AN1294
Abstract: PD55035 PD55035S S2186
Text: PD55035 PD55035S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 35 W with 16.9 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE PowerSO-10RF
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PD55035
PD55035S
PowerSO-10RF
PD55035
PowerSO-10RF.
AN1294
PD55035S
S2186
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AN1294
Abstract: PD55035 PD55035S
Text: PD55035 PD55035S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 35 W with 16.9 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE
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Original
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PD55035
PD55035S
PowerSO-10RF
PD55035
PowerSO-10RF.
AN1294
PD55035S
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PDF
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Untitled
Abstract: No abstract text available
Text: PD55035 PD55035S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 35 W with 16.9 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE
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PD55035
PD55035S
PowerSO-10RF
PD55035
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S2186
Abstract: PD55035 PD55035S AN1294 731 smd C14500 transistor 0882
Text: PD55035 PD55035S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 35 W with 16.9 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE PowerSO-10RF
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Original
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PD55035
PD55035S
PowerSO-10RF
PD55035
PowerSO-10RF.
S2186
PD55035S
AN1294
731 smd
C14500
transistor 0882
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PDF
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AN1294
Abstract: J-STD-020B PD55035-E PD55035S-E PD55035STR-E PD55035TR-E
Text: PD55035-E PD55035S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 35 W with 16.9dB gain @ 500 MHz / 12.5 V ■ New RF plastic package
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Original
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PD55035-E
PD55035S-E
PowerSO-10RF
PowerSO10RF.
AN1294
J-STD-020B
PD55035-E
PD55035S-E
PD55035STR-E
PD55035TR-E
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PDF
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Untitled
Abstract: No abstract text available
Text: PD55035-E PD55035S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 35 W with 16.9dB gain @ 500 MHz / 12.5 V ■ New RF plastic package
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Original
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PD55035-E
PD55035S-E
PowerSO-10RF
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PDF
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PD55035-E
Abstract: PD55035 PD55035S ST AN1294 PD55035S PD55035S-E PD55035STR-E PD55035TR-E C1162
Text: PD55035-E PD55035S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 35W with 16.9dB gain @ 500MHz / 12.5V ■ New RF plastic package
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Original
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PD55035-E
PD55035S-E
500MHz
PowerSO-10RF
PD55035
PowerSO-10Rand
PD55035-E
PD55035S ST
AN1294
PD55035S
PD55035S-E
PD55035STR-E
PD55035TR-E
C1162
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PDF
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VK200 19 4B INDUCTOR
Abstract: arco 462 capacitor capacitor 680 s12 diode VK200 4B inductor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power Field-Effect Transistor N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single
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MRF275L
VK200 19 4B INDUCTOR
arco 462 capacitor
capacitor 680
s12 diode
VK200 4B inductor
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SMD RESISTOR 177, 178, 179
Abstract: No abstract text available
Text: PD55025 PD55025S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 25 W with 14.5 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE
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PD55025
PD55025S
PowerSO-10RF.
SMD RESISTOR 177, 178, 179
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DL110
Abstract: VK200 20/4B inductor VK200 inductor of high frequencies AN211A MRF275L VK200 sony+IMX+179
Text: Order this document by MRF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power Field-Effect Transistor N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single
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MRF275L/D
MRF275L
DL110
VK200 20/4B inductor
VK200 inductor of high frequencies
AN211A
MRF275L
VK200
sony+IMX+179
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PDF
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PD55025
Abstract: AN1294 PD55025S
Text: PD55025 PD55025S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 25 W with 14.5 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE PowerSO-10RF
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PD55025
PD55025S
PowerSO-10RF
PD55025
PowerSO-10RF.
AN1294
PD55025S
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PDF
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PD55025
Abstract: AN1294 PD55025S
Text: PD55025 PD55025S RF POWER TRANSISTORS The LdmoST Plastic FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 25 W with 14.5 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE
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Original
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PD55025
PD55025S
PowerSO-10RF
PD55025
PowerSO-10RF.
PD5502
AN1294
PD55025S
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PDF
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Untitled
Abstract: No abstract text available
Text: PD55025 PD55025S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 25 W with 14.5 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE
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PD55025
PD55025S
PowerSO-10RF
PD55025
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UNELCO
Abstract: S11 zener diode motorola MOSFET 935 AN211A MRF275L VK200 VK200 4B inductor
Text: MOTOROLA Order this document by MRF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power Field-Effect Transistor N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single
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MRF275L/D
MRF275L
UNELCO
S11 zener diode
motorola MOSFET 935
AN211A
MRF275L
VK200
VK200 4B inductor
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PDF
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PD55025
Abstract: AN1294 PD55025S ep 1387 le520
Text: PD55025 PD55025S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 25 W with 14.5 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE PowerSO-10RF
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Original
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PD55025
PD55025S
PowerSO-10RF
PD55025
PowerSO-10RF.
AN1294
PD55025S
ep 1387
le520
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PDF
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PD54003
Abstract: PD54003S AN1294
Text: PD54003 PD54003S RF POWER TRANSISTORS The LdmoST FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 3 W WITH 12 dB gain @ 500 MHz • NEW RF PLASTIC PACKAGE PowerSO-10RF formed lead
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PD54003
PD54003S
PowerSO-10RF
PD54003
PowerSO-10RF.
PD54003S
AN1294
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PDF
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702 TRANSISTOR smd
Abstract: SU 179 702 Z smd TRANSISTOR electrolitic capacitor Hitano smd transistor w J 3 58 SMD Transistor z6 smd z5 transistor transistor 702 smd power transistor smd z9 AN1294
Text: PD54003 PD54003S RF POWER TRANSISTORS The LdmoST FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 3 W WITH 12 dB gain @ 500 MHz • NEW RF PLASTIC PACKAGE PowerSO-10RF
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PD54003
PD54003S
PowerSO-10RF
PD54003
PowerSO-10RF.
702 TRANSISTOR smd
SU 179
702 Z smd TRANSISTOR
electrolitic capacitor Hitano
smd transistor w J 3 58
SMD Transistor z6
smd z5 transistor
transistor 702 smd power
transistor smd z9
AN1294
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PDF
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SMD package mark code C9
Abstract: PD55025 smd z5 transistor AN1294 PD55015STR-E PD55015TR-E PD55025-E PD55025S PD55025S-E
Text: PD55025-E PD55025S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 25W with 14.5dB gain @ 500MHz / 12.5V ■ New RF plastic package
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PD55025-E
PD55025S-E
500MHz
PowerSO-10RF
PD55025
PowerSO-10RFand
SMD package mark code C9
smd z5 transistor
AN1294
PD55015STR-E
PD55015TR-E
PD55025-E
PD55025S
PD55025S-E
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PDF
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Untitled
Abstract: No abstract text available
Text: PD55025-E PD55025S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 25 W with 14.5dB gain @ 500 MHz / 12.5 V ■ New RF plastic package
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Original
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PD55025-E
PD55025S-E
PowerSO-10RF
PowerSO-10Ry
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PDF
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PD55025-E
Abstract: PD55025 AN1294 J-STD-020B PD55015STR-E PD55015TR-E PD55025S-E RF Transistor s-parameter ST 0841
Text: PD55025-E PD55025S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 25 W with 14.5dB gain @ 500 MHz / 12.5 V ■ New RF plastic package
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Original
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PD55025-E
PD55025S-E
PowerSO-10RF
PowerSO-10RF.
PD55025-E
PD55025
AN1294
J-STD-020B
PD55015STR-E
PD55015TR-E
PD55025S-E
RF Transistor s-parameter
ST 0841
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PDF
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SU 179 transistor
Abstract: SU 179
Text: MOTOROLA O rder this docum ent by M RF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power F ield -E ffect Transistor N-Channel Enhancement-Mode 1 0 0 W , 28 V, 500 MHz N -C H A N N E L BROADBAND RF POW ER FET Designed for broadband commercial and military applications using single
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OCR Scan
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RF275L/D
SU 179 transistor
SU 179
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PDF
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sp 0937
Abstract: VK200 inductor of high frequencies Nippon capacitors
Text: MOTOROLA Order this document by MRF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power F ield -E ffect Transistor N-Channel Enhancement-Mode 100W , 28 V, 500 MHz N-CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single
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OCR Scan
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MRF275L/D
MRF275L
sp 0937
VK200 inductor of high frequencies
Nippon capacitors
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PDF
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731 MOSFET
Abstract: 511 MOSFET TRANSISTOR motorola Motorola AN211 VK200 20/4B inductor 0946 HC 039 E 31 motorola AN211 motorola MOSFET 935 MOTOROLA SEMICONDUCTOR 928 B 360 MRF275L
Text: MOTOROLA O rder this docum ent by M RF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power F ield -E ffect Transistor N-Channel Enhancement-Mode 1 0 0 W , 28 V, 500 MHz N -C H A N N E L BROADBAND RF POW ER FET Designed for broadband commercial and military applications using single
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OCR Scan
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MRF275L/D
MRF275L/D
731 MOSFET
511 MOSFET TRANSISTOR motorola
Motorola AN211
VK200 20/4B inductor
0946 HC
039 E 31 motorola
AN211
motorola MOSFET 935
MOTOROLA SEMICONDUCTOR 928 B 360
MRF275L
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PDF
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Mosfet J49
Abstract: MRF171A equivalent SU 179 transistor motorola MRF171a PF 0849 B Nippon capacitors motorola transistor 912
Text: MOTOROLA Order this document by MRF171A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF171A RF Power Field -E ffect Transistor N-Channel Enhancement-Mode MOSFET Designed primarily for wideband large-signal output and driver stages from 30-200 MHz. •
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OCR Scan
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MRF171A/D
MRF171A
Mosfet J49
MRF171A equivalent
SU 179 transistor
motorola MRF171a
PF 0849 B
Nippon capacitors
motorola transistor 912
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PDF
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