RG MARKING CODE TRANSISTOR Search Results

RG MARKING CODE TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

RG MARKING CODE TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
SOT-23 IP Abstract: marking code P28 SOT 23 Programmable Unijunction Transistor CMPP6027 CMPP6027 CMPP6028 Programmable unijunction CMPP6028 unijunction Text: Central CMPP6027 CMPP6028 SURFACE MOUNT PROGRAMMABLE UNIJUNCTION SILICON TRANSISTOR SOT-23 CASE TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor CMPP6027, CMPP6028 types are Silicon Programmable Unijunction Transistors, manufactured in a surface mount SOT23 package, designed for adjustable programmable	Original	CMPP6027 CMPP6028 OT-23 CMPP6027, CMPP6027 CMPP6028 29-April SOT-23 IP marking code P28 SOT 23 Programmable Unijunction Transistor CMPP6027 CMPP6028 Programmable unijunction unijunction	PDF
marking code P28 SOT 23 Abstract: transistor marking code p28 SOT-23 CMPP6028 CMPP6027 sot23 marking UA marking code P27 SOT 23 Text: Central CMPP6027 CMPP6028 TM Semiconductor Corp. SURFACE MOUNT PROGRAMMABLE UNIJUNCTION SILICON TRANSISTOR DESCRIPTION: The Central Semiconductor CMPP6027, CMPP6028 types are Silicon Programmable Unijunction Transistors, manufactured in a surface mount SOT-23 package, designed for	Original	CMPP6027 CMPP6028 CMPP6027, CMPP6028 OT-23 CMPP6027 05-September marking code P28 SOT 23 transistor marking code p28 SOT-23 sot23 marking UA marking code P27 SOT 23	PDF
"Programmable Unijunction Transistor" Abstract: marking code P28 SOT 23 programmable unijunction transistor marking code P27 SOT 23 transistor p27 P28 SOT23 transistor marking code p28 SOT-23 CMPP6027 CMPP6028 P28 Transistor Text: Central CMPP6027 CMPP6028 TM Semiconductor Corp. SILICON PROGRAMMABLE UNIJUNCTION TRANSISTOR DESCRIPTION: The Central Semiconductor CMPP6027, CMPP6028 types are Silicon Programmable Unijunction Transistors, manufactured in a surface mount SOT-23 package, designed for	Original	CMPP6027 CMPP6028 CMPP6027, CMPP6028 OT-23 CMPP6027 05-September "Programmable Unijunction Transistor" marking code P28 SOT 23 programmable unijunction transistor marking code P27 SOT 23 transistor p27 P28 SOT23 transistor marking code p28 SOT-23 P28 Transistor	PDF
Untitled Abstract: No abstract text available Text: IRGS4620DPbF IRGB4620DPbF IRGP4620D -E PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C G G IC = 20A, TC =100°C G tSC ≥ 5µs, TJ(max) = 175°C C G E VCE(ON) typ. = 1.55V @ IC = 12A n-channel Applications • Appliance Drive	Original	IRGS4620DPbF IRGB4620DPbF IRGP4620D IRGP4620DPbF O-247AC O-220AC IRGP4620D-EPbF O-247AD	PDF
Untitled Abstract: No abstract text available Text: IRGS4630DPbF IRGB4630DPbF IRGP4630D -E PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C G G IC = 30A, TC =100°C G tSC ≥ 5µs, TJ(max) = 175°C C G E VCE(ON) typ. = 1.65V @ IC = 18A n-channel Applications • Appliance Drives	Original	IRGS4630DPbF IRGB4630DPbF IRGP4630D IRGP4630DPbF O-247AC IRGP4630D-EPbF O-247AD O-220AC	PDF
Untitled Abstract: No abstract text available Text: PD - 94925B IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10 s Short Circuit Capability. • Square RBSOA.	Original	94925B IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF O-220AB O-262 I20AB	PDF
AN-994 Abstract: C-150 IRF530S IRGB10B60KD IRGS10B60KD IRGSL10B60KD IRL3103L Text: PD - 94925A IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA.	Original	4925A IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF O-220AB IRGB10B60KD IRGS10B60KD O-262 IRGSL10B60KD AN-994. AN-994 C-150 IRF530S IRGB10B60KD IRGS10B60KD IRGSL10B60KD IRL3103L	PDF
Untitled Abstract: No abstract text available Text: PD - 95645 IRGB8B60KPbF IRGS8B60K IRGSL8B60K INSULATED GATE BIPOLAR TRANSISTOR Features C • Low VCE on Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. •TO-220 is available in PbF as a Lead-Free.	Original	O-220 IRGB8B60KPbF IRGS8B60K IRGSL8B60K O-220AB IRGS8B60K O-262	PDF
SL4B Abstract: FD059 Text: PD - 95643A IRGB4B60KPbF IRGS4B60KPbF IRGSL4B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.	Original	5643A IRGB4B60KPbF IRGS4B60KPbF IRGSL4B60KPbF O-220 IRGB4B60KPbF O-262 AN-994. SL4B FD059	PDF
AN-994 Abstract: C-150 IRGS8B60K IRGSL8B60K Mbl transistor Text: PD - 95645A IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Lead-Free.	Original	5645A IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF O-220AB IRGB8B60KPbF IRGS8B60K O-262 IRGSL8B60K O-220AB AN-994 C-150 IRGS8B60K IRGSL8B60K Mbl transistor	PDF
AN-994 Abstract: C-150 igbt 400V 40A Text: PD - 95643A IRGB4B60KPbF IRGS4B60KPbF IRGSL4B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.	Original	5643A IRGB4B60KPbF IRGS4B60KPbF IRGSL4B60KPbF O-220 O-262 IRGS4B60KPbF AN-994. AN-994 C-150 igbt 400V 40A	PDF
d 1830 Abstract: No abstract text available Text: PD - 94925C IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10 s Short Circuit Capability. • Square RBSOA.	Original	94925C IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF O-220AB O-262 I20AB d 1830	PDF
AN-994 Abstract: C-150 IRGS8B60K IRGSL8B60K Text: PD - 95645A IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Lead-Free.	Original	5645A IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF O-220AB IRGB8B60KPbF IRGS8B60K O-262 IRGSL8B60K AN-994. AN-994 C-150 IRGS8B60K IRGSL8B60K	PDF
AN-994 Abstract: C-150 IRF530S IRGB10B60KD IRGS10B60KD IRGSL10B60KD IRL3103L Text: PD - 94925A IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA.	Original	4925A IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF O-220AB IRGB10B60KD IRGS10B60KD O-262 IRGSL10B60KD AN-994. AN-994 C-150 IRF530S IRGB10B60KD IRGS10B60KD IRGSL10B60KD IRL3103L	PDF

Untitled Abstract: No abstract text available Text: PD - 94545C IRGB8B60K IRGS8B60K IRGSL8B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. VCES = 600V IC = 20A, TC=100°C	Original	94545C IRGB8B60K IRGS8B60K IRGSL8B60K O-220AB O-262 AN-994.	PDF
C-150 Abstract: IRF1010 IRF530S IRGB8B60K IRGS8B60K IRGSL8B60K TO-220AB transistor package 11mH Text: PD - 94545C IRGB8B60K IRGS8B60K IRGSL8B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. VCES = 600V IC = 20A, TC=100°C	Original	94545C IRGB8B60K IRGS8B60K IRGSL8B60K O-220AB O-262 O-220AB C-150 IRF1010 IRF530S IRGB8B60K IRGS8B60K IRGSL8B60K TO-220AB transistor package 11mH	PDF
Untitled Abstract: No abstract text available Text: PD - 94545 IRGB8B60K IRGS8B60K IRGSL8B60K INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.	Original	IRGB8B60K IRGS8B60K IRGSL8B60K O-220AB O-262 O-220AB AN-994.	PDF
C-150 Abstract: IRF1010 IRF530S IRGB4B60K IRGS4B60K IRGSL4B60K diode 68A VGE15V Text: PD - 94633A IRGB4B60K IRGS4B60K IRGSL4B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C.	Original	4633A IRGB4B60K IRGS4B60K IRGSL4B60K O-220 O-262 AN-994. C-150 IRF1010 IRF530S IRGB4B60K IRGS4B60K IRGSL4B60K diode 68A VGE15V	PDF
Untitled Abstract: No abstract text available Text: PD - 94545A IRGB8B60K IRGS8B60K IRGSL8B60K INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.	Original	4545A IRGB8B60K IRGS8B60K IRGSL8B60K O-220AB O-262 O-220AB	PDF
C-150 Abstract: IRF1010 IRF530S IRGB8B60K IRGS8B60K IRGSL8B60K Text: PD - 94545C IRGB8B60K IRGS8B60K IRGSL8B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. VCES = 600V IC = 20A, TC=100°C	Original	94545C IRGB8B60K IRGS8B60K IRGSL8B60K O-220AB O-262 AN-994. C-150 IRF1010 IRF530S IRGB8B60K IRGS8B60K IRGSL8B60K	PDF
Untitled Abstract: No abstract text available Text: SIEMENS BCR 185W PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor Ri = 10kii, Rg = 47kii _EL nr LT Pin Configuration WNs 1= B Q62702-C2280 Package 2=E o Marking Ordering Code BCR 185W	OCR Scan	10kii, 47kii) Q62702-C2280 OT-323 300ns;	PDF
Untitled Abstract: No abstract text available Text: SIEMENS BCR 191 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit »Built in bias resistor R1=22kiî, Rg=22ki2 Type Marking Ordering Code Pin Configuration BCR 191 WOs 1=B Q62702-C2264 Package 2=E 3=C SOT-23	OCR Scan	22ki2) Q62702-C2264 OT-23	PDF
TRANSISTOR b1181 Abstract: b1181 2SB1181F5 Text: 2SB1181F5 Transistor, PNP Features Dimensions Units : mm • available in C P T F5 (SC-63) package • package marking: B1181 ★□, where ★ is hFE code and □ is lot number • hig h b re a k d o w n v o lta g e a n d la rg e c u rre n t ca p a b ility : V q e o = - 8 ° V,	OCR Scan	2SB1181F5 SC-63) B1181 2SD1733 2SB1181F5 TRANSISTOR b1181 b1181	PDF
transistor p27 Abstract: 359 sot23 marking code 359 sot-23 transistor marking code p28 SOT-23 marking CC SOT-23 MARKING TR SOT23 sot23 js marking P27 pnp transistor t20 MARKING V0 sot23 Text: Central" CMPP6027 CMPP6028 Semiconductor Corp. SURFACE MOUNT PROGRAMMABLE UNIJUNCTION SILICON TRANSISTOR DESCRIPTION: The Central Semiconductor CMPP6027, CMPP6028 types are Silicon Programmable Unijunction Transistors, manufactured in a sur face mount SOT-23 package, designed for	OCR Scan	CMPP6027 CMPP6028 CMPP6027, OT-23 CP622 CP624 transistor p27 359 sot23 marking code 359 sot-23 transistor marking code p28 SOT-23 marking CC SOT-23 MARKING TR SOT23 sot23 js marking P27 pnp transistor t20 MARKING V0 sot23	PDF

RG MARKING CODE TRANSISTOR Search Results

RG MARKING CODE TRANSISTOR Result Highlights (5)

RG MARKING CODE TRANSISTOR Datasheets Context Search

SOT-23 IP

marking code P28 SOT 23

"Programmable Unijunction Transistor"

Untitled

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Untitled

AN-994

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SL4B

AN-994

AN-994

d 1830

AN-994

AN-994

Untitled

C-150

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C-150

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C-150

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TRANSISTOR b1181

transistor p27