowerSO-10RF PowerSO10RF. AN1294 J-STD-020B PD55035-E PD55035S-E PD55035STR-E PD55035TR-E PDF

    Untitled

    Abstract: No abstract text available
    Text: PD55035-E PD55035S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 35 W with 16.9dB gain @ 500 MHz / 12.5 V ■ New RF plastic package


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    PD55035-E PD55035S-E PowerSO-10RF PDF

    PD55035-E

    Abstract: PD55035 PD55035S ST AN1294 PD55035S PD55035S-E PD55035STR-E PD55035TR-E C1162
    Text: PD55035-E PD55035S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 35W with 16.9dB gain @ 500MHz / 12.5V ■ New RF plastic package


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    PD55035-E PD55035S-E 500MHz PowerSO-10RF PD55035 PowerSO-10Rand PD55035-E PD55035S ST AN1294 PD55035S PD55035S-E PD55035STR-E PD55035TR-E C1162 PDF

    VK200 19 4B INDUCTOR

    Abstract: arco 462 capacitor capacitor 680 s12 diode VK200 4B inductor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power Field-Effect Transistor N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single


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    MRF275L VK200 19 4B INDUCTOR arco 462 capacitor capacitor 680 s12 diode VK200 4B inductor PDF

    SMD RESISTOR 177, 178, 179

    Abstract: No abstract text available
    Text: PD55025 PD55025S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 25 W with 14.5 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE


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    PD55025 PD55025S PowerSO-10RF. SMD RESISTOR 177, 178, 179 PDF

    DL110

    Abstract: VK200 20/4B inductor VK200 inductor of high frequencies AN211A MRF275L VK200 sony+IMX+179
    Text: Order this document by MRF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power Field-Effect Transistor N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single


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    MRF275L/D MRF275L DL110 VK200 20/4B inductor VK200 inductor of high frequencies AN211A MRF275L VK200 sony+IMX+179 PDF

    PD55025

    Abstract: AN1294 PD55025S
    Text: PD55025 PD55025S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 25 W with 14.5 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE PowerSO-10RF


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    PD55025 PD55025S PowerSO-10RF PD55025 PowerSO-10RF. AN1294 PD55025S PDF

    PD55025

    Abstract: AN1294 PD55025S
    Text: PD55025 PD55025S RF POWER TRANSISTORS The LdmoST Plastic FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 25 W with 14.5 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE


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    PD55025 PD55025S PowerSO-10RF PD55025 PowerSO-10RF. PD5502 AN1294 PD55025S PDF

    Untitled

    Abstract: No abstract text available
    Text: PD55025 PD55025S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 25 W with 14.5 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE


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    PD55025 PD55025S PowerSO-10RF PD55025 PDF

    UNELCO

    Abstract: S11 zener diode motorola MOSFET 935 AN211A MRF275L VK200 VK200 4B inductor
    Text: MOTOROLA Order this document by MRF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power Field-Effect Transistor N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single


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    MRF275L/D MRF275L UNELCO S11 zener diode motorola MOSFET 935 AN211A MRF275L VK200 VK200 4B inductor PDF

    PD55025

    Abstract: AN1294 PD55025S ep 1387 le520
    Text: PD55025 PD55025S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 25 W with 14.5 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE PowerSO-10RF


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    PD55025 PD55025S PowerSO-10RF PD55025 PowerSO-10RF. AN1294 PD55025S ep 1387 le520 PDF

    PD54003

    Abstract: PD54003S AN1294
    Text: PD54003 PD54003S RF POWER TRANSISTORS The LdmoST FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 3 W WITH 12 dB gain @ 500 MHz • NEW RF PLASTIC PACKAGE PowerSO-10RF formed lead


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    PD54003 PD54003S PowerSO-10RF PD54003 PowerSO-10RF. PD54003S AN1294 PDF

    702 TRANSISTOR smd

    Abstract: SU 179 702 Z smd TRANSISTOR electrolitic capacitor Hitano smd transistor w J 3 58 SMD Transistor z6 smd z5 transistor transistor 702 smd power transistor smd z9 AN1294
    Text: PD54003 PD54003S RF POWER TRANSISTORS The LdmoST FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 3 W WITH 12 dB gain @ 500 MHz • NEW RF PLASTIC PACKAGE PowerSO-10RF


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    PD54003 PD54003S PowerSO-10RF PD54003 PowerSO-10RF. 702 TRANSISTOR smd SU 179 702 Z smd TRANSISTOR electrolitic capacitor Hitano smd transistor w J 3 58 SMD Transistor z6 smd z5 transistor transistor 702 smd power transistor smd z9 AN1294 PDF

    SMD package mark code C9

    Abstract: PD55025 smd z5 transistor AN1294 PD55015STR-E PD55015TR-E PD55025-E PD55025S PD55025S-E
    Text: PD55025-E PD55025S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 25W with 14.5dB gain @ 500MHz / 12.5V ■ New RF plastic package


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    PD55025-E PD55025S-E 500MHz PowerSO-10RF PD55025 PowerSO-10RFand SMD package mark code C9 smd z5 transistor AN1294 PD55015STR-E PD55015TR-E PD55025-E PD55025S PD55025S-E PDF

    Untitled

    Abstract: No abstract text available
    Text: PD55025-E PD55025S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 25 W with 14.5dB gain @ 500 MHz / 12.5 V ■ New RF plastic package


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    PD55025-E PD55025S-E PowerSO-10RF PowerSO-10Ry PDF

    PD55025-E

    Abstract: PD55025 AN1294 J-STD-020B PD55015STR-E PD55015TR-E PD55025S-E RF Transistor s-parameter ST 0841
    Text: PD55025-E PD55025S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 25 W with 14.5dB gain @ 500 MHz / 12.5 V ■ New RF plastic package


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    PD55025-E PD55025S-E PowerSO-10RF PowerSO-10RF. PD55025-E PD55025 AN1294 J-STD-020B PD55015STR-E PD55015TR-E PD55025S-E RF Transistor s-parameter ST 0841 PDF

    SU 179 transistor

    Abstract: SU 179
    Text: MOTOROLA O rder this docum ent by M RF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power F ield -E ffect Transistor N-Channel Enhancement-Mode 1 0 0 W , 28 V, 500 MHz N -C H A N N E L BROADBAND RF POW ER FET Designed for broadband commercial and military applications using single


    OCR Scan
    RF275L/D SU 179 transistor SU 179 PDF

    sp 0937

    Abstract: VK200 inductor of high frequencies Nippon capacitors
    Text: MOTOROLA Order this document by MRF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power F ield -E ffect Transistor N-Channel Enhancement-Mode 100W , 28 V, 500 MHz N-CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single


    OCR Scan
    MRF275L/D MRF275L sp 0937 VK200 inductor of high frequencies Nippon capacitors PDF

    731 MOSFET

    Abstract: 511 MOSFET TRANSISTOR motorola Motorola AN211 VK200 20/4B inductor 0946 HC 039 E 31 motorola AN211 motorola MOSFET 935 MOTOROLA SEMICONDUCTOR 928 B 360 MRF275L
    Text: MOTOROLA O rder this docum ent by M RF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power F ield -E ffect Transistor N-Channel Enhancement-Mode 1 0 0 W , 28 V, 500 MHz N -C H A N N E L BROADBAND RF POW ER FET Designed for broadband commercial and military applications using single


    OCR Scan
    MRF275L/D MRF275L/D 731 MOSFET 511 MOSFET TRANSISTOR motorola Motorola AN211 VK200 20/4B inductor 0946 HC 039 E 31 motorola AN211 motorola MOSFET 935 MOTOROLA SEMICONDUCTOR 928 B 360 MRF275L PDF

    Mosfet J49

    Abstract: MRF171A equivalent SU 179 transistor motorola MRF171a PF 0849 B Nippon capacitors motorola transistor 912
    Text: MOTOROLA Order this document by MRF171A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF171A RF Power Field -E ffect Transistor N-Channel Enhancement-Mode MOSFET Designed primarily for wideband large-signal output and driver stages from 30-200 MHz. •


    OCR Scan
    MRF171A/D MRF171A Mosfet J49 MRF171A equivalent SU 179 transistor motorola MRF171a PF 0849 B Nippon capacitors motorola transistor 912 PDF