Untitled
Abstract: No abstract text available
Text: Information DC axial fans Accessories DC centrifugal fans 238 246 248 251 254 AC centrifugal fans AC axial fans ACmaxx / GreenTech EC-Compact fans DC fans - specials Guard grilles Fan filter guard grilles Inlet nozzles Connection cables / Accessories Electrical connections
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818d
Abstract: No abstract text available
Text: SKM 500GA124D Absolute Maximum Ratings Symbol Conditions IGBT ;+< + +@ ;!< B ; SEMITRANSTM 4 Low Loss IGBT Modules SKM 500GA124D Typical Applications / / & ,+ &3 $ 14
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500GA124D
818d
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Untitled
Abstract: No abstract text available
Text: SKM 500GA124D Absolute Maximum Ratings Symbol Conditions IGBT ;+< + +@ ;!< B ; SEMITRANSTM 4 Low Loss IGBT Modules SKM 500GA124D Typical Applications / / & ,+ &3 $ 14
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500GA124D
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diode A44
Abstract: LM 488
Text: SKM 500GA124D Absolute Maximum Ratings Symbol Conditions IGBT ;+< + +@ ;!< C ; SEMITRANSTM 4 Low Loss IGBT Modules SKM 500GA124D Typical Applications / / & ,+ &3 $ 14
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500GA124D
diode A44
LM 488
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FET 4900
Abstract: H5N1506P H5N1506P-E
Text: H5N1506P Silicon N Channel MOS FET High Speed Power Switching REJ03G0389-0100Z Rev.1.00 Jul.30.2004 Features • Low on-resistance • Low leakage current • High speed switching Outline TO-3P D 1. Gate 2. Drain Flange 3. Source G S 1 2 3 Absolute Maximum Ratings
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H5N1506P
REJ03G0389-0100Z
FET 4900
H5N1506P
H5N1506P-E
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Untitled
Abstract: No abstract text available
Text: NGTG15N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited
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NGTG15N120FL2WG
NGTG15N120FL2W/D
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Untitled
Abstract: No abstract text available
Text: STRH40N6SY1 STRH40N6SY3 N-channel 60V - 0.032Ω - SMD-0.5 rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH40N6SY1 60 V STRH40N6SY3 60 V 2 1 • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge
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STRH40N6SY1
STRH40N6SY3
100kRad
34Mev/cm
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H5N1506P
Abstract: H5N1506P-E PRSS0004ZE-A SC-65
Text: H5N1506P Silicon N Channel MOS FET High Speed Power Switching REJ03G0389-0200 Rev.2.00 Jul 03, 2006 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004ZE-A Package name: TO-3P D 1. Gate 2. Drain (Flange)
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H5N1506P
REJ03G0389-0200
PRSS0004ZE-A
H5N1506P
H5N1506P-E
PRSS0004ZE-A
SC-65
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Untitled
Abstract: No abstract text available
Text: NGTB15N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited
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NGTB15N120FL2WG
NGTB15N120FL2W/D
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STRH40N6SY1
Abstract: JESD97 STRH40N6SY3
Text: STRH40N6SY1 STRH40N6SY3 N-channel 60V - 0.032Ω - SMD-0.5 rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH40N6SY1 60 V STRH40N6SY3 60 V 2 1 • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge
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STRH40N6SY1
STRH40N6SY3
100kRad
34Mev/cm
STRH40N6SY1
JESD97
STRH40N6SY3
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AUIRLL2705
Abstract: IRS 740
Text: PD- 97756 Features l Advanced Planar Technology l Low On-Resistance l Dynamic dv/dt Rating l 150°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified*
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AUIRLL2705
AUIRLL2705
IRS 740
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Untitled
Abstract: No abstract text available
Text: PD- 97755 AUTOMOTIVE GRADE AUIRLL014N Features l Advanced Planar Technology l Low On-Resistance l Dynamic dv/dt Rating l 150°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant
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AUIRLL014N
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Untitled
Abstract: No abstract text available
Text: PD- 97756 Features l Advanced Planar Technology l Low On-Resistance l Dynamic dv/dt Rating l 150°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified*
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AUIRLL2705
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SMD M1A
Abstract: AUIRLL014N m1a smd package IRS 740
Text: PD- 97755 AUTOMOTIVE GRADE AUIRLL014N Features l Advanced Planar Technology l Low On-Resistance l Dynamic dv/dt Rating l 150°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant
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AUIRLL014N
SMD M1A
AUIRLL014N
m1a smd package
IRS 740
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NTD4959N
Abstract: No abstract text available
Text: NTD4959NH Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com
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NTD4959NH
NTD4959NH/D
NTD4959N
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09nhg
Abstract: NTD4809NHT4G 4809nhg NTD4809NH 369D 48 09NHG
Text: NTD4809NH Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com
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NTD4809NH
NTD4809NH/D
09nhg
NTD4809NHT4G
4809nhg
NTD4809NH
369D
48 09NHG
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Untitled
Abstract: No abstract text available
Text: NTD4809NH, NVD4809NH Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4809NH
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NTD4809NH,
NVD4809NH
AEC-Q101
NTD4809NH/D
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09nhg
Abstract: 48 09NHG 4809NH NTD4809NHT4G 369D NTD4809NH 4809NHG
Text: NTD4809NH Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com
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NTD4809NH
NTD4809NH/D
09nhg
48 09NHG
4809NH
NTD4809NHT4G
369D
NTD4809NH
4809NHG
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09nhg
Abstract: 4809nhg 48 09NHG 369D NTD4809NH 4809NH NTD4809NH-1G
Text: NTD4809NH Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAK Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices http://onsemi.com
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NTD4809NH
NTD4809NH/D
09nhg
4809nhg
48 09NHG
369D
NTD4809NH
4809NH
NTD4809NH-1G
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Untitled
Abstract: No abstract text available
Text: TOP VIEW Not to Scale 8 +VS FB 2 7 OUT –IN 3 6 NC +IN 4 5 –VS 07040-001 PD 1 NC = NO CONNECT Figure 1. 8-Lead LFCSP (CP) ADA4857-1 FB 1 8 PD –IN 2 7 +VS +IN 3 6 OUT –VS 4 5 NC NC = NO CONNECT 07040-002 TOP VIEW (Not to Scale) Figure 2. 8-Lead SOIC (R)
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16-lead
ADA4857-1/ADA4857-2
ADA4857-1
CP-16-4
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BY27-150
Abstract: GENERAL INSTRUMENT b80c5000 BY207 S8360 BYX55-600 B80C1500M b40c3700 BY500 general instrument JJTX1N5615 BRIDGE RECTIFIERS b80c3700
Text: INTRODUCTION General Instrument Corporation Is a major multinational company manufacturing a wide range of products from data systems, broadband communications, and components to semiconductor products. The cor poration, which has been in existence over 50 years, has manufacturing
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sP10-1006
ZGPKM10
2GP1M10A
ZGP10-110B
ZGP10-12Û
ZGP10-12QA
ZGP10-1206
ZGP10-130
ZGP10-13QA
ZGP10-130B
BY27-150
GENERAL INSTRUMENT b80c5000
BY207
S8360
BYX55-600
B80C1500M
b40c3700
BY500 general instrument
JJTX1N5615
BRIDGE RECTIFIERS b80c3700
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TQ-SMD 6pin
Abstract: photomos relay application AQV250 HF HC 6pin photomos relay AQY270
Text: TABLE OF CONTENTS Page 2 Relay Selector Chart Relay Technical Inform ation Definition of Relay Terminology. . 32 General Application G uidelines. . 36 Reliability. .49
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Untitled
Abstract: No abstract text available
Text: F-212 G E N E R A L POLICY m p rj The information contained in this catalog is accurate to the best of our knowledge. Due to technical progress, it is subject to change without notice. Application information is informational in nature and shall not be construed to warrant suitability of products for
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F-212
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MCT1458CP1
Abstract: mct1458cp MCT1458CD
Text: g MOTOROLA M CT1458, C In ternally Com pensated, High Perform ance Dual O perational A m plifier The MCT1458, C was designed for use as a summing amplifier, integrator, or amplifier with operating characteristics as a function of the external feedback components.
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CT1458,
MCT1458,
MCT1458CP1
mct1458cp
MCT1458CD
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