RFL1N20 Search Results

RFL1N20 Datasheets (10)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
RFL1N20		Intersil	1A, 180V and 200V, 3.65 ?, N-Channel Power MOSFETs		Original	PDF
RFL1N20		General Electric	N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V,		Scan	PDF
RFL1N20		Harris Semiconductor	Power MOSFET Data Book 1990		Scan	PDF
RFL1N20		International Rectifier	RF and BUZ Series Power MOSFETs - N-Channel		Scan	PDF
RFL1N20		Unknown	Semiconductor Master Cross Reference Guide		Scan	PDF
RFL1N20		Unknown	Shortform Datasheet & Cross References Data		Short Form	PDF
RFL1N20L		Harris Semiconductor	1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs		Original	PDF
RFL1N20L		General Electric	N-channel logic level power field-effect transistor (LL FET). 200V, 1A.		Scan	PDF
RFL1N20L		Harris Semiconductor	Power MOSFET Data Book 1990		Scan	PDF
RFL1N20L		Unknown	Shortform Datasheet & Cross References Data		Short Form	PDF

RFL1N20 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
reverse bias diode characterstics Abstract: rfl1n18 AN7254 AN7260 RFL1N20 TB334 Text: RFL1N18, RFL1N20 Semiconductor 1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 1A, 180V and 200V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such	Original	PDF	RFL1N18, RFL1N20 TA09289. 25VDSS AN7254 AN7260. reverse bias diode characterstics rfl1n18 AN7260 RFL1N20 TB334
Untitled Abstract: No abstract text available Text: RFL1N18, RFL1N20 S E M I C O N D U C T O R 1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 1A, 180V and 200V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such	Original	PDF	RFL1N18, RFL1N20 TA09289. TB334 75VDSS 50VDSS 25VDSS AN7254 AN7260.
SKIIP 33 nec 125 t2 Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302 Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.	Original	PDF	734TL UWEB-MODEM-34 HCS412/WM TLV320AIC10IPFB 100MB NEON250 GA-60XM7E BLK32X40 BLK32X42 SKIIP 33 nec 125 t2 skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
Untitled Abstract: No abstract text available Text: 2} H a rris RFL1N18 RFL1N20 N-Channel Enhancem ent-M ode Power Field-Effect Transistors August 1991 F eatures P ackage T 0 -2 0 5 A F B O TT O M VIEW • 1A, 180V and 200V • rQs on = 3.65ft • S O A is Power-Dissipation Limited GATE SOURCE • Nanosecond Switching Speeds	OCR Scan	PDF	RFL1N18 RFL1N20 AN-7260. 92CS-36090
Untitled Abstract: No abstract text available Text: • M3DE571 005 471b 5T1 HAS RFL1N18L RFL1N20L HARRIS August 1991 N-Channel Logic Level Power Field-Effect Transistors L2FET Package Features TO-2Û5AF • 1A, 180V and 200V BOTTOM VIEW • rDS(ON) = 3.65H • Design Optimized for 5V Gate Drives GATE SOURCE	OCR Scan	PDF	M3DE571 RFL1N18L RFL1N20L RFL1N18L RFL1N20L 92CS-373I2 92CS-36090
Untitled Abstract: No abstract text available Text: W vys S RFL1N18, RFL1N20 S e m ico n d ucto r 7 1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs January 1998 Description Features 1A, 180V and 200V Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such	OCR Scan	PDF	RFL1N18, RFL1N20 TA09289. AN7254 AN7260.
1S11 Abstract: RFL1N18 RFL1N20 RFP2N18 RFP2N20 Text: 3875081 G E SOLID STATE Qi DETl3ö75Dfll ODlfllDS 1 Standard Pow er M O S F E T s _ • _ ■ RFL1N18, RFL1N20, RFP2N18, RFP2N20 File N u m b e r ' 1442 N-Channel Enhancement-Mode Power Field-Effect Transistors	OCR Scan	PDF	75Dfll RFL1N18, RFL1N20, RFP2N18, RFP2N20 RFL1N18 RFL1N20and RFP2N18and 1S11 RFL1N20 RFP2N18
DIODE N20 Abstract: No abstract text available Text: RFL1N18, RFL1N20 HARRIS S E M I C O N D U C T O R 1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 1 A, 180V and 200V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such	OCR Scan	PDF	RFL1N18, RFL1N20 TA09289. AN7260. RFL1N20 DIODE N20
RFL1N20L Abstract: RFP2N20L RFL1N18L RFP2N18L Text: ]>ËÏ 3Ô7SDS1 DD1Ö435 5 T ~ D T “3 ? ' 0 9 '3875081 G E SOLID STATELO! Logic-Level Power MOSFETs _ 5 !_ RFL1N18L, RFL1N20L, RFP2N18L, RFP2N20L File Number 1511 N-Channel Logic Level Power Field-Effect Transistors L2 FET	OCR Scan	PDF	307SG01 RFL1N18L, RFL1N20L, RFP2N18L, RFP2N20L RFL1N18L RFL1N20L RFP2N18L
1n20 Abstract: RFP2N18 rfl1n18 RFL1N20 RFP2N20 TA9290 TA9289 Text: Standard Power MOSFETs RFL1N18, RFL1N20, RFP2N18, RFP2N20 F ile N u m b e r 1442 N-Channel Enhancement-Mode Power Field-Effect Transistors 1 and 2 A, 180 and 200 V rD s on : 3.50 and 3.650 Features: • a ■ ■ ■ SO A is p o w e r-d is s ip a tio n lim ite d	OCR Scan	PDF	RFL1N18, RFL1N20, RFP2N18, RFP2N20 RFL1N18 RFP2N18 RFP2N20 1n20 RFL1N20 TA9290 TA9289
RFL1N20L Abstract: RFP2N18L RFP2N20L AT 7312 RFL1N18L 92CS-J7307 Text: Logic-Level Power MOSFETs _ _ RFL1N18L, RFL1N20L, RFP2N18L, RFP2N20L File N um ber 15111 N-Channel Logic Level Power Field-Effect Transistors L2 FET 1 and 2 A, 180 V and 200 V rDs<on>: 3.5 O and 3.65 fi Features: • Design optimized for 5 volt gate drive	OCR Scan	PDF	RFL1N18L, RFL1N20L, RFP2N18L, RFP2N20L 92CS-3374I RFL1N18L RFL1N20L RFP2N18L AT 7312 92CS-J7307
buz11 Abstract: BUZ31 THOMSON DISTRIBUTOR 58e d RFK30N12 THOMSON 58E THOMSON DISTRIBUTOR BUZ71 BUZ71A RFH12N RFK45N05 Text: THOnSON/ DISTRIBUTOR 5flE D • ^05^873 □□□57D3 5fl3 Wt TCSK P o w er M O S FE T s RF and B U Z -S e rie s P ow er M O S FE Ts — N -C h a n n e l Package Maximum Ratings BV q s S V id s (A) r DS(ON) OHMS 50 2 4 13 14 15 25 25 30 45 0.75 0.60 0.12	OCR Scan	PDF	T0-204 O-205 O-218 O-220 RFM15N05 RFM25N05 RFK45N05 RFL2N05 RFH45N05 RFP4N05 buz11 BUZ31 THOMSON DISTRIBUTOR 58e d RFK30N12 THOMSON 58E THOMSON DISTRIBUTOR BUZ71 BUZ71A RFH12N
EATON CM20A Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268 Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main	OCR Scan	PDF
4311 mosfet transistor Abstract: D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r Text: - POWER MOSFETs 4 N-CHANNEL POWER MOSFETs PAGE 2N6755, 2N6756 N-Channel Enhancement-Mode Power Field-Effect Transistors. 2N6757, 2N6758 N-Channel Enhancement-Mode Power Field-Effect Transistors. 4-11 2N6759, 2N6760	OCR Scan	PDF	2N6755, 2N6756 2N6757, 2N6758 2N6759, 2N6760 2N6761, 2N6762 2N6763, 2N6764 4311 mosfet transistor D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r

1N20L Abstract: RFL1N18L RFL1N20L Text: H a r r i s August 1991 R F L 1 N 1 8 L R F L 1 N 2 L N-Channel Logic Level Power Field-Effect Transistors {L2FET} Package Features • 1A, 180V and 200V T O -2 0 5 A F BOTTOM VIEW • rDS 0fr[ = 3 .6 5 ft • Design Optimized for 5V Gate Drives GATE SOURCE	OCR Scan	PDF	RFL1N18L RFL1N20L accomC5-37509 RFL1N18L, 1N20L AN72S4 AN-7260. 92CS-57SI2
RFL1N20L Abstract: No abstract text available Text: 2 H a R F L 1 N 1 8 L r r i s R F L 1 N 2 0 L August 1991 N-Channel Logic Level Power Field-Effect Transistors L2 FET) Package Features • 1A, 180V and 200V T 0-205A F BOTTOM VIEW • rDS(0N) = 3 .6 5 0 • Design Optimized for SV Gate Drives • Can be Driven Directly from QMOS, NMOS, TTL Circuits	OCR Scan	PDF	RFL1N18L RFL1N20L
stepping motor EPSON EM - 234 Abstract: EPSON motor em 402 induction cooker fault finding diagrams ECG transistor replacement guide book free stepping motor EPSON EM 234 stepping motor EPSON em 331 S576B transistor d389 maranyl TMS1601A Text: Issued March 1988 8773 Data Library Contents list and semiconductor device type index Data library contents Subject Title Number Communications Equipment B. T. telephone connection system Digital compact paging system Escort 2 + 6 telephone switching system	OCR Scan	PDF	RS232 RS232C stepping motor EPSON EM - 234 EPSON motor em 402 induction cooker fault finding diagrams ECG transistor replacement guide book free stepping motor EPSON EM 234 stepping motor EPSON em 331 S576B transistor d389 maranyl TMS1601A
equivalent data book of 10N60 mosfet Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40 Text: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:	OCR Scan	PDF	1-800-4HARRIS equivalent data book of 10N60 mosfet MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40