Si4921DY
Abstract: No abstract text available
Text: SPICE Device Model Si4921DY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4921DY
0-to-10V
21-May-03
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Si7447DP
Abstract: No abstract text available
Text: SPICE Device Model Si7447DP Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si7447DP
0-to-10V
10-Sep-02
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Si3424DV
Abstract: No abstract text available
Text: SPICE Device Model Si3424DV Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si3424DV
13-Apr-01
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SI3424DV
Abstract: No abstract text available
Text: SPICE Device Model Si3424DV Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si3424DV
S-50383Rev.
21-Mar-05
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SUP85N02-03
Abstract: No abstract text available
Text: SPICE Device Model SUB/SUP85N02-03 Vishay Siliconix N-Channel 20-V D-S , 175°C MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUB/SUP85N02-03
18-Apr-01
SUP85N02-03
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Si4911DY
Abstract: Si4921DY
Text: Click Here & Upgrade PDF Complete Expanded Features Unlimited Pages Documents SPICE Device Model Si4921DY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application
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Si4921DY
20-May-04
Si4911DY
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SUB85N02-03
Abstract: No abstract text available
Text: SPICE Device Model SUP/SUB85N02-03 Vishay Siliconix N-Channel 20-V D-S , 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUP/SUB85N02-03
S-60545Rev.
10-Apr-06
SUB85N02-03
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Si3424DV
Abstract: No abstract text available
Text: SPICE Device Model Si3424DV N-Channel 30-V D-S MOSFET Characteristics • N-channel Vertical DMOS • Macro-Model (Sub-circuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse
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Si3424DV
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Si3424DV
Abstract: No abstract text available
Text: SPICE Device Model Si3424DV Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si3424DV
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SUP/SUB85N02-03 Vishay Siliconix N-Channel 20-V D-S , 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUP/SUB85N02-03
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SQJ942EP www.vishay.com Vishay Siliconix N-Channel Dual Asymmetric 40 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SQJ942EP
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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4425b
Abstract: V30114-T1 vishay siliconix code marking to-220 marking code 20L sot-23 sot23 to252 footprint wave soldering siliconix an808
Text: Si4421DY New Product Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.00875 @ VGS = - 4.5 V - 14 0.01075 @ VGS = - 2.5 V - 12 0.0135 @ VGS = - 1.8 V - 11 D TrenchFETr Power MOSFET APPLICATIONS D Game Station
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Si4421DY
12-Dec-03
AN826
20-Jun-03
4425b
V30114-T1
vishay siliconix code marking to-220
marking code 20L sot-23 sot23
to252 footprint wave soldering
siliconix an808
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SOT-563 SOT-666
Abstract: marking 802 soic8 sot-563 MOSFET D1 20l sot-23 siliconix MARKING CODE mSOp-8 siliconix code marking to-220 marking code 20L sot-23 sot23 V30114-T1
Text: Si1024X Vishay Siliconix Dual N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (mA) 0.70 @ VGS = 4.5 V 600 0.85 @ VGS = 2.5 V 500 1.25 @ VGS = 1.8 V 350 FEATURES D D D D D D D BENEFITS Very Small Footprint High-Side Switching Low On-Resistance: 0.7 W
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Si1024X
OT-563
SC-89
SC70-6L
SC89-6L
Specification--PACK-0007-9
T-05206,
AN826
SC-89:
20-Jun-03
SOT-563 SOT-666
marking 802 soic8
sot-563 MOSFET D1
20l sot-23
siliconix MARKING CODE mSOp-8
siliconix code marking to-220
marking code 20L sot-23 sot23
V30114-T1
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SI1473DH
Abstract: marking R5* sc-70 N2 SC70 tsop6 marking DC 74371 N2 SC70 6pin MSOP-8 marking AX PIN diode Pspice model V30114 EQUIVALENT OF TO252 PACK OF P-CHANNEL MOSFET WITH
Text: New Product Si1473DH Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)c 0.100 at VGS = - 10 V - 1.6 0.145 at VGS = - 4.5 V - 1.6 VDS (V) - 30 Qg (Typ) 4.1 nC • TrenchFET Power MOSFET APPLICATIONS RoHS • Load Switch for Portable Devices
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Si1473DH
OT-363
SC-70
Si1473DH-T1-E3
03-May-07
marking R5* sc-70
N2 SC70
tsop6 marking DC
74371
N2 SC70 6pin
MSOP-8 marking AX
PIN diode Pspice model
V30114
EQUIVALENT OF TO252 PACK OF P-CHANNEL MOSFET WITH
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C3028LD
Abstract: DMC3028LSD-13 DMC3028LSD J-STD-020D C3028
Text: A Product Line of Diodes Incorporated DMC3028LSD 30V COMPLEMENTARY DUAL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Device Features and Benefits Q1 ID RDS on V(BR)DSS TA = 25°C 28mΩ @ VGS= 10V 7.1A
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DMC3028LSD
MIL-STD-202,
C3028LD
DMC3028LSD-13
DMC3028LSD
J-STD-020D
C3028
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SMAJ33 spice
Abstract: marking JP diodes A13F
Text: SMAJ5.0 C A - SMAJ170(C)A 400W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR Please click here to visit our online spice models database. Features • • • • • • 400W Peak Pulse Power Dissipation Glass Passivated Die Construction Unidirectional and Bidirectional Versions Available
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SMAJ170
J-STD-020D
MIL-STD-202,
DS19005
SMAJ33 spice
marking JP diodes
A13F
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rg-178 spice model
Abstract: No abstract text available
Text: THS3092 THS3096 www.ti.com SLOS428A – DECEMBER 2003 – REVISED FEBRUARY 2004 HIGH-VOLTAGE, LOW-DISTORTION, CURRENT-FEEDBACK OPERATIONAL AMPLIFIERS FEATURES • • • • • • • DESCRIPTION Low Distortion – 66 dBc HD2 at 10 MHz, RL = 100 Ω – 76 dBc HD3 at 10 MHz, RL = 100 Ω
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THS3092
THS3096
SLOS428A
THS3096
rg-178 spice model
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08055C104KAT2A
Abstract: No abstract text available
Text: THS3092 THS3096 www.ti.com SLOS428A – DECEMBER 2003 – REVISED FEBRUARY 2004 HIGH-VOLTAGE, LOW-DISTORTION, CURRENT-FEEDBACK OPERATIONAL AMPLIFIERS FEATURES • • • • • • • DESCRIPTION Low Distortion – 66 dBc HD2 at 10 MHz, RL = 100 Ω – 76 dBc HD3 at 10 MHz, RL = 100 Ω
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THS3092
THS3096
SLOS428A
THS3096
08055C104KAT2A
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dmp3025
Abstract: P3025L DMP3025LK3 DMP3025LK3-13 J-STD-020D 20V P-Channel Power MOSFET high current p3025
Text: A Product Line of Diodes Incorporated DMP3025LK3 30V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary V BR DSS Features and Benefits ID RDS(on) TA = 25°C 25mΩ @ VGS= -10V -16.1A 41mΩ @ VGS= -4.5V
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DMP3025LK3
O252-3L
dmp3025
P3025L
DMP3025LK3
DMP3025LK3-13
J-STD-020D
20V P-Channel Power MOSFET high current
p3025
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9-0-9 step down transformer
Abstract: No abstract text available
Text: THS3092 THS3096 www.ti.com SLOS428B – DECEMBER 2003 – REVISED FEBRUARY 2006 HIGH-VOLTAGE, LOW-DISTORTION, CURRENT-FEEDBACK OPERATIONAL AMPLIFIERS FEATURES • • • • • • • DESCRIPTION Low Distortion – 66 dBc HD2 at 10 MHz, RL = 100 Ω – 76 dBc HD3 at 10 MHz, RL = 100 Ω
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THS3092
THS3096
SLOS428B
THS3096
9-0-9 step down transformer
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9-0-9 step down transformer
Abstract: step down transformer 909
Text: THS3092 THS3096 www.ti.com SLOS428B – DECEMBER 2003 – REVISED FEBRUARY 2006 HIGH-VOLTAGE, LOW-DISTORTION, CURRENT-FEEDBACK OPERATIONAL AMPLIFIERS FEATURES • • • • • • • DESCRIPTION Low Distortion – 66 dBc HD2 at 10 MHz, RL = 100 Ω – 76 dBc HD3 at 10 MHz, RL = 100 Ω
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THS3092
THS3096
SLOS428B
THS3096
9-0-9 step down transformer
step down transformer 909
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K909
Abstract: 9-0-9 step down transformer
Text: THS3092 THS3096 www.ti.com SLOS428B – DECEMBER 2003 – REVISED FEBRUARY 2006 HIGH-VOLTAGE, LOW-DISTORTION, CURRENT-FEEDBACK OPERATIONAL AMPLIFIERS FEATURES • • • • • • • DESCRIPTION Low Distortion – 66 dBc HD2 at 10 MHz, RL = 100 Ω – 76 dBc HD3 at 10 MHz, RL = 100 Ω
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THS3092
THS3096
SLOS428B
THS3096
K909
9-0-9 step down transformer
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Untitled
Abstract: No abstract text available
Text: THS3092 THS3096 www.ti.com SLOS428B – DECEMBER 2003 – REVISED FEBRUARY 2006 HIGH-VOLTAGE, LOW-DISTORTION, CURRENT-FEEDBACK OPERATIONAL AMPLIFIERS FEATURES • • • • • • • DESCRIPTION Low Distortion – 66 dBc HD2 at 10 MHz, RL = 100 Ω – 76 dBc HD3 at 10 MHz, RL = 100 Ω
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THS3092
THS3096
SLOS428B
THS3096
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Untitled
Abstract: No abstract text available
Text: THS3092 THS3096 www.ti.com SLOS428A – DECEMBER 2003 – REVISED FEBRUARY 2004 HIGH-VOLTAGE, LOW-DISTORTION, CURRENT-FEEDBACK OPERATIONAL AMPLIFIERS FEATURES • • • • • • • DESCRIPTION Low Distortion – 66 dBc HD2 at 10 MHz, RL = 100 Ω – 76 dBc HD3 at 10 MHz, RL = 100 Ω
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THS3092
THS3096
SLOS428A
THS3096
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