Untitled
Abstract: No abstract text available
Text: Integrated Resistor Lamps Reliability Data The following cumulative test results have been obtained from testing performed at HP Optoelectronics Division in accordance with the latest revision of MIL-STD-883. T-1 and T-1 3/4 Lamps, 5 V and 12 V Series. Subminiature Lamps
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MIL-STD-883.
5965-7733E
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pwm schematic inverter
Abstract: water pumping machine control schematic TRANSISTOR towers inverter schematic Power INVERTER schematic circuit schematic PWM inverter
Text: APPLICATION NOTE CRA2512 Industrial Controls Use of the Low Ohmic Resistor CRA2512 in Inverter Drives T he 3 phase inverters are used in variable speed control applications. They can be found in a wide spectrum of automated controls including paper machines, presses, fans in cooling towers,
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CRA2512
CRA2512
e/N0804
pwm schematic inverter
water pumping machine control schematic
TRANSISTOR towers
inverter schematic
Power INVERTER schematic circuit
schematic PWM inverter
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NT1004
Abstract: Ablestik 84-1LMIT1 120C 155C 84-1LMIT1 DC-10 SNA-100 SNA-176 DB266
Text: Product Description SNA-100 Stanford Microdevices’ SNA-100 is a GaAs monolithic broadband amplifier MMIC in die form. This amplifier provides 12dB of gain when biased at 50mA and 4V. External DC decoupling capacitors determine low frequency response. The use of an external resistor allows for bias
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SNA-100
SNA-100
DC-10
SNA-176,
84-1LMIT1
NT1004
Ablestik 84-1LMIT1
120C
155C
SNA-176
DB266
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NT 407 F transistor
Abstract: SNA-376 nt 407 f 100C 120C 135C 155C 84-1LMIT1 SNA-300
Text: Product Description SNA-300 Stanford Microdevices’ SNA-300 is a GaAs monolithic broadband amplifier MMIC in die form. This amplifier provides 22dB of gain when biased at 35mA and 4V. External DC decoupling capacitors determine low frequency response. The use of an external resistor allows for bias
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SNA-300
SNA-300
SNA-376,
11the
84-1LMIT1
NT 407 F transistor
SNA-376
nt 407 f
100C
120C
135C
155C
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Ablestik 84-1LMIT1
Abstract: 120C 155C 84-1LMIT1 SNA-200 SNA-276
Text: Product Description SNA-200 Stanford Microdevices’ SNA-200 is a GaAs monolithic broadband amplifier MMIC in die form. This amplifier provides 16dB of gain when biased at 50mA and 4V. External DC decoupling capacitors determine low frequency response. The use of an external resistor allows for bias
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SNA-200
SNA-200
SNA-276,
84-1LMIT1
Ablestik 84-1LMIT1
120C
155C
SNA-276
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SNA-38
Abstract: No abstract text available
Text: 15 Stanford Microdevices Product Description SNA-386 Stanford Microdevices’ SNA-386 is a GaAs monolithic broadband amplifier MMIC housed in a low-cost surfacemountable plastic package. This amplifier provides 21dB of gain when biased at 35mA and 4V. The use of an external resistor allows for bias flexibility and
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SNA-386
SNA-300)
SNA-386
SNA-38
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Untitled
Abstract: No abstract text available
Text: Remote I/O system excom 8 channel digital input/output module DM80EX The input/output module DM80Ex is used for the connection of NAMUR sensors DIN EN 60 947-5-6 and actuators. If mechanical contacts are connected, it is required to implement a resistor circuitry (WM1, Ident no.
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DM80EX
DM80Ex
2013-07-13T19
D-45472
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Untitled
Abstract: No abstract text available
Text: EIC1010-4 10.00-10.70 GHz 4-Watt Internally Matched Power FET UPDATED 02/15/2005 FEATURES • • • • • • • • .650±.008 .512 .004 .129 Id1dB IM3 RTH VDS = 3 V, IDS = 20 mA 3 Thermal Resistance 1 Tested with 100 Ohm gate resistor. 2) S.C.L. = Single Carrier Level.
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EIC1010-4
70GHz
1100mA
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Untitled
Abstract: No abstract text available
Text: Product Description SNA-300 Stanford M icrodevices’ SNA-300 is a GaAs m onolithic broad band am plifier MMIC in die form. This am plifier provides 22dB of gain when biased at 35m A and 4V. External DC decoupling capacitors determ ine low frequency response. The use of an external resistor allow s for bias
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SNA-300
SNA-300
SNA-376,
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chn 610
Abstract: No abstract text available
Text: PRECISION BULK METAL FOIL “ TE CHN OL OG Y “ GLOSSARY a c o m p a n y V I S H A of Y VISHAY RESISTORS ACCURACY: The degree to which the measured value of resistance approximates the specified value of resistance. This is normally expressed in percent deviation but in precision resistor work, the percent is often so small that the results are
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Untitled
Abstract: No abstract text available
Text: PKF 4910A I DC/DC power modules 3.3V/3A /9.9 W • SMD and through-hole versions with ultra low component height 8.0 mm 0.315 in. • 78% efficiency • 1,500 Vdc isolation voltage • Switching frequency syncronization • MTTF >10 million hours at +50°C case
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SE-126
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pkf 4910a
Abstract: No abstract text available
Text: PKF 4910A I DC/DC power modules 3.3V/3A /9.9 W • SMD and through-hole versions with ultra low component height 8.0 mm 0.315 in. • 78% efficiency • 1,500 Vdc isolation voltage • Switching frequency syncronization • MTTF >10 million hours at +50°C case
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SE-164
pkf 4910a
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Untitled
Abstract: No abstract text available
Text: PKF 4610A I DC/DC power modules 3.3 V/2 A /6.6 W • SMD and through-hole versions with ultra low component height 8.0 mm 0.315 in. • 78% efficiency • 1,500 Vdc isolation voltage • Switching frequency syncronization • MTTF >10 million hours at +50°C
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SE-164
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Untitled
Abstract: No abstract text available
Text: PKF 4111A I DC/DC power modules 5 V/ 2 A /10W • SMD and through-hole versions with ultra low component height 8.0 mm 0.315 in. • 83% efficiency • 1,500 Vdc isolation voltage • Switching frequency syncronization • MTTF >10 million hours at +50°C
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60VDC
SE-164
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Untitled
Abstract: No abstract text available
Text: PKF 4111A I DC/DC power modules 5 V/ 2 A /10W • SMD and through-hole versions with ultra low component height 8.0 mm 0.315 in. • 83% efficiency • 1,500 Vdc isolation voltage • Switching frequency syncronization • MTTF >10 million hours at +50°C
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60VDC
SE-164
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FP1189
Abstract: 8893 application diagram
Text: FP1189 ½ - Watt HFET Product Information Product Features • • • • • • • • Product Description 50 – 4000 MHz ISO & EPC compliant +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz MTTF >100 Years SOT-89 SMT Package
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FP1189
OT-89
FP1189
1-800-WJ1-4401
8893 application diagram
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cx 1213 circuit diagram
Abstract: No abstract text available
Text: AH103 The Communications Edge TM High Gain, High Linearity ½ Watt Amplifier Product Features • • • • • • • Product Description The device conforms to WJ Communications’ long history of producing high reliability and quality components. The AH103 has an associated MTTF of
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AH103
AH103
1-800-WJ1-4401
cx 1213 circuit diagram
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Untitled
Abstract: No abstract text available
Text: FP1189 ½-Watt HFET Product Features Product Description Functional Diagram 50 – 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package • MTTF >100 Years The FP1189 is a high performance ½-Watt HFET
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FP1189
OT-89
FP1189
1-800-WJ1-4401
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FP11G
Abstract: fp1189-g rfid reader id-20 FP1189 FP1189-PCB1900S FP1189-PCB2140S FP1189-PCB900S TRANSISTOR BC 206 PNP
Text: FP1189 ½-Watt HFET Product Features • • • • • • 50 – 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package • MTTF >100 Years Functional Diagram The FP1189 is a high performance ½-Watt HFET
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FP1189
FP1189
OT-89
1-800-WJ1-4401
FP11G
fp1189-g
rfid reader id-20
FP1189-PCB1900S
FP1189-PCB2140S
FP1189-PCB900S
TRANSISTOR BC 206 PNP
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FP11G
Abstract: TRANSISTOR BC 158 pnp WJ transistor bc 206 transistor bc 3843
Text: FP1189 ½-Watt HFET Product Features • • • • • • 50 – 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package • MTTF >100 Years Functional Diagram The FP1189 is a high performance ½-Watt HFET
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FP1189
OT-89
FP1189
1-800-WJ1-4401
FP11G
TRANSISTOR BC 158 pnp
WJ transistor
bc 206 transistor
bc 3843
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MARKING S0 sot89
Abstract: bc 3843 sot-89 marking dn
Text: FP1189 The Communications Edge TM Product Information ½-Watt HFET Product Features x x x x x x 50 – 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package x MTTF >100 Years Functional Diagram
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FP1189
OT-89
FP1189
1-800-WJ1-4401
MARKING S0 sot89
bc 3843
sot-89 marking dn
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3000 watt power amplifier circuit diagram
Abstract: No abstract text available
Text: AH103 The Communications Edge TM High Gain, High Linearity ½ Watt Amplifier Product Features • • • • • • • 700 – 2200 MHz +27 dBm P1dB +46 dBm Output IP3 29 dB Gain @ 900 MHz Excellent ACPR MTTF > 100 Years SOIC-8 Pkg w/ heat slug Advanced Product Information
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AH103
AH103
1-800-WJ1-4401
3000 watt power amplifier circuit diagram
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marking 08 sot89
Abstract: SOT89 MARKING CODE 8G
Text: FP1189 The Communications Edge TM Product Information ½-Watt HFET Product Features x x x x x x 50 – 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package x MTTF >100 Years Functional Diagram
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FP1189
OT-89
FP1189
1-800-WJ1-4401
marking 08 sot89
SOT89 MARKING CODE 8G
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WJ 3
Abstract: No abstract text available
Text: FP1189 The Communications Edge TM ½-Watt HFET Product Information Product Features • • • • • • 50 – 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package • MTTF >100 Years
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FP1189
OT-89
FP1189
1-800-WJ1-4401
WJ 3
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