Untitled
Abstract: No abstract text available
Text: White Paper: RF MEMS Switch: What You Need to Know Structure and Usage of OMRON MEMS Switch 2SMES-01 MEMS RF Switch Type: 2SMES-01 White Paper: 2SMES-01 MEMS RF Switch 1 Outline In this application note, the basic operation principle and driving method for OMRON’s MEMS switch
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2SMES-01
2SMES-01
2SMES-01)
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RMSW101
Abstract: RMSW221
Text: Radant MEMS RF MEMS Switches and Products The Most Reliable MEMS Switches 2012-2013 RF Gn d RF Out Gat e RF 255 Hudson Road Stow, MA 01775 Tel: 978.562.3866 Fax: 978.562.6277 E-mail: [email protected] www.radantmems.com 1/4/2013 Gn d RF In Gat e 1 2 2 TABLE OF CONTENTS
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RMSW100HP,
RMSW101,
RMSW200HP,
RMSW201,
RMSW220HP,
RMSW221,
RMSW240,
RMDR1000
RMSW101
RMSW221
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Untitled
Abstract: No abstract text available
Text: All rights reserved 2013 OMMIC Fabrication de MMIC Intégrant des MEMS RF Brice GRANDCHAMP [email protected] RF MEMS workshop, Microwave & RF salon, Paris, April 2013 Plan OMMIC technologies Development of MEMS at OMMIC All rights reserved © 2013 OMMIC
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ED02AH
D01PH
D01MH
D007IH
100Hz
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rf mems switch
Abstract: 2SMES-01 MEMS SWITCH mems rf mems LGA-12
Text: RF MEMS Switch Omron Electronic Components: The Quality, Flexibility and Global Support You Need RF Switch Based on MEMS Technology Omron leads the world in advanced relay production and quality, assuring reliable performance, and ready stock wherever you manufacture. With 75
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10GHz
12GHz
100mA
30dBm
36dBm
rf mems switch
2SMES-01
MEMS SWITCH
mems
rf mems
LGA-12
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rf mems switch
Abstract: full automatic Washing machines circuit diagram 2SMES-01-EVBA at10GHz
Text: RF MEMS Switch 2SMES-01 Surface-mount ,10GHz Band typical , Miniature, SPDT - NO, RF MEMS Switch • Superior high-frequency characteristics at 10 GHz typical / 8 GHz rated (50Ω) Isolation of 30 dB Insertion loss of 1dB ■ Ultra-miniature 5.2x3.0×1.8 mm (L×W×H).
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2SMES-01
10GHz
100million
rf mems switch
full automatic Washing machines circuit diagram
2SMES-01-EVBA
at10GHz
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rf mems switch
Abstract: 2SMES-01 MEMS SWITCH 2SMES-01-EVBA 4350B rf mems
Text: RF MEMS Switch 2SMES-01 Miniature, 10 GHz Band typical SPDT (transfer contacts) RF MEMS Switch • Superior high-frequency characteristics at 10 GHz typical/8 GHz rated (50 Ω) ➜ Isolation of 30 dB ➜ Insertion loss of 1 dB • Ultra-miniature 5.2 x 3.0 x 1.8 mm (L x W x H).
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2SMES-01
X302-E-1
rf mems switch
2SMES-01
MEMS SWITCH
2SMES-01-EVBA
4350B
rf mems
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rf mems switch
Abstract: automatic transfer switch circuit diagram MEMS SWITCH 2SMES-01-EVBA rf mems 2SMES-01 N5230 4350B structure MEMS IC
Text: RF MEMS Switch 2SMES-01 Miniature, 10 GHz Band typical SPDT (transfer contacts) RF MEMS Switch • Superior high-frequency characteristics at 10 GHz typical/8 GHz rated (50 Ω) ➜ Isolation of 30 dB ➜ Insertion loss of 1 dB • Ultra-miniature 5.2 x 3.0 x 1.8 mm (L x W x H).
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2SMES-01
X302-E-1
rf mems switch
automatic transfer switch circuit diagram
MEMS SWITCH
2SMES-01-EVBA
rf mems
2SMES-01
N5230
4350B
structure MEMS IC
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2SMES-01-EVBA
Abstract: No abstract text available
Text: RF MEMS Switch 2SMES-01 Miniature, 10 GHz Band typical SPDT (transfer contacts) RF MEMS Switch • Superior high-frequency characteristics at 10 GHz typical/8 GHz rated (50 Ω) ➜ Isolation of 30 dB ➜ Insertion loss of 1 dB • Ultra-miniature 5.2 x 3.0 x 1.8 mm (L x W x H).
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2SMES-01
2SMES-01
2SMES-01CT
A178-E-01
2SMES-01-EVBA
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rf mems switch
Abstract: 2SMES-01-EVBA automatic transfer switch circuit diagram rf mems switch using Power Handling Rogers 4350B substrate
Text: RF MEMS Switch 2SMES-01 Miniature, 10 GHz Band typical SPDT (transfer contacts) RF MEMS Switch • Superior high-frequency characteristics at 10 GHz typical/8 GHz rated (50 Ω) ➜ Isolation of 30 dB ➜ Insertion loss of 1 dB • Ultra-miniature 5.2 x 3.0 x 1.8 mm (L x W x H).
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2SMES-01
2SMES-01
2SMES-01CT
X301-E-1b
rf mems switch
2SMES-01-EVBA
automatic transfer switch circuit diagram
rf mems switch using Power Handling
Rogers 4350B substrate
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Untitled
Abstract: No abstract text available
Text: RF MEMS Switch 2SMES-01 Miniature, 10 GHz Band typical SPDT (transfer contacts) RF MEMS Switch • Superior high-frequency characteristics at 10 GHz typical/8 GHz rated (50 Ω) ➜ Isolation of 30 dB ➜ Insertion loss of 1 dB • Ultra-miniature 5.2 x 3.0 x 1.8 mm (L x W x H).
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2SMES-01
2SMES-01
X301-E-1b
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DKM812
Abstract: No abstract text available
Text: PRELIMINARY SPDT MEMS DKM812 SWITCH DESCRIPTION The DKM812 is a Single Pole Double-Throw SPDT Reflective RF switch that utilizes breakthrough MEMS technology to provide extremely low insertion loss, high linearity, and high isolation in a compact chip-scale package.
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DKM812
300KHz
DKM812-E
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DKM812
Abstract: rf mems switch
Text: PRELIMINARY SPDT MEMS DKM812 SWITCH DESCRIPTION The DKM812 is a Single Pole Double-Throw SPDT Reflective RF switch that utilizes breakthrough MEMS technology to provide extremely low insertion loss, high linearity, and high isolation in a compact chip-scale package.
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DKM812
300KHz
DKM812-E
rf mems switch
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2SMES-01
Abstract: rf mems switch MEMS SWITCH rf mems omron power loss relay
Text: Omron Releases New RF MEMS Switch with Superior High Frequency Characteristics rated to 100 Million Operations November 2008—Schaumburg, IL USA, Omron Electronic Components LLC has announced the release of the 2SMES-01 high frequency mechanical relay utilizing its expertise in MEMS
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2008--Schaumburg,
2SMES-01
10GHz
rf mems switch
MEMS SWITCH
rf mems
omron power loss relay
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DKM812-3
Abstract: Dow-Key Microwave TT-612 TT612-3 jedec package MO-220 16 pin tt612 jedec footprint MO-220 VNND-2
Text: PRELIMINARY SPDT MEMS DKM812-3 SWITCH DESCRIPTION The DKM 812 is a Single Pole Double-Throw SPDT Reflective RF switch that utilizes breakthrough MEMS technology to provide extremely low insertion loss, high linearity, and high isolation in a compact hermetic chip-scale package.
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DKM812-3
DKM812
CTRL22
Dow-Key Microwave
TT-612
TT612-3
jedec package MO-220 16 pin
tt612
jedec footprint MO-220 VNND-2
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IDT CMOS Oscillators
Abstract: 4EA10 4EA1250A0
Text: Integrated Device Technology MEMS Oscillators: 4E Series POWER MANAGEMENT | ANALOG & RF | INTERFACE & CONNECTIVITY | The Analog and Digital Company TIMING & SYNCHRONIZATION | MEMORY & LOGIC | DATA CONVERSION QUAD y Frequenc BENEFITS / FEATURES • Dual outputs
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4EA1250A0
4EA1000A0
REVB0413
IDT CMOS Oscillators
4EA10
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Untitled
Abstract: No abstract text available
Text: 4H Series MEMS Oscillators Integrated Device Technology POWER MANAGEMENT | | ANALOG & RF The Analog and Digital Company INTERFACE & CONNECTIVITY | TIMING & SYNCHRONIZATION | MEMORY & LOGIC | DATA CONVERSION 100 fs Phase J itter! Smallest package 3225
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100fs
875MHz
20MHz)
1000ppm
REVA0313
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AD6489
Abstract: tegra 250 AD8017 AD6689 Globespan chip set AD8012 AD8016 AD8018 AD8019 AD8322
Text: THE BROADBAND BEAT Newsletter Vol. 1 Fall 2001 xDSL Analog DSP Power Management RF Chip Sets Presented by: ADSL - It’s as simple as Annex A,B,C How to put the “POP” back into your interop MEMS Audio RF Synthesizers DDS www.analog.com/comms ne o Z n o
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AD6x89
D-81373
AD6489
tegra 250
AD8017
AD6689
Globespan chip set
AD8012
AD8016
AD8018
AD8019
AD8322
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M1C06-CDK2
Abstract: rf mems switch RF SPDT
Text: M1C06-CDK2 4822 McGrath Street, Ventura, CA 93003 Tel: 805 650-0260 Fax: (805) 650-1734 Visit at www.dowkey.com SPDT, 1 Form C Magnetic Latching Gold Alloy Operation Actuator Contact Material DC-6GHz 100 Million Cycles SPDT Bi-Polar Latching RF MEMS Switch
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M1C06-CDK2
M1C06-CDK2
rf mems switch
RF SPDT
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rf mems switch
Abstract: MEMS package
Text: MEMS Oscillators: 4M Series Integrated Device Technology POWER MANAGEMENT | | ANALOG & RF The Analog and Digital Company INTERFACE & CONNECTIVITY | | TIMING & SYNCHRONIZATION MEMORY & LOGIC | DATA CONVERSION 5032 Packa ges ! < 1 ps Phase Jitter! • Low Jitter
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REVB0413
rf mems switch
MEMS package
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Untitled
Abstract: No abstract text available
Text: 4M Series MEMS Oscillators Integrated Device Technology POWER MANAGEMENT | | ANALOG & RF The Analog and Digital Company | INTERFACE & CONNECTIVITY | TIMING & SYNCHRONIZATION MEMORY & LOGIC | DATA CONVERSION 5032 Packa ges ! < 1 ps Phase Jitter! • Low Jitter
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REVB0213
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Untitled
Abstract: No abstract text available
Text: Ultra-Low Jitter MEMS Oscillators: 4H Series Integrated Device Technology ANALOG AND RF | DATA CONVERSION | INTERFACE AND CONNECTIVITY | MEMORY AND LOGIC | POWER MANAGEMENT | TIMING AND SYNCHRONIZATION The Analog and Digital Company 100 fs Phase Jitter
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00dBc/Hz
25MHz)
100fs
875MHz
20MHz)
250fs
12KHz
1000ppm
REVB0613
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A2235-H
Abstract: No abstract text available
Text: Product Brief A2235-H GPS receiver Stack-up Antenna SiRFstarIV Integrated Solution Positioning Product Fleet management Asset Tracking Vehicle Tracking Personal Tracking Portable Device Integrated Antenna RF switch Low Power Consumption MEMS support The A2235-H is Maestro’s next generation of active GPS module, integrating a
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A2235-H
A2235-H
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l6562 flyback led design
Abstract: l6562 flyback design Full-bridge LLC resonant converter stereo amplifier 400W l6562 buck led design MR-16 Full-bridge LLC resonant inverter application l6562 LED Viper22 application viper22
Text: Demonstration boards STMicroelectronics application support May 2009 www.st.com/evalboards Contents Product demonstration boards 4 Audio ICs 4 Power management ICs 5 Motion sensors MEMS 7 RF power 8 Motor control ICs 8 Lighitng ICs 9 Communication and connectivity ICs
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comPC320,
ST72F325K4T6
STEVAL-CBP003V1
STLED316SMTR,
ST7FLITE39F2M6
STEVAL-CBP004V1
STFPC311,
ST72264
STEVAL-CBP005V1
HR21/H21
l6562 flyback led design
l6562 flyback design
Full-bridge LLC resonant converter
stereo amplifier 400W
l6562 buck led design
MR-16
Full-bridge LLC resonant inverter
application l6562 LED
Viper22 application
viper22
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LT8415
Abstract: RF MOSFET Driver LTM4614 design ideas piezo actuator driver rf mems switch
Text: DESIGN IDEAS L Low Power Boost Regulator with Dual Half-Bridge in 3mm x 2mm DFN Drives MEMS and Piezo Actuators by Jesus Rosales Introduction Advances in manufacturing technology have made it possible for actuators, sensors, RF relays, and other moveable
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LT8415
500mV/DIV
RF MOSFET Driver
LTM4614
design ideas
piezo actuator driver
rf mems switch
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