Untitled
Abstract: No abstract text available
Text: IMAGE REJECT/SSB MIXER MODEL 9240-31 Guaranteed Specifications Parameter Outline Drawing Limits Frequency RF – LO 390 MHz to 410 MHz 8 10.7 ± 1 kHz 9 Frequency IF LO Power USB LSB 7 .020 6 typ +10 dBm to +13 dBm 10 5 Conversion Loss 8.0 dB 11 4 LO – RF Isolation
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MIL-STD-202
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grm426x7
Abstract: No abstract text available
Text: DB-55003L-512 RF POWER AMPLIFIER using 1x PD55003L-512 The LdmoST FAMILY General Features • EXCELLENT THERMAL STABILITY ■ FREQUENCY: 410 -512 MHz ■ SUPPLY VOLTAGE: 12.5V ■ OUTPUT POWER: > 3W ■ POWER GAIN: 15.8 +/-1.2dB ■ EFFICIENCY: 50% - 57% ■
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DB-55003L-512
PD55003L-512
DB-55003L-512
grm426x7
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Untitled
Abstract: No abstract text available
Text: Catalog 1307191 Revised 10-00 RF Coax Connectors 3.5 mm Blind Mate Connectors Bulkhead Plug 2-Hole Panel Plug 2.74 ±0.05 Dia. [.108 ±.002 ] 2 Holes 9.91 ±0.05 Dia. [.390 ±.002 ] 14.22 ±0.1 [.560 ±.004 ] 19.05 [.750] 10.41 [.410] Dia. 11.68 Dia. [.460]
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512 smd resistors
Abstract: SMD DIODE 512 SMD package mark code C9 BZX284C5V1 DB-55003L-512 EEVHB1V100P EXCELDRC35C GRM426C0G102J50 GRM426C0G121J50 GRM426X7R104K50
Text: DB-55003L-512 RF POWER AMPLIFIER using 1x PD55003L-512 The LdmoST FAMILY General Features • EXCELLENT THERMAL STABILITY ■ FREQUENCY: 410 -512 MHz ■ SUPPLY VOLTAGE: 12.5V ■ OUTPUT POWER: > 3W ■ POWER GAIN: 15.8 +/-1.2dB ■ EFFICIENCY: 50% - 57% ■
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DB-55003L-512
PD55003L-512
DB-55003L-512
512 smd resistors
SMD DIODE 512
SMD package mark code C9
BZX284C5V1
EEVHB1V100P
EXCELDRC35C
GRM426C0G102J50
GRM426C0G121J50
GRM426X7R104K50
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Untitled
Abstract: No abstract text available
Text: Key Parameters VRRM = 4500 IFAVM = 410 IFRMS = 650 IFSM = 16 VF0 = 2.5 rF = 4.1 VDClink = 2800 Fast Recovery Diode for GCT applications V A A kA V mΩ V 5SDF 05F4502 PRELIMINARY Doc. No. 5SYA 1120-01 July 98 Features • Patented free-floating silicon technology
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05F4502
CH-5600
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UMJ-410-D14-G
Abstract: No abstract text available
Text: VCO Product Specification Model: UMJ-410-D14-G Rev: A Date: 5/25/2010 Customer: RF MICRO DEVICES Operating Temperature Range: -40 ° to 85 ° C RoHS Compliant Parameter Min Frequency Range - 105 Tuning Voltage - 0.5 Typ Max Units X 120 MHz X 4.5 Tuning Sensitivity -
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UMJ-410-D14-G
2002/95/EC
UMJ-410-D14-G
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1501-61K
Abstract: rf 1501 335 35K 1501-01K 1501 marking 1501 1501-17 1501-35K 1501-50k 150110K
Text: 1501 RF MOLDED CHOKES, SHIELDED .025 ± .002 0.635 ± 0.05 .410 ± .020 .162 ± .010 (10.41 ± 0.5) (4.11 ± 0.25) 2.520 ± .078 (64.0 ± 2.0) Part No. 1501-01K 1501-02K 1501-03K 1501-04K 1501-05K 1501-06K 1501-07K 1501-08K 1501-09K 1501-10K 1501-11K 1501-12K
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1501-01K
1501-02K
1501-03K
1501-04K
1501-05K
1501-06K
1501-07K
1501-08K
1501-09K
1501-10K
1501-61K
rf 1501
335 35K
1501-01K
1501
marking 1501
1501-17
1501-35K
1501-50k
150110K
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SXBP-425
Abstract: No abstract text available
Text: Surface Mount Bandpass Filter 410 to 440 MHz Maximum Ratings Features -40oC to 85oC Operating Temperature o Storage Temperature o -55 C to 100 C RF Power Input 0.5W Max Pin Connections INPUT OUTPUT GROUND 1 8 2, 3, 4, 5, 6, 7 • • • • • Linear Phase, up to ±6 deg typical @ Fc ± 15 MHz
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-40oC
SXBP-425+
HF1139
2002/95/EC)
SXBP-425
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RF-410 CH
Abstract: 440 485 CV210-203A CV210-203AF CV210-2AF JESD22-A114 425 rf
Text: CV210-203A The Communications Edge TM 410 – 485 MHz Dual-Branch Downconverter GND GND IF1 OUTPUT GND MIXER IF/RF1 AMP1 INPUT GND 27 26 25 24 23 22 RF/IF 21 BIAS GND 2 20 GND IF Amp 1 BIAS 3 19 N/C GND 4 18 GND N/C 5 LPF GND 6 N/C 7 LO Driver Amp 17 LO IF Amp 2
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CV210-203A
1-800-WJ1-4401
RF-410 CH
440 485
CV210-203A
CV210-203AF
CV210-2AF
JESD22-A114
425 rf
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RD01MUS2
Abstract: RD07MUS2B GRM2162C1H101GD01E GRM2162C1H120GD01E GRM2162C1H200GD01E GRM2162C1H220GD01E GRM2162C1H390GD01E GRM2162C1H8R0DD01E rpc05 2306C
Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-097-B Date : 13th Mar. 2009 Rev. Date :22th Jun. 2010 Prepared : Y.Takase S.Kametani Confirmed :T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics RD01MUS2 & RD07MUS2B RF characteristics data at f=400-470MHz,Vdd=7.2V
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AN-UHF-097-B
RD01MUS2
RD07MUS2B
400-470MHz
RD07MUS2B
086ZE-G"
470MHz
AN-UHF-097-B-
RD01MUS2
GRM2162C1H101GD01E
GRM2162C1H120GD01E
GRM2162C1H200GD01E
GRM2162C1H220GD01E
GRM2162C1H390GD01E
GRM2162C1H8R0DD01E
rpc05
2306C
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4538 equivalent
Abstract: adj 2576 RD07MVS1 ire 530 AN-UHF-027-C
Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-027-C Date : 16th Oct. 2003 Rev.date : 7th Jan. 2010 Prepared : M.Wada S.Kametani Confirmed : T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD07MVS1 RF characteristics data
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AN-UHF-027-C
RD07MVS1
RD07MVS1.
RD07MVS1:
031AA"
450-520MHz
450-520MHz)
4538 equivalent
adj 2576
ire 530
AN-UHF-027-C
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AN-UHF-027-B
Abstract: RD07MVS1 adj 2576 6926 b 946 MITSUBISHI APPLICATION NOTE RF POWER mitsubishi 5247
Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-027-B Date : 16th Oct. 2003 Prepared : M.Wada S.Kametani Confirmed : T.Ohkawa RD07MVS1 RF characteristics data SUBJECT: SUMMARY: This application note show the RF Wide band DUT characteristics data Po vs. Frequency
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AN-UHF-027-B
RD07MVS1
RD07MVS1.
RD07MVS1:
031AA"
450-520MHz
AN-UHF-027-B
450-520MHz)
adj 2576
6926 b 946
MITSUBISHI APPLICATION NOTE RF POWER
mitsubishi 5247
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TRANSISTOR T 410
Abstract: abf410 DSG52 922S BF410D 410c BF410A BF410C Q68000-A5172 Q68000-A5174
Text: 25C D • fl23SbQS 000447*1 1 ■ S I E G . T'-'il-zS' Low-Noise N-channel Junction Field-Effect Transistor for RF Applications D 79 BF 410 A BF 410 B BF 410 C BF 410 D SIEMENS AKTIENGESELLSCHAF BF 4 1 0 A, B, C, and D are asymmetric epitaxial planar N-channel junction field-effect
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fl235bOS
Q68000-A5440
Q68000-A5172
Q68000-A5173
Q68000-A5174
Q68000-A5175
BF410B
Vbs-10V
0G04MÃ
BF410D
TRANSISTOR T 410
abf410
DSG52
922S
BF410D
410c
BF410A
BF410C
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Untitled
Abstract: No abstract text available
Text: LF-410/LF-422 Wideband RF/Pulse Transformers .01-100 MHz/,01-80 MHz micaooevieis GUARANTEED MINIMUM PERFORMANCE DATA TYPICAL PERFORMANCE LF-410 SPECIFICATIONS FOR MODEL LF-410 Type: 50 ohm unbalanced 50 ohm balanced symm. - 1 dB Bandwidth, MHz Midband insertion loss dB
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LF-410/LF-422
LF-410
LF-422
MIL-STD-202E.
MIL-STD-202E
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LF-422
Abstract: LF-410 107D 204C 213B lf 422 BO 635 lf422
Text: LF-410/LF-422 Wideband RF/Pulse Transformers .01-100 MHz/,01-80 MHz UIICRBOfVICeS GUARANTEED MINIMUM PERFORMANCE DATA TYPICAL PERFORMANCE LF-410 SPECIFICATIONS FOR MODEL LF-410 Type: 50 ohm unbalanced 50 ohm balanced symm. - 1 dB Bandwidth, MHz Midband insertion loss dB
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LF-410/LF-422
MIL-T-55631
LF-410
MIL-STD-202E
LF-422
QQ-S-365A,
760-MAX
LF-422
LF-410
107D
204C
213B
lf 422
BO 635
lf422
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107D
Abstract: 204C 213B LF-410 LF-422
Text: LF-410/LF-422 Wideband RF/Pulse Transformers .01-100 MHz/,01-80 MHz Lz mM £M cnoofvicis GUARANTEED MINIMUM PERFORMANCE DATA TYPICAL PERFORMANCE LF-410 SPECIFICATIONS FOR MODEL LF-410 Type: 50 ohm unbalanced 50 ohm balanced symm. - 1 dB Bandwidth, MHz Midband insertion loss dB
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LF-410/LF-422
MIL-T-55631
LF-410
MIL-STD-202E
LF-410
LF-422
QQ-S-365A,
760-MAX
107D
204C
213B
LF-422
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107D
Abstract: 204C 213B LF-410 LF-422
Text: LF-410/LF-422 Wideband RF/Pulse Transformers .01-100 MHz/,01-80 MHz SIMMS' m cnoofvicis GUARANTEED MINIMUM PERFORMANCE DATA TYPICAL PERFORMANCE LF-410 SPECIFICATIONS FOR MODEL LF-410 Type: 50 ohm unbalanced 50 ohm balanced symm. - 1 dB Bandwidth, MHz Midband insertion loss dB
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LF-410/LF-422
MIL-T-55631
LF-410
MIL-STD-202E
LF-410
LF-422
QQ-S-365A,
760-MAX
107D
204C
213B
LF-422
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MCL SRA-1
Abstract: No abstract text available
Text: .Y MODEL DOUBLE BALANCED MIXER MD-410 RF, LO 0.5-500 MHz IF D C -500 MHz LO Power +7 dBm Typical Midband Conversion Loss of 5.5 dB MCL Model SRA-1 Replacement Guaranteed Specifications* From -54°C to +85°C _ Frequency Range RF, LO Ports
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MD-410
MCL SRA-1
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410-430MHz
Abstract: M57716M
Text: MITSUBISHI RF POWER MODULE M57716M Silicon Bipolar Power Amplifier for 410-430MHz 13W Digital Mobile MAXIMUM RATINGS Tc=25deg C UNLESS OTHERWISE NOTED SYMBOL PARAMETER SUPPLY VOLTAGE VCC BIAS VOLTAGE VBB INPUT POWER Pin OUTPUT POWER Po Tc(OP) OPERATION CASE TEMPERATURE
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M57716M
410-430MHz
25deg
410-430MHz,
M57716M
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Untitled
Abstract: No abstract text available
Text: .410 MAX. 10.41 MAX. 1206 RF .0 2 5 1 .0 0 2 - i (0 .6 3 5 1 0 ,0 5 ) I COATED CHOKES <nn> .175 MAX. (4.44 MAX.) 2 .5 2 1 .0 7 8 INCH (METRIC) (6 4 .0 1 2 .0 ) P a r t No. 1206R10M 1206R12M 1206R15M 1206R18M 1206R22M 1206R27M 1206R33M 1206R39M 1206R47M 1206R56M
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1206R10M
1206R12M
1206R15M
1206R18M
1206R22M
1206R27M
1206R33M
1206R39M
1206R47M
1206R56M
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zo 410 me
Abstract: St ZO 410 t9404
Text: 356 1 .25 MIN I .25 WIN , 340 ~ l I . 2 0 0 . 394 I .200 I_ .018 I .001/- =LJ .410 J .005 .002 .001 l_ CIRCUIT DIMENSIONS USED 5CHEMATIC TOL ERANCES UNLESS OTHERWISE 1NCH E S MILLIMETRES X I NCHES PROJECTION rf^ REMOVE ALL ONE P L A C E TWO P L A C E THREE P L A C E
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37V62
3O-APL-93
zo 410 me
St ZO 410
t9404
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Untitled
Abstract: No abstract text available
Text: .410 1 ,0 2 0 10.41± 0.5 .0 2 5 1 .0 0 2 —| (0 .6 3 5 1 0 ,0 5 ) I 1 5 0 1 RF MOLDED CHOKES, SHIELDED mm- • 162±-010 (4.11± 0.25) 2 .5 2 0 1 .0 7 8 INCH (METRIC) (6 4 .0 1 2 .0 ) P o rt No. 1501-01K 1501-0 2 K 1501-03K 1501-0 4 K 1501-05K 1501-06K
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1501-01K
1501-03K
1501-05K
1501-06K
1501-07K
1501-08K
1501-09K
1501-1TK
1501-12K
1501-13K
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ECG1405
Abstract: GOGS403
Text: 17 E D • PHILIPS E C G INC ECG btiSBTSâ □□GS40 S 7 ECG1405 T -7 7 -0 7 -Ì3 TV Video Amp S e m ic o n d u c to rs n n n n n n n n r t n n • A FT • AQC • RF AQC .374 9 .5 M AX T .410 K (10.4) ) MAX F a U U U L f 'U U U U LI U -ET I.I4"129.0)M A X —
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GS40S
T-77-07-Ã
ECG1405
GOGS403
T-77-Ã
ECG1405
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k1206 220 r3
Abstract: No abstract text available
Text: ERICSSON PTE 10048* 30 Watts, 2.1-2.2 GHz LDMOS Field Effect Transistor Description The 10048 is an internally matched common source N-channel en hancement-mode lateral MOSFET intended for large signal amplifier applications from 2.1 to 2.2 GHz. It is rated at 30 watts power output.
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K1206
K1206
1-877-GOLDMOS
1301-PTE
k1206 220 r3
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