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    RF TRANSISTOR 2.5GHZ Search Results

    RF TRANSISTOR 2.5GHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LBAA0QB1SJ-295 Murata Manufacturing Co Ltd SX1262 MODULE WITH OPEN MCU Visit Murata Manufacturing Co Ltd
    GRM-KIT-OVER100-DE-D Murata Manufacturing Co Ltd 0805-1210 over100uF Cap Kit Visit Murata Manufacturing Co Ltd
    LBUA5QJ2AB-828 Murata Manufacturing Co Ltd QORVO UWB MODULE Visit Murata Manufacturing Co Ltd
    LXMSJZNCMH-225 Murata Manufacturing Co Ltd Ultra small RAIN RFID chip tag Visit Murata Manufacturing Co Ltd
    LXMS21NCMH-230 Murata Manufacturing Co Ltd Ultra small RAIN RFID chip tag Visit Murata Manufacturing Co Ltd

    RF TRANSISTOR 2.5GHZ Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    CGH40045F

    Abstract: CGH40045 10UF cree L2
    Text: PRELIMINARY CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original     		CGH40045 CGH40045 CGH40045, CGH4004 CGH40045F 10UF cree L2 PDF

    CGH40045F

    Abstract: CGH40045 ATC100B Cree Microwave 10UF JESD22
    Text: CGH40045F 45 W, RF Power GaN HEMT Cree’s CGH40045F is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original     		CGH40045F CGH40045F CGH40045F, CGH4004 CGH40045 ATC100B Cree Microwave 10UF JESD22 PDF

    CGH40045

    Abstract: 8644 cgh40045f 8822 TRANSISTOR ATC100B Cree Microwave TC 8644 10UF 33UF RO4350B
    Text: CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original     		CGH40045 CGH40045 CGH40045, CGH4004 8644 cgh40045f 8822 TRANSISTOR ATC100B Cree Microwave TC 8644 10UF 33UF RO4350B PDF

    Untitled

    Abstract: No abstract text available
    Text: RF & Protection Devices Board Name BFP 540ESD Evalboard Products Description Order No. BFP 540ESD A low-cost, low-current broadband UHF low noise amplifier with the ESD-robust BFP 540ESD RF transistor. BFP540ESD board This board shows the ESD-robust BFR 460L3 board in ISM and


    Original     		540ESD 540ESD BFP540ESD 460L3 BFR460L3 434MHz BFP460 360L3 340L3 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original     		CGH40045 CGH40045 CGH40045, CGH4004 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original     		CGH40045 CGH40045 CGH40045, CGH4004 PDF

    Untitled

    Abstract: No abstract text available
    Text: CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high


    Original     		CGH40045 CGH40045 CGH40045, CGH40 40045P PDF

    CGH40045

    Abstract: CGH40045F JESD22 AN 17821 A 40045P CGH40045-TB
    Text: CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high


    Original     		CGH40045 CGH40045 CGH40045, CGH40 40045P CGH40045F JESD22 AN 17821 A 40045P CGH40045-TB PDF

    CGH40045

    Abstract: No abstract text available
    Text: CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high


    Original     		CGH40045 CGH40045 CGH40045, CGH40 40045P PDF

    Untitled

    Abstract: No abstract text available
    Text: CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high


    Original     		CGH40045 CGH40045 CGH40045, CGH40 40045P PDF

    Untitled

    Abstract: No abstract text available
    Text: CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high


    Original     		CGH40045 CGH40045 CGH40045, CGH40 40045P PDF

    CGH40045

    Abstract: No abstract text available
    Text: CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high


    Original     		CGH40045 CGH40045 CGH40045, CGH40 40045P PDF

    CGH40045-TB

    Abstract: CGH40045
    Text: CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high


    Original     		CGH40045 CGH40045 CGH40045, CGH40 40045P CGH40045-TB PDF

    Untitled

    Abstract: No abstract text available
    Text: START499 NPN Silicon RF Transistor • HIGH EFFICIENCY • HIGH GAIN • LINEAR AND NON LINEAR OPERATION • TRANSITION FREQUENCY 42GHz • ULTRA MINIATURE SOT343 SC70 PACKAGE SOT343 (SC70) DESCRIPTION START499 is a product of the START family that provide the market with a Si state-of-art RF process.


    Original     		START499 42GHz OT343 START499 OT343 START499TR PDF

    0765 ic

    Abstract: No abstract text available
    Text: START499 NPN Silicon RF Transistor PRELIMINARY DATA • HIGH EFFICIENCY • HIGH GAIN • LINEAR AND NON LINEAR OPERATION • TRANSITION FREQUENCY 42GHz • ULTRA MINIATURE SOT343 SC70 PACKAGE SOT343 (SC70) DESCRIPTION START499 is a product of the START family that provide the market with a Si state-of-art RF process.


    Original     		START499 42GHz OT343 START499 OT343 START499TR 0765 ic PDF

    ic 1496 specifications

    Abstract: ic 1496 applications sot-343 START499
    Text: START499 NPN Silicon RF Transistor PRELIMINARY DATA • HIGH EFFICIENCY • HIGH GAIN • LINEAR AND NON LINEAR OPERATION • TRANSITION FREQUENCY 42GHz • ULTRA MINIATURE SOT343 SC70 PACKAGE SOT343 (SC70) DESCRIPTION START499 is a product of the START family that provide the market with a Si state-of-art RF process.


    Original     		START499 42GHz OT343 START499 OT343 ic 1496 specifications ic 1496 applications sot-343 PDF

    JESD22-C101A

    Abstract: PD27025F RF MOSFET CLASS AB
    Text: PD27025F 25 W, 2.5GHz - 2.7GHz , N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The PD27025F is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for 2.5GHz - 2.7GHz Class AB wireless base station


    Original     		PD27025F PD27025F JESD22-C101A RF MOSFET CLASS AB PDF

    JESD22-C101A

    Abstract: PD25025F RF MOSFET CLASS AB mosfet rf class ab JESD22-A115A
    Text: PD25025F 25 W, 2.3GHz - 2.5GHz , N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The PD25025F is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for 2.3GHz - 2.5GHz Class AB wireless base station


    Original     		PD25025F PD25025F JESD22-C101A RF MOSFET CLASS AB mosfet rf class ab JESD22-A115A PDF

    JESD22-C101A

    Abstract: PD27025F
    Text: PD27025F 25 W, 2.5GHz - 2.7GHz , N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The PD27025F is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for 2.5GHz - 2.7GHz Class AB wireless base station


    Original     		PD27025F PD27025F 330mA 100kHz JESD22-C101A PDF

    JESD22-C101A

    Abstract: PD25025F rf transistor 2.5GHz RF MOSFET CLASS AB
    Text: PD25025F 25 W, 2.3GHz - 2.5GHz , N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The PD25025F is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for 2.3GHz - 2.5GHz Class AB wireless base station


    Original     		PD25025F PD25025F 330mA 100kHz JESD22-C101A rf transistor 2.5GHz RF MOSFET CLASS AB PDF

    transistor C640

    Abstract: transistor bf 179 transistor c640 npn START499 START499TR ST 7 L05 RF NPN power transistor 2.5GHz Ko 368
    Text: START499 NPN Silicon RF Transistor • HIGH EFFICIENCY • HIGH GAIN • LINEAR AND NON LINEAR OPERATION • TRANSITION FREQUENCY 42GHz • ULTRA MINIATURE SOT343 SC70 PACKAGE SOT343 (SC70) ORDER CODE START499TR DESCRIPTION START499 is a product of the START family that


    Original     		START499 42GHz OT343 START499TR START499 OT343 transistor C640 transistor bf 179 transistor c640 npn START499TR ST 7 L05 RF NPN power transistor 2.5GHz Ko 368 PDF

    transistor C640

    Abstract: c640 transistor START499 START499TR
    Text: START499 NPN Silicon RF Transistor • HIGH EFFICIENCY • HIGH GAIN • LINEAR AND NON LINEAR OPERATION • TRANSITION FREQUENCY 42GHz • ULTRA MINIATURE SOT343 SC70 PACKAGE SOT343 (SC70) ORDER CODE START499TR DESCRIPTION START499 is a product of the START family that


    Original     		START499 42GHz OT343 START499TR START499 OT343 transistor C640 c640 transistor START499TR PDF

    transistor C640

    Abstract: transistor c640 npn c640 transistor rc 3150 930E-15 573E SPICE PARAMETER, STMicroelectronics, bipolar transistor
    Text: START499 NPN Silicon RF Transistor • HIGH EFFICIENCY • HIGH GAIN • LINEAR AND NON LINEAR OPERATION • TRANSITION FREQUENCY 42GHz • ULTRA MINIATURE SOT343 SC70 PACKAGE SOT343 (SC70) ORDER CODE START499TR DESCRIPTION START499 is a product of the START family that


    Original     		START499 42GHz OT343 START499TR START499 OT343 transistor C640 transistor c640 npn c640 transistor rc 3150 930E-15 573E SPICE PARAMETER, STMicroelectronics, bipolar transistor PDF

    transistor C640

    Abstract: transistor c640 npn c640 transistor START499 START499TR transistor bf 171
    Text: START499 NPN Silicon RF Transistor • HIGH EFFICIENCY • HIGH GAIN • LINEAR AND NON LINEAR OPERATION • TRANSITION FREQUENCY 42GHz • ULTRA MINIATURE SOT343 SC70 PACKAGE SOT343 (SC70) ORDER CODE START499TR DESCRIPTION START499 is a product of the START family that


    Original     		START499 42GHz OT343 START499TR START499 OT343 transistor C640 transistor c640 npn c640 transistor START499TR transistor bf 171 PDF