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    RESISTOR IN SIL Search Results

    RESISTOR IN SIL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74F433SPC Rochester Electronics LLC 74F433 - FIFO Visit Rochester Electronics LLC Buy
    74F403SPC Rochester Electronics LLC 74F403 - FIFO, 16X4, Synchronous, TTL, PDIP24 Visit Rochester Electronics LLC Buy
    CY7C429-20VC Rochester Electronics LLC CY7C429 - FIFO, 2KX9, 20ns, Asynchronous, CMOS, PDSO28 Visit Rochester Electronics LLC Buy
    CY7C4285-15ASC Rochester Electronics LLC CY7C4285 - 64K X 18 Deep Sync FIFO, Commercial Temp Visit Rochester Electronics LLC Buy
    AM7200-25JC Rochester Electronics LLC AM7200 - FIFO, 256X9, 25ns, Asynchronous, CMOS, PQCC32 Visit Rochester Electronics LLC Buy

    RESISTOR IN SIL Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    rt2n2

    Abstract: No abstract text available
    Text: RT2N26M COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm 2.1 RT2N26M is a composite transistor with built-in bias resistor 1.25 0.2 FEATURE ●Built-in bias resistor R2=10KΩ ①


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    RT2N26M RT2N26M SC-88A 25RTr1 rt2n2 PDF

    RT2N23M

    Abstract: No abstract text available
    Text: RT2N23M COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm 2.1 RT2N23M is a composite transistor with built-in bias resistor 1.25 0.2 FEATURE ●Built-in bias resistor R1=47 KΩ ①


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    RT2N23M RT2N23M PDF

    RT2P21M

    Abstract: No abstract text available
    Text: RT2P21M COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON PNP EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm 2.1 RT2P21M is a composite transistor with built-in bias resistor 1.25 0.2 FEATURE ●Built-in bias resistor R1=10 KΩ ①


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    RT2P21M RT2P21M 25RTr1RTr2 PDF

    RT2N21M

    Abstract: B05M
    Text: RT2N21M COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm 2.1 RT2N21M is a composite transistor with built-in bias resistor 1.25 0.2 FEATURE ●Built-in bias resistor R1=10 KΩ ①


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    RT2N21M RT2N21M B05M PDF

    RT2N20M

    Abstract: No abstract text available
    Text: RT2N20M COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm 2.1 RT2N20M is a composite transistor with built-in bias resistor 1.25 0.2 FEATURE ●Built-in bias resistor R1=4.7 KΩ ①


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    RT2N20M RT2N20M PDF

    RT2P20M

    Abstract: No abstract text available
    Text: RT2P20M COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON PNP EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm 2.1 RT2P20M is a composite transistor with built-in bias resistor 1.25 0.2 FEATURE ●Built-in bias resistor R1=4.7 KΩ ①


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    RT2P20M RT2P20M PDF

    Untitled

    Abstract: No abstract text available
    Text: RT2P02M COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON PNP EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm RT2P02M is a composite transistor with built-in bias resistor FEATURE ●Built-in bias resistor R1=4.7 KΩ , R2=4.7 KΩ


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    RT2P02M RT2P02M 25RTr1RTr2 PDF

    RT2N08M

    Abstract: No abstract text available
    Text: RT2N08M COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm 2.1 RT2N08M is a composite transistor with built-in bias resistor 1.25 0.2 FEATURE ●Built-in bias resistor R1=2.2 KΩ , R2=10KΩ


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    RT2N08M RT2N08M PDF

    RT2P09M

    Abstract: No abstract text available
    Text: RT2P09M COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON PNP EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm 2.1 RT2P09M is a composite transistor with built-in bias resistor 1.25 0.2 FEATURE ●Built-in bias resistor R1=2.2 KΩ , R2=47KΩ


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    RT2P09M RT2P09M JEITASC-88A PDF

    RT2N12M

    Abstract: No abstract text available
    Text: RT2N12M COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm 2.1 RT2N12M is a composite transistor with built-in bias resistor 1.25 0.2 FEATURE ●Built-in bias resistor R1=4.7 KΩ , R2=47KΩ


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    RT2N12M RT2N12M PDF

    RT2N09M

    Abstract: No abstract text available
    Text: RT2N09M COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm 2.1 RT2N09M is a composite transistor with built-in bias resistor 1.25 0.2 FEATURE ●Built-in bias resistor R1=2.2 KΩ , R2=47KΩ


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    RT2N09M RT2N09M PDF

    RT2P03M

    Abstract: rt2p03
    Text: RT2P03M COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON PNP EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm 2.1 RT2P03M is a composite transistor with built-in bias resistor 1.25 0.2 FEATURE ●Built-in bias resistor R1=10 KΩ , R2=10KΩ


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    RT2P03M RT2P03M rt2p03 PDF

    RT2N03M

    Abstract: No abstract text available
    Text: RT2N03M COMPOUND TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm 2.1 RT2N03M is a compound transistor with built-in bias resistor 1.25 0.2 FEATURE ●Built-in bias resistor R1=10 KΩ , R2=10KΩ


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    RT2N03M RT2N03M SC-88A PDF

    RT2N03M

    Abstract: rt2n03
    Text: RT2N03M COMPOUND TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm 2.1 RT2N03M is a compound transistor with built-in bias resistor 1.25 0.2 FEATURE ●Built-in bias resistor R1=10 KΩ , R2=10KΩ


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    RT2N03M RT2N03M SC-88A rt2n03 PDF

    R247k

    Abstract: RT2P12M rt2p12
    Text: RT2P12M COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON PNP EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm 2.1 RT2P12M is a composite transistor with built-in bias resistor 1.25 0.2 FEATURE ●Built-in bias resistor R1=4.7 KΩ , R2=47KΩ


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    RT2P12M RT2P12M JEITASC-88A R247k rt2p12 PDF

    RT2N05M

    Abstract: No abstract text available
    Text: RT2N05M COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm RT2N05M is a composite transistor with built-in bias resistor FEATURE ●Built-in bias resistor R1=47 KΩ , R2=47KΩ


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    RT2N05M RT2N05M 25RTr1RTr2 PDF

    RT2N14M

    Abstract: No abstract text available
    Text: RT2N14M COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm 2.1 RT2N14M is a composite transistor with built-in bias resistor 1.25 0.2 FEATURE ●Built-in bias resistor R1=10KΩ , R2=47KΩ


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    RT2N14M RT2N14M JEITASC-88A PDF

    RT2N18M

    Abstract: No abstract text available
    Text: RT2N18M COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm RT2N18M is a composite transistor with built-in bias resistor FEATURE ●Built-in bias resistor R1=1.0 KΩ ●Mini package for easy mounting


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    RT2N18M RT2N18M JEITASC-88A 25RTr1RTr2 PDF

    RT2N07M

    Abstract: No abstract text available
    Text: RT2N07M COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm 2.1 RT2N07M is a compos i t e transistor with built-in bias resistor 1.25 0.2 FEATURE ●Built-in bias resistor R1=1 KΩ , R2=10KΩ


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    RT2N07M RT2N07M PDF

    RT1N241

    Abstract: RT2N04M
    Text: RT2N04M COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm 2.1 RT2N04M is a compos i t etransistor with built-in bias resistor 1.25 0.2 FEATURE ●Built-in bias resistor R1=22 KΩ , R2=22KΩ


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    RT2N04M RT2N04M RT1N241 PDF

    RT2N07M

    Abstract: No abstract text available
    Text: RT2N07M COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm 2.1 RT2N07M is a compos i t e transistor with built-in bias resistor 1.25 0.2 FEATURE ●Built-in bias resistor R1=1 KΩ , R2=10KΩ


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    RT2N07M RT2N07M PDF

    z35s

    Abstract: RT2N05M
    Text: RT2N05M COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm 2.1 RT2N05M is a composite transistor with built-in bias resistor 1.25 0.2 FEATURE ●Built-in bias resistor R1=47 KΩ , R2=47KΩ


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    RT2N05M RT2N05M 25RTr1RTr2 z35s PDF

    RT1N241

    Abstract: RT2N04M
    Text: RT2N04M COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm 2.1 RT2N04M is a compos i t etransistor with built-in bias resistor 1.25 0.2 FEATURE ●Built-in bias resistor R1=22 KΩ , R2=22KΩ


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    RT2N04M RT2N04M RT1N241 PDF

    RT5N141C

    Abstract: RT5N141
    Text: RT5N141C Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit: mm RT5N141C is a one chip transistor with built-in bias 2.5 resistor. 0.5 1.5 0.5 ① ② 0.4 0.95 2.9 1.90 Built-in bias resistor (R1=10kΩ, R2=10kΩ)


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    RT5N141C RT5N141C SC-59 RT5N141 PDF