NJL6402R-2
Abstract: No abstract text available
Text: NJL6402R-2 COBP Photo Diode for Front monitor GENERAL DESCRIPTION The NJL6402R-2 is a high-speed PIN photodiode capable of detecting in a wide wavelength range of up to infrared light from the blue-violet light. The features are low wavelength dependence and fast fall-time.
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NJL6402R-2
NJL6402R-2
405nm/650nm/780nm)
405nm/650nm/780nm,
200MHz
780nm)
220MHz
650nm)
250MHz
405nm)
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NJL6401R-3
Abstract: No abstract text available
Text: NJL6401R-3 COBP High Speed Photo Diode GENERAL DESCRIPTION The NJL6401R-3 is a high-speed PIN photodiode capable of detecting in a wide wavelength range of up to infrared light from the blue-violet light. The features are low wavelength dependence and fast fall-time.
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NJL6401R-3
NJL6401R-3
405nm/650nm/780nm)
405nm/650nm/780nm,
250MHz
780nm)
300MHz
650nm)
350MHz
405nm)
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Untitled
Abstract: No abstract text available
Text: epitex Opto-Device & Custom LED PHOTO-DIODE PD006-SMT B Lead ( Pb ) Free Product – RoHS Compliant PD006-SMT(B) SMT Type PIN-Photodiode PD006-SMT(B) is a surface mount type PIN-photodiode featuring excellent responsibility of 6ns and high photocurrent. This PIN-photodiode consists of a large chip with 0.44x0.44mm active area mounted
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PD006-SMT
44mmx0
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Untitled
Abstract: No abstract text available
Text: RL201 – RL208 2.0A STANDARD DIODE WON-TOP ELECTRONICS Pb Features Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability B A A Mechanical Data C
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RL201
RL208
DO-15,
MIL-STD-202,
DO-15
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IN914
Abstract: in916 in914 diode in914b diode in914 1N914B carton box
Text: Transys Electronics L I M I T E D HIGH SPEED SILICON SWITCHING DIODE IN914, B IN916 250mW DO- 35 Glass Axial Package FEATURES Intended for General Purpose Application. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION SYMBOL VR Reverses Voltage ( Continuous)
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IN914,
IN916
250mW
IN914/9ecutive
DO-35
IN914
in916
in914 diode
in914b
diode in914
1N914B
carton box
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1SS355
Abstract: No abstract text available
Text: Diodes SMD Type High- Speed Switching Diode 1SS355 SOD-323 Features +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm +0.1 1.3-0.1 Small surface mount type High switching speed. trr=2ns Typ. Good mountierbility,high surge resistance and reliability. +0.1
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1SS355
OD-323
100mA
1SS355
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1SS354 MARKING
Abstract: 1SS354
Text: Diodes SMD Type High- Speed Switching Diode 1SS354 SOD-323 Features +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm +0.1 1.3-0.1 Small surface mount type High switching speed. trr=2ns Typ. Good mountierbility,high surge resistance and reliability. +0.1
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1SS354
OD-323
100mA
1SS354 MARKING
1SS354
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1SS353
Abstract: 1SS353 MARKING
Text: Diodes SMD Type High- Speed Switching Diode 1SS353 SOD-323 Features +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm +0.1 1.3-0.1 Small surface mount type High switching speed. trr=2ns Typ. Good mountierbility,high surge resistance and reliability. +0.1
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1SS353
OD-323
100mA
1SS353
1SS353 MARKING
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smd dual diode code A7
Abstract: nxp Tape and Reel Information BAV756S/SG115 SMD MARKING CODE 101 SOT23-5 BAV756S BAW56S BAW56 BAW56M smd diode code A7 BAW56T
Text: BAV756S; BAW56 series High-speed switching diodes 1. Product profile 1.1 General description High-speed switching diodes, encapsulated in small Surface-Mounted Device SMD plastic packages. Table 1. Product overview Type number Package NXP JEITA JEDEC Package
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BAV756S;
BAW56
BAV756S
OT363
SC-88
BAW56
O-236AB
BAW56M
OT883
SC-101
smd dual diode code A7
nxp Tape and Reel Information
BAV756S/SG115
SMD MARKING CODE 101 SOT23-5
BAV756S
BAW56S
BAW56M
smd diode code A7
BAW56T
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DC93163
Abstract: No abstract text available
Text: ISOCOM COMPONENTS ICPL0452 / ICPL0453 / ICPL0500 / ICPL0501 1. NC DESCRIPTION The ICPL0452, ICPL0453, ICPL0500 and ICPL0501 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode
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ICPL0452
ICPL0453
ICPL0500
ICPL0501
ICPL0452,
ICPL0453,
15kV/Î
ICPL0453)
DC93163
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Untitled
Abstract: No abstract text available
Text: ISOCOM COMPONENTS ICPL2530, ICPL2531 DESCRIPTION The ICPL2530 and ICPL2531 dual channel devices each consists of an infrared emitting diode optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output transistor collector increases the speed
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ICPL2530,
ICPL2531
ICPL2530
ICPL2531
5000VRMS
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PS7841-A15
Abstract: PS7841-A15-F3
Text: FOR OPTICAL DAA 16 PIN PS7841-A15 SOP SOLID STATE RELAY FEATURES DESCRIPTION • FOR OPTICAL DAA CIRCUT Solid State Relay Photocoupler AC Input Response Diode Bridge Darlington Transistor PS7841-A15 is a solid state relay for optical DAA (Data Access Arrangment) containing a diode bridge, MOSFET,
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PS7841-A15
PS7841-A15
PS7841-A15-F3,
24-Hour
PS7841-A15-F3
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Si4816DY
Abstract: No abstract text available
Text: SPICE Device Model Si4816DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4816DY
0-to-10V
28-Jun-01
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DC93164
Abstract: icpl2631
Text: ISOCOM COMPONENTS ICPL2630 / ICPL2631 DESCRIPTION The ICPL2630 and ICPL2631 dual channel devices each consists of an infrared emitting diode, optically coupled to a high speed integrated photo detector logic gate with a strobable output. 1. Anode 2. Cathode
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ICPL2630
ICPL2631
ICPL2631
10Mbit/s
10kV/Î
ICPL2631)
5000Vrms
Ground5/12/12
DC93164
DC93164
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Untitled
Abstract: No abstract text available
Text: ZENER DIODES 1 W ATT Z E N E R DIODE/DO-41 C A SE 7 O PERATIN G AND STO RA G E T EM PERA T U R E -65°Cto +175°C _ f g : _ fft.tlEB.fe &&&&% >% •& Maximum Zener PART Dynamic Impedances Maximum Reverse Current Forward Voltage
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DIODE/DO-41
DO-201
DO-41
Q007L
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diode LR 105
Abstract: DIODE ZZ160 "bidirectional zener" do-35 ZZ110
Text: Silicon Diodes, Bidirectional Zener Diodes General Purpose and S w itching Diodes DO-35 Glass Package Type Peak Inv. Voltage PIV Max. Aver. Rectified Current l0 Power Junction Dissipationi Tempera ture Tj at 25 °C Reverse Current lR Forward Voltage Drop VF
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DO-35
BAV19
BAV20
BAV21
1N914
1N4148
1N4149
1N4150
1N4151
1N4448
diode LR 105
DIODE ZZ160
"bidirectional zener" do-35
ZZ110
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Untitled
Abstract: No abstract text available
Text: TRANSIENT VOLTAGE SUPPRESSORS 600W S E R IE S TVS DIODES / DO-15 CASE 8 600W£ ?•] n n m JL "€i Breakdown Voltage v br TYP E P6KE6.8 P6KE6.8A P6KE7.5 P6KE7.5A P6KE8.2 P6KE8.2A P6KE9.1 P6KE9.1 A P6KE10 P6KE10A P6KE11 P6KE11A P6KE12 P6KE12A P6KE13 P6KE13A
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DO-15
P6KE10
P6KE10A
P6KE11
P6KE11A
P6KE12
P6KE12A
P6KE13
P6KE13A
P6KE15
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y6 smd zener
Abstract: smd diode SOT-23 marking code Y4 Zener diode smd marking z2 sot Zener diode smd marking 23W smd y6 sot-23 smd code z16 Zener diode smd marking code 51 y smd zener diode code Y5 diode zener smd z5 sot-23 smd zener diode code y9
Text: SMD ZENER Diodes SMD® ZENER Diodes Description Mechanical Data Philips Components ZENER diodes combine the high est quality standards with state-of-the-art production equip ment to fulfill the need for generic, low-cost devices. This family offers a broad range of nominal voltage values, test
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OT-223
OD-87
OT-23
OT-223
OD-87
y6 smd zener
smd diode SOT-23 marking code Y4
Zener diode smd marking z2 sot
Zener diode smd marking 23W
smd y6 sot-23
smd code z16
Zener diode smd marking code 51 y
smd zener diode code Y5
diode zener smd z5 sot-23
smd zener diode code y9
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Untitled
Abstract: No abstract text available
Text: TRANSIENT VOLTAGE SUPRESSORS 400W SURFACE MOUNT TVS DIODES / DO-214AC CASE 2 400W £ ÿi] _ iw>f t i r _ ÆA-fe-lfS Breakdown Voltage @ It V br TYPE TFMAJ5.0 TFMAJ5.0A TFMAJ6.0 TFMAJ6.0A TFMAJ6.5 TFMAJ6.5A TFMAJ7.0 TFMAJ7.0A
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DO-214AC
TFMAJ10
TFMAJ10A
TFMAJ11
TFMAJ11A
TFMAJ12
TFMAJ12A
TFMAJ13
TFMAJ13A
TFMAJ14
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Untitled
Abstract: No abstract text available
Text: TRANSIENT VOLTAGE SUPPRESSORS 1500W SERIES TVS DIODES / 1.5KE CASE 10 1500W .Î »] "t,& Breakdown Voltage TYPE 1.5KE6.8 1.5KE6.8A 1.5KE7.5 1.5KE7.5A 1.5KE8.2 1.5KE8.2A 1.5KE9.1 1.5KE9.1A 1.5KE10 1.5KE10A 1.5KE11 1.5KE11A 1.5KE12 1.5KE12A 1.5KE13 1.5KE13A
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5KE10
5KE10A
5KE11
5KE11A
5KE12
5KE12A
5KE13
5KE13A
5KE15
5KE15A
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Untitled
Abstract: No abstract text available
Text: Generic Optoisolator Specifications_ MCA230, MCA231, MCA255 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Darlington-Connected Phototransistor T h e MCA series co n sists o f a g alliu m a rsen id e, infrared em ittin g d io d e co u p le d w ith a silic o n p h o to -D a rlin g to n
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MCA230,
MCA231,
MCA255
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diode sy 164 dl
Abstract: diode sy 164 02N2222 b6045
Text: MOTOROLA MBR6035 MBR6045 • SEMICONDUCTOR TECHNICAL DATA Switchm ode Power Rectifiers MBR6045 Is a Motorola Preferred Device . using a platinum barrier metal in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact.
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MBR6035
MBR6045
MBR6045
diode sy 164 dl
diode sy 164
02N2222
b6045
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1.5FMCJ220
Abstract: No abstract text available
Text: TRANSIENT VOLTAGE SUPPRESSORS 1500W SERIES TVS DIODES / DO-214AB CASE 4 1500W & ?>J t J t # #'] t Breakdown Voltage V TYPE 1.5FMCJ6.8 1.5FMCJ6.8A 1.5FMCJ7.5 1.5FMCJ7.5A 1.5FMCJ8.2 1.5FMCJ8.2A 1.5FMCJ9.1
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DO-214AB
5FMCJ10
5FMCJ10A
5FMCJ11
5FMCJ11A
5FMCJ12
5FMCJ12A
5FMCJ13
5FMCJ13A
5FMCJ15
1.5FMCJ220
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Untitled
Abstract: No abstract text available
Text: TRANSIENT VOLTAGE SUPPRESSORS 0# % i t l ' i i &n *^5^ 1500W SURFACE MOUNT TVS DIODES / /]V;Tsr"ta5 Breakdown Voltage V br TYPE TFMCJ5.0 TFMCJ5.0A TFMCJ6.0 TFMCJ6.0A TFMCJ6.5 TFMCJ6.5A TFMCJ7.0 TFMCJ7.0A TFMCJ7.5 TFMCJ7.5A TFMCJ8.0 TFMCJ8.0A TFMCJ8.5 TFMCJ8.5A
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TFMCJ10
TFMCJ10A
TFMCJ11
TFMCJ11A
TFMCJ12
TFMCJ12A
TFMCJ13
TFMCJ13A
TFMCJ14
TFMCJ14A
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