2N2329
Abstract: 2N2327 2N2328
Text: 2N2327 thur 2N2329 SILICON THYRISTORS All-diffused PNPN thyristors designed for grating operation in mA/µA signal or detection circuits . MAXIMUM RATINGS * TJ=125°C unless otherwise noted, RGK=1000Ω Symbol VRSM(REP) VRSM(NON-REP) IT(RMS) ITSM Ratings
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2N2327
2N2329
2N2327
2N2328
2N2329
2N2328
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Untitled
Abstract: No abstract text available
Text: 4-1. Thyristors Thyristors Absolute Maximum Ratings Parameter Repetitive Peak Off-state voltage Non-repetitive Peak Off-state voltage Tj = –40 to Tjmax RGK = 1kΩ VDRM V VDSM (V) TF321S 200 300 TF341S 400 500 Type No. Electric Characteristics Mean On-state
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TF541S-A
TF561S-A
TF321M
TF341M
TF361M
TF521M
TF541M
TF561M
TF821M
TF841M
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VOLTAGE-60
Abstract: No abstract text available
Text: COMSET SEMICONDUCTORS 2N2322 thru 2N2326 SILICON THYRISTORS All-diffused PNPN thyristors designed for grating operation in mA/µA signal or detection circuits MAXIMUM RATINGS * TJ=125°C unless otherwise noted, RGK=1000Ω Symbol VRSM(REP) VRSM(NON-REP)
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2N2322
2N2326
2N2322
2N2323
VOLTAGE-60
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TF541M
Abstract: TF561S-A TF861S TM1661S-L TM1261S-L TM861s tf521s TF541M DATASHEET tm361s tfd312s-o
Text: 4 Thyristors 4-1. Thyristors 4-2. Triacs 4-3. PNPN Switch 31 4-1. Thyristors Thyristors Absolute Maximum Ratings Parameter Repetitive Peak Off-state voltage Non-repetitive Peak Off-state voltage Tj = –40 to Tjmax RGK = 1kΩ VDRM V VDSM (V) TF321S 200
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TF341S
TF541M
TF561S-A
TF861S
TM1661S-L
TM1261S-L
TM861s
tf521s
TF541M DATASHEET
tm361s
tfd312s-o
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2N2325
Abstract: 2N2324 2N2326 2N2322 2N2323
Text: 2N2322 thru 2N2326 SILICON THYRISTORS All-diffused PNPN thyristors designed for grating operation in mA/µA signal or detection circuits MAXIMUM RATINGS * TJ=125°C unless otherwise noted, RGK=1000Ω Symbol VRSM(REP) VRSM(NON-REP) IT(RMS) ITSM Ratings Peak reverse blocking voltage (1)
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2N2322
2N2326
2N2322
2N2323
2N2324
2N2325
2N2325
2N2324
2N2326
2N2323
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rgk 13
Abstract: SLA0201 VD600V
Text: 5A 600V 4 circuits Thyristor array SLA0201 • Features External Dimensions Unit: mm 16.0± 0.2 13.0± 0.2 9.9± 0.2 4.8± 0.2 a 1.7± 0.1 b Thy1 Thy2 Thy3 Thy4 2.7 9.5min (10.4) ●Gate trigger current: IGT=10mA max 8.5max ●Repetitive peak off-state voltage: VDRM=600V
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SLA0201
rgk 13
SLA0201
VD600V
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SLA0201
Abstract: No abstract text available
Text: 5A 600V 4 circuits Thyristor array SLA0201 • Features External Dimensions Unit: mm 16.0± 0.2 13.0± 0.2 9.9± 0.2 4.8± 0.2 a 1.7± 0.1 b Thy1 Thy2 Thy3 Thy4 2.7 9.5min (10.4) ●Gate trigger current: IGT=10mA max 8.5max ●Repetitive peak off-state voltage: VDRM=600V
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SLA0201
SLA0201
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Untitled
Abstract: No abstract text available
Text: 5A 600V 4 circuits Thyristor array SLA0201 • Features External Dimensions Unit: mm 16.0± 0.2 13.0± 0.2 9.9± 0.2 4.8± 0.2 a 1.7± 0.1 b Thy1 Thy2 Thy3 Thy4 2.7 9.5min (10.4) ●Gate trigger current: IGT=10mA max 8.5max ●Repetitive peak off-state voltage: VDRM=600V
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SLA0201
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Untitled
Abstract: No abstract text available
Text: TO-220F 3A Thyristor with built-in Avalanche diode TFD312S series • Features External Dimensions Unit: mm ●Gate trigger current: IGT=10mA max 13.0 min ●Isolation voltage: VISO=1500V(50Hz AC, RMS, 1min.) ±0.2 4.2 C 0.5 2.8 ±0.2 φ ±0.2 3.3 A 0.2
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O-220F
TFD312S
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TF321S
Abstract: TF341S TF361S
Text: TO-220F 3A Thyristor TF321S, TF341S, TF361S • Features External Dimensions φ 3.3±0.2 ●Gate trigger current: IGT=15mA max 13.0 min ●Isolation voltage: VISO=1500V 50Hz Sine wave, RMS 3.9±0.2 0.8±0.2 16.9± 0.3 ●Average on-state current: IT(AV)=3A
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O-220F
TF321S,
TF341S,
TF361S
TF321S
TF341S
TF361S
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Untitled
Abstract: No abstract text available
Text: TO-220F 5A High sensitive Thyristor TF541S-A,TF561S-A • Features External Dimensions ●High sensitive Gate trigger current: IGT=0.2mA max 13.0 min ●Isolation voltage: VISO=1500V 50Hz Sine wave, RMS 0.2 0.2 3.9± 0.8± 0.3 16.9± 0.2 8.4± ●Repetitive peak off-state voltage: VDRM=400, 600V
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O-220F
TF541S-A
TF561S-A
Non-repetitive25
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E80276
Abstract: CR3PM
Text: MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR3PM LOW POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE OUTLINE DRAWING CR3PM Dimensions in mm 10.5 MAX 2.8 8.5 17 5.0 1.2 5.2 TYPE NAME φ3.2±0.2 VOLTAGE CLASS 13.5 MIN 3.6 1.3 MAX 0.8 2.54 123 IT AV . 3A
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00V/600V
E80276
54ION
E80276
CR3PM
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TF861S
Abstract: tf841s TF821S
Text: TO-220F 8A Thyristor TF821S, TF841S, TF861S • Features External Dimensions φ 3.3±0.2 ●Gate trigger current: IGT=15mA max ●Isolation voltage: VISO=1500V 50Hz Sine wave, RMS 13.0 min ●UL approved type available 3.9±0.2 0.8±0.2 16.9± 0.3 ●Average on-state current: IT(AV)=8A
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O-220F
TF821S,
TF841S,
TF861S
TF861S
tf841s
TF821S
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Untitled
Abstract: No abstract text available
Text: TO-220F 3A Thyristor TF321S, TF341S, TF361S • Features External Dimensions φ 3.3±0.2 ●Gate trigger current: IGT=15mA max 13.0 min ●Isolation voltage: VISO=1500V 50Hz Sine wave, RMS 0.2 0.2 3.9± 0.8± 16.9± 0.3 ●Average on-state current: IT(AV)=3A
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O-220F
TF321S,
TF341S,
TF361S
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TF541S
Abstract: TF521S TF561S
Text: TO-220F 5A Thyristor TF521S, TF541S, TF561S • Features External Dimensions φ 3.3±0.2 ●Gate trigger current: IGT=15mA max C 0.5 1.35±0.15 1.35±0.15 +0.2 0.85 – 0.1 3.9± 13.0 min ●UL approved type available 0.2 a b 0.2 ●Isolation voltage: VISO=1500V 50Hz Sine wave, RMS
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O-220F
TF521S,
TF541S,
TF561S
TF541S
TF521S
TF561S
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TF821S
Abstract: TF861S
Text: TO-220F 8A Thyristor TF821S, TF841S, TF861S • Features External Dimensions ●Gate trigger current: IGT=15mA max ●Isolation voltage: VISO=1500V 50Hz Sine wave, RMS 13.0 min ●UL approved type available 0.2 0.2 3.9± 0.8± 0.3 16.9± 0.2 8.4± ●Repetitive peak off-state voltage: VDRM=200, 400, 600V
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O-220F
TF821S,
TF841S,
TF861S
TF821S
TF861S
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TF521S
Abstract: No abstract text available
Text: TO-220F 5A Thyristor TF521S, TF541S, TF561S • Features External Dimensions φ 3.3±0.2 0.3 16.9± ●Gate trigger current: IGT=15mA max ●Isolation voltage: VISO=1500V 50Hz Sine wave, RMS 13.0 min ●UL approved type available 0.2 0.2 3.9± 0.8± ●Repetitive peak off-state voltage: VDRM=200, 400, 600V
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O-220F
TF521S,
TF541S,
TF561S
TF521S
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TM883S-L
Abstract: TM883S 2T23
Text: TO-220F 8A Triac TM883S-L • Features External Dimensions ●Gate trigger current: IGT =30mA max MODE , , 13.0 min ●Isolation voltage: VISO=1500V (50Hz Sine wave, RMS) 0.2 0.2 3.9± 0.8± 0.3 16.9± 0.2 8.4± ●RMS on-state current: I T(RMS) =8A 10.0
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O-220F
TM883S-L
TM883S-L
TM883S
2T23
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TM583S-L
Abstract: TM583S tm583sl triac 800V 1A triac 1500v
Text: TO-220F 5A Triac TM583S-L • Features External Dimensions ●Gate trigger current: IGT =20mA max MODE , , 13.0 min ●Isolation voltage: VISO=1500V (50Hz Sine wave, RMS) 0.2 0.2 3.9± 0.8± 0.3 16.9± 0.2 8.4± ●RMS on-state current: I T(RMS) =5A 10.0
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O-220F
TM583S-L
TM583S-L
TM583S
tm583sl
triac 800V 1A
triac 1500v
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CR3PM-12
Abstract: CR3PM-12-A8 PRSS0003AA-A CR3PM-12A
Text: Preliminary Datasheet CR3PM-12 R07DS0113EJ0300 Previous: REJ03G0357-0200 Rev.3.00 Sep 13, 2010 Thyristor Low Power Use Features • Insulated Type Glass Passivation Type UL Recognized : Yellow Card No. E223904 IT (AV) : 3 A VDRM : 600 V
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CR3PM-12
R07DS0113EJ0300
REJ03G0357-0200)
E223904
PRSS0003AA-A
O-220F)
R07DS0119044
CR3PM-12
CR3PM-12-A8
PRSS0003AA-A
CR3PM-12A
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rgk 20
Abstract: rgk 20/1 rgk 66 rgk 30 rgk 20/2 Scans-048 RGK20 DSAGER00039
Text: Vergleichstabelle verschiedener Relaistypen und -arten Typ Erregerspannung [V] Leistungsaufnahme [W] maximale Schaltspannung [V] Schutzgaskontaktrelais 11GK 20 UGK 30 RGK 66 4; 6; 12; 18; 24 «0,18* «0,35* 2; 4; 6; 18 . 24 «0,25* «0,35* 12; 48; 60 110 150 ~
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TK-212
Abstract: tk3160 TK1406V TK2140 TK3120 TK1401 TK1402 TK1414 TK2120 tk2160
Text: Caractéristiques électriques Electrical characteristics Valeurs limites Absolute max. ratings >TSM vdw m TY PE S 'o vrw m V rsM 10ms Vq t 'g t Ih RGK = oo V TM ,amb = 25°C <RM@ V DWM v rw m (A) 140 A eff (rms) TK1401 TK1402 TK1404 TK1406 TK1408 TK1410
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000A2s
TK1401
TK1402
TK1404
TK1406
TK1408
TK1410
TK1412
TK1414
TK1416
TK-212
tk3160
TK1406V
TK2140
TK3120
TK2120
tk2160
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Untitled
Abstract: No abstract text available
Text: RC7331/32 RC7331/32 Active Load V,SINK anc* ^ S O U R C E to current conversion is 10 mA per volt with RgR and RgK equal to 1 k il This voltage to current conversion is performed within the RC7331/32 Active Loads and the low bias current re quired (5.0 jiA typ.) allows for the setting of output current
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RC7331/32
RC7331/32
RC7331
AD1315
RC7331QA
RC7332
10QtoGND
RC7332.
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SG1000R22
Abstract: RGK20 Gate Turn-off Thyristor 100V 1000A gate turn-off DT350
Text: SG1000R22 CHOPPER, GATE TURN-OFF THYRISTOR SILICON DIFFUSED TYPE INVERTER, MOTOR CONTROL APPLICATION. Unit in mm F E ATURES: Repetitive Peak Off-State Voltage : V|}j>jj=1300V Repetitive Peak Reverse Voltage : V r r m =100V R.M.S On-State Current : It RMS = 250A
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SG1000R22
00A//is
50V//is
SG1000R22
RGK20
Gate Turn-off Thyristor 100V 1000A
gate turn-off
DT350
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