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    RF MMIC MARK CODE AS Search Results

    RF MMIC MARK CODE AS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC4511BP Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, BCD-to-7-Segment Decoder, DIP16 Visit Toshiba Electronic Devices & Storage Corporation
    1812WBT1.5-2LC Coilcraft Inc RF Transformer, 2.75MHz Min, 135MHz Max, 1.5:1, ROHS COMPLIANT Visit Coilcraft Inc Buy
    1812WBT2-1LC Coilcraft Inc RF Transformer, 0.8MHz Min, 23MHz Max, 2:1, ROHS COMPLIANT Visit Coilcraft Inc Buy
    1812WBT-2LB Coilcraft Inc RF Transformer, 0.8MHz Min, 60MHz Max, 1:1, ROHS COMPLIANT Visit Coilcraft Inc
    1812WBT-5LC Coilcraft Inc RF Transformer, 48MHz Min, 645MHz Max, 1:1, ROHS COMPLIANT Visit Coilcraft Inc

    RF MMIC MARK CODE AS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MGF 1200

    Abstract: mitsubishi mgf MGF7170AC
    Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> MGF7170AC Technical Note UHF BAND GaAs POWER AMPLIFIER Specifications are subject to change without notice. DESCRIPTION The MGF7170AC is a monolithic microwave integrated circuit for use in CDMA base handheld phone. PIN CONFIGURATION


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    MGF7170AC MGF7170AC 28dBm 78GHz -46dBc 28dBm 520mA MGF 1200 mitsubishi mgf PDF

    MGF 1200

    Abstract: mitsubishi mgf RF MMIC MARK CODE AS mitsubishi microwave MGF7169C HPA 1200 RF MMIC MARK CODE -03 2SP53
    Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> MGF7169C Technical Note UHF BAND GaAs POWER AMPLIFIER Specifications are subject to change without notice. DESCRIPTION PIN CONFIGURATION TOP VIEW The MGF7169C is a monolithic microwave integrated circuit for use in CDMA base handheld phone.


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    MGF7169C MGF7169C 28dBm 91GHz -46dBc 28dBm 520mA 1000pF 600um MGF 1200 mitsubishi mgf RF MMIC MARK CODE AS mitsubishi microwave HPA 1200 RF MMIC MARK CODE -03 2SP53 PDF

    UMTS800

    Abstract: No abstract text available
    Text: !" PRELIMINARY DATASHEET WS2111 Power Amplifier Module for UMTS800 824-849MHz PRELIMINARY DATASHEET (DEVICE : WS2111, 4x4 UMTS800 PAM) Issued Date : August 25th , 2004 S. W. Paek Director, Module Group 1 Preliminary Information WM-0409-07 !" PRODUCT DESCRIPTION


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    WS2111 UMTS800 824-849MHz) WS2111, UMTS800 WM-0409-07 PDF

    TRANSISTOR SMD MARKING CODE WM

    Abstract: TRANSISTOR WM 9 smd electrolytic capacitors marking
    Text: !" PRELIMINARY DATASHEET WS2411 Power Amplifier Module for UMTS1900 1850-1910MHz PRELIMINARY DATASHEET (DEVICE : WS2411, 4x4 UMTS1900 PAM) Issued Date : September 8th, 2004 S. W. Paek Director, Module Group 1 Preliminary Information WM-0409-06 !" PRODUCT DESCRIPTION


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    WS2411 UMTS1900 1850-1910MHz) WS2411, UMTS1900 WM-0409-06 TRANSISTOR SMD MARKING CODE WM TRANSISTOR WM 9 smd electrolytic capacitors marking PDF

    Untitled

    Abstract: No abstract text available
    Text: !" PRELIMINARY DATASHEET WS2512 Power Amplifier Module for UMTS2100 1920-1980MHz PRELIMINARY DATASHEET (DEVICE : WS2512, 4x4 UMTS2100 PAM) Issued Date : September 8th, 2004 S. W. Paek Director, Module Group 1 Preliminary Information WM-0409-05 !" PRODUCT DESCRIPTION


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    WS2512 UMTS2100 1920-1980MHz) WS2512, UMTS2100 WM-0409-05 PDF

    RF MMIC MARK CODE E4

    Abstract: icc 312 NBB-300 NBB-310 NBB-312 NBB-312-E NBB-312-T1 NBB-400 NLB-300 NLB-310
    Text: NBB-312 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz RoHS Compliant & Pb-Free Product Package Style: MPGA, Bowtie, 3x3, Ceramic Features „ „ „ „ „ Reliable, Low-Cost HBT Design 12.5dB Gain High P1dB of +15.8dBm at 6GHz Single Power Supply Operation


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    NBB-312 12GHz NBB-312 2002/95/EC DS080807 RF MMIC MARK CODE E4 icc 312 NBB-300 NBB-310 NBB-312-E NBB-312-T1 NBB-400 NLB-300 NLB-310 PDF

    WS1111

    Abstract: J-STD-020A J-STD-033
    Text: !" PRELIMINARY DATASHEET WS1111 Power Amplifier Module for CDMA/AMPS 824-849MHz PRELIMINARY DATASHEET (DEVICE : WS1111, 4x4 CDMA/AMPS PAM) Issued Date : Dec. 22, 2003 S. W. Paek Senior MTS, Module Group 1 Preliminary Information WR20310-001 !" PRODUCT DESCRIPTION


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    WS1111 824-849MHz) WS1111, WR20310-001 WS1111 824-849MHz J-STD-020A J-STD-033 PDF

    era2

    Abstract: No abstract text available
    Text: Mini-Circuits - Specification for Amplifier - ERA-2 Amplifier print this page ERA-2 Frequency Dynamic GAIN, dB Maximum Power, dBm MHz Range fL - fU Min. VSWR In In Output Input NF IP3 DC- 3-f 1 dB Min. (no dB dBm u 3 Comp. damage) Typ. Typ. GHz GHz Absolute


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    DC-6000 era2 PDF

    transistor wm

    Abstract: smd transistor marking 1 da
    Text: !" PRELIMINARY DATASHEET WS1213 Power Amplifier Module for J-CDMA 887-925MHz DATASHEET (DEVICE : WS1213, 4x4 JAPAN CDMA PAM) Issued Date : December 9 , 2004 S. W. Paek Director, Module Group 1 Preliminary Information WM-0410-02 !" PRODUCT DESCRIPTION WS1213


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    WS1213 887-925MHz) WS1213, WM-0410-02 887-925MHz transistor wm smd transistor marking 1 da PDF

    ERA-1 MAR

    Abstract: MMIC marking code R
    Text: Mini-Circuits - Specification for Amplifier - ERA-1 Amplifier print this page ERA-1 Frequency Dynamic GAIN, dB Maximum Power, dBm MHz Range fL - fU Min. VSWR In In Output Input NF IP3 DC- 3-f 1 dB Min. (no dB dBm u 3 Comp. damage) Typ. Typ. GHz GHz Absolute


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    DC-8000 ERA-1 MAR MMIC marking code R PDF

    Untitled

    Abstract: No abstract text available
    Text: Mini-Circuits - Specification for Amplifier - ERA-5 Amplifier print this page ERA-5 Frequency Dynamic GAIN, dB Maximum Power, dBm MHz Range fL - fU Min. VSWR In In Output Input NF IP3 DC- 3-f 1 dB Min. (no dB dBm u 3 Comp. damage) Typ. Typ. GHz GHz Absolute


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    DC-4000 PDF

    MMIC marking code R

    Abstract: ERA-3 RF MMIC MARK CODE -03 vv105 mini
    Text: Mini-Circuits - Specification for Amplifier - ERA-3 Amplifier print this page ERA-3 Frequency Dynamic GAIN, dB Maximum Power, dBm MHz Range fL - fU Min. VSWR 3 3 2,4 75 35 330 3.20 154 Notes: Pin Connections Port RF in RF Out DC Case GND Not Used 1 DC Power


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    DC-3000 MMIC marking code R ERA-3 RF MMIC MARK CODE -03 vv105 mini PDF

    MMIC MAV 11

    Abstract: VV105
    Text: Mini-Circuits - Specification for Amplifier - ERA-4 Amplifier print this page ERA-4 Frequency Dynamic GAIN, dB Maximum Power, dBm MHz Range fL - fU Min. VSWR In In Output Input NF IP3 DC- 3-f 1 dB Min. (no dB dBm u 3 Comp. damage) Typ. Typ. GHz GHz Absolute


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    DC-4000 MMIC MAV 11 VV105 PDF

    HA22040

    Abstract: hitachi a january b february Hitachi DSA0015
    Text: HA22040 GaAs MMIC Down Converter for Micro Wave Application ADE-207-318 Z 1st. Edition December 1999 Features • • • • • Suitable for down converter of Micro Wave Application(1.5 GHz) Low voltage and low current operation (2.7V, 6mA typ.) High conversion gain (10.5 dB typ. @1489MHz)


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    HA22040 ADE-207-318 1489MHz) HA22040 hitachi a january b february Hitachi DSA0015 PDF

    RxBN

    Abstract: CX77133
    Text: Preliminary Information This document contains information on a new product. The parametric information, although not fully characterized, is the result of testing initial devices. CX77133 Power Amplifier Module for CDMA PCS 1850–1910 MHz The CX77133 Power Amplifier Module (PAM) is a fully matched, 6-pin surface mount


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    CX77133 CX77133 RxBN PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Information This document contains information on a new product. The parametric information, although not fully characterized, is the result of testing initial devices. CX77133 ry Power Amplifier 3–4 Volts for CDMA PCS 1850–1910 MHz The CX77133 Power Amplifier is a fully matched 6-pin surface mount module


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    CX77133 CX77133 PDF

    MAR-7 MMIC

    Abstract: No abstract text available
    Text: Mini-Circuits - Specification for Amplifier - MAR-7 Amplifier print this page MAR-7 Frequency GAIN, dB MHz fL - fU Min. Maximum Power, dBm Dynamic Range VSWR Absolute Maximum Rating DC Power Thermal resistance Øjc Output Input NF IP3 CurIn Out I P Device


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    DC-2000 MAR-7 MMIC PDF

    JEDEC J-STD-033 TAPE AND REEL

    Abstract: IPC-7721 IPC 7721
    Text: !" PRELIMINARY DATASHEET WS1113 Power Amplifier Module for CDMA/AMPS 824-849MHz DATASHEET (DEVICE : WS1113, 4x4 PAM) Issued Date : January 29, 2005 1 Preliminary Information WM0501-13 !" PRODUCT DESCRIPTION WS1113 Power Amplifier Module for CDMA/AMPS(824-849MHz)


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    WS1113 824-849MHz) WS1113, WM0501-13 824-849MHz JEDEC J-STD-033 TAPE AND REEL IPC-7721 IPC 7721 PDF

    MAV-11SM

    Abstract: No abstract text available
    Text: Mini-Circuits - Specification for Amplifier - MAV-11SM Amplifier print this page MAV-11SM Frequency GAIN, dB MHz fL - fU Maximum Power, dBm Output 1 dB Comp. Min. Input (no damage) Dynamic Range VSWR Absolute Maximum Rating DC Power Thermal resistance Øjc


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    MAV-11SM MAV-11SM PDF

    Untitled

    Abstract: No abstract text available
    Text: Mini-Circuits - Specification for Amplifier - MAR-4 Amplifier print this page MAR-4 Frequency GAIN, dB MHz fL - fU Min. Maximum Power, dBm Dynamic Range VSWR Absolute Maximum Rating DC Power Thermal resistance Øjc Output Input NF IP3 CurIn Out I P Device


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    DC-1000 PDF

    MAR-2 MMIC

    Abstract: No abstract text available
    Text: Mini-Circuits - Specification for Amplifier - MAR-2 Amplifier print this page MAR-2 Frequency GAIN, dB MHz fL - fU Min. Maximum Power, dBm Dynamic Range VSWR Absolute Maximum Rating DC Power Thermal resistance Øjc Output Input NF IP3 CurIn Out I P Device


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    DC-2000 MAR-2 MMIC PDF

    MMIC MAR-6

    Abstract: MMIC Amplifier mar6 MAR6
    Text: Mini-Circuits - Specification for Amplifier - MAR-6 Amplifier print this page MAR-6 Frequency GAIN, dB MHz fL - fU Min. Maximum Power, dBm Dynamic Range VSWR Absolute Maximum Rating DC Power Thermal resistance Øjc Output Input NF IP3 CurIn Out I P Device


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    DC-2000 MMIC MAR-6 MMIC Amplifier mar6 MAR6 PDF

    1715G

    Abstract: 17-15G
    Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> MGF7170AC Technical Note UHF BAND GaAs POWER AMPLIFIER Specifications are subject to change without notice. DESCRIPTION The M G F7170A C is a monolithic microwave integrated circuit for use in C DM A base handheld phone.


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    MGF7170AC MGF7170A 28dBm -46dB 10sec 1715G 17-15G PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> MGF7170AC Technical Note UHF BAND GaAs POWER AMPLIFIER S pecifications are su b je ct to ch a n g e w ith o u t notice. PIN CONFIGURATION TOP VIEW DESCRIPTION T he M G F7170A C is a m onolithic m icrow ave integrated


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    MGF7170AC F7170A PDF