RF POWER VERTICAL MOSFET 1000 W Search Results

RF POWER VERTICAL MOSFET 1000 W Result Highlights (5)

Part	Manufacturer	Description
MG800FXF1JMS3	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB
XPJ1R004PB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL
TK4K1A60F	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS

RF POWER VERTICAL MOSFET 1000 W Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
z14b Abstract: RO3010 C14A C12A C12B C13B MRF374 r1a transistor VJ2225Y Z14A Text: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA MRF374 N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of this	Original	MRF374/D MRF374 z14b RO3010 C14A C12A C12B C13B MRF374 r1a transistor VJ2225Y Z14A	PDF
C13B Abstract: z14b c18a C14A C12A C12B MRF374 RO3010 Z10A RF POWER VERTICAL MOSFET 1000 w Text: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374 N–Channel Enhancement–Mode Lateral MOSFET ARCHIVED 2005 Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of this	Original	MRF374/D MRF374 C13B z14b c18a C14A C12A C12B MRF374 RO3010 Z10A RF POWER VERTICAL MOSFET 1000 w	PDF
Untitled Abstract: No abstract text available Text: ARCH I V ED BY FREESCALE SEM I CON DU CT OR, I N C. 2 0 0 5 MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374 N–Channel Enhancement–Mode Lateral MOSFET ARCHIVED 2005 Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of this	Original	MRF374/D MRF374 28rola,	PDF
1000w power amplifier circuit diagram Abstract: 800w power amplifier circuit diagram 1200w power amplifier circuit diagram amplifier circuit diagram class D 1000w 500 watt mosfet power amplifier circuit diagram 27.12MHz power amplifier APT9701 1000 watt ferrite transformer ar164 hf 800w power Amplifier diagram Text: APPLICATION NOTE APT9701 Low Cost 1000 Watt 300 Volt RF Power Amplifier for 27.12MHz 1 Low Cost 1000 Watt 300 Volt RF Power Amplifier for 27.12MHz Richard Frey, P.E., RF Applications Engineering, Advanced Power Technology Inc, Bend, OR ABSTRACT directly to a single stage PFC regulated power supply	Original	APT9701 12MHz O-247 300VDC AN749, DL110, 1000w power amplifier circuit diagram 800w power amplifier circuit diagram 1200w power amplifier circuit diagram amplifier circuit diagram class D 1000w 500 watt mosfet power amplifier circuit diagram 27.12MHz power amplifier APT9701 1000 watt ferrite transformer ar164 hf 800w power Amplifier diagram	PDF
marking c14a Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF372 Rev. 9, 5/2006 RF Power Field-Effect Transistor MRF372R3 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of	Original	MRF372 MRF372R3 MRF372R5 MRF372R3 marking c14a	PDF
marking c14a Abstract: RO3010 mrf372 marking L4A c7a series vishay capacitor NTHS-1206J14520R5 bc16a C15B transistor D 863 vishay 1001 Text: Freescale Semiconductor Technical Data Document Number: MRF372 Rev. 9, 5/2006 RF Power Field-Effect Transistor MRF372R3 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of	Original	MRF372 MRF372R3 MRF372R5 MRF372 marking c14a RO3010 marking L4A c7a series vishay capacitor NTHS-1206J14520R5 bc16a C15B transistor D 863 vishay 1001	PDF
part marking information vishay HD 1 Abstract: l1a marking MRF372R5 Text: Freescale Semiconductor Technical Data Document Number: MRF372 Rev. 9, 5/2006 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF372R3 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this	Original	MRF372 MRF372R3 MRF372R5 MRF372 part marking information vishay HD 1 l1a marking MRF372R5	PDF
marking c14a Abstract: marking R5b R5B transistor RO3010 MRF372 marking L4A C14A device L1a marking L1A marking on device MRF372R3 Text: Freescale Semiconductor Technical Data Document Number: MRF372 Rev. 9, 5/2006 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF372R3 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this	Original	MRF372 MRF372R3 MRF372R5 MRF372R3 marking c14a marking R5b R5B transistor RO3010 MRF372 marking L4A C14A device L1a marking L1A marking on device	PDF
RO3010 Abstract: marking c14a marking R5b device L1a marking L1A marking on device marking r4b diode C14A marking us capacitor pf l1 R4A print MRF372 Text: Freescale Semiconductor Technical Data RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF372R3 MRF372R5 LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this	Original	MRF372R3 MRF372R5 MRF372R3 MRF372 RO3010 marking c14a marking R5b device L1a marking L1A marking on device marking r4b diode C14A marking us capacitor pf l1 R4A print MRF372	PDF
800w power amplifier circuit diagram Abstract: 1200w power amplifier circuit diagram amplifier circuit diagram class D 1000w 1000w power amplifier circuit diagram 1000 watts amplifier schematic diagram with part 1200w power amplifier amplifier circuit diagram 1000 watt 300w mosfet power amplifier circuit diagram 1200w amplifier "Good RF Construction Practices and Techniques" Text: APPLICATION NOTE APT9502 By Kenneth W. Dierberger APT9502 LOW COST 1000 WATT, 300 VOLT RF POWER AMPLIFIER FOR 13.56 MHz Presented at RF EXPO EAST 1995 Page 1 Low Cost 1000 Watt, 300 Volt RF Power Amplifier for 13.56MHz Kenneth Dierberger Applications Engineering Manager	Original	APT9502 56MHz 1000Watt, 56MHz 300VDC U-134, APT9303. 800w power amplifier circuit diagram 1200w power amplifier circuit diagram amplifier circuit diagram class D 1000w 1000w power amplifier circuit diagram 1000 watts amplifier schematic diagram with part 1200w power amplifier amplifier circuit diagram 1000 watt 300w mosfet power amplifier circuit diagram 1200w amplifier "Good RF Construction Practices and Techniques"	PDF
800w rf power amplifier circuit diagram Abstract: MRF6VP11KH 1000w power amplifier circuit diagram 200W PUSH-PULL 1000w power AMPLIFIER pcb circuit amplifier circuit diagram class D 1000w 500w FM power amplifier circuit diagram MRFE6VP6300H RF Amplifier 500w 175 mhz 1000w class d circuit diagram schematics Text: White Paper 50V RF LDMOS An ideal RF Power technology for ISM, broadcast and commercial aerospace applications Freescale Semiconductor www.freescale.com/rfpower I. INTRODUCTION RF LDMOS RF Laterally Diffused MOS , hereafter referred to as LDMOS, is the dominant device technology used in	Original	1990s. 2010are 50VRFLDMOSWP 800w rf power amplifier circuit diagram MRF6VP11KH 1000w power amplifier circuit diagram 200W PUSH-PULL 1000w power AMPLIFIER pcb circuit amplifier circuit diagram class D 1000w 500w FM power amplifier circuit diagram MRFE6VP6300H RF Amplifier 500w 175 mhz 1000w class d circuit diagram schematics	PDF
RO3010 Abstract: Z14B C14A thermistor r5t MRF374 470 860 mhz PCB transistor R1A C14B r1a transistor transistor z2b Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF374 N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device	Original	MRF374 31JUL04 31JAN05 RO3010 Z14B C14A thermistor r5t 470 860 mhz PCB transistor R1A C14B r1a transistor transistor z2b	PDF
NEM0899F01-30 Abstract: 13t transistor broadband impedance transformation Text: High Power N-Channel Silicon MOSFET For Broadcast / Transmitters NEM0899F01-30 OUTLINE DIMENSIONS Units in mm FEATURES • HIGH OUTPUT POWER: 100 Watts PACKAGE OUTLINE F01 • HIGH GAIN: Linear Gain = 12 dB • LOW INTERMODULATION DISTORTION 45˚ 45˚ G2	Original	NEM0899F01-30 NEM0899F01-30 16AWG 18AWG 24-Hour 13t transistor broadband impedance transformation	PDF
NEM0899F01-30 Abstract: 13t transistor broadband impedance transformation Text: High Power N-Channel Silicon MOSFET For Broadcast / Transmitters NEM0899F01-30 OUTLINE DIMENSIONS Units in mm FEATURES • HIGH OUTPUT POWER: 100 Watts PACKAGE OUTLINE F01 • HIGH GAIN: Linear Gain = 12 dB • LOW INTERMODULATION DISTORTION 45˚ 45˚ • HIGH DYNAMIC RANGE	Original	NEM0899F01-30 NEM0899F01-30 16AWG 18AWG 24-Hour 13t transistor broadband impedance transformation	PDF

Z14b Abstract: Z10A RO3010 Z11A VJ2225Y C14A thermistor C11 Z11B C12A C12B Text: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA Product Is Not Recommended for New Design. The next generation of higher performance products are in development. Visit our online Selector Guides http://mot–sps.com/rf/sg/sg.html for scheduled introduction dates.	Original	MRF374/D MRF374 Z14b Z10A RO3010 Z11A VJ2225Y C14A thermistor C11 Z11B C12A C12B	PDF
RO3010 Abstract: C14A z14b Text: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device	Original	MRF374/D MRF374 MRF374/D RO3010 C14A z14b	PDF
Z14b Abstract: Z10A Z12B Z10B z11b r1a transistor C14A RO3010 C12A C12B Text: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA Product Is Not Recommended for New Design. The next generation of higher performance products are in development. Visit our online Selector Guides http://mot–sps.com/rf/sg/sg.html for scheduled introduction dates.	Original	MRF374/D MRF374 Z14b Z10A Z12B Z10B z11b r1a transistor C14A RO3010 C12A C12B	PDF
Vj3640Y Abstract: transistor L1A Text: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA MRF374 N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device	Original	MRF374/D MRF374 Vj3640Y transistor L1A	PDF
thermistor r5t Abstract: chip resistor 1206 c19a S1239 MOTOROLA P C3B Kemet bc17a GX-0300-55 R7B Connector RO3010 Text: MOTOROLA MRF373 MRF373S The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs 60 W, 470 – 860 MHz, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETS Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this	Original	MRF373S MRF373 31JUL04 31JAN05 thermistor r5t chip resistor 1206 c19a S1239 MOTOROLA P C3B Kemet bc17a GX-0300-55 R7B Connector RO3010	PDF
"RF MOSFET" 300W Abstract: arco 467 trimmer 300WF Text: VRF2933 50V 300W 150MHz RF POWER VERTICAL MOSFET The VRF2933 is a gold metallized silicon, n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, and inter-modulation	Original	VRF2933 150MHz VRF2933 30MHz, "RF MOSFET" 300W arco 467 trimmer 300WF	PDF
Untitled Abstract: No abstract text available Text: MTT 2001 Vdmos vs. LDMOS How to Choose Polyfet Rf Devices S. K. Leong Tuesday, May 22, 2001 1 Vdmos vs Ldmos • Technology - Process Structure Differences. • DC Characteristics • RF Characteristics – Gain, Stability, Ruggedness • Applications – HF, VHF, Low UHF, High UHF, PCS	Original		PDF
15J02 Abstract: 15j02 rf Motorola motorola 15J02 RF MOSFETs 15J02 motorola MRF501 F5015 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F5015 Advance Information The RF MOSFET Line M o to ro la P re fe rre d D ev ice RF P o w er Field E ffe c t T ransistor N-Channei Enhancement-Mode 15 W, 512 MHz, 12.5 VOLTS N-CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and industrial applications at frequen	OCR Scan	F5015 RF5015 AN215A, MRF5015 15J02 15j02 rf Motorola motorola 15J02 RF MOSFETs 15J02 motorola MRF501 F5015	PDF
sg 421 thermistor Abstract: R03010 motorola balun motorola balun an 1982 hhsmith MRF374 RF POWER VERTICAL MOSFET 1000 w C14A motorola L6 C12A Text: MOTOROLA O rder this docum ent by M RF374/D SEMICONDUCTOR TECHNICAL DATA Product Is Not Recomm ended for New Design. The next generation of higher performance products are in developm ent. Visit our online Selector Guides http://m ot-sps.com /rf/sg/sg.htm l for scheduled introduction dates.	OCR Scan	MRF374/D MRF374/D sg 421 thermistor R03010 motorola balun motorola balun an 1982 hhsmith MRF374 RF POWER VERTICAL MOSFET 1000 w C14A motorola L6 C12A	PDF
VK200 inductor of high frequencies Abstract: VK200 INDUCTOR Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA M R F175LV M R F175LU The RF MOSFET Line RF P o w er F ie ld -E ffe ct Transistors N-Channel Enhancement-Mode 100 W, 28 V, 400 MHz N-CHANNEL BROADBAND RF POWER FETs . . . designed for broadband commercial and military appli cations using single	OCR Scan	MRF175LV MRF175LU MRF175L MRF175LV MRF175LU VK200 inductor of high frequencies VK200 INDUCTOR	PDF

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RF POWER VERTICAL MOSFET 1000 W Search Results

RF POWER VERTICAL MOSFET 1000 W Result Highlights (5)

RF POWER VERTICAL MOSFET 1000 W Datasheets Context Search

z14b

C13B

Untitled

1000w power amplifier circuit diagram

marking c14a

marking c14a

part marking information vishay HD 1

marking c14a

RO3010

800w power amplifier circuit diagram

800w rf power amplifier circuit diagram

RO3010

NEM0899F01-30

NEM0899F01-30

Z14b

RO3010

Z14b

Vj3640Y

thermistor r5t

"RF MOSFET" 300W

Untitled

15J02

sg 421 thermistor

VK200 inductor of high frequencies