Untitled
Abstract: No abstract text available
Text: 4-1. Thyristors Thyristors Absolute Maximum Ratings Parameter Repetitive Peak Off-state voltage Non-repetitive Peak Off-state voltage Tj = –40 to Tjmax RGK = 1kΩ VDRM V VDSM (V) TF321S 200 300 TF341S 400 500 Type No. Electric Characteristics Mean On-state
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TF541S-A
TF561S-A
TF321M
TF341M
TF361M
TF521M
TF541M
TF561M
TF821M
TF841M
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TF541M
Abstract: TF561S-A TF861S TM1661S-L TM1261S-L TM861s tf521s TF541M DATASHEET tm361s tfd312s-o
Text: 4 Thyristors 4-1. Thyristors 4-2. Triacs 4-3. PNPN Switch 31 4-1. Thyristors Thyristors Absolute Maximum Ratings Parameter Repetitive Peak Off-state voltage Non-repetitive Peak Off-state voltage Tj = –40 to Tjmax RGK = 1kΩ VDRM V VDSM (V) TF321S 200
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TF341S
TF541M
TF561S-A
TF861S
TM1661S-L
TM1261S-L
TM861s
tf521s
TF541M DATASHEET
tm361s
tfd312s-o
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2N2329
Abstract: 2N2327 2N2328
Text: 2N2327 thur 2N2329 SILICON THYRISTORS All-diffused PNPN thyristors designed for grating operation in mA/µA signal or detection circuits . MAXIMUM RATINGS * TJ=125°C unless otherwise noted, RGK=1000Ω Symbol VRSM(REP) VRSM(NON-REP) IT(RMS) ITSM Ratings
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2N2327
2N2329
2N2327
2N2328
2N2329
2N2328
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CR100-6
Abstract: 125OC MMBT-CR100-6
Text: MMBT-CR100-6 G A K Absolute Maximum Ratings Ta = 25 OC Rating Peak Repetitive Forward and Reverse Blocking Voltage 1) (TJ=25 to 125OC, RGK=1KΩ) Forward Current RMS (All Conduction Angles) Peak Forward Surge Current, (1/2 Cycle, Sine Wave, 60Hz) Circuit Fusing (t=8.3ms)
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MMBT-CR100-6
125OC,
120PPS)
CR100-6
125OC
MMBT-CR100-6
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VOLTAGE-60
Abstract: No abstract text available
Text: COMSET SEMICONDUCTORS 2N2322 thru 2N2326 SILICON THYRISTORS All-diffused PNPN thyristors designed for grating operation in mA/µA signal or detection circuits MAXIMUM RATINGS * TJ=125°C unless otherwise noted, RGK=1000Ω Symbol VRSM(REP) VRSM(NON-REP)
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2N2322
2N2326
2N2322
2N2323
VOLTAGE-60
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Untitled
Abstract: No abstract text available
Text: DIGITRON SEMICONDUCTORS BR103 SILICON PLANAR THYRISTOR Available Non-RoHS standard or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. MAXIMUM RATINGS (TJ = -40 to +125°C, RGK = 1000 Ω)
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BR103
MIL-PRF-19500,
40kHz
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MMBT-CR100-6
Abstract: 125OC
Text: MMBT-CR100-6 G A K Absolute Maximum Ratings Ta = 25 OC Rating Peak Repetitive Forward and Reverse Blocking Voltage 1) (TJ=25 to 125OC, RGK=1KΩ) Forward Current RMS (All Conduction Angles) Peak Forward Surge Current, (1/2 Cycle, Sine Wave, 60Hz) Circuit Fusing (t=8.3ms)
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MMBT-CR100-6
125OC,
120PPS)
MMBT-CR100-6
125OC
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XL1225
Abstract: XL1225 equivalent XL1225 transistor XL1225 TO-92
Text: ST XL1225 G Marking: A K STXL 1225 XX A TO-92 Plastic Package Weight approx. 0.19g MAXIMUM RATINGS Ta=25°C unless otherwise noted. Rating Symbol Repetitive Peak Off-State Voltage VDRM (TJ=40 to 125℃, RGK=1KΩ) RMS On-State Current Value 380 Unit Volts
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XL1225
XL1225
XL1225 equivalent
XL1225 transistor
XL1225 TO-92
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XL1225
Abstract: XL1225 equivalent XL1225 TO-92 XL1225 transistor IT08A
Text: ST XL1225 G Marking: A K STXL 1225 XX A TO-92 Plastic Package Weight approx. 0.19g MAXIMUM RATINGS Ta=25°C unless otherwise noted. Rating Repetitive Peak Off-State Voltage (TJ=40 to 125℃, RGK=1KΩ) RMS On-State Current Symbol VDRM Value 380 Unit Volts
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XL1225
XL1225
XL1225 equivalent
XL1225 TO-92
XL1225 transistor
IT08A
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2N2325
Abstract: 2N2324 2N2326 2N2322 2N2323
Text: 2N2322 thru 2N2326 SILICON THYRISTORS All-diffused PNPN thyristors designed for grating operation in mA/µA signal or detection circuits MAXIMUM RATINGS * TJ=125°C unless otherwise noted, RGK=1000Ω Symbol VRSM(REP) VRSM(NON-REP) IT(RMS) ITSM Ratings Peak reverse blocking voltage (1)
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2N2322
2N2326
2N2322
2N2323
2N2324
2N2325
2N2325
2N2324
2N2326
2N2323
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XL1225
Abstract: XL1225 transistor XL1225 equivalent XL1225 TO-92 marking code 724 g 1225XX IT08A
Text: ST XL1225 G Marking: A K STXL 1225 XX A TO-92 Plastic Package Weight approx. 0.19g MAXIMUM RATINGS Ta=25°C unless otherwise noted. Rating Symbol Repetitive Peak Off-State Voltage VDRM (TJ=40 to 125℃, RGK=1KΩ) RMS On-State Current Value 380 Unit Volts
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XL1225
XL1225
XL1225 transistor
XL1225 equivalent
XL1225 TO-92
marking code 724 g
1225XX
IT08A
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Untitled
Abstract: No abstract text available
Text: FS01.A SENSITIVE GATE SCR TO92 Plastic On-State Current Gate Trigger Current 0.8 Amp < 200 µA Off-State Voltage 200 V to 800 V K GA This series of Silicon Controlled Rectifiers uses a high performance PNPN technology. FS01.A This part is intended for general purpose
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Untitled
Abstract: No abstract text available
Text: FS01.N SENSITIVE GATE SCR SOT223 Plastic On-State Current Gate Trigger Current 0.8 Amp < 200 µA Off-State Voltage A K A G 200 V ÷ 600 V This series of Silicon Controlled Rectifiers uses a high performance PNPN technology. This part is intended for general purpose
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OT223
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XL0840
Abstract: XL08
Text: XL0840 SENSITIVE GATE 0.8A SCRs A MAIN FEATURES Symbol Value Unit IT RMS 0.8 A VDRM 400 V IGT 200 µA G K DESCRIPTION Thanks to its highly sensitive triggering levels, the XL0840 device is suitable for all high volumes applications where the available gate current is limited,
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XL0840
XL0840
XL08
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CR02AM
Abstract: 103 1KV SCR TRIGGER PULSE 3 phase cr02am equivalent CR02AM1 cr02a 3 phase 100A SCR CONNECTION CR02AM-1 104 1KV SCR TRIGGER PULSE circuit
Text: CR02AM Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Lead-Mount, Phase Control SCR 0.3 Amperes/400 Volts OUTLINE DRAWING B B A E E ➂➁➀ D C Features: □ Planar Passivation CIRCUMSCRIBE CIRCLE F - DIA. □ Short Turn-on Time –
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CR02AM
Amperes/400
CR02AM
103 1KV
SCR TRIGGER PULSE 3 phase
cr02am equivalent
CR02AM1
cr02a
3 phase 100A SCR CONNECTION
CR02AM-1
104 1KV
SCR TRIGGER PULSE circuit
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X0405MF
Abstract: SCR x0405mf X0402MF X0402NF X0405NF X0402N x0402
Text: X04 Series 4A SCRS SENSITIVE MAIN FEATURES: A Symbol Value Unit IT RMS 4 A VDRM/VRRM 600 and 800 V IGT 50 to 200 µA G K DESCRIPTION Thanks to highly sensitive triggering levels, the X04 SCR series is suitable for all applications where the available gate current is limited, such as
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O202-3
X04xxF)
X0405MF
SCR x0405mf
X0402MF
X0402NF
X0405NF
X0402N
x0402
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2N5064
Abstract: 2N5060 2N5062 SILICON CONTROL RECTIFIER 2N5063 "Silicon Controlled Rectifier" 2N5061/2N5062 2N5064 equivalent 2N5061 2N5062
Text: Central 2N5060 THRU 2N5064 TM Semiconductor Corp. SILICON CONTROLLED RECTIFIER 0.8 AMP, 30 THRU 200 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5060 series types are epoxy molded Silicon Controlled Rectifiers designed for control systems and sensing circuit applications.
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2N5060
2N5064
2N5060
2N5061
2N5062
2N5063
25-August
2N5064
2N5062 SILICON CONTROL RECTIFIER
"Silicon Controlled Rectifier"
2N5061/2N5062
2N5064 equivalent
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P01xxN
Abstract: p1y sot223 SCR p01 P0102DA P0102DN P0102MA P0102MN P0111DA P0111DN P0111MA
Text: P01 Series 0.8A SCRs SENSITIVE MAIN FEATURES: A Symbol Value Unit IT RMS 0.8 A VDRM/VRRM 400 and 600 V IGT 5 to 200 µA G K DESCRIPTION Thanks to highly sensitive triggering levels, the P01 SCR series is suitable for all applications where available gate current is limited, such as
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P01xxA)
OT-223
P01xxN)
P01xxN
p1y sot223
SCR p01
P0102DA
P0102DN
P0102MA
P0102MN
P0111DA
P0111DN
P0111MA
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rgk 20
Abstract: rgk 20/1 rgk 66 rgk 30 rgk 20/2 Scans-048 RGK20 DSAGER00039
Text: Vergleichstabelle verschiedener Relaistypen und -arten Typ Erregerspannung [V] Leistungsaufnahme [W] maximale Schaltspannung [V] Schutzgaskontaktrelais 11GK 20 UGK 30 RGK 66 4; 6; 12; 18; 24 «0,18* «0,35* 2; 4; 6; 18 . 24 «0,25* «0,35* 12; 48; 60 110 150 ~
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TF561S
Abstract: TF541S
Text: THYRISTORS Electrical Characteristics Absolute M axim um Ratings Repetitive Peak Non-Repetitive Off-State Peak Off-State Voltage Voltage T ,= -40°C to T „ s Rgk= 1k£î Mean On-State Current Surge On-State Current 50Hz Half-Cycle N on-Repetitive 50Hz Sinewave
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TF321S
TF341S
TF361S
TF521S
TF541S
TF561S
TF821S
TF841S
TF541S-A
102-C)
TF541S
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LP 1610
Abstract: CTH6 SCR 25a CSA408 CSH640 CTH640 1k ohms
Text: This TO-220 Material SCR AND TRIACS Copyrighted ru u LP UJ 111 _0 -C Maximum Ratings DEVICE VDRU IT RMS IT(»V) VGBM Electrical Characteristics ISR RGK= IDRM IGU PG|AV) lOuSm ax 20m Sm ax VT 6 (Ta=25°C, U nless Otherwise Specified) IT VT(T0) rT VGT IGT 0 VD
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O-220
20mSmax
67xVDRM,
VFU35V,
CTH640
10uSmax
LP 1610
CTH6
SCR 25a
CSA408
CSH640
1k ohms
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TK-212
Abstract: tk3160 TK1406V TK2140 TK3120 TK1401 TK1402 TK1414 TK2120 tk2160
Text: Caractéristiques électriques Electrical characteristics Valeurs limites Absolute max. ratings >TSM vdw m TY PE S 'o vrw m V rsM 10ms Vq t 'g t Ih RGK = oo V TM ,amb = 25°C <RM@ V DWM v rw m (A) 140 A eff (rms) TK1401 TK1402 TK1404 TK1406 TK1408 TK1410
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000A2s
TK1401
TK1402
TK1404
TK1406
TK1408
TK1410
TK1412
TK1414
TK1416
TK-212
tk3160
TK1406V
TK2140
TK3120
TK2120
tk2160
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Untitled
Abstract: No abstract text available
Text: SANKEN ELECTRIC CO L T » 3 I THYRISTORS, 0000548 b E3SAKJ T-zs-»s T H Y R IS T O R S T - 4 * 3 - 2 3 Insulation withhold voltage Maximum ratings Surge ON current Tj=T]m in~Tjm ax RGK=1kn 50Hz half sine wave Continuous power application 50Hz half sine wave
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MT-25
O-220)
STA203A
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tls 106-6
Abstract: CB-274
Text: o sensitive gate thyristors th y ris to rs sensibles THOMSON-CSF d v /d t T .m b = 25 °C Types •o Vr r m Ir m @ V r r m ■t s m ■d m @ V d r m V G T 10 m s Tj m a x rGk vdrm A 4 Arms / TLS TLS TLS TLS TLS T connex. 106-05, TLS 106-1 , TLS 106-2 , TLS
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CB-274)
tls 106-6
CB-274
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