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    Untitled

    Abstract: No abstract text available
    Text: FM24W256 256Kb Wide Voltage Serial F-RAM Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  38 year Data Retention (@ +75ºC)  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


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    FM24W256 256Kb FM24W256 256-kilobit FM24W256, FM24W256-EG A00002G1 RIC1037 PDF

    memory 256k i2c

    Abstract: FM24W256
    Text: Preliminary FM24W256 256Kb Wide Voltage Serial F-RAM Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 38 year Data Retention (@ +75ºC) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original
    FM24W256 256Kb FM24W256 256-kilobit FM24W256, FM24W256-EG A00002G1 RIC1037 memory 256k i2c PDF

    FM24W256

    Abstract: FM24W256-G FM24W256-EG AEC-Q100-002 fm24w256gtr SOIC EEPROM RIC1037
    Text: Preliminary FM24W256 256Kb Wide Voltage Serial F-RAM Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 38 year Data Retention (@ +75ºC) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original
    FM24W256 256Kb FM24W256 FM24W256, FM24W256-EG A00002G1 RIC1037 FM24W256-G FM24W256-EG AEC-Q100-002 fm24w256gtr SOIC EEPROM RIC1037 PDF

    fm24w256

    Abstract: 6G p FM24W256-G TVR 07 spec
    Text: Pre-Production FM24W256 256Kb Wide Voltage Serial F-RAM Features 256K bit Ferroelectric Nonvolatile RAM Organized as 32,768 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 38 year Data Retention (@ +75ºC) NoDelay Writes Advanced High-Reliability Ferroelectric Process


    Original
    FM24W256 256Kb FM24W256 256-kilobit 6G p FM24W256-G TVR 07 spec PDF

    Untitled

    Abstract: No abstract text available
    Text: Pre-Production FM24W256 256Kb Wide Voltage Serial F-RAM Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  38 year Data Retention (@ +75ºC)  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original
    FM24W256 256Kb FM24W256, FM24W256-EG A00002G1 RIC1037 FM24W256 PDF

    fm24w256-eg

    Abstract: up board 10th 2012 FM24W256-G
    Text: Pre-Production FM24W256 256Kb Wide Voltage Serial F-RAM Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  38 year Data Retention (@ +75ºC)  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original
    FM24W256 256Kb FM24W256 256-kilobit FM24W256, FM24W256-EG A00002G1 RIC1037 up board 10th 2012 FM24W256-G PDF

    FM24W256

    Abstract: No abstract text available
    Text: Preliminary FM24W256 256Kb Wide Voltage Serial F-RAM Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  38 year Data Retention (@ +75ºC)  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original
    FM24W256 256Kb FM24W256 256-kilobit FM24W256, FM24W256-EG A00002G1 RIC1037 PDF