Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    RIC7113L4 Search Results

    SF Impression Pixel

    RIC7113L4 Price and Stock

    International Rectifier RIC7113L4SCS

    HALF BRIDGE BASED MOSFET DRIVER, 2A, CMOS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components RIC7113L4SCS 1
    • 1 $750
    • 10 $700
    • 100 $700
    • 1000 $700
    • 10000 $700
    		Buy Now

    RIC7113L4 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RIC7113L4 International Rectifier RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER Original PDF

    RIC7113L4 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PD-93921D RIC7113L4 RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER Features Product Summary n Total dose capability to 100K Rad Si n Floating channel designed for bootstrap operation n Fully operational to +400V n Tolerant to negative transient voltage


    Original     		PDF PD-93921D RIC7113L4 RIC7113L4 MO-036AB

    MO-036AB

    Abstract: IRF820A RIC7113 RIC7113L4
    Text: PD-93921B RIC7113L4 RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER Product Summary Features n Total dose capability to 100K Rad Si n Floating channel designed for bootstrap operation n Fully operational to +400V n Tolerant to negative transient voltage


    Original     		PDF PD-93921B RIC7113L4 MO-036AB IRF820A RIC7113 RIC7113L4

    RIC7113L4

    Abstract: radiation hardened IGBT RIC7113 IRF820A MO-036AB PD-93921
    Text: PD-93921 RIC7113L4 RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER Product Summary Features n Total dose capability to 100K Rad Si n Floating channel designed for bootstrap operation n Fully operational to +400V n Tolerant to negative transient voltage


    Original     		PDF PD-93921 RIC7113L4 Description252-7105 RIC7113L4 radiation hardened IGBT RIC7113 IRF820A MO-036AB PD-93921

    Untitled

    Abstract: No abstract text available
    Text: PD - 93921C RIC7113L4 RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER Features Product Summary n Total dose capability to 100K Rad Si n Floating channel designed for bootstrap operation n Fully operational to +400V n Tolerant to negative transient voltage


    Original     		PDF 93921C RIC7113L4 MO-036AB

    93921C

    Abstract: radiation hardened IGBT RIC7113L4 IRF 450 MOSFET IRF820A MO-036AB RIC7113 power supply 400v circuit diagram
    Text: PD - 93921C RIC7113L4 RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER Features Product Summary n Total dose capability to 100K Rad Si n Floating channel designed for bootstrap operation n Fully operational to +400V n Tolerant to negative transient voltage


    Original     		PDF 93921C RIC7113L4 MO-036AB 93921C radiation hardened IGBT RIC7113L4 IRF 450 MOSFET IRF820A RIC7113 power supply 400v circuit diagram

    IRF460

    Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
    Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,


    Original     		PDF 30am-5 44-0-1737-2com DB8029C IRF460 SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065

    TRANSISTOR BO 346

    Abstract: TRANSISTOR sd 346 53NA50 sn78 RIC7113 960e-02 942e 220E-06
    Text: RIC7113 Single Event Effects Test Report January 2000 233 Kansas Street El Segundo CA 90245 Fax-On-Demand 310 252 7100 Website WWW.irf.com International Rectifier Corp. RIC7113 SEE Test Report Table of Contents Introduction . 1


    Original     		PDF RIC7113 RIC7113 5VVCC15V LM317 RIC7113L4 TRANSISTOR BO 346 TRANSISTOR sd 346 53NA50 sn78 960e-02 942e 220E-06

    irf5n5210sc

    Abstract: IRHNA57064SCS IRHM597260 irf5n5210 irhna597160scs irhf7110scs IRHG57110 IRHNA57264SESCS 35CLQ045SCS 12CLQ150SCS
    Text: PD - 94246A IRHG567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET 4# TECHNOLOGY THRU-HOLE MO-036AB Product Summary Part Number IRHG567110 IRHG563110 IRHG567110 IRHG563110 Radiation Level RDS(on) 100K Rads (Si)


    Original     		PDF 4246A IRHG567110 MO-036AB) IRHG563110 MO-036AB O-254AA 22JGQ045SCV irf5n5210sc IRHNA57064SCS IRHM597260 irf5n5210 irhna597160scs irhf7110scs IRHG57110 IRHNA57264SESCS 35CLQ045SCS 12CLQ150SCS

    IRHNA57064SCS

    Abstract: IRHNJ597230SCS IRHNJ9130SCS IRHG6110SCS IRHY7434 IRHE57130SCS 8CLJQ045SCV IRHNJ57034SCS irfy9230 35CLQ045SCS
    Text: PD - 94046B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ597230 200V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNJ597230 100K Rads (Si) IRHNJ593230 300K Rads (Si) RDS(on) 0.505Ω 0.505Ω ID -8.0A -8.0A SMD-0.5


    Original     		PDF 94046B IRHNJ597230 IRHNJ593230 O-254AA 22JGQ045SCV 22GQ100SCV 25GQ045SCS IRHNA57064SCS IRHNJ597230SCS IRHNJ9130SCS IRHG6110SCS IRHY7434 IRHE57130SCS 8CLJQ045SCV IRHNJ57034SCS irfy9230 35CLQ045SCS

    radiation hardened IGBT

    Abstract: RIC7113E4 IRF820A RIC7113 RIC7113L4 PD-93920A
    Text: PD-93920A RIC7113E4 RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER Product Summary Features n Total dose capability to 100K Rad Si n Floating channel designed for bootstrap operation n Fully operational to +400V n Tolerant to negative transient voltage


    Original     		PDF PD-93920A RIC7113E4 radiation hardened IGBT RIC7113E4 IRF820A RIC7113 RIC7113L4 PD-93920A

    Untitled

    Abstract: No abstract text available
    Text: PD-94703B RIC7113A4 RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER Features Product Summary n Total dose capability to 100K Rad Si n Floating channel designed for bootstrap operation n Fully operational to +400V n Tolerant to negative transient voltage


    Original     		PDF PD-94703B RIC7113A4 RIC7113A4

    Untitled

    Abstract: No abstract text available
    Text: PD - 93920B RIC7113E4 RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER Features Product Summary n Total dose capability to 100K Rad Si n Floating channel designed for bootstrap operation n Fully operational to +400V n Tolerant to negative transient voltage


    Original     		PDF 93920B RIC7113E4 LCC-18)

    radiation hardened IGBT

    Abstract: IRF 450 MOSFET 2A mosfet igbt driver stage IRF820A LCC-18 RIC7113 RIC7113E4 RIC7113L4 power supply 400v circuit diagram
    Text: PD - 93920B RIC7113E4 RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER Features Product Summary n Total dose capability to 100K Rad Si n Floating channel designed for bootstrap operation n Fully operational to +400V n Tolerant to negative transient voltage


    Original     		PDF 93920B RIC7113E4 LCC-18) radiation hardened IGBT IRF 450 MOSFET 2A mosfet igbt driver stage IRF820A LCC-18 RIC7113 RIC7113E4 RIC7113L4 power supply 400v circuit diagram

    Untitled

    Abstract: No abstract text available
    Text: PD - 94703A RIC7113A4 RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER Features Product Summary n Total dose capability to 100K Rad Si n Floating channel designed for bootstrap operation n Fully operational to +400V n Tolerant to negative transient voltage


    Original     		PDF 4703A RIC7113A4

    IRF820A

    Abstract: B3 ho transistor IRF 450 MOSFET radiation hardened IGBT power supply 400v circuit diagram 2A mosfet igbt driver stage ric7113a4 RIC7113 RIC7113L4 2A mosfet igbt driver stage 3 phase IGBT gate driver
    Text: PD - 94703A RIC7113A4 RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER Features Product Summary n Total dose capability to 100K Rad Si n Floating channel designed for bootstrap operation n Fully operational to +400V n Tolerant to negative transient voltage


    Original     		PDF 4703A RIC7113A4 IRF820A B3 ho transistor IRF 450 MOSFET radiation hardened IGBT power supply 400v circuit diagram 2A mosfet igbt driver stage ric7113a4 RIC7113 RIC7113L4 2A mosfet igbt driver stage 3 phase IGBT gate driver

    ric7113a4

    Abstract: IRF820A RIC7113 RIC7113L4
    Text: PD - 94703 RIC7113A4 RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER Features Product Summary n Total dose capability to 100K Rad Si n Floating channel designed for bootstrap operation n Fully operational to +400V n Tolerant to negative transient voltage


    Original     		PDF RIC7113A4 ric7113a4 IRF820A RIC7113 RIC7113L4

    Untitled

    Abstract: No abstract text available
    Text: PD-93920C RIC7113E4 RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER Features Product Summary n Total dose capability to 100K Rad Si n Floating channel designed for bootstrap operation n Fully operational to +400V n Tolerant to negative transient voltage


    Original     		PDF PD-93920C RIC7113E4 RIC7113E4 LCC-18)

    IRHNJ597230SCS

    Abstract: international rectifier SMD 30CLJQ100SCS IRHNJ597034SCS IRHG6110SCS IRHNJ57234SESCS IRFE130SCX 35CLQ045SCS IRHNJ597130SCS IRHNJ7430SESCS
    Text: PD - 94047A RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ597130 100V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNJ597130 100K Rads (Si) IRHNJ593130 300K Rads (Si) RDS(on) ID 0.205Ω -12.5A 0.205Ω -12.5A SMD-0.5


    Original     		PDF 4047A IRHNJ597130 IRHNJ593130 O-254AA 22JGQ045SCV 22GQ100SCV 25GQ045SCS IRHNJ597230SCS international rectifier SMD 30CLJQ100SCS IRHNJ597034SCS IRHG6110SCS IRHNJ57234SESCS IRFE130SCX 35CLQ045SCS IRHNJ597130SCS IRHNJ7430SESCS