H11AV2
Abstract: H11AV1A H11AV1M
Text: H11AV1,A H11AV2,A GlobalOptoisolator 6-Pin DIP Optoisolators Transistor Output The H11AV1,A and H11AV2,A devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • Guaranteed 70 Volt V BR CEO Minimum
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H11AV1
H11AV2
P01101866
CR/0117
E90700,
H11AV1A
H11AV1M
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H11AV1
Abstract: H11AV2 H11AV1A H11AV2A H11AV1M
Text: H11AV1,A H11AV2,A GlobalOptoisolator 6-Pin DIP Optoisolators Transistor Output The H11AV1,A and H11AV2,A devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • Guaranteed 70 Volt V BR CEO Minimum
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H11AV1
H11AV2
H11AV2SR2V-M
H11AV2SV-M
P01101866
CR/0117
E90700,
H11AV1A
H11AV2A
H11AV1M
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H23 8 OHM J
Abstract: No abstract text available
Text: HIGH LEVEL DETECTORS, DIRECTIONAL SERIES CH GENERAL INFORMATION: The Series CH Directional Detectors are directional couplers w ith integral detectors. They are used fo r m onitoring power using high level diodes and high directivity couplers w ith o u t disturbing
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H11NXM
Abstract: H11N1M
Text: 6-PIN DIP HIGH SPEED LOGIC OPTOCOUPLERS H11N1-M H11N2-M H11N3-M PACKAGE SCHEMATIC ANODE 1 6 VCC 6 6 CATHODE 2 5 GND 1 1 3 4 VO 6 1 DESCRIPTION The H11NX-M series has a high speed integrated circuit detector optically coupled to an AlGaAs infrared emitting diode.
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H11N1-M
H11N2-M
H11N3-M
H11NX-M
P01101866
CR/0117
E90700,
H11NXM
H11N1M
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216 OPTO SO8
Abstract: MOC216R1 motorola 4n35 Dual opto coupler IC SOIC 8 footprint MOC3052M MOC215/buy/GDZ4.3BD5 H11AA4M H11G2M MOC3081M
Text: Transistor Output Low Input Current These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density
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MOC215,
andC215-M
MOC223-M
MOC3011-M
MOC3021-M
MOC3031-M
MOC3041-M
MOC3051-M
MOC3062-M
MOC3081-M
216 OPTO SO8
MOC216R1
motorola 4n35
Dual opto coupler IC
SOIC 8 footprint
MOC3052M
MOC215/buy/GDZ4.3BD5
H11AA4M
H11G2M
MOC3081M
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H11D1M
Abstract: Dual opto coupler IC MOC3023-M 4N26-M MOC306 MOTOROLA Cross Reference Search H11AA4M 4N32M MOC8050M MOC223M
Text: Transistor Output These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through–the–board mounting.
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MOC211,
MOCC215-M
MOC223-M
MOC3011-M
MOC3021-M
MOC3031-M
MOC3041-M
MOC3051-M
MOC3062-M
MOC3081-M
H11D1M
Dual opto coupler IC
MOC3023-M
4N26-M
MOC306
MOTOROLA Cross Reference Search
H11AA4M
4N32M
MOC8050M
MOC223M
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h11n1 "cross-reference"
Abstract: H11N1M
Text: 6-PIN DIP HIGH SPEED LOGIC OPTOCOUPLERS H11N1-M H11N2-M H11N3-M PACKAGE SCHEMATIC ANODE 1 6 VCC 6 6 CATHODE 2 5 GND 1 1 3 4 VO 6 1 DESCRIPTION The H11NX-M series has a high speed integrated circuit detector optically coupled to an AlGaAs infrared emitting diode.
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H11N1-M
H11N2-M
H11N3-M
H11NX-M
mH11N3SR2M
P01101866
CR/0117
E90700,
h11n1 "cross-reference"
H11N1M
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fairchild 1011 opto
Abstract: cj 6PIN H11L1SR2M H11L1M
Text: 6-PIN DIP OPTOISOLATORS LOGIC OUTPUT H11L1M H11L2M H11L3M DESCRIPTION The H11LX series has a high speed integrated circuit detector optically coupled to a gallium-arsenide infrared emitting diode. The output incorporates a Schmitt trigger, which provides hysteresis for noise immunity and
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H11L1M
H11LX
H11L2M
H11L3M
H11L3-M
P01101866
CR/0117
E90700,
fairchild 1011 opto
cj 6PIN
H11L1SR2M
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B 57 995
Abstract: DL306-XXXTG 347t VL308-436TG
Text: ADVANCED INTERCONNECTIONS Closed Frame LED Sockets 5 Energy W ay, P.O. Box 1019, W est W a rw ick, Rl 02893 • Tel. 4 0 1 -8 2 3 -5 2 0 0 • FAX 4 0 1 -8 23-872 3 o c Closed Frame LED Light Emitting Diode Sockets Co) °< m D> .300 (7.62) o o o o o o ft
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QQ-B-626
QQ-C-533
DL624-435TG
DL628-435TG
DL640-435TG
B 57 995
DL306-XXXTG
347t
VL308-436TG
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BA3406AF
Abstract: c47p
Text: Audio ICs Dual preamplifier with mute function BA3406AF The BA3406AF is a multi-function dual-channel pream plifier with a built-in mute circuit and a tim e-constant switching circu it fo r use w ith metal tape. The ou tput circu its have diodes, and can be connected to other circu its in parallel,
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BA3406AF
BA3406AF
c47p
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OPA77GP
Abstract: OPA77 OPA177EZ OPA77FP OP177EZ OP-07 THERMOCOUPLE AMPLIFIER OPA77G OP-07 OP-177 OPA177
Text: OPA177 OPA77 Precision OPERATIONAL AMPLIFIER FEATURES ● ● ● ● ● APPLICATIONS LOW OFFSET VOLTAGE: 10µV max LOW DRIFT: 0.1µV/°C HIGH OPEN-LOOP GAIN: 130dB min LOW QUIESCENT CURRENT: 1.5mA typ REPLACES INDUSTRY-STANDARD OP AMPS: OP-07, OP-77, OP-177, AD707,
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OPA177
OPA77
130dB
OP-07,
OP-77,
OP-177,
AD707,
OPA177
OPA77
OPA77GP
OPA177EZ
OPA77FP
OP177EZ
OP-07 THERMOCOUPLE AMPLIFIER
OPA77G
OP-07
OP-177
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H11L1M
Abstract: No abstract text available
Text: 6-PIN DIP OPTOISOLATORS LOGIC OUTPUT H11L1M H11L2M H11L3M DESCRIPTION The H11LX series has a high speed integrated circuit detector optically coupled to a gallium-arsenide infrared emitting diode. The output incorporates a Schmitt trigger, which provides hysteresis for noise immunity and
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H11L1M
H11LX
H11L2M
H11L3M
P01101866
CR/0117
E90700,
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Opto Coupler 4N36
Abstract: MOC207R1-M MOTOROLA Cross Reference Search H11D1M E90700 motorola 4N35 opto - coupler MOC206 "cross reference" Surface wave coupler 4N33 "cross reference" MOC205-M
Text: Transistor Output These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through–the–board mounting.
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MOC205,
E90700,
MOC205-M
Opto Coupler 4N36
MOC207R1-M
MOTOROLA Cross Reference Search
H11D1M
E90700
motorola 4N35 opto - coupler
MOC206 "cross reference"
Surface wave coupler
4N33 "cross reference"
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Untitled
Abstract: No abstract text available
Text: Or, Call Customer Service at 1-800-548-6132 USA Only FEATURES APPLICATIONS • LOW OFFSET VOLTAGE: 10|iV max • LOW DRIFT: 0.1|lV/°C • • • • • HIGH OPEN-LOOP GAIN: 130dB min • LOW QUIESCENT CURRENT: 1.5mA typ • REPLACES INDUSTRY-STANDARD OP
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130dB
OP-07,
OP-77,
OP-177,
AD707,
OPA177
OPA77
17313bS
0027A1S
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c1247
Abstract: C1246 c1252 MCT210 Phototransistor with base emitter CI242
Text: PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS MCT210 DESCRIPTION PACKAGE DIMENSIONS j Sl ì u The MCT210 incorporates a NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. The MCT210 has a specified minimum CTR of 50%, saturated, and 150%, unsaturated.
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MCT210
ST1603A
c2079
MCT210
MCT210-Specified
E90700)
10TTI
c1247
C1246
c1252
Phototransistor with base emitter
CI242
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Untitled
Abstract: No abstract text available
Text: BAV105 J V ULTRA HIGH-SPEED DIODE Silicon planar epitaxial, ultra-high speed, high conductance diode in a SOD80C envelope, Q UICK REFERENCE D A T A VR max. 60 V Repetitive peak reverse voltage V RRM max. 60 V Repetitive peak forward current iFRIVI max. 600 mA
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BAV105
OD80C
500T2
OD80C.
100X1
400mA
100XL
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Untitled
Abstract: No abstract text available
Text: 1SV282 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE CATV TUNING • • • • SILICON EPITAXIAL PLANAR TYPE 1SV 282 Unit in mm High Capacitance Ratio : C2 y /C 2 5 Y = 12.5 TYP. Low Series Resistance : rs = 0.6O (TYP.) Excellent C-V Characteristics, and Small Tracking Error.
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1SV282
0014g
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Untitled
Abstract: No abstract text available
Text: PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS MCT210 PACKAGE DIMENSIONS DESCRIPTION The MCT210 incorporates a NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. The MCT210 has a specified minimum CTR of 50%, saturated, and 150%, unsaturated.
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MCT210
MCT210
MCT210â
E90700)
74bbfl51
000bl23
D00L124
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13002 power transistor
Abstract: PS2513-1 PS2513L-1 PS2513L-1-E3 PS2513L-1-E4 PS2513L-1-F3 PS2513L-1-F4 c s 13002 TRANSISTOR
Text: HIGH-SPEED SWITCHING/HIGH ISOLATION VOLTAGE PHOTOCOUPLER SERIES PS2513-1 PS2513L-1 FEATURES DESCRIPTION • HIGH ISOLATION VOLTAGE BV: 5 k Vr.m.s. isolators containing a GaAs light emitting diode and an NPN The PS2513-1 and PS2513L-1 are optically coupled
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PS2513-1
PS2513L-1
PS2513-1
PS2513L-1
PS2513L
13002 power transistor
PS2513L-1-E3
PS2513L-1-E4
PS2513L-1-F3
PS2513L-1-F4
c s 13002 TRANSISTOR
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1N4140
Abstract: 1N4305 diode in 4148 diode 1N4151
Text: I n t e r n a t io n a l S e m ic o n d u c to r , I n c . 1N 4148 1N 4446 thru thru 1N 4154 1N 4454 1N 4305 GENERAL PURPOSE PLANAR DIODES DIFFUSED SILICON PLANAR ELECTRICAL CHARACTERISTICS À at 25°C unless otherwise specified Maximum Maximum »laximum IS I
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1N4148
1N4140
1N4150
1N4151
1N4152
1N4153
1N4154
1N4305
1N4446
1N4447
diode in 4148
diode 1N4151
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Untitled
Abstract: No abstract text available
Text: b b S S ' m 0024363 2T5 « A P X N AMER PHILIPS/DISCRETE BAV105 b?E D J V ULTRA HIGH-SPEED DIODE Silicon planar epitaxial, ultra-high speed, high conductance diode in a SOD80C envelope. QUICK REFERENCE DATA Continuous reverse voltage VR max. Repetitive peak reverse voltage
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BAV105
OD80C
oo343f
7ZI0677
00243AT
100iL
400mA
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OPA77GP
Abstract: OPA177EZ 20w5 OPA77 a77e OPA177 DIE 300CC OP177EZ
Text: OPA177 OPA77 O AVAILABLE IN DIE FEATURES APPLICATIONS • • • • • LOW OFFSET VOLTAGE: 10|iV max LOW DRIFT: 0.1|iV/°C HIGH OPEN-LOOP GAIN: 130dB min LOW QUIESCENT CURRENT: 1.5mA typ REPLACES INDUSTRY-STANDARD OP AMPS: OP-07, OP-77, OP-177, AD707, ETC.
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1-80B-548-6132
130dB
OP-07,
OP-77,
OP-177,
AD707,
OPA177
OPA77
OPA77GP
OPA177EZ
20w5
a77e
OPA177 DIE
300CC
OP177EZ
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A-405
Abstract: RL251 RL257
Text: LESHAN RADIO COMPANY, LTD. RL251 thru RL257 1.FEATURES General Purpose Plastic Rectifiers * Plastic package has Underwriters Laboratory Reverse Voltage 50 to 1000V Forward Current 2.5A Flammability Classification 94V-0 * High temperature metallurgically bonded construction
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RL251
RL257
MIL-S-19500
MIL-STD-750,
DO-201AD
DO-41
DO-15
26/tape
A-405
RL257
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Untitled
Abstract: No abstract text available
Text: Optoisolator Specifications H11B255 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Photo-Darlington Amplifier The H ] IB255 consists o f a gallium arsenide infrared em itting diode coupled with a silicon photo-Darlington amplifier in a dual in-line package. This device is also
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H11B255
IB255
60apacitance
100STÌ
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