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    RF35 BOARD 30MIL Search Results

    RF35 BOARD 30MIL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MYC0409-NA-EVM Murata Manufacturing Co Ltd 72W, Charge Pump Module, non-isolated DC/DC Converter, Evaluation board Visit Murata Manufacturing Co Ltd
    SCR410T-K03-PCB Murata Manufacturing Co Ltd 1-Axis Gyro Sensor on Evaluation Board Visit Murata Manufacturing Co Ltd
    SCC433T-K03-PCB Murata Manufacturing Co Ltd 2-Axis Gyro, 3-axis Accelerometer combination sensor on Evaluation Board Visit Murata Manufacturing Co Ltd
    LBUA5QJ2AB-828EVB Murata Manufacturing Co Ltd QORVO UWB MODULE EVALUATION KIT Visit Murata Manufacturing Co Ltd
    C403 Coilcraft Inc Designer's Kit, 0402HP chip inductors, 5% tol, RoHS, halogen-free Visit Coilcraft Inc

    RF35 BOARD 30MIL Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    PIMD3

    Abstract: No abstract text available
    Text: NPT35050A Gallium Nitride 28V, 65W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other applications from 3300 – 3800 MHz • 90W P3dB PEP power • 65W P3dB CW power


    Original     		NPT35050A 3A001b 750mA, NDS-003 PIMD3 PDF

    PIMD3

    Abstract: No abstract text available
    Text: NPT35050A Gallium Nitride 28V, 65W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other applications from 3300 – 3800 MHz • 90W P3dB PEP power • 65W P3dB CW power


    Original     		NPT35050A 3A001b 750mA, NDS-003 PIMD3 PDF

    PIMD3

    Abstract: No abstract text available
    Text: NPT35050A Gallium Nitride 28V, 65W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other applications from 3300 – 3800 MHz • 90W P3dB PEP power • 65W P3dB CW power


    Original     		NPT35050A 3A001b 750mA, NPT35050A NDS-003 PIMD3 PDF

    RF35 board 30mil

    Abstract: LT1964-BYP nichicon pw NPT35050A 20k ohm potentiometer Nichicon se Theta-J EAR99 JESD22-A114 JESD22-A115
    Text: NPT35050A Datasheet Gallium Nitride 28V, 50W High Electron Mobility Transistor NPT35050A Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Si technology. FEATURES • Designed for 3.3-3.8 GHz WiMAX applications. • Typical OFDM performance at VDD = 28 Volts, IDQ =


    Original     		NPT35050A NPT35050A 64-QAM RF35 board 30mil LT1964-BYP nichicon pw 20k ohm potentiometer Nichicon se Theta-J EAR99 JESD22-A114 JESD22-A115 PDF