RIA 39 TRANSISTOR Search Results

RIA 39 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

RIA 39 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: or el tA PRODUCTS INC. INDUCTORS 13402 South 71 Highway/Grandview, MO 64030/ 816 761-6314 TWX 910-777-7037 MINI-L HERMETICALLY SEALED RF INDUCTORS TG, TH SERIES S e rie s A m ax. W e ig h t TG TH .3 9 0 .350 .0 6 o z . .0 7 o z . The TG and TH series offer high “ Q ” inductors in a TQ-5 transistor can con	OCR Scan	HP4342A MIL-C-15305,	PDF
MTP10N06E Abstract: 221A-04 72SM AN569 MTM10N06E evod Text: IM E D I MOTOROLA SC X ST R S /R F MOTOROLA • I b3t,72SM 00^0033 T \| 7 3 3 7 - a SEMICONDUCTOR TECHNICAL DATA MTM10N06E MTP10N06E Designer's Data Sheet TM OS IV Pow er Field Effect Transistors N-Channel Enhancement-Mode Silicon Gate T M O S PO W ER F ET s	OCR Scan	0Cn0G33 MTM10N06E 221A04 MTP10N06E MTP10N06E 221A-04 72SM AN569 MTM10N06E evod	PDF
Untitled Abstract: No abstract text available Text: HM6216255HI Series 4M high Speed SRAM 256-kword x 16-bit HITACHI ADE-203-1037A (Z) Rev. 1.0 Apr. 15, 1999 Description The HM6216255HI Series is a 4-M bit high speed static RAM organized 256-k word x 16-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high	OCR Scan	HM6216255HI 256-kword 16-bit) ADE-203-1037A 256-k 16-bit. 400-mil 44-pin	PDF
NFM61 SP Abstract: tekelec TA 355 TEKELEC te 358 Text: DISCRETE SEMICONDUCTORS S^EET BLV2045N UHF power transistor P relim inary specification Philips Semiconductors 1998 Nov 19 PHILIPS Philips Semiconductors Preliminary specification UHF power transistor BLV2045N FEATURES PINNING - SOT39QA • Em itter ballasting resistors fo r optim um tem perature	OCR Scan	BLV2045N BLV2045N OT39QA SCA60 /printrun/ed/pp10 NFM61 SP tekelec TA 355 TEKELEC te 358	PDF
transistor BC 153 Abstract: TRANSISTOR BC 141 BCY41 BC transistor series transistor BC SERIES TRANSISTOR BC140 transistor BC 310 bc 103 transistor transistor bc 103 transistor C719 Text: ESC D • fl23SbQS 0004104 2 « S I E G . NPN Silicon Transistors SIEMENS AKTIENGESELLSCHAF 3c 140 BC 141 BC 140 and BC 141 are epitaxial NPN silicon transistors in TO 39 case 5 C 3 OIN 41873 . The collector is electrically connected to the case. The transistors are intended for use in AF	OCR Scan	23SbQS 0Q04104 BC1401> Q60203-X140 Q60203-X140-V6 Q60203-X140-V10 Q60203-X140-V16 Q60203-X140-P 140/BC160 Q62702-C228-S2 transistor BC 153 TRANSISTOR BC 141 BCY41 BC transistor series transistor BC SERIES TRANSISTOR BC140 transistor BC 310 bc 103 transistor transistor bc 103 transistor C719	PDF
LS395A Abstract: No abstract text available Text: 4-Bit Cascadable Shift Registers with 3-State Outputs LS395A FEATURES • PIN-OUT DIAGRAM T h re e -S ta te ,4 -B it, Cascadable, Parallel-ln, LS395A P arallel-Out Registers ■ Schottky-D iode-C lam ped Transistors ■ Lo w Power Dissipation . . . 7 5m W Typical Enabled	OCR Scan	LS395 LS395A LS395A	PDF
transistor rf vhf Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line TPV394A VHF Linear Power Transistor , . . d esig ned s p e c ific a lly for band III T V tra n sp o se rs and tran sm itte r am p lifie rs. The T P V 39 4 A is in tern ally m atched and u se s gold m etallized d ie w ith d iffused em itter b allast	OCR Scan	TPV394A transistor rf vhf	PDF
741 LEM Abstract: AM/amplifier LEM 741 Text: DISCRETE SEMICONDUCTORS S^EET BLV2045N UHF power transistor P relim inary specification Philips Semiconductors 1999 A p r 23 PHILIPS Philips Semiconductors Preliminary specification UHF power transistor BLV2045N FEATURES PINNING - SOT39QA • Em itter ballasting resistors fo r optim um tem perature	OCR Scan	BLV2045N BLV2045N OT39QA SCA63 741 LEM AM/amplifier LEM 741	PDF
7507H Abstract: No abstract text available Text: //P D 7 5 0 7 H /0 8 H /7 5 C G 0 8 H E 4-BIT, SINGLE-CHIP CMOS MICROCOMPUTERS SEC NEC Electronics Inc. M ay 1987 Description T h e a<PD7507H, aiP D 7508H , and //P D 7 5 C G 0 8 H E are p in -c o m p a tib le , h ig h -s p e e d 4.19 M H z , 4 -b it, s in g le	OCR Scan	PD7507H, 7508H /PD7500 7508H NECEL-000543 7507H	PDF
Untitled Abstract: No abstract text available Text: jy lyjxivM 19-0172; Rev 5; 10/96 SV, Low -Pow er, V oltage-O utput, S e ria l 12-B it DACs G enera / D escrip tio n The MAX538's buffer is fixed at a gain of 1 and the MAX539's buffer at a gain of 2. The MAX531 's internal op amp may be configured for a gain of 1 or 2, as well	OCR Scan	MAX538 MAX539 MAX531 MAX531) MAX538/MAX539) MAX531/MAX539) 0D15013	PDF
2N6796 HARRIS Abstract: 2n6796 jantx qpl-19500 2N6756 2N6796 diode332 2N6770 JANTX 2N6897 Text: Standard Power MOSFETs 2N6796 F ile N u m b e r 1594 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 8.0A, 100V ros on = 0.18 fi Features: • SOA is po w e r-d issip ation lim ite d	OCR Scan	2N6796 2N6796 O-205AF O-2I35AF 2N6800 T0-205AF 2N6796 HARRIS 2n6796 jantx qpl-19500 2N6756 diode332 2N6770 JANTX 2N6897	PDF
MRF650 Abstract: No abstract text available Text: MOTOROLA wm S E M IC O N D U C T O R TECHNICAL DATA M R F6 50 The RF Line 2 N P N S il i c o n R F P o w e r T r a n s is t o r 50 WATTS, 512 MHz RF POWER TRANSISTOR NPN SILICON . . designed fo r 12.5 V o lt UHF large-signal a m p lifie r a pp licatio n s in ind u stria l and	OCR Scan	MRF650 MRF650	PDF
U880D Abstract: UB880D UB855d U855D zilog z80ctc itE 8560 schiebe UB857 U857D UB857D Text: r ii iiH! k : j e l e l - c f a n e D n i l - c Mikroprozessorsystem U 8 8 0 □ Program m speicher Arb e its speicher DMA □ Peripherie Mikroprozessorsystem U 880 Das M ikroprozessorsystem U 880 umfaß t ein kom plettes S ortim ent an M ikrorechnerbausteinen, welches so konzipie rt ist, daß kom plette M ikrorechner-	OCR Scan	IV-26-10 U880D UB880D UB855d U855D zilog z80ctc itE 8560 schiebe UB857 U857D UB857D	PDF
PL 431 transistor Abstract: BLX65 FX1115 transistor w 431 y 431 transistor transistor 1002 IEC134 0-22 p trimmer h a 431 transistor transistor H-R Text: PHILIPS INTERNATIONAL 711DÖSb 0Db3SPD 5 TB I IPHIN t>5E D BLX65 U.H.F./V.H.F. TRANSMITTING TRANSISTOR N-P-N transistor intended for use in class-B and C operated mobile, industrial and military transmitters with a supply voltage of 13,8 V. It has a TO -39 metal envelope with the collector connected to the	OCR Scan	711002b BLX65 O-39/1; PL 431 transistor BLX65 FX1115 transistor w 431 y 431 transistor transistor 1002 IEC134 0-22 p trimmer h a 431 transistor transistor H-R	PDF

Untitled Abstract: No abstract text available Text: O K I Semiconductor 11801163 40-Bit Anode Driver GENERAL DESCRIPTION The MSC1163 is a monolithic IC using the Bi-CMOS process for hybridizing CMOS and bipolar transistors on the same chip. The logic portion such as the input stage, shift register and latch is	OCR Scan	40-Bit MSC1163 60-pin	PDF
LM 886 IC chip Abstract: TEKELEC te 358 Text: DISCRETE SEMICONDUCTORS BLV2045N UHF power transistor P relim inary specification Philips Sem iconductors 1998 O ct 01 PHILIPS Philips Semiconductors Preliminary specification UHF power transistor BLV2045N FEATURES PINNING - SOT39QA • Em itter ballasting resistors fo r optim um te m perature	OCR Scan	BLV2045N BLV2045N OT39QA LM 886 IC chip TEKELEC te 358	PDF
QM2D Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN S ilic o n P ush-Pull RF P o w e r T ra n sisto r 100 WATTS, 30-500 MHz CONTROLLED "Q" BROADBAND PUSH-PULL RF POWER TRANSISTOR NPN SILICON . . . designed prim arily for wideband large-signal output and driver amplifier stages	OCR Scan	MRF393 QM2D	PDF
IRG4BC20U Abstract: IRG4BC20 Text: PD - 91448D IRG4BC20U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than	Original	91448D IRG4BC20U O-220AB O-220AB IRG4BC20U IRG4BC20	PDF
radiator 0,019 Abstract: 2n5578 Text: •■i ■1 Power Transistors Hometaxial-Base n-p-n Type Selection Charts cont’d hFE \ / a w~ (CMC1 CEO V CEX V VcE^^- V 'C E X -m A ' ‘c A V CE V Tem p.—°C 25 V CE V •c A 2N5578 FAMILY (n-p-n) High Current, High Power f y = 0.4 MHz min; P y = 300 W max	OCR Scan	2N5578 2N5575 2N5786 2N5783 2N5785 O-39/TO-205MD O-5/TO-205M 2N6103 radiator 0,019	PDF
IRG4BC20S Abstract: RIA 39 transistor Text: PD - 9.1597 IRG4BC20S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than	Original	IRG4BC20S O-220AB O-220AB IRG4BC20S RIA 39 transistor	PDF
MRF392 Abstract: No abstract text available Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MRF392 The RF Line NPN Silicon Push-Pull RF Power Transistor . d e sign e d prim arily for w id e b a n d large-signal output an d driver am plifier sta ge s in the 3 0 - 5 0 0 M H z frequency range. • Specified 28 Volt, 400 M H z Characteristics —	OCR Scan	MRF392 MRF392	PDF
Untitled Abstract: No abstract text available Text: FHX35X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.2dB Typ. @ f=12G Hz High Associated Gain: 10.0dB (Typ.)@ f=12G Hz Lg s 0.25\|iim, W g = 280\|iim Gold G ate M etallization for High Reliability DESCRIPTION The FHX35X is a High Electron M obility Transistor(H EM T) intended	OCR Scan	FHX35X FHX35X 2-18G FCSI0598M200	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRA1000-7L The RF Line UHF P o w er T ran sisto r . , . designed prim arily for wideband, large-signal output and driver am plifier stages to 1000 MHz. 9 dB TO 1000 M Hz 7 WATTS BROADBAND UHF POWER TRANSISTOR • Designed for Class A Linear Power Amplifiers	OCR Scan	MRA1000-7L Sym15	PDF
800w audio amplifier circuit diagram Abstract: opa marking 848 CPC1017 d1n4002 CPC1017N 40riA Text: XT XTR300 R3 00 SBOS336C – JUNE 2005 – REVISED JUNE 2011 www.ti.com Industrial Analog Current/Voltage OUTPUT DRIVER Check for Samples: XTR300 FEATURES 1 • 2 • • • • • • • • • • USER-SELECTABLE: Voltage or Current Output +40V SUPPLY VOLTAGE	Original	XTR300 SBOS336C 800w audio amplifier circuit diagram opa marking 848 CPC1017 d1n4002 CPC1017N 40riA	PDF

RIA 39 TRANSISTOR Search Results

RIA 39 TRANSISTOR Result Highlights (5)

RIA 39 TRANSISTOR Datasheets Context Search

Untitled

MTP10N06E

Untitled

NFM61 SP

transistor BC 153

LS395A

transistor rf vhf

741 LEM

7507H

Untitled

2N6796 HARRIS

MRF650

U880D

PL 431 transistor

Untitled

LM 886 IC chip

QM2D

IRG4BC20U

radiator 0,019

IRG4BC20S

MRF392

Untitled

Untitled

800w audio amplifier circuit diagram