Wire wound resistor 5W
Abstract: KNP-100 KNP-02 300SS KNP 5W Red led 3w 2w knp wire wound resistor KNP-1W ordering code KNP-200s 100S
Text: SYNTON-TECH CORPORATION WIRE WOUND RESISTORS File No. : Version : Page : Date : KNP-02 C 1/10 2003.01.01 1. INTRODUCTION ! To wind the alkalineless ceramic core with metal alloy resistance wire and coating with silicon resin which makes wire wound resistor KNP series
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KNP-02
JIS-C-5202
Wire wound resistor 5W
KNP-100
KNP-02
300SS
KNP 5W
Red led 3w
2w knp wire wound resistor
KNP-1W ordering code
KNP-200s
100S
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UAF42
Abstract: UAF 41 resistor 0.22 Volvi uaf41 uch41
Text: U A F 42 U A F 41 U A F 4 2 (U A F 4 1 ) V a ria b le -m u diode-pentode Fig. 1 The U A F 42, show ing the electrode system (approxim ately actual size). The UAF 42 is a variable-mu diode-pentode for A.C./D.C. receivers having a heater circuit carrying 100 mA. The pentode section is intended for use
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BQ77910
Abstract: No abstract text available
Text: User's Guide SLUU368 – February 2011 bq77910EVM The bq77910EVM-001 evaluation module EVM is a complete evaluation system for the bq77910, a fourto ten-cell Li-ion battery protection integrated circuit. The EVM consists of a bq77910 circuit module and a
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SLUU368
bq77910EVM
bq77910EVM-001
bq77910
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POA11
Abstract: SI002 ADC04 H213 LCD03 marking CODE ck6 TMR02-0 ADC82 stp10
Text: W m*M MICROEL ECT RONI CS Exc»ll»nc8 in E* XL24805 Series 4-Bit Microcontroller KEY FEATURES OVERVIEW Cost-effective 4-bit microcontroller CMOS process for low current drain Low voltage, single power supply — VDD-2.0~5.5V 8192 X 8 bits ROM 256 x 4 bits general-purpose RAM
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XL24805
300KHz-2MHz
30KHz
50KHz
10jiA
30jiA
XL24805DS
POA11
SI002
ADC04
H213
LCD03
marking CODE ck6
TMR02-0
ADC82
stp10
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541 transistor
Abstract: LM311V
Text: LRGAT75F100 1000V 75A ADVANCED R ow er LRGAT150F100 1000V 150A T e c h n o l o g y ZVSTHYRISTOR DUAL MODE IGBT HALF BRIDGE POWER MODULE PRODUCT DESCRIPTION The LRGAT series consists of half bridges designed to be used in Zero Voltage Switching ZVS power
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LRGAT75F100
LRGAT150F100
80KHz
400VAC
6160xx1T2300
DIN46
F-33700
541 transistor
LM311V
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sch 5127
Abstract: top 2556 en
Text: fü HARRIS H A S E M I C O N D U C T O R - 2 5 5 7 130MHz, F o u r Q u a d ra n t, C u rre n t O u tp u t A n a lo g M u ltip lie r N ovem ber 1996 F ea tu res Description • L o w Multiplication Error . . . . . . . 1 .5 % • I n p u t B i a s C u r r e n t s .
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130MHz,
130MHz
HA-2557
sch 5127
top 2556 en
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calmRISC
Abstract: MIP 2112 Calm16 CalmRISC-16
Text: S3CC11B/FC11B CalmRISC 16-Bit CMOS MICROCONTROLLER USER'S MANUAL Revision 1.1 Important Notice The information in this publication has been carefully checked and is believed to be entirely accurate at the time of publication. Samsung assumes no responsibility, however, for possible errors or
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S3CC11B/FC11B
16-Bit
calmRISC
MIP 2112
Calm16
CalmRISC-16
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mp9141
Abstract: S3FC11B calmRISC16 RP2D1 MP2338 ISO-14001 ADCON10 sd2150 CalmRISC-16 MAC2424
Text: S3CC11B/FC11B CalmRISC 16-Bit CMOS MICROCONTROLLER USER'S MANUAL Revision 1.20 Important Notice The information in this publication has been carefully checked and is believed to be entirely accurate at the time of publication. Samsung assumes no responsibility, however, for possible errors or
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S3CC11B/FC11B
16-Bit
mp9141
S3FC11B
calmRISC16
RP2D1
MP2338
ISO-14001
ADCON10
sd2150
CalmRISC-16
MAC2424
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transistor c1419
Abstract: transistor C1162 equivalent of transistor c4751 c1162 transistor npn c1008 C1449 transistor intel 945 motherboard schematic diagram c1419 transistor c1295 battery transistor c1394
Text: Intel Xeon Processor with 512 KB L2 Cache and Intel® E7500 Chipset Platform Design Guide March 2002 Document Number: 298649-002 Information in this document is provided in connection with Intel® products. No license, express or implied, by estoppel or otherwise, to any
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E7500
CK408B
GPIO27
GPIO28
transistor c1419
transistor C1162
equivalent of transistor c4751
c1162 transistor
npn c1008
C1449 transistor
intel 945 motherboard schematic diagram
c1419 transistor
c1295 battery
transistor c1394
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LH0002 equivalent
Abstract: LH0002 LH0033 equivalent lh002 6002b IC LM741 6A diode Transistor TL 31 AC datasheet a 6002b op amp transistor current booster circuit LH0033
Text: National Semiconductor Application Note 227 October 1979 INTRODUCTION The LH0002 LH0033 and LH0063 are wide-band high current unity gain buffer amplifiers They are intended for use alone or in closed-loop combination with op amps to drive co-axial cables and capacitive or other high-current loads
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LH0002
LH0033
LH0063
LH0002 equivalent
LH0033 equivalent
lh002
6002b
IC LM741 6A diode
Transistor TL 31 AC
datasheet a 6002b
op amp transistor current booster circuit
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LH0002
Abstract: LH0002 equivalent digital clock using lm741 LH0063 LM741 audio amplifiers LH0032 LH0033 AN227 AN-227 AN-227 national
Text: National Semiconductor Application Note 227 October 1, 1979 INTRODUCTION The LH0002, LH0033 and LH0063 are wide-band, high current, unity gain buffer amplifiers. They are intended for use alone or in closed-loop combination with op amps to drive coaxial cables and capacitive or other high-current loads. Features and characteristics of these buffers are summarized in
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LH0002,
LH0033
LH0063
AN-227
LH0002
LH0002 equivalent
digital clock using lm741
LM741 audio amplifiers
LH0032
AN227
AN-227
AN-227 national
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2SA1178
Abstract: electret condenser microphone preamplifier ru4f microphone amplifier with alc nec 620D 2SA608 LA4583M M200 tuner filter variable capacitor
Text: Ordering num ber:E N 3679 M onolithic Linear 1C L A 4583 ÌVI No. 3679 SAHYO I Compact Cassette Stereo Recording and Playback System OVERVIEW Pin Assignment The LA4583M is a complete recording and playback system for compact cassette units. It incorporates micro
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EN3679
LA4583M
LA4583M
44-pin
2SA1178
electret condenser microphone preamplifier
ru4f
microphone amplifier with alc
nec 620D
2SA608
M200
tuner filter variable capacitor
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SLLB120100
Abstract: SLLB310400 SLLB120
Text: Multi Control Devices Lever and Push Operation Type Switch SLLB Series Car Use RoHS applicable A small,horizontal type with a thin shape,which is applicable for a wide range of uses. Features Detector ● Push ● Slide ● Rotary The control unit provides both momentary operation by lever and
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SLLQ11
SLLQ12
SLLB120100
SLLB310400
SLLB120
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D1N4148
Abstract: IN4148 SC1211VX SC1211VXSTR SC2643 SC2643VX
Text: SC1211VX High Speed, Combi-SenseTM, Synchronous MOSFET Driver for Mobile Applications POWER MANAGEMENT Description Features u u u u The SC1211VX is a high speed, Combi-SenseTM, dual output driver designed to drive high-side and low-side MOSFETs in a synchronous Buck converter. These
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SC1211VX
SC1211VX
SC2643VX
SC2643,
D1N4148
IN4148
SC1211VXSTR
SC2643
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TO71
Abstract: uPD780921 uPD780922 uPD780923 uPD780924 uPD780961 uPD780962 uPD780963 uPD780964 uPD78F0924
Text: mPD780924, 780964 SUBSERIES 8-BIT SINGLE-CHIP MICROCONTROLLER PRELIMINARY m PD780921 m PD780922 m PD780923 m PD780924 m PD78F0924 1997 m PD780961 m PD780962 m PD780963 m PD780964 m PD78F0964 Document No. U12071EJ1V0UM00 (1st edition) Date Published January 1997 N
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mPD780924,
PD780921
PD780922
PD780923
PD780924
PD78F0924
PD780961
PD780962
PD780963
PD780964
TO71
uPD780921
uPD780922
uPD780923
uPD780924
uPD780961
uPD780962
uPD780963
uPD780964
uPD78F0924
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QP12W05S-37
Abstract: DC/DC Converter Mornsun mornsun-power
Text: QP12W05S-37 Hybrid Integrated IGBT Driver QP12W05S-37 is a hybrid integrated IGBT driver designed for driving IGBT modules. This device is a fully isolated gate drive circuit consisting of an optimally isolated gate drive amplifier and an isolated DC-to-DC
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QP12W05S-37
QP12W05S-37
30kV/Â
15kV/Â
150ohm
150ohm
QP12W
05S-37
B/0-2012
DC/DC Converter
Mornsun
mornsun-power
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QP12W05S-37A
Abstract: DC/DC Converter Mornsun mornsun-power
Text: QP12W05S-37A Hybrid Integrated IGBT Driver QP12W05S-37A is a hybrid integrated IGBT driver designed for driving IGBT modules. This device is a fully isolated gate drive circuit consisting of an optimally isolated gate drive amplifier and an isolated DC-to-DC
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QP12W05S-37A
QP12W05S-37A
30kV/Â
15kV/Â
150ohm
150ohm
DC/DC Converter
Mornsun
mornsun-power
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IS22C020P
Abstract: IS22C020S IS22C020X
Text: ISSI IS22C120 16 to 20 SEC VOICE ROM ADVANCE INFORMATION SEPTEMBER 1997 FEATURES • Voice length at: - 8 KHz sampling is 16 seconds - 6 KHz sampling is 20 seconds • Silence compression saves memory • Four trigger pins, S1 to S4 for eight sections • SBT pin play-all or sequential play-all
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IS22C120_
IS22C120
vp004-0e
IS22C120
IS22C020X
IS22C020P
300-mil
IS22C020S
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rg 701 cl01
Abstract: ITT Semiconductors
Text: PRELIMINARY PRODUCT INFORMATION MOS INTEGRATED CIRCUIT ¿¿PD780921, 780922, 780923, 780924 8-BIT SINGLE-CHIP MICROCONTROLLER The |iPD780921, 780922, 780923, and 780924, which are members of the nPD780924 subseries of the 78K/0 series, are suited to control general-purpose inverters.
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uPD780921
uPD780922
uPD780923
uPD780924
iPD780921,
nPD780924
78K/0
iPD78014
PD78018F
jiPD780924
rg 701 cl01
ITT Semiconductors
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Untitled
Abstract: No abstract text available
Text: ISSI IS22C120 16 to 20 SEC VOICE ROM ADVANCE INFORMATION SEPTEMBER 1997 FEATURES • Voice length at: - 8 KHz sampling is 16 seconds - 6 KHz sampling is 20 seconds • Silence compression saves memory • Four trigger pins, S1 to S4 for eight sections • SBT pin play-all or sequential play-all
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IS22C120
VP004-0E
IS22C020X
IS22C020P
300-mil
IS22C020S
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philips tea charger 14 pin
Abstract: SMPS battery tea1100 555 timer smps basic transistor 9014 TEA1100 philips tea charger 16 pin CAR SMPS dioda zener type BE 84 s09c TEA1100T
Text: 2 - ^ 5 - l k ' 0 INTEGRATEDCIRCUITS Lnu r~ i— L TEA1100; TEA1100T Battery monitor for NiCd and NiMH chargers Preliminary specification M ay 1992 File under Integrated Circuits, IC03 Philips Semiconductors PH1UP* PHILIPS P relim in ary s œ c lflc a t lo n
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11H1IET.
TEA1100;
TEA1100T
TEA11Q0;
philips tea charger 14 pin
SMPS battery tea1100
555 timer smps
basic transistor 9014
TEA1100
philips tea charger 16 pin
CAR SMPS
dioda zener type BE 84
s09c
TEA1100T
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SECI resistor
Abstract: No abstract text available
Text: JRC NJU92Q7B P R E L I Ml N A R Y 3 - 1 / 2 D I G I T S I N G L E C H I P D I G I T A L M U L T I M E T E R LSI PACKAGE OUTLINE GENERAL DESCRIPTION The NJU9207B is 3*1/2 digit single chip digitai multi meter LSI with auto-ranging function containing 3*1/2
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NJU92Q7B
NJU9207B
NJU9207BF
NJU9207B
DG200mV
9207B
50ppm.
768kHz,
SECI resistor
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LTM8061-4
Abstract: E7 Charging circuit diagram schematic diagram converter 12v to 24v LTM8061 LTM8061-8 GRM155R61A684KE15D LRC1206-01-R LTM 8061 ps2 CIRCUIT diagram OPT0805
Text: DEMO MANUAL DC1645A-A/DC1645A-B/ DC1645A-C/DC1645A-D LTM8061-4.1/LTM8061-4.2/ LTM8061-8.2/LTM8061.4 32V, 2A µModule Li-Ion Battery Charger DESCRIPTION Demonstration circuits 1645A-A, 1645A-B, 1645A-C and 1645A-D feature the LTM8061, a 32V, 2A Module Li-Ion
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DC1645A-A/DC1645A-B/
DC1645A-C/DC1645A-D
LTM8061-4
1/LTM8061-4
LTM8061-8
2/LTM8061
645A-A,
645A-B,
645A-C
645A-D
E7 Charging circuit diagram
schematic diagram converter 12v to 24v
LTM8061
GRM155R61A684KE15D
LRC1206-01-R
LTM 8061
ps2 CIRCUIT diagram
OPT0805
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NJU920
Abstract: block diagram of multimeter au3a 6 DIGIT SINGLE CHIP DIGITAL MULTIMETER NJU9207BF digital multimeter with lcd -block diagram SECI resistor 5 DIGIT SINGLE CHIP DIGITAL MULTIMETER "Piezo Buzzer" 5v fci dh 22
Text: NJU9207B P R E L I M I N A R Y 3 - 1/2 D I G IT SI NG LE CHIP D I G I T A L M U L T I M E T E R LSI PACKAGE OUTLINE GENERAL DESCRIPTION The NJU9207B is 3*1/2 digit single chip digital multi meter LSI with auto-ranging function containing 3*1/2 digit dual-siope A/D converter, voltage reference, con
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NJU92Q7B
NJU9207B
NJU9207BF
200mA
9207bf
SEG10
50ppm.
768kHz,
NJU920
block diagram of multimeter
au3a
6 DIGIT SINGLE CHIP DIGITAL MULTIMETER
NJU9207BF
digital multimeter with lcd -block diagram
SECI resistor
5 DIGIT SINGLE CHIP DIGITAL MULTIMETER
"Piezo Buzzer" 5v
fci dh 22
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