Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    RF TRANSISTOR 1500 MHZ Search Results

    RF TRANSISTOR 1500 MHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    RF TRANSISTOR 1500 MHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RF Transistor 1500 MHZ

    Abstract: uhf tv power transistor npn UHF transistor rf transistor 320 RF TRANSISTOR TV power transistor 15 w RF POWER TRANSISTOR NPN RF POWER TRANSISTOR NPN 2SC3121
    Text: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3121 DESCRIPTION •High Gain Bandwidth Product fT = 1500 MHz TYP. ·Excellent Linearity APPLICATIONS ·TV tuner, UHF oscillator applications. ·TV tuner, UHF converter applications.


    Original     		PDF 2SC3121 30MHz RF Transistor 1500 MHZ uhf tv power transistor npn UHF transistor rf transistor 320 RF TRANSISTOR TV power transistor 15 w RF POWER TRANSISTOR NPN RF POWER TRANSISTOR NPN 2SC3121

    167-097

    Abstract: 121-208 167-097-1 l 93059 61256 1617AM10 164512
    Text: 1617AM10 10 Watts, 18 Volts, Class A Linear 1500 - 1800 MHz GENERAL DESCRIPTION CASE OUTLINE 55AT, STYLE 2 The 1617AM10 is a COMMON EMITTER, HIGH GAIN transistor capable of providing 10 Watts, P1dB., Class A, RF output power in the band 1500 - 1800 MHz. The transistor includes double input and output prematching for full


    Original     		PDF 1617AM10 1617AM10 167-097 121-208 167-097-1 l 93059 61256 164512

    48536

    Abstract: 74166 data sheet IC 74166 16AM08 178003 162007 stk+142+150
    Text: 16AM08 8 Watts, 18 Volts, Class A Linear 1500 - 1700 MHz GENERAL DESCRIPTION CASE OUTLINE 55AW, STYLE 2 The 16AM08 is a COMMON EMITTER, HIGH GAIN transistor capable of providing 8 Watts , P1dB., Class A, RF output power in the band 1500 - 1700 MHz. The transistor includes double input and output prematching for full


    Original     		PDF 16AM08 16AM08 48536 74166 data sheet IC 74166 178003 162007 stk+142+150

    Untitled

    Abstract: No abstract text available
    Text: BLP15M7160P Power LDMOS transistor Rev. 2 — 10 June 2014 Product data sheet 1. Product profile 1.1 General description A 160W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1500 MHz. The


    Original     		PDF BLP15M7160P

    Untitled

    Abstract: No abstract text available
    Text: PTF141501A High Power RF LDMOS Field Effect Transistor 150 W, 1450 – 1500 MHz Description The PTF141501A is a150-watt, GOLDMOS FET intended for DAB applications. The device is characterized for Digital Audio Broadcast operation in the 1450 to 1500 MHz band. Full gold metallization ensures excellent


    Original     		PDF PTF141501A PTF141501A a150-watt,

    Untitled

    Abstract: No abstract text available
    Text: BLP15M7160P Power LDMOS transistor Rev. 1 — 10 January 2014 Objective data sheet 1. Product profile 1.1 General description A 160W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1500 MHz. The


    Original     		PDF BLP15M7160P

    Untitled

    Abstract: No abstract text available
    Text: BLF647PS Broadband power LDMOS transistor Rev. 2 — 18 November 2013 Product data sheet 1. Product profile 1.1 General description A 200 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1500 MHz. The


    Original     		PDF BLF647PS

    BLF647P

    Abstract: 130005 power transistor
    Text: BLF647P; BLF647PS Broadband power LDMOS transistor Rev. 1 — 3 August 2012 Objective data sheet 1. Product profile 1.1 General description A 200 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1500 MHz. The


    Original     		PDF BLF647P; BLF647PS BLF647P 130005 power transistor

    UT-090C-25

    Abstract: BLF647P 130005 power transistor
    Text: BLF647P Broadband power LDMOS transistor Rev. 2 — 12 April 2013 Product data sheet 1. Product profile 1.1 General description A 200 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1500 MHz. The


    Original     		PDF BLF647P UT-090C-25 BLF647P 130005 power transistor

    PTF141501A

    Abstract: LM7805 smd P02B LM7805 Application Notes on LM7805 lm7805 p transistor smd marking ND smd transistor marking ND transistor 45 f 122 smd transistor bcp56
    Text: PTF141501A High Power RF LDMOS Field Effect Transistor 150 W, 1450 – 1500 MHz, 1600 – 1700 MHz Description The PTF141501A is a150-watt, GOLDMOS FET intended for DAB applications. The device is characterized for Digital Audio Broadcast operation in the 1450 to 1500 MHz band. Full gold metallization ensures excellent


    Original     		PDF PTF141501A PTF141501A a150-watt, LM7805 smd P02B LM7805 Application Notes on LM7805 lm7805 p transistor smd marking ND smd transistor marking ND transistor 45 f 122 smd transistor bcp56

    16AM12

    Abstract: 535-1 TRANSISTOR C 3619
    Text: 16AM12 12 Watts, 22 Volts, Class A Linear, 1600 MHz GENERAL DESCRIPTION CASE OUTLINE 55AT, STYLE 2 The 16AM12 is a COMMON EMITTER transistor capable of providing 12 Watts Class A, RF output power in the band 1500 - 1700 MHz. The transistor includes double input and output prematching for full broadband capability.


    Original     		PDF 16AM12 16AM12 535-1 TRANSISTOR C 3619

    MW6S010NR1

    Abstract: A114 A115 AN1955 C101 JESD22 MW6S010 MW6S010GMR1 MW6S010GNR1 MW6S010MR1
    Text: Freescale Semiconductor Technical Data Document Number: MW6S010 Rev. 1, 5/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier


    Original     		PDF MW6S010 MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1 A114 A115 AN1955 C101 JESD22 MW6S010 MW6S010GMR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MW6S010 Rev. 0, 4/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier


    Original     		PDF MW6S010 MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1 MW6S010

    CRCW12061001F100

    Abstract: MW6S010NR1 A114 A115 AN1955 C101 JESD22 MW6S010 MW6S010GMR1 MW6S010GNR1
    Text: Freescale Semiconductor Technical Data Document Number: MW6S010 Rev. 1, 5/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier


    Original     		PDF MW6S010 MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1 CRCW12061001F100 A114 A115 AN1955 C101 JESD22 MW6S010 MW6S010GMR1

    ASI1010

    Abstract: ASI10525
    Text: ASI1010 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 1010 is Designed for General Purpose Class C Power Amplifier Applications up to 1500 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 12 dB min. at 10 W/ 1,000 MHz


    Original     		PDF ASI1010 C/W235 ASI1010 ASI10525

    ASI1005

    Abstract: ASI10524
    Text: ASI1005 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 1005 is Designed for General Purpose Class C Power Amplifier Applications up to 1500 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 12 dB min at 5 W/ 1,000 MHz


    Original     		PDF ASI1005 ASI1005 ASI10524

    ASI1002

    Abstract: ASI10523 class E power amplifier
    Text: ASI1002 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 1002 is Designed for General Purpose Class C Power Amplifier Applications up to 1500 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 12 dB min at 2.0 W / 1,000 MHz


    Original     		PDF ASI1002 ASI1002 ASI10523 class E power amplifier

    ASI1001

    Abstract: ASI10522
    Text: ASI1001 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 1001 is Designed for General Purpose Class C Power Amplifier Applications up to 1500 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 12 dB min.at 1.0 W / 1,000 MHz


    Original     		PDF ASI1001 ASI10522 ASI1001 ASI10522

    ASI1020

    Abstract: ASI10526
    Text: ASI1020 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 1020 is Designed for General Purpose Class C Power Amplifier Applications up to 1500 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 10 dB min.at 20 W / 1,000 MHz


    Original     		PDF ASI1020 ASI10526 ASI1020 ASI10526

    1005 NPN

    Abstract: ASI1005 ASI10524
    Text: ASI1005 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 1005 is Designed for General Purpose Class C Power Amplifier Applications up to 1500 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 12 dB min at 5 W/ 1,000 MHz


    Original     		PDF ASI1005 1005 NPN ASI1005 ASI10524

    ASI1010

    Abstract: ASI10525
    Text: ASI1010 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 1010 is Designed for General Purpose Class C Power Amplifier Applications up to 1500 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 12 dB min. at 10 W/ 1,000 MHz


    Original     		PDF ASI1010 ASI10525 ASI1010 ASI10525

    ASI1020

    Abstract: ASI10526 asi-1020
    Text: ASI1020 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 1020 is Designed for General Purpose Class C Power Amplifier Applications up to 1500 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 10 dB min.at 20 W / 1,000 MHz


    Original     		PDF ASI1020 ASI1020 ASI10526 asi-1020

    ASI1001

    Abstract: ASI10522
    Text: ASI1001 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 1001 is Designed for General Purpose Class C Power Amplifier Applications up to 1500 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 12 dB min.at 1.0 W / 1,000 MHz


    Original     		PDF ASI1001 ASI10522 ASI1001 ASI10522

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA M R F 1500 The RF Line M icrowave Pulse Power Transistor Motorola Preferred Device Designed for 1025-1150 MHz pulse common base amplifier applications such as DME. • 500 W PEAK . 1025-1150 MHz MICROWAVE POWER TRANSISTOR


    OCR Scan     		PDF MRF1500