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    RF TRANSISTOR 1.5 GHZ Search Results

    RF TRANSISTOR 1.5 GHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LBAA0QB1SJ-295 Murata Manufacturing Co Ltd SX1262 MODULE WITH OPEN MCU Visit Murata Manufacturing Co Ltd
    GRM-KIT-OVER100-DE-D Murata Manufacturing Co Ltd 0805-1210 over100uF Cap Kit Visit Murata Manufacturing Co Ltd
    LBUA5QJ2AB-828 Murata Manufacturing Co Ltd QORVO UWB MODULE Visit Murata Manufacturing Co Ltd
    LXMSJZNCMH-225 Murata Manufacturing Co Ltd Ultra small RAIN RFID chip tag Visit Murata Manufacturing Co Ltd
    LXMS21NCMH-230 Murata Manufacturing Co Ltd Ultra small RAIN RFID chip tag Visit Murata Manufacturing Co Ltd

    RF TRANSISTOR 1.5 GHZ Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: NXP 1.4 to 1.7 GHz RF power transistor BLF7G15LS-200 RF power transistor for leading performance in 1.5 GHz LTE basestations Optimized for 1.5 GHz LTE/W-CDMA applications and built in rugged Gen7 LDMOS, this 28 V ceramic transistor delivers best-in-class efficiency in a symmetrical Doherty configuration.


    Original     		BLF7G15LS-200 BLF7G15LS PDF

    1415 ic

    Abstract: 33 pf capacitor PTB20173 RF NPN POWER TRANSISTOR 3 GHZ 200 watts
    Text: ERICSSON ^ PTB 20173 60 Watts, 1.4-1.5 GHz RF Power Transistor Description The 20173 is a preliminary class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation across 1.4 to 1.5 GHz frequency band. It is rated at 60 watts minimum output power and


    OCR Scan     		0093X2 G-200 1415 ic 33 pf capacitor PTB20173 RF NPN POWER TRANSISTOR 3 GHZ 200 watts PDF

    RF NPN POWER TRANSISTOR 3 GHZ

    Abstract: RF NPN POWER TRANSISTOR 3 GHZ 200 watts
    Text: ERICSSON ^ PTE 20173* 60 Watts, 1.4-1.5 GHz RF Power Transistor Description The 20173 is a preliminary class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation across 1.4 to 1.5 GHz frequency band. It is rated at 60 watts minimum output power and


    OCR Scan     		G-200 RF NPN POWER TRANSISTOR 3 GHZ RF NPN POWER TRANSISTOR 3 GHZ 200 watts PDF

    Untitled

    Abstract: No abstract text available
    Text: ERICSSON S PTB 20173 60 Watts, 1.4-1.5 GHz Cellular Radio RF Power Transistor Preliminary Key Features Description The 20173 is a class AB, NPN, common emitter RF Power Transistor intended for 26 VDC operation across the 1.4-1.5 GHz frequency band. It is rated at 60 Watts minimum output


    OCR Scan     		120mA PDF

    2SC5600

    Abstract: 2SC5737 IC 14558 IC 2801 UPA858TD-T3
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA858TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • 2 different built-in transistors (2SC5737, 2SC5600) Q1: Built-in low noise transistor NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz


    Original     		PA858TD 2SC5737, 2SC5600) S21e2 2SC5737 2SC5600 PA858TD-T3 2SC5600 2SC5737 IC 14558 IC 2801 UPA858TD-T3 PDF

    T88 NEC

    Abstract: 2SC5191-T1B 2sc5191
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5191 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz


    Original     		2SC5191 2SC5191 2SC5191-T1B T88 NEC PDF

    2SC5676

    Abstract: 2SC5737 MARKING VT
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA859TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5737, 2SC5676) Q1: Low noise transistor NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz


    Original     		PA859TD 2SC5737, 2SC5676) S21e2 2SC5737 2SC5676 PA859TD-T3 2SC5676 2SC5737 MARKING VT PDF

    a406 rf npn

    Abstract: No abstract text available
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA855TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5737, 2SC5745) Q1: Low noise transistor NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz


    Original     		PA855TD 2SC5737, 2SC5745) 2SC5737 2SC5745 PA855TD1 PU10098EJ01V0DS a406 rf npn PDF

    2SC5737

    Abstract: 2SC5745
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA855TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5737, 2SC5745) Q1: Low noise transistor NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz


    Original     		PA855TD 2SC5737, 2SC5745) S21e2 2SC5737 2SC5745 PA855TD-T3 2SC5737 2SC5745 PDF

    2SC5736

    Abstract: 2SC5737 marking VH
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA851TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5737, 2SC5736) Q1: Low noise transistor NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz


    Original     		PA851TD 2SC5737, 2SC5736) S21e2 2SC5737 2SC5736 PA851TD-T3 2SC5736 2SC5737 marking VH PDF

    2SC5193

    Abstract: No abstract text available
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5193 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz


    Original     		2SC5193 2SC5193 2SC5193-T1 25ation, PDF

    acrian RF POWER TRANSISTOR

    Abstract: acrian RF POWER TRANSISTOR 300 w acrian inc acrian H100-50
    Text: DE| ACRIAN INC 2301 DESCRIPTION 1.5 WATTS - 20 VOLTS 2300 MH2 The 2301 is a common base transistor capable of providing 1.5 watts of C W RF output power at 2300 MHz. This hermetically sealed transistor is specifically designed for telemetry and telecommunications applications. It


    OCR Scan     		-65to acrian RF POWER TRANSISTOR acrian RF POWER TRANSISTOR 300 w acrian inc acrian H100-50 PDF

    code marking NEC

    Abstract: date code marking NEC NEC MARKING CODE
    Text: PRELIMINARY DATA SHEET NPN SILICON RF TRANSISTOR NE687M33 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN SUPER LEAD-LESS MINIMOLD FEATURES • Low noise NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • 3-pin super lead-less minimold package


    Original     		NE687M33 NE687M33 NE687M33-T3 PU10342EJ01V0DS code marking NEC date code marking NEC NEC MARKING CODE PDF

    M33 TRANSISTOR

    Abstract: NEC TRANSISTOR MARKING CODE NE687M33 NE687M33-T3
    Text: DATA SHEET NPN SILICON RF TRANSISTOR NE687M33 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN SUPER LEAD-LESS MINIMOLD M33 FEATURES • Low noise NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • 3-pin super lead-less minimold (M33) package


    Original     		NE687M33 NE687M33-T3 M33 TRANSISTOR NEC TRANSISTOR MARKING CODE NE687M33 NE687M33-T3 PDF

    2SC5655

    Abstract: No abstract text available
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5655 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN NON-LEAD MINIMOLD FEATURES • 1006 package employed 1.0 x 0.6 × 0.5 mm • NF = 1.5 dB TYP., S21e2 = 4.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz


    Original     		2SC5655 S21e2 2SC5655-T1 2SC5655 PDF

    2sc5652

    Abstract: nec K 3570
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5652 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN NON-LEAD MINIMOLD FEATURES • 1006 package employed 1.0 x 0.6 × 0.5 mm • NF = 1.5 dB TYP., S21e2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz


    Original     		2SC5652 S21e2 2SC5652 2SC5652-T1 nec K 3570 PDF

    NEC TRANSISTOR MARKING CODE

    Abstract: date code marking NEC NEC MARKING CODE code marking NEC marking NEC rf transistor NEC Date code Marking nec npn rf NEC semiconductor
    Text: PRELIMINARY DATA SHEET NPN SILICON RF TRANSISTOR NE685M33 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN SUPER LEAD-LESS MINIMOLD FEATURES • Low noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 3 mA, f = 2 GHz • S21e = 11 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz


    Original     		NE685M33 NE685M33 NE685M33-T3 PU10341EJ01V0DS NEC TRANSISTOR MARKING CODE date code marking NEC NEC MARKING CODE code marking NEC marking NEC rf transistor NEC Date code Marking nec npn rf NEC semiconductor PDF

    2SC5437

    Abstract: 8193
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA829TD NPN SILICON RF TRANSISTOR WITH 2 ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation, low noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz


    Original     		PA829TD 2SC5437) 2SC5437 PA829TD-T3 2SC5437 8193 PDF

    2SC5437

    Abstract: 3-pin IC 7806 k 871
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA829TC NPN SILICON RF TRANSISTOR WITH 2 ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation, low noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz


    Original     		PA829TC 2SC5437) 2SC5437 PA829TC-T1 2SC5437 3-pin IC 7806 k 871 PDF

    TRANSISTOR C 5387

    Abstract: nec 2035 744 9012 transistor
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5618 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • NF = 1.4 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz • 3-pin lead-less minimold package


    Original     		2SC5618 2SC5618 2SC5618-T3 TRANSISTOR C 5387 nec 2035 744 9012 transistor PDF

    2SC2570A

    Abstract: marking PA33 2SC2570A-T PA33
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC2570A NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION DESCRIPTION The 2SC2570A is designed for use in Low Noise Amplifier of VHF and UHF satges. FEATURES • Low noise and high gain : NF = 1.5 dB TYP., Ga = 8 dB TYP. @ VCE = 10 V, IC = 5 mA, f = 1 GHz


    Original     		2SC2570A 2SC2570A 2SC2570A-T PU10207EJ01V0DS marking PA33 2SC2570A-T PA33 PDF

    nec 2035 744

    Abstract: MARKING W1 2SC5618 2SC5618-T3
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5618 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • NF = 1.4 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz • 3-pin lead-less minimold package


    Original     		2SC5618 2SC5618-T3 nec 2035 744 MARKING W1 2SC5618 2SC5618-T3 PDF

    nec 2035 744

    Abstract: 2SC5618 2SC5618-T3
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5618 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • NF = 1.4 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz • 3-pin lead-less minimold package


    Original     		2SC5618 2SC5618-T3 nec 2035 744 2SC5618 2SC5618-T3 PDF

    date code marking NEC

    Abstract: NEC TRANSISTOR MARKING CODE code marking NEC M33 marking NEC MARKING CODE NE685M33-T3 NE685M33 M33 TRANSISTOR
    Text: DATA SHEET NPN SILICON RF TRANSISTOR NE685M33 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN SUPER LEAD-LESS MINIMOLD M33 FEATURES • Low noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 3 mA, f = 2 GHz 2 • S21e = 11 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz


    Original     		NE685M33 NE685M33-T3 date code marking NEC NEC TRANSISTOR MARKING CODE code marking NEC M33 marking NEC MARKING CODE NE685M33-T3 NE685M33 M33 TRANSISTOR PDF