RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ Search Results

RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ Result Highlights (5)

Part	Manufacturer	Description
LBAA0QB1SJ-295	Murata Manufacturing Co Ltd	SX1262 MODULE WITH OPEN MCU
GRM-KIT-OVER100-DE-D	Murata Manufacturing Co Ltd	0805-1210 over100uF Cap Kit
LBUA5QJ2AB-828	Murata Manufacturing Co Ltd	QORVO UWB MODULE
LXMSJZNCMH-225	Murata Manufacturing Co Ltd	Ultra small RAIN RFID chip tag
LXMS21NCMH-230	Murata Manufacturing Co Ltd	Ultra small RAIN RFID chip tag

RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2N5108 Abstract: RF NPN POWER TRANSISTOR 2 WATT 2 GHZ TRANSISTOR C-111 M MOTOROLA 2N5108 Text: MOTOROLA SEM IC O N D U CTO R TECHNICAL DATA The RF Line 1.0 W - 1 GHz HIGH FREQUENCY TRANSISTOR NPN SILIC O N NPN SILICON HIGH-FREQUENCY TRANSISTOR . . designed fo r am plifier, frequency m u ltip lie r, or oscillator applica tions in m ilita ry and industrial equipm ent. Suitable fo r use as outp ut,	OCR Scan	2N5108 2N5108 RF NPN POWER TRANSISTOR 2 WATT 2 GHZ TRANSISTOR C-111 M MOTOROLA 2N5108	PDF
BD135 Abstract: BD136 MJD47 MRF20030 RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ MOTOROLA 727 Text: MOTOROLA Order this document by MRF20030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030 RF Power Bipolar Transistor 30 W, 2.0 GHz NPN SILICON BROADBAND RF POWER TRANSISTOR • Specified 26 Volts, 2.0 GHz, Class AB, Two–Tones Characteristics	Original	MRF20030/D MRF20030 BD135 BD136 MJD47 MRF20030 RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ MOTOROLA 727	PDF
rohm mtbf Abstract: CAPACITOR chip murata mtbf CAPACITOR murata mtbf MOTOROLA ELECTROLYTIC CAPACITOR RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ equivalent of transistor BFT 51 2 watt rf transistor RF NPN POWER TRANSISTOR 1000 WATT BD135 transistor RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MRF15030 The RF Line NPN Silicon RF Power Transistor Motorola Preferred Device Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM	OCR Scan	MRF15030 BD135) BD136) GX-0300-55-22, MRF15030 rohm mtbf CAPACITOR chip murata mtbf CAPACITOR murata mtbf MOTOROLA ELECTROLYTIC CAPACITOR RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ equivalent of transistor BFT 51 2 watt rf transistor RF NPN POWER TRANSISTOR 1000 WATT BD135 transistor RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ	PDF
2N5108 Abstract: No abstract text available Text: I 4bE D L3b72S4 I OCmOfc.2 4 • M 0 ïb T : 3 3 " Û 5 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5108 MOTOROLA SC XSTRS/R F T h e R F L in e 1.0 W -1 GHz HIGH FREQUEN CY TRANSISTOR NPN SILIC O N NPN SILICON HIGH-FREQUENCY TRANSISTOR . . . designed for amplifier, frequency multiplier, or oscillator applica*	OCR Scan	L3b72S4 2N5108 2N5108	PDF
capacitor mallory Abstract: RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ 1000 watt Motorola power supply RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ 100 watt transistor bd136 equivalent rohm mtbf Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor MRF15030 Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400-1600 MHz.	OCR Scan	BD135) BD136) MRF15030 capacitor mallory RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ 1000 watt Motorola power supply RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ 100 watt transistor bd136 equivalent rohm mtbf	PDF
te 1820 Abstract: RF NPN POWER TRANSISTOR 2 WATT 2 GHZ Text: ERICSSON ^ PTB 20146 0.4 Watt, 1.8-2.0 GHz Cellular Radio RF Power Transistor D escription The 20146 is a class A, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 0.4 watt minimum output power, it may be used for both CW and PEP applications.	OCR Scan		PDF
178 09T Abstract: capacitor mallory 1000 watt Motorola power supply RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ 100 watt transistor transistor MTBF CAPACITOR chip murata mtbf RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ bd136 equivalent Mallory Capacitor Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400-1600 MHz.	OCR Scan	BD135) BD136) GX-0300-55-22, MRF15030 178 09T capacitor mallory 1000 watt Motorola power supply RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ 100 watt transistor transistor MTBF CAPACITOR chip murata mtbf RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ bd136 equivalent Mallory Capacitor	PDF
RF NPN POWER TRANSISTOR 2 WATT 2 GHZ Abstract: IEC-68-2-54 RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ J-STD-002 RF NPN POWER TRANSISTOR CLASS 2 WATT 2 GHZ Text: e PTB 20146 0.4 Watt, 1.8–2.0 GHz Cellular Radio RF Power Transistor Description The 20146 is a class A, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 0.4 watt minimum output power, it may be used for both CW and PEP	Original	IEC-68-2-54 Std-002-A 1-877-GOLDMOS 1301-PTB RF NPN POWER TRANSISTOR 2 WATT 2 GHZ IEC-68-2-54 RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ J-STD-002 RF NPN POWER TRANSISTOR CLASS 2 WATT 2 GHZ	PDF
RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ Abstract: RF NPN POWER TRANSISTOR 1000 WATT 2N5109 TRANSISTOR 12 GHZ Text: 2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • 1.2 GHz Current-Gain Bandwidth Product @ 50mA • 1. Emitter 2. Base 3. Collector Maximum Unilateral Gain = 12dB typ @ 200 MHz TO-39 DESCRIPTION:	Original	2N5109 To-39 MRF545 MRF544 RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 1000 WATT 2N5109 TRANSISTOR 12 GHZ	PDF
Untitled Abstract: No abstract text available Text: e PTB 20179 0.4 Watt, 1.8–2.0 GHz Cellular Radio RF Power Transistor Description The 20179 is an NPN, common emitter RF power transistor intended for class A, 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 0.4 watt minimum output power, it may be used for both CW and PEP	Original	1-877-GOLDMOS 1301-PTB20179	PDF
RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ Abstract: RF NPN POWER TRANSISTOR CLASS 2 WATT 2 GHZ 9434 "RF Power Transistor" z-Source 15 w RF POWER TRANSISTOR NPN Text: e PTB 20179 0.4 Watt, 1.8–2.0 GHz Cellular Radio RF Power Transistor Description The 20179 is an NPN, common emitter RF power transistor intended for class A, 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 0.4 watt minimum output power, it may be used for both CW and PEP	Original	1-877-GOLDMOS 1301-PTB20179 RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ RF NPN POWER TRANSISTOR CLASS 2 WATT 2 GHZ 9434 "RF Power Transistor" z-Source 15 w RF POWER TRANSISTOR NPN	PDF
rohm mtbf Abstract: kermet case b bd136 equivalent 933 TRANSISTOR SILICON PNP POWER TRANSISTOR b 861 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line MRF20030 RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequen cies from 1800 to 2000 MHz. The high gain and broadband performance of this	OCR Scan	1S211 1S22I MRF20030 rohm mtbf kermet case b bd136 equivalent 933 TRANSISTOR SILICON PNP POWER TRANSISTOR b 861	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF15030/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF15030 Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM	Original	MRF15030/D MRF15030 MRF15030/D*	PDF
CAPACITOR chip murata mtbf Abstract: RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ rohm mtbf CAPACITOR chip mtbf GX-0300-55-22 IrL 1540 N RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ BD136 RF NPN POWER TRANSISTOR CLASS 2 WATT 2 GHZ transistor bd136 Text: MOTOROLA Order this document by MRF15030/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF15030 Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM	Original	MRF15030/D MRF15030 MRF15030/D* CAPACITOR chip murata mtbf RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ rohm mtbf CAPACITOR chip mtbf GX-0300-55-22 IrL 1540 N RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ BD136 RF NPN POWER TRANSISTOR CLASS 2 WATT 2 GHZ transistor bd136	PDF

bd136 equivalent Abstract: RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ motorola rf power transistors mtbf MOTOROLA ELECTROLYTIC CAPACITOR electrolytic Mallory Capacitor transistor APPLICATIONS Hf 12 v 150 watt transistor bd135 1000 watt Motorola power supply 2779, transistor MUR3160T3 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line RF Power Bipolar Transistors MRF20060 MRF20060S The MRF20060 and MRF20060S are designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high	OCR Scan	MRF20060 MRF20060S Impedan70 IS22I bd136 equivalent RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ motorola rf power transistors mtbf MOTOROLA ELECTROLYTIC CAPACITOR electrolytic Mallory Capacitor transistor APPLICATIONS Hf 12 v 150 watt transistor bd135 1000 watt Motorola power supply 2779, transistor MUR3160T3	PDF
RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ Abstract: RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ 2N5109 RF NPN POWER TRANSISTOR C 10-12 GHZ transistor BFR91 2n3866 2N3866 application note RF NPN POWER TRANSISTOR 2.5 GHZ S-parameter 2N5179 Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • 1.2 GHz Current-Gain Bandwidth Product @ 50mA •	Original	2N5109 To-39 2N3866A MRF559 MRF904 MRF5943C 2N4427 MRF4427, RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ 2N5109 RF NPN POWER TRANSISTOR C 10-12 GHZ transistor BFR91 2n3866 2N3866 application note RF NPN POWER TRANSISTOR 2.5 GHZ S-parameter 2N5179	PDF
2N5109 Abstract: transistor 2N5109 RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ for transistor bfr96 2n5109 transistor Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • 1.2 GHz Current-Gain Bandwidth Product @ 50mA •	Original	2N5109 To-39 Volta12, 2N3866A MRF559 MRF904 MRF5943C 2N4427 MRF4427, 2N5109 transistor 2N5109 RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ for transistor bfr96 2n5109 transistor	PDF
bd135 equivalent Abstract: RF NPN POWER TRANSISTOR 2 WATT 2 GHZ rohm mtbf MOTOROLA ELECTROLYTIC CAPACITOR RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ Arlon mallory 170 bd136 equivalent mrf2006 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line RF Pow er Bipolar Transistors M RF20060 M RF20060S The MRF20060 and MRF20060S are designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high	OCR Scan	MRF20060 MRF20060S Impedanc159 IS22I bd135 equivalent RF NPN POWER TRANSISTOR 2 WATT 2 GHZ rohm mtbf MOTOROLA ELECTROLYTIC CAPACITOR RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ Arlon mallory 170 bd136 equivalent mrf2006	PDF
bd136 equivalent Abstract: RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ pl 032 pif FL 032 PIF Text: MOTOROLA Order this document by MRF20060/D SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line RF Power Bipolar Transistors MRF20060 MRF20060S The MRF20060 and MRF20060S are designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high	OCR Scan	MRF20060/D MRF20060 MRF20060S bd136 equivalent RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ pl 032 pif FL 032 PIF	PDF
DBT134 Abstract: No abstract text available Text: MOTOROLA Order this document by MRF20030R/D SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line M RF20030R RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequen cies from 1800 to 2000 MHz. The high gain and broadband performance of this	OCR Scan	MRF20030R/D DBT134	PDF
RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ Abstract: RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ RF NPN POWER TRANSISTOR CLASS 2 WATT 2 GHZ BD136 BD135 MJD47 MRF20060 MRF20060S RF NPN POWER TRANSISTOR CLASS 2 WATT 2.4 GHZ x Text: MOTOROLA Order this document by MRF20060/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line RF Power Bipolar Transistors MRF20060 MRF20060S The MRF20060 and MRF20060S are designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high	Original	MRF20060/D MRF20060 MRF20060S MRF20060 MRF20060S RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ RF NPN POWER TRANSISTOR CLASS 2 WATT 2 GHZ BD136 BD135 MJD47 RF NPN POWER TRANSISTOR CLASS 2 WATT 2.4 GHZ x	PDF
RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ Abstract: MOTOROLA TRANSISTOR 935 BD136 bd136 transistor 10J capacitor RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ transistor NPN 30 watt BD135 MJD47 MRF20030 Text: MOTOROLA Order this document by MRF20030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030 RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain and broadband performance of this	Original	MRF20030/D MRF20030 RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ MOTOROLA TRANSISTOR 935 BD136 bd136 transistor 10J capacitor RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ transistor NPN 30 watt BD135 MJD47 MRF20030	PDF
j174 transistor Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line M icrow ave Pow er Transistor . . . designed for CW and long pulsed common base amplifier applications, such as JTIDS and Mode S, in the 0.96 to 1.215 GHz frequency range at high overall duty cycles. • Guaranteed Performance @ 1.215 GHz, 28 Vdc	OCR Scan	MRF10005 j174 transistor	PDF
MRF905 Abstract: motorola MRF905 46bsc radiosonde Text: 4bE D MOTOROLA SC X S TR S /R F MOTOROLA SEM ICONDUCTOR b3b7254 O C m W 1 •MOTb T - 3 '- f t TECHNICAL DATA MRF905 # The RF Line 400 mW R F OSCILLATOR TRANSISTOR NPN SILICON NPN SILICON OSCILLATOR TRANSISTOR . . . designed for microwave com m unications relay links and low-cost	OCR Scan	b3b7254 MRF905 MRF905 motorola MRF905 46bsc radiosonde	PDF

RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ Search Results

RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ Result Highlights (5)

RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ Datasheets Context Search

2N5108

BD135

rohm mtbf

2N5108

capacitor mallory

te 1820

178 09T

RF NPN POWER TRANSISTOR 2 WATT 2 GHZ

RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ

Untitled

RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ

rohm mtbf

Untitled

CAPACITOR chip murata mtbf

bd136 equivalent

RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ

2N5109

bd135 equivalent

bd136 equivalent

DBT134

RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ

RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ

j174 transistor

MRF905