RF TRANSISTOR 2GHZ Search Results

RF TRANSISTOR 2GHZ Result Highlights (5)

Part	Manufacturer	Description
LBAA0QB1SJ-295	Murata Manufacturing Co Ltd	SX1262 MODULE WITH OPEN MCU
GRM-KIT-OVER100-DE-D	Murata Manufacturing Co Ltd	0805-1210 over100uF Cap Kit
LBUA5QJ2AB-828	Murata Manufacturing Co Ltd	QORVO UWB MODULE
LXMSJZNCMH-225	Murata Manufacturing Co Ltd	Ultra small RAIN RFID chip tag
LXMS21NCMH-230	Murata Manufacturing Co Ltd	Ultra small RAIN RFID chip tag

RF TRANSISTOR 2GHZ Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IRL19 Abstract: No abstract text available Text: T1L2003028-SP 30 W, 28V, 500 MHz—2 GHz, PowerbandTM LDMOS RF Power Transistor Introduction The T1L2003028-SP is a POWERBANDTM discrete LDMOS, enhancement mode RF Power transistor designed to operate from 500MHz to 2GHz in wide-band circuits. The device has an	Original	T1L2003028-SP 500MHz 30watts 45Watts 500MHz-2GHz IRL19	PDF
transistor B 764 Abstract: 952625 FCD50 74386 P1D8 pHEMT transistor 360 transistor di 960 T1P3002028-SP powerband N4030 Text: TriQuint It TM PO W ER BAN D SEMICONDUCTOR T1P3002028-SP 30W, 28V, 500 MHz-2 GHz, Pulsed, Powerband pHEMT RF Power Transistor Introduction The T1P3002028-SP is a POWERBAND™ discrete pHEMT, depletion mode RF Power Transistor designed to operate from 500MHz to 2GHz in wide-band circuits.	OCR Scan	T1P3002028-SP T1P3002028-SP 500MHz 30watts transistor B 764 952625 FCD50 74386 P1D8 pHEMT transistor 360 transistor di 960 powerband N4030	PDF
RF POWER TRANSISTOR Abstract: T1P3002028-SP transistor jc 817 Text: T1P3002028-SP 20 W, 28V, 500 MHz—2GHz, Pulsed, PowerbandTM pHEMT RF Power Transistor Introduction The T1P3002028-SP is a POWERBANDTM discrete pHEMT, depletion mode, RF Power transistor designed to operate from 500MHz to 2GHz in wide-band circuits. The device has an instantaneous band-width P1dB output power of 20watts across	Original	T1P3002028-SP 500MHz 20watts 26Watts 26Watt RF POWER TRANSISTOR transistor jc 817	PDF
transistor B 764 Abstract: P1D8 179502 P3003 T1P3003028-SP 012673 0823838 Text: TriQuint It TM PO W ER B A N D SEMICONDUCTOR T1P3003028-SP 30W, 28V, 500 MHz-2 GHz, Pulsed, Powerband pHEMT RF Power Transistor Introduction The T1P3003028-SP is a POWERBAND™ discrete pHEMT, depletion mode RF Power Transistor designed to operate from 500MHz to 2GHz in wide-band circuits.	OCR Scan	T1P3003028-SP T1P3003028-SP 500MHz 30watts transistor B 764 P1D8 179502 P3003 012673 0823838	PDF
transistor 746 Abstract: No abstract text available Text: T1P3003028-SP 30 W, 28V, 500 MHz—2GHz, Pulsed, PowerbandTM pHEMT RF Power Transistor Introduction The T1P3003028-SP is a POWERBANDTM discrete pHEMT, depletion mode, RF Power transistor designed to operate from 500MHz to 2GHz in wide-band circuits. The device has an instantaneous band-width P1dB output power of 30watts across	Original	T1P3003028-SP 500MHz 30watts 40Watts 40Watt transistor 746	PDF
pHEMT transistor 360 Abstract: "RF Power Transistor" T1P3005028-SP Text: T1P3005028-SP 50 W, 28V, 500 MHz—2GHz, Pulsed, PowerbandTM pHEMT RF Power Transistor Introduction The T1P3005028-SP is a POWERBANDTM discrete pHEMT, depletion mode, RF Power transistor designed to operate from 500MHz to 2GHz in wide-band circuits. The device has an instantaneous band-width P1dB output power of 50watts across	Original	T1P3005028-SP T1P3005028-SP 500MHz 50watts 65Watts 65Watt pHEMT transistor 360 "RF Power Transistor"	PDF
Untitled Abstract: No abstract text available Text: SGA9189Z SGA9189Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9189Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 =39dBm, and P1dB =25.5dBm. This RF	Original	SGA9189Z OT-89 SGA9189Z 39dBm, SGA9189Zâ SGA9189ZSQ SGA9189ZSR	PDF
sga9189z Abstract: marking p1z SGA-9189Z marking p1z transistor Text: SGA9189Z SGA9189Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9189Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 =39dBm, and P1dB =25.5dBm. This RF	Original	SGA9189Z SGA9189Z OT-89 39dBm, SGA9189Z" SGA9189ZSQ SGA9189ZSR marking p1z SGA-9189Z marking p1z transistor	PDF
BFQ591 Abstract: RF POWER TRANSISTOR NPN RF NPN POWER TRANSISTOR 3 GHZ RF TRANSISTOR DIN45004B high gain low capacitance NPN transistor TRANSISTOR FQ 1ghz npn power 700 v power transistor Text: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor BFQ591 DESCRIPTION •High Power Gain ·High Current Gain Bandwidth Product ·Low Noise Figure APPLICATIONS ·Designed for use in MATV or CATV amplifiers and RF communications subscribers equipment.	Original	BFQ591 S21e2 DIN45004B) BFQ591 RF POWER TRANSISTOR NPN RF NPN POWER TRANSISTOR 3 GHZ RF TRANSISTOR DIN45004B high gain low capacitance NPN transistor TRANSISTOR FQ 1ghz npn power 700 v power transistor	PDF
T1P3005028-SP Abstract: 50w transistor RF power transistor Text: TriQuint It TM PO W ER B A N D SEMICONDUCTOR T1P3005028-SP 50W, 28V, 500 MHz-2 GHz, Pulsed, Powerband pHEMT RF Power Transistor Introduction Table 1. M axim um Ratings Sym The T1P3005028-SP is a POWERBAND™ discrete pHEMT, depletion mode RF Power Transistor designed	OCR Scan	T1P3005028-SP T1P3005028-SP 500MHz 50watts 50w transistor RF power transistor	PDF
TRANSISTOR 185 Abstract: Ericsson RF POWER TRANSISTOR Text: ERICSSON ^ PTE 20124* 40 Watts, 1.465-1.513 GHz Cellular Radio RF Power Transistor Description The 20124 is an NPN common emitter RF power transistor intended for 26 Vdc class AB operation from 1.45 to 1.52 GHz. Rated at 40 watts minimum output power, it is specifically intended for cellular	OCR Scan	BAV99 TRANSISTOR 185 Ericsson RF POWER TRANSISTOR	PDF
RF NPN POWER TRANSISTOR 3 GHZ Abstract: Collector 5v npn TRANSISTOR RF TRANSISTOR 3 w RF POWER TRANSISTOR NPN RF POWER TRANSISTOR NPN transistor BFR93A 30ma 40v npn BFR93A NPN RF Transistor RF TRANSISTOR 1.5 GHZ Text: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor BFR93A DESCRIPTION •High Power Gain ·High Current Gain Bandwidth Product ·Low Noise Figure APPLICATIONS ·Designed for use in RF wideband amplifiers and oscillators. ABSOLUTE MAXIMUM RATINGS Ta=25℃	Original	BFR93A RF NPN POWER TRANSISTOR 3 GHZ Collector 5v npn TRANSISTOR RF TRANSISTOR 3 w RF POWER TRANSISTOR NPN RF POWER TRANSISTOR NPN transistor BFR93A 30ma 40v npn BFR93A NPN RF Transistor RF TRANSISTOR 1.5 GHZ	PDF
Collector 5v npn TRANSISTOR Abstract: high gain low capacitance NPN transistor transistor RF TRANSISTOR 1.5 GHZ BFR93AW rf transistor high gain low voltage NPN transistor NPN RF Transistor 15 w RF POWER TRANSISTOR NPN 30ma 40v npn Text: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor BFR93AW DESCRIPTION •High Power Gain ·High Current Gain Bandwidth Product ·Low Noise Figure APPLICATIONS ·Designed for use in RF amplifiers ,mixers and oscillators with signal frequencies up to 1 GHz.	Original	BFR93AW Collector 5v npn TRANSISTOR high gain low capacitance NPN transistor transistor RF TRANSISTOR 1.5 GHZ BFR93AW rf transistor high gain low voltage NPN transistor NPN RF Transistor 15 w RF POWER TRANSISTOR NPN 30ma 40v npn	PDF
transistor Bf 981 Abstract: transistor BF 257 Transistor 0235 BF bf 671 transistor BF 236 transistor bf 324 BF 273 transistor BF775 transistor marking zg bf 695 Text: BF 775 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to 2GHz especially for wide band antenna amplifier mixers and oscillators in TV-sat-tuners. Features D High power gain D Low noise figure D High transition frequency	Original	BF775 D-74025 transistor Bf 981 transistor BF 257 Transistor 0235 BF bf 671 transistor BF 236 transistor bf 324 BF 273 transistor transistor marking zg bf 695	PDF

15 w RF POWER TRANSISTOR NPN Abstract: RF NPN POWER TRANSISTOR 2.5 GHZ high gain low capacitance NPN transistor BFR520 transistor RF TRANSISTOR RF NPN POWER TRANSISTOR 3 GHZ RF frontend RF POWER TRANSISTOR NPN RF TRANSISTOR 1.5 GHZ BFR520 Text: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor BFR520 DESCRIPTION •High Power Gain ·High Current Gain Bandwidth Product ·Low Noise Figure APPLICATIONS ·Designed for RF frontend in wideband applications in the GHz range,such as analog and digital cellular telephones,	Original	BFR520 900MHz S21e2 15 w RF POWER TRANSISTOR NPN RF NPN POWER TRANSISTOR 2.5 GHZ high gain low capacitance NPN transistor BFR520 transistor RF TRANSISTOR RF NPN POWER TRANSISTOR 3 GHZ RF frontend RF POWER TRANSISTOR NPN RF TRANSISTOR 1.5 GHZ BFR520	PDF
Untitled Abstract: No abstract text available Text: e PTB 20170 30 Watts, 1.8–2.0 GHz Cellular Radio RF Power Transistor Description The 20170 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 30 watts minimum output power, it may be used for both CW and PEP	Original	G-200, 1-877-GOLDMOS 1301-PTB	PDF
Untitled Abstract: No abstract text available Text: ERICSSON ^ PTB 20170 30 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor Description The 20170 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 30 watts minimum output power, it may be used for both CW and PEP	OCR Scan	Curre195 G-200, BCP56 BAV99	PDF
Untitled Abstract: No abstract text available Text: Temic BF 775 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to 2GHz especially for wide band antenna amplifier mixers and oscillators in TV-sat-tuners. Features • • • High power gain Low noise figure High transition frequency	OCR Scan	BF775 6R200Rb 00127E0 BF775	PDF
SMT resistor Abstract: TRANSISTOR 185 Text: e PTB 20170 30 Watts, 1.8–2.0 GHz Cellular Radio RF Power Transistor Description The 20170 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 30 watts power output, it may be used for both CW and PEP applications. Ion	Original	G-200, 1-877-GOLDMOS 1301-PTB SMT resistor TRANSISTOR 185	PDF
Untitled Abstract: No abstract text available Text: Te m ic BF 775 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to 2GHz especially for wide band antenna amplifier mixers and oscillators in TV-sat-tuners. Features • • • High power gain Low noise figure High transition frequency	OCR Scan	BF775 SyS22 BF775	PDF
BFP81 Abstract: No abstract text available Text: BFP81 Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to 2 GHz, especially for mobile telephone. Features D Small feedback capacitance D Low noise figure	Original	BFP81 BFP81 D-74025 20-Jan-99	PDF
E20124 Abstract: E201 G200 Ericsson RF POWER TRANSISTOR RF Transistor 1500 MHZ 1301P Text: e E S A E PTE 20124* L E -R E 40 Watts, 1.465–1.513 GHz R P Cellular Radio RF Power Transistor Description The 20124 is an NPN common emitter RF power transistor intended for 26 Vdc class AB operation from 1.45 to 1.52 GHz. Rated at 40 watts minimum output power, it is specifically intended for cellular	Original	150pF 1-877-GOLDMOS 1301-PTE E20124 E201 G200 Ericsson RF POWER TRANSISTOR RF Transistor 1500 MHZ 1301P	PDF
BFQ81 Abstract: No abstract text available Text: BFQ81 Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to 2 GHz, especially for mobile telephone. Features D Small feedback capacitance D Low noise figure	Original	BFQ81 BFQ81 D-74025 20-Jan-99	PDF
BF775 Abstract: No abstract text available Text: BF775 Silicon NPN Planar RF Transistor Applications RF-amplifier up to 2GHz especially for wide band antenna amplifier mixers and oscillators in TV-sat-tuners. Features D High power gain D Low noise figure D High transition frequency 1 2 3 94 9280 BF775 Marking: 775	Original	BF775 BF775 D-74025 15-Apr-96	PDF

RF TRANSISTOR 2GHZ Search Results

RF TRANSISTOR 2GHZ Result Highlights (5)

RF TRANSISTOR 2GHZ Datasheets Context Search

IRL19

transistor B 764

RF POWER TRANSISTOR

transistor B 764

transistor 746

pHEMT transistor 360

Untitled

sga9189z

BFQ591

T1P3005028-SP

TRANSISTOR 185

RF NPN POWER TRANSISTOR 3 GHZ

Collector 5v npn TRANSISTOR

transistor Bf 981

15 w RF POWER TRANSISTOR NPN

Untitled

Untitled

Untitled

SMT resistor

Untitled

BFP81

E20124

BFQ81

BF775