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    RF POWER TRANSISTOR C 10-12 GHZ CHIP Search Results

    RF POWER TRANSISTOR C 10-12 GHZ CHIP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    RF POWER TRANSISTOR C 10-12 GHZ CHIP Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TRANSISTOR cBC 415

    Abstract: Inside the RF Power Transistor PTB20105 RF POWER TRANSISTOR RF Transistor Selection transistor theory ericsson rf
    Text: e Inside the RF Power Transistor Prepared by Ted Johansson, Dr. Tech. Process and Device Design, Business Center RF Power, Ericsson Components AB, Kista, Sweden Introduction The purpose of this application note is to show some of the chip level design considerations and technical details


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    TED-21, TRANSISTOR cBC 415 Inside the RF Power Transistor PTB20105 RF POWER TRANSISTOR RF Transistor Selection transistor theory ericsson rf PDF

    transistor bfr96

    Abstract: BFR96 BFR964 RF NPN POWER TRANSISTOR 3 GHZ 200 watts motorola J50 datasheet for transistor bfr96 BFR96 TRANSISTOR BFR961 RF TRANSISTOR 1.5 GHZ BFR96 motorola
    Text: MOTOROLA Order this document by BFR96/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor BFR96 The BFR96 transistor uses the same state–of–the–art microwave transistor chip which features fine–line geometry, ion–implanted arsenic emitters and gold


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    BFR96/D BFR96 BFR96 BFR96/D* DEVICEBFR96/D transistor bfr96 BFR964 RF NPN POWER TRANSISTOR 3 GHZ 200 watts motorola J50 datasheet for transistor bfr96 BFR96 TRANSISTOR BFR961 RF TRANSISTOR 1.5 GHZ BFR96 motorola PDF

    AT41500

    Abstract: AT-41500 transistor zo 109 TRANSISTOR zo 109 ma CHIP TRANSISTOR TRANSISTOR 12 GHZ 3 w RF POWER TRANSISTOR NPN 50/TRANSISTOR zo 109 ma transistor Gigahertz AT-41586
    Text: AT-41500 Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Data Sheet Description/Applications Features The AT-41500 of Avago Techologies is a general purpose NPN bipolar transistor chip that offers excellent high frequency performance. The 4 micron emitter-to-emitter pitch enables this transistor to be


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    AT-41500 AT-41500 AT-41500-GP4 AV01-0077EN AT41500 transistor zo 109 TRANSISTOR zo 109 ma CHIP TRANSISTOR TRANSISTOR 12 GHZ 3 w RF POWER TRANSISTOR NPN 50/TRANSISTOR zo 109 ma transistor Gigahertz AT-41586 PDF

    AT-41500

    Abstract: TRANSISTOR zo 109 ma transistor zo 109 ZO 109 transistor at41500
    Text: AT-41500 Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Data Sheet Description/Applications Features The AT-41500 of Avago Techologies is a general purpose NPN bipolar transistor chip that offers excellent high frequency performance. The 4 micron emitter-to-emitter pitch enables this transistor to be


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    AT-41500 AT-41500 AT-41500-GP4 AV01-0077EN TRANSISTOR zo 109 ma transistor zo 109 ZO 109 transistor at41500 PDF

    8054 transistor

    Abstract: TRANSISTOR 4847 AT-41500 s415 RF s415 TRANSISTOR c 5803 AT-41586 S21E chip die npn transistor AT41500
    Text: AT-41500 Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Data Sheet Description/Applications Features The AT-41500 of Avago Techologies is a general purpose NPN bipolar transistor chip that offers excellent high frequency performance. The 4 micron emitter-to-emitter pitch enables this transistor to be


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    AT-41500 AT-41500 AT-41500-GP4 045mm AV01-0077EN AV01-0438EN 8054 transistor TRANSISTOR 4847 s415 RF s415 TRANSISTOR c 5803 AT-41586 S21E chip die npn transistor AT41500 PDF

    8054 transistor

    Abstract: TRANSISTOR 4847 TRANSISTOR c 5803 s415 RF AT-41586 chip die npn transistor at41500 AT-41500
    Text: AT-41500 Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Data Sheet Description/Applications Features The AT-41500 of Avago Techologies is a general purpose NPN bipolar transistor chip that offers excellent high frequency performance. The 4 micron emitter-to-emitter


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    AT-41500 AT-41500 AT-41500-GP4 045mm AV01-0438EN AV02-1844EN 8054 transistor TRANSISTOR 4847 TRANSISTOR c 5803 s415 RF AT-41586 chip die npn transistor at41500 PDF

    at6400

    Abstract: AT-64000-GP4 AT-64000
    Text: AT-64000 Up to 4 GHz Linear Power Silicon Bipolar Transistor Chip Data Sheet Description Features The AT-64000 of Avago Technologies is a high performance NPN silicon bipolar transistor. This device is designed for use in medium power, wideband amplifier and oscillator applications operating over VHF, UHF and


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    AT-64000 AT-64000 AT-64000-GP4 AV01-0274EN AV02-1929EN at6400 AT-64000-GP4 PDF

    at 64000

    Abstract: at64000 S21E at-64000
    Text: AT-64000 Up to 4 GHz Linear Power Silicon Bipolar Transistor Chip Data Sheet Description Features The AT-64000 of Avago Technologies is a high performance NPN silicon bipolar transistor. This device is designed for use in medium power, wideband amplifier and oscillator applications operating over


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    AT-64000 AT-64000 AT-64000-GP4 AV01-0274EN at 64000 at64000 S21E PDF

    RFSP5910

    Abstract: 2.4 ghZ rf transistor "network interface cards"
    Text: RFSP5910 2.4 & 5 GHz Single-Chip Wireless LAN Power Amplifier PRODUCT DESCRIPTION The RFSP5910 is the industry’s first dual-band power amplifier IC designed for use in wireless local area network WLAN systems at 2.4 and 5 GHz. The single-chip IC is targeted for network interface cards (NIC) that can address both 802.11a


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    RFSP5910 RFSP5910 2.4 ghZ rf transistor "network interface cards" PDF

    TRANSISTOR R1002

    Abstract: R1002 TRANSISTOR R1002 84-1LMI XR1002
    Text: 20.0-32.0 GHz GaAs MMIC Receiver R1002 October 2001 - Rev 10/05/01 Features Chip Device Layout y 20.0-32.0 GHz Frequency Range High Dynamic Range Receiver +4.0 dBm Third Order Intercept 3.0 dB Typical Noise Figure 18.0 dB Typical Image Rejection 100% On-Wafer RF and DC Testing


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    R1002 MIL-STD-883 TRANSISTOR R1002 R1002 TRANSISTOR R1002 84-1LMI XR1002 PDF

    Infineon technology roadmap for mosfet

    Abstract: germanium transistor pnp smd smd mosfet sot-363 microwave transistor siemens bfp 420 varactor flip chip radar 77 ghz sige Infineon automotive semiconductor technology roadmap transistor SMD DK qs siemens spc 2 SiGe PNP transistor
    Text: Small CHIPS for big visions Silicon Discretes www.infineon.com Never stop thinking. INTRODUCTION O n e o f t h e w o r l d ' s major manufacturers of radio frequency RF components, Infineon Technologies is committed to innovative technologies and products, flexible service and the very best supply conditions for customers and partners.


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    B191-H7496-G1-X-7600 Infineon technology roadmap for mosfet germanium transistor pnp smd smd mosfet sot-363 microwave transistor siemens bfp 420 varactor flip chip radar 77 ghz sige Infineon automotive semiconductor technology roadmap transistor SMD DK qs siemens spc 2 SiGe PNP transistor PDF

    8909E

    Abstract: AT-42000 AT-42000-GP4 S21E
    Text: Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip Technical Data AT-42000 Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0 GHz 20.5 dBm Typical P1 dB at 4.0 GHz • High Gain at 1 dB Compression: 15.0 dB Typical G1 dB at 2.0 GHz 10.0 dB Typical G1 dB at 4.0 GHz


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    AT-42000 AT-42000 RN/50 5965-8909E 8909E AT-42000-GP4 S21E PDF

    AT-42000

    Abstract: low noise amplifier ghz AT-42000-GP4 S21E 42000GP4
    Text: Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip Technical Data AT-42000 Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0␣ GHz 20.5 dBm Typical P1 dB at 4.0␣ GHz • High Gain at 1 dB Compression: 15.0 dB Typical G1 dB at 2.0␣ GHz


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    AT-42000 AT-42000 RN/50 low noise amplifier ghz AT-42000-GP4 S21E 42000GP4 PDF

    AT-41400

    Abstract: AT-41400-GP4 NF50 S21E chip die npn transistor
    Text: Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Technical Data AT-41400 Features • Low Noise Figure: 1.6 dB Typical at 2.0 GHz 3.0 dB Typical at 4.0 GHz • High Associated Gain: 14.5 dB Typical at 2.0 GHz 10.5 dB Typical at 4.0 GHz • High Gain-Bandwidth


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    AT-41400 AT-41400 RN/50 5965-8922E AT-41400-GP4 NF50 S21E chip die npn transistor PDF

    TRANSISTOR R1002

    Abstract: R1002 R1002 TRANSISTOR TRANSISTORS R1002 256QAM 84-1LMI XH1000 XR1002
    Text: 20.0-32.0 GHz GaAs MMIC Receiver R1002 May 2002 - Rev 01-May-02 Features Chip Device Layout y High Dynamic Range Receiver Integrated Gain Control +4.0 dBm Input Third Order Intercept IIP3 3.0 dB Noise Figure 18.0 dB Image Rejection 100% On-Wafer RF and DC Testing


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    R1002 01-May-02 MIL-STD-883 TRANSISTOR R1002 R1002 R1002 TRANSISTOR TRANSISTORS R1002 256QAM 84-1LMI XH1000 XR1002 PDF

    8909E

    Abstract: AT-42000 AT-42000-GP4 S21E AT42000-GP4 AV02-1002EN 42000
    Text: AT-42000 Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip Data Sheet Description Features Avago’s AT-42000 is a general purpose NPN bipolar transistor chip that offers excellent high frequency performance. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 20 emitter finger interdigitated geometry yields a medium sized


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    AT-42000 AT-42000 5965-8909E AV02-1002EN 8909E AT-42000-GP4 S21E AT42000-GP4 42000 PDF

    Untitled

    Abstract: No abstract text available
    Text: 18.0-34.0 GHz GaAs MMIC Receiver R1002 May 2005 - Rev 13-May-05 Features Chip Device Layout Fundamental High Dynamic Range Receiver Integrated Gain Control +4.0 dBm Input Third Order Intercept IIP3 14.0 dB Conversion Gain 3.0 dB Noise Figure 25.0 dB Image Rejection


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    R1002 13-May-05 MIL-STD-883 PDF

    BFR96

    Abstract: BFR96 TRANSISTOR transistor bfr96
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor BFR96 The BFR96 transistor uses the same state-of-the-art microwave transistor chip which features fine-line geometry, ion-implanted arsenic emitters and gold top metallization. This transistor is intended for low-to-medium power amplifiers


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    BFR96 BFR96 D10b3 BFR96 TRANSISTOR transistor bfr96 PDF

    BFR96

    Abstract: No abstract text available
    Text: MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA The RF Line NPN S ilico n H igh -Frequ en cy Thransistor The BFR96 transistor uses the same state-of-the-art microwave transistor chip which features fine-line geometry, ion-implanted arsenic emitters and gold top metallization. This transistor is intended for low-to-medium power amplifiers


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    BFR96 BFR96 PDF

    Transistor C G 774 6-1

    Abstract: C G 774 6-1 transistor a 1941 a/Transistor C G 774 6-1 RLF100-11/12/Transistor C G 774 6-1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon H igh-Frequency Transistor The BFR96 transistor uses the sam e s ta te -o f-th e -a rt microwave transistor chip which features fine -line geometry, ion-im planted arsenic em itters and gold top metallization. This transistor is intended for low -to -m e dium power amplifiers


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    BFR96 Transistor C G 774 6-1 C G 774 6-1 transistor a 1941 a/Transistor C G 774 6-1 RLF100-11/12/Transistor C G 774 6-1 PDF

    active double balanced mixer

    Abstract: 180MIL hic an005
    Text: HEW LETT PACKARD IAM-81000 MagIC Silicon Bipolar MMIC 5 GHz Active Double Balanced Mixer/IF Amplifer Chip Features • • • • • • • • IAM-81000 Chip Outline 8 dB RF-IF Conversion Gain From 0.05 to 5 GHz IF Output From DC to 1 GHz with Gain


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    IAM-81000 active double balanced mixer 180MIL hic an005 PDF

    IAM-81000

    Abstract: IAM transistor
    Text: HEWLETT-PACKARD/ CMP N T S blE J> m M447SA4 aOCH'nb fl5b IAM-81000 MagIC Silicon Bipolar MMIC 5 GHz Active Double Balanced Mixer/IF Amplifer Chip Thai HEW LETT W!HA PACKARD IAM-81000 Chip Outline Features • • • • • • • • I HPA 8 dB RF-IF Conversion Gain From 0.05 to 5 GHz


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    M447SA4 IAM-81000 IAM transistor PDF

    AT-42000

    Abstract: 42000
    Text: What HEWLETT* mLliM PACKARD Up to 6 GHz Medium Pow er Silicon Bipolar Transistor Chip Technical Data AT-42000 This device is designed for use in low noise, wideband amplifier, • High Output Power: 21.0 dBm Typical PldB at 2.0 GHz mixer and oscillator applications


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    AT-42000 AT-42000 nitride44 Rn/50 42000 PDF

    T3D 62

    Abstract: t3d 98 AT-41400 T3D 87 AT-41400-GP4 t3d 54 chip die npn transistor t3d 69 T3D 83 t3d 66
    Text: K m HEWLETT PACKARD Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Technical Data AT-41400 Features that are easy to match for low noise and moderate power appli­ cations. This device is designed for use in low noise, wideband amplifier, mixer and oscillator


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    AT-41400 AT-41400 Rn/50 MM475flM 0017bE3 17L24 T3D 62 t3d 98 T3D 87 AT-41400-GP4 t3d 54 chip die npn transistor t3d 69 T3D 83 t3d 66 PDF