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Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: RF3095 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)22 V(BR)CBO (V) I(C) Max. (A)0.4 Absolute Max. Power Diss. (W) Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A)250u @V(CBO) (V) (Test Condition)28	Original	RF3095	PDF
RF3094 Abstract: RF3096 RF3095 Text: MOTOROLA SC XSTRS/R F MOTOROLA SEMICONDUCTOR Mb E D • b3b?254 OG^bflS T 3 1 - 2 3 I I M0 T b Order this data sheet by RF3094/D a TECHNICAL DATA RF3094 RF3095 RF3096 The RF Line M ic ro w a v e Linear P ow er	OCR Scan	RF3094/D RF3094 RF3095 RF3096 RF3094 RF3095 RF3096	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line M icrow ave Linear Pow er Transistor M RF3095 Designed for Class A, common emitter linear power amplifiers. • Specified 20 Volt, 1.6 GHz Characteristics Output Power — 0.5, 0.8, 1.6 Watts Gain — 9 .0 -1 2 dB	OCR Scan	RF3095 28A-03, MRF3095	PDF
Motorola transistors MRF 947 Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that	OCR Scan	2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp	PDF
2N4427 equivalent bfr91 Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239 Text: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability	OCR Scan	PoweS3666 MRF3866 2N2857 2N3866 2N5943 MRF904 MRF571 2N4958 2N3160 2N5583 2N4427 equivalent bfr91 bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239	PDF
A5 GNE mosfet Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA	OCR Scan	1PHX11136Q-14 A5 GNE mosfet jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor	PDF
F3096 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF3094 RF3095 MRF3096 Microwave Linear Power Transistors Designed for Class A, com mon emitter linear power amplifiers. • Specified 20 Volt, 1.6 GHz Characteristics Output Power — 0.5, 0.8, 1.6 Watts	OCR Scan	MRF3094 MRF3095 MRF3096 MRF3096 F3096 F3096	PDF