DIODE d1d
Abstract: diode d3d 25C5250 B23G diode D2B
Text: MRFIC1859 Dual-Band/GSM 3.6 V Integrated Power Amplifier The MRFIC1859 is a dual–band, single supply RF Power Amplifier for GSM900/DCS1800 hand held radios. The on–chip spur free voltage generator reduces the number of external components by eliminating the
|
Original
|
MRFIC1859
GSM900/DCS1800
MRFIC1859
AN1599
MRFIC0913
MC33169
AN1697
DIODE d1d
diode d3d
25C5250
B23G
diode D2B
|
PDF
|
HSWA2-30DR
Abstract: HSWA2 RF switch negative voltage generator MAX8878 33uF capacitor
Text: BIASING OF HSWA2-30DR+ SPDT SWITCH WITH A 5V SUPPLY VOLTAGE The HSWA2-30DR+ switch uses a patented CMOS technology and operates with single positive supply voltage from 2.7V to 3.3V. This model has a patent pending low noise negative voltage generator which produces internally the negative supply voltage
|
Original
|
HSWA2-30DR+
MAX8878
HSWA2-30DR
HSWA2
RF switch negative voltage generator
MAX8878
33uF capacitor
|
PDF
|
kt812
Abstract: No abstract text available
Text: Order this document by MRFIC1859/D MRFIC1859 Dual-Band/GSM 3.6 V Integrated Power Amplifier The MRFIC1859 is a dual–band, single supply RF Power Amplifier for GSM900/DCS1800 hand held radios. The on–chip spur free voltage generator reduces the number of external components by eliminating the
|
Original
|
MRFIC1859/D
MRFIC1859
GSM900/DCS1800
MRFIC1859
kt812
|
PDF
|
TQFP-32EP
Abstract: transistor D 1710 TRANSISTOR D 1785 MC33170 MRFIC1859 MRFIC1859R2 D3G 21 t8 ballast circuits T-4718 Angle dimension representation in tables as per ASME
Text: Order this document by MRFIC1859/D MRFIC1859 Dual-Band/GSM 3.6 V Integrated Power Amplifier The MRFIC1859 is a dual–band, single supply RF Power Amplifier for GSM900/DCS1800 hand held radios. The on–chip spur free voltage generator reduces the number of external components by eliminating the
|
Original
|
MRFIC1859/D
MRFIC1859
MRFIC1859
GSM900/DCS1800
TQFP-32EP
transistor D 1710
TRANSISTOR D 1785
MC33170
MRFIC1859R2
D3G 21
t8 ballast circuits
T-4718
Angle dimension representation in tables as per ASME
|
PDF
|
D3G 21
Abstract: RF Product Device Data t8 ballast circuits MC33170 MRFIC1859 MRFIC1859R2 B2B diode motorola ic inv buffer transistor d 1710
Text: MRFIC1859 Freescale Semiconductor, Inc. DEVICE ON LIFETIME BUY Dual-Band/GSM 3.6 V Integrated Power Amplifier The MRFIC1859 is a dual–band, single supply RF Power Amplifier for GSM900/DCS1800 hand held radios. The on–chip spur free voltage generator reduces the number of external components by eliminating the
|
Original
|
MRFIC1859
MRFIC1859
GSM900/DCS1800
04JUL02
04JAN02
MRFIC1859/D
D3G 21
RF Product Device Data
t8 ballast circuits
MC33170
MRFIC1859R2
B2B diode
motorola ic inv buffer
transistor d 1710
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MRFIC1859 DEVICE ON LIFETIME BUY Freescale Semiconductor, Inc. Dual-Band/GSM 3.6 V Integrated Power Amplifier The MRFIC1859 is a dualband, single supply RF Power Amplifier for GSM900/DCS1800 hand held radios. The onchip spur free voltage generator reduces the number of external components by eliminating the
|
Original
|
MRFIC1859
MRFIC1859
GSM900/DCS1800
IP405,
MRFIC1859/D
04JUL02
04JAN02
|
PDF
|
Untitled
Abstract: No abstract text available
Text: INSTRUCTION MANUAL Model 1249B NTSC GENERATOR TEST INSTRUMENT SAFETY WARNING Normal use of test equipment exposes you to a certain amount of danger from electrical shock because testing must sometimes be performed where exposed voltage is present. An electrical shock causing 10 milliamps of current to pass through the heart will stop most human
|
Original
|
1249B
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BIASING OF HSWA2-30DR+ SPDT SWITCH WITH A 5V SUPPLY VOLTAGE AN-80-006 The HSWA2-30DR+ switch uses a patented CMOS technology and operates with single positive supply voltage from 2.7V to 3.3V. This model has a patent pending low noise negative voltage generator which produces internally the negative supply voltage
|
Original
|
HSWA2-30DR+
AN-80-006)
MAX8878
AN-80-006
M150261
AN80006
|
PDF
|
16EP
Abstract: No abstract text available
Text: MRFIC0919 3.6 V GSM GaAs Integrated Power Amplifier The MRFIC0919 is a single supply, RF power amplifier designed for the 2.0 W GSM900 handheld radio. The negative power supply is generated inside the chip using RF rectification, which avoids any spurious signal. A
|
Original
|
MRFIC0919
GSM900
AN1599
MRFIC0913
MC33169
AN1602
GSM/DCS1800
16EP
|
PDF
|
IC TA 7089 equivalent
Abstract: pcb antenna TA 7089 equivalent R13C
Text: MRFIC1819 3.6 V 18OO MHz GaAs Integrated Power Amplifier The MRFIC1819 is a single supply, RF power amplifier designed for the 1W DCS1800/PCS1900 handheld radio. The negative power supply is generated inside the chip using RF rectification, which avoids any spurious
|
Original
|
MRFIC1819
DCS1800/PCS1900
AN1599
MRFIC0913
MC33169
AN1602
GSM/DCS1800
IC TA 7089 equivalent
pcb antenna
TA 7089 equivalent
R13C
|
PDF
|
motorola zc 40
Abstract: motorola zc IC TA 7089 P
Text: Order this document by MRFIC1819/D MRFIC1819 Advance Information 3.6 V 18OO MHz GaAs Integrated Power Amplifier The MRFIC1819 is a single supply, RF power amplifier designed for the 1W DCS1800/PCS1900 handheld radio. The negative power supply is generated inside the chip using RF rectification, which avoids any spurious
|
Original
|
MRFIC1819/D
MRFIC1819
DCS1800/PCS1900
MRFIC1819/D
motorola zc 40
motorola zc
IC TA 7089 P
|
PDF
|
GRP155R71H102KA01B
Abstract: NHDS-04 metal detector schematic Diptronics GRP1555C1H1R8CZ01B SMIQ03B dip-4/sm LQG15HN1N5S02 sw dip-4/sm SE2525L
Text: SE2525L-AK2 RangeChargerTM 802.11g WLAN RF Power Amplifier Application Kit Negative Slope Power Detector Application Product Description IEEE 802.11g IEEE 802.11b Features Easy evaluation of the SE2525L Power Amplifier and SE2560L DPDT Switch
|
Original
|
SE2525L-AK2
SE2525L
SE2560L
11b/g
20dBm
17dBm
SE2525L-AK2
28-DST-04
GRP155R71H102KA01B
NHDS-04
metal detector schematic
Diptronics
GRP1555C1H1R8CZ01B
SMIQ03B
dip-4/sm
LQG15HN1N5S02
sw dip-4/sm
|
PDF
|
IC TA 7089 equivalent
Abstract: IC TA 7089 P R13C "RF Power Amplifier" motorola 1w zener diodes Zener diode 2.2X 948L MC33170 MMSZ4689T1 MRFIC1819
Text: Order this document by MRFIC1819/D MRFIC1819 3.6 V 18OO MHz GaAs Integrated Power Amplifier The MRFIC1819 is a single supply, RF power amplifier designed for the 1W DCS1800/PCS1900 handheld radio. The negative power supply is generated inside the chip using RF rectification, which avoids any spurious
|
Original
|
MRFIC1819/D
MRFIC1819
MRFIC1819
DCS1800/PCS1900
IC TA 7089 equivalent
IC TA 7089 P
R13C
"RF Power Amplifier"
motorola 1w zener diodes
Zener diode 2.2X
948L
MC33170
MMSZ4689T1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Order this document by MRFIC0919/D MRFIC0919 Advance Information 3.6 V GSM GaAs Integrated Power Amplifier The MRFIC0919 is a single supply, RF power amplifier designed for the 2.0 W GSM900 handheld radio. The negative power supply is generated inside the chip using RF rectification, which avoids any spurious signal. A
|
Original
|
MRFIC0919/D
MRFIC0919
GSM900
MRFIC0919/D
|
PDF
|
|
|
IC TA 7089
Abstract: IC TA 7089 equivalent IC TA 7089 P motorola application notES
Text: Order this document by MRFIC1819/D MRFIC1819 Advance Information 3.6 V 18OO MHz GaAs Integrated Power Amplifier The MRFIC1819 is a single supply, RF power amplifier designed for the 1W DCS1800/PCS1900 handheld radio. The negative power supply is generated inside the chip using RF rectification, which avoids any spurious
|
Original
|
MRFIC1819/D
MRFIC1819
DCS1800/PCS1900
MRFIC1819/D
IC TA 7089
IC TA 7089 equivalent
IC TA 7089 P
motorola application notES
|
PDF
|
Angle dimension representation in tables as per ASME
Abstract: No abstract text available
Text: Order this document by MRFIC0919/D MRFIC0919 Advance Information 3.6 V GSM GaAs Integrated Power Amplifier The MRFIC0919 is a single supply, RF power amplifier designed for the 2.0 W GSM900 handheld radio. The negative power supply is generated inside the chip using RF rectification, which avoids any spurious signal. A
|
Original
|
MRFIC0919/D
MRFIC0919
GSM900
MRFIC0919/D
Angle dimension representation in tables as per ASME
|
PDF
|
IC TA 7089 equivalent
Abstract: R13C 948L MMSZ4689T1 MRFIC1819 MRFIC1819R2 IC TA 7089 P IC TA 7089
Text: Order this document by MRFIC1819/D MRFIC1819 LAST ORDER 04JUL02 LAST SHIP 04JAN02 3.6 V 18OO MHz GaAs DEVICE ON LIFETIME BUY Integrated Power Amplifier The MRFIC1819 is a single supply, RF power amplifier designed for the 1W DCS1800/PCS1900 handheld radio. The negative power supply is
|
Original
|
MRFIC1819/D
MRFIC1819
04JUL02
04JAN02
MRFIC1819
DCS1800/PCS1900
IC TA 7089 equivalent
R13C
948L
MMSZ4689T1
MRFIC1819R2
IC TA 7089 P
IC TA 7089
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Order this document by MRFIC0919/D Freescale Semiconductor, Inc. MRFIC0919 LAST ORDER 04JUL02 LAST SHIP 04JAN02 3.6 V GSM GaAs Integrated DEVICE ON LIFETIME BUY Freescale Semiconductor, Inc. Power Amplifier The MRFIC0919 is a single supply, RF power amplifier designed for the
|
Original
|
MRFIC0919/D
MRFIC0919
04JUL02
04JAN02
MRFIC0919
GSM900
|
PDF
|
Zener diode 2.2X
Abstract: opamp 356 R13C motorola zc 948L GSM900 MC33170 MMSZ4689T1 MRFIC0919 MRFIC0919R2
Text: Order this document by MRFIC0919/D Freescale Semiconductor, Inc. MRFIC0919 LAST ORDER 04JUL02 LAST SHIP 04JAN02 3.6 V GSM GaAs Integrated Freescale Semiconductor, Inc. DEVICE ON LIFETIME BUY Power Amplifier The MRFIC0919 is a single supply, RF power amplifier designed for the
|
Original
|
MRFIC0919/D
MRFIC0919
04JUL02
04JAN02
MRFIC0919
GSM900
con80217.
Zener diode 2.2X
opamp 356
R13C
motorola zc
948L
MC33170
MMSZ4689T1
MRFIC0919R2
|
PDF
|
stacked transistor shunt switch
Abstract: RF 107 CMOS Stacked RF M21 mosfet matrix m21 SPDT stacked FET r01n Peregrine MRF MOSFET
Text: CMOS SOS SWITCHES DESIGN CMOS SOS Switches Offer Useful Features, High Integration Understanding the basic theory and characteristics underlying CMOS SOS switch technology opens the door to numerous RF and microwave applications. s witching RF and microwave signals is a fundamental function in all radio applications. Accordingly, there are a great
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Product Specification PE42821 UltraCMOS SPDT RF Switch 100 - 2700 MHz Product Description The PE42821 is a HaRP technology-enhanced high power reflective SPDT RF switch designed for use in mobile radio, relay replacement and other high performance wireless applications.
|
Original
|
PE42821
PE42821
PE42820.
32-lead
DOC-13714-3
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Product Specification PE42820 UltraCMOS SPDT RF Switch 30 - 2700 MHz Product Description The PE42820 is a HaRP technology-enhanced high power reflective SPDT RF switch designed for use in mobile radio, relay replacement and other high performance wireless applications.
|
Original
|
PE42820
PE42820
PE42510A
32-lead
DOC-13614-3
|
PDF
|
DC bias of gaas FET
Abstract: RF switch negative voltage generator "RF Switch" GaAs FET chip AN18 SPDT FETs integrated switch negative voltage generator
Text: Application Note AN18 RF Switch Performance Advantages of UltraCMOS Technology over GaAs Technology Introduction Summary: In RF systems, switches are as common as amplifiers, mixers, and PLLs. While many technologies yield good active RF devices, few yield good RF switches. Superior switches are
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor, Inc. Order number: MPC9895 Rev 0, 04/2003 TECHNICAL DATA Low Voltage PLL Intelligent Dynamic Clock IDCS Switch The MPC9895 is a 3.3V compatible, PLL based intelligent dynamic clock switch and generator specifically designed for redundant clock distribution systems. The device receives two LVCMOS clock signals and generates 12 phase
|
Original
|
MPC9895
|
PDF
|
