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    RL 255 DIODE Search Results

    RL 255 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    RL 255 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NJL6402R-2

    Abstract: No abstract text available
    Text: NJL6402R-2 COBP Photo Diode for Front monitor GENERAL DESCRIPTION The NJL6402R-2 is a high-speed PIN photodiode capable of detecting in a wide wavelength range of up to infrared light from the blue-violet light. The features are low wavelength dependence and fast fall-time.


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    PDF NJL6402R-2 NJL6402R-2 405nm/650nm/780nm) 405nm/650nm/780nm, 200MHz 780nm) 220MHz 650nm) 250MHz 405nm)

    NJL6401R-3

    Abstract: No abstract text available
    Text: NJL6401R-3 COBP High Speed Photo Diode GENERAL DESCRIPTION The NJL6401R-3 is a high-speed PIN photodiode capable of detecting in a wide wavelength range of up to infrared light from the blue-violet light. The features are low wavelength dependence and fast fall-time.


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    PDF NJL6401R-3 NJL6401R-3 405nm/650nm/780nm) 405nm/650nm/780nm, 250MHz 780nm) 300MHz 650nm) 350MHz 405nm)

    Untitled

    Abstract: No abstract text available
    Text: epitex Opto-Device & Custom LED PHOTO-DIODE PD006-SMT B Lead ( Pb ) Free Product – RoHS Compliant PD006-SMT(B) SMT Type PIN-Photodiode PD006-SMT(B) is a surface mount type PIN-photodiode featuring excellent responsibility of 6ns and high photocurrent. This PIN-photodiode consists of a large chip with 0.44x0.44mm active area mounted


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    PDF PD006-SMT 44mmx0

    Untitled

    Abstract: No abstract text available
    Text: RL201 RL208 2.0A STANDARD DIODE WON-TOP ELECTRONICS Pb Features  Diffused Junction     Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability B A A Mechanical Data        C


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    PDF RL201 RL208 DO-15, MIL-STD-202, DO-15

    IN914

    Abstract: in916 in914 diode in914b diode in914 1N914B carton box
    Text: Transys Electronics L I M I T E D HIGH SPEED SILICON SWITCHING DIODE IN914, B IN916 250mW DO- 35 Glass Axial Package FEATURES Intended for General Purpose Application. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION SYMBOL VR Reverses Voltage ( Continuous)


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    PDF IN914, IN916 250mW IN914/9ecutive DO-35 IN914 in916 in914 diode in914b diode in914 1N914B carton box

    1SS355

    Abstract: No abstract text available
    Text: Diodes SMD Type High- Speed Switching Diode 1SS355 SOD-323 Features +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm +0.1 1.3-0.1 Small surface mount type High switching speed. trr=2ns Typ. Good mountierbility,high surge resistance and reliability. +0.1


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    PDF 1SS355 OD-323 100mA 1SS355

    1SS354 MARKING

    Abstract: 1SS354
    Text: Diodes SMD Type High- Speed Switching Diode 1SS354 SOD-323 Features +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm +0.1 1.3-0.1 Small surface mount type High switching speed. trr=2ns Typ. Good mountierbility,high surge resistance and reliability. +0.1


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    PDF 1SS354 OD-323 100mA 1SS354 MARKING 1SS354

    1SS353

    Abstract: 1SS353 MARKING
    Text: Diodes SMD Type High- Speed Switching Diode 1SS353 SOD-323 Features +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm +0.1 1.3-0.1 Small surface mount type High switching speed. trr=2ns Typ. Good mountierbility,high surge resistance and reliability. +0.1


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    PDF 1SS353 OD-323 100mA 1SS353 1SS353 MARKING

    smd dual diode code A7

    Abstract: nxp Tape and Reel Information BAV756S/SG115 SMD MARKING CODE 101 SOT23-5 BAV756S BAW56S BAW56 BAW56M smd diode code A7 BAW56T
    Text: BAV756S; BAW56 series High-speed switching diodes 1. Product profile 1.1 General description High-speed switching diodes, encapsulated in small Surface-Mounted Device SMD plastic packages. Table 1. Product overview Type number Package NXP JEITA JEDEC Package


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    PDF BAV756S; BAW56 BAV756S OT363 SC-88 BAW56 O-236AB BAW56M OT883 SC-101 smd dual diode code A7 nxp Tape and Reel Information BAV756S/SG115 SMD MARKING CODE 101 SOT23-5 BAV756S BAW56S BAW56M smd diode code A7 BAW56T

    DC93163

    Abstract: No abstract text available
    Text: ISOCOM COMPONENTS ICPL0452 / ICPL0453 / ICPL0500 / ICPL0501 1. NC DESCRIPTION The ICPL0452, ICPL0453, ICPL0500 and ICPL0501 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode


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    PDF ICPL0452 ICPL0453 ICPL0500 ICPL0501 ICPL0452, ICPL0453, 15kV/Î ICPL0453) DC93163

    Untitled

    Abstract: No abstract text available
    Text: ISOCOM COMPONENTS ICPL2530, ICPL2531 DESCRIPTION The ICPL2530 and ICPL2531 dual channel devices each consists of an infrared emitting diode optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output transistor collector increases the speed


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    PDF ICPL2530, ICPL2531 ICPL2530 ICPL2531 5000VRMS

    PS7841-A15

    Abstract: PS7841-A15-F3
    Text: FOR OPTICAL DAA 16 PIN PS7841-A15 SOP SOLID STATE RELAY FEATURES DESCRIPTION • FOR OPTICAL DAA CIRCUT Solid State Relay Photocoupler AC Input Response Diode Bridge Darlington Transistor PS7841-A15 is a solid state relay for optical DAA (Data Access Arrangment) containing a diode bridge, MOSFET,


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    PDF PS7841-A15 PS7841-A15 PS7841-A15-F3, 24-Hour PS7841-A15-F3

    Si4816DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4816DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    PDF Si4816DY 0-to-10V 28-Jun-01

    DC93164

    Abstract: icpl2631
    Text: ISOCOM COMPONENTS ICPL2630 / ICPL2631 DESCRIPTION The ICPL2630 and ICPL2631 dual channel devices each consists of an infrared emitting diode, optically coupled to a high speed integrated photo detector logic gate with a strobable output. 1. Anode 2. Cathode


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    PDF ICPL2630 ICPL2631 ICPL2631 10Mbit/s 10kV/Î ICPL2631) 5000Vrms Ground5/12/12 DC93164 DC93164

    Untitled

    Abstract: No abstract text available
    Text: ZENER DIODES 1 W ATT Z E N E R DIODE/DO-41 C A SE 7 O PERATIN G AND STO RA G E T EM PERA T U R E -65°Cto +175°C _ f g : _ fft.tlEB.fe &&&&% >% •& Maximum Zener PART Dynamic Impedances Maximum Reverse Current Forward Voltage


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    PDF DIODE/DO-41 DO-201 DO-41 Q007L

    diode LR 105

    Abstract: DIODE ZZ160 "bidirectional zener" do-35 ZZ110
    Text: Silicon Diodes, Bidirectional Zener Diodes General Purpose and S w itching Diodes DO-35 Glass Package Type Peak Inv. Voltage PIV Max. Aver. Rectified Current l0 Power Junction Dissipationi Tempera­ ture Tj at 25 °C Reverse Current lR Forward Voltage Drop VF


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    PDF DO-35 BAV19 BAV20 BAV21 1N914 1N4148 1N4149 1N4150 1N4151 1N4448 diode LR 105 DIODE ZZ160 "bidirectional zener" do-35 ZZ110

    Untitled

    Abstract: No abstract text available
    Text: TRANSIENT VOLTAGE SUPPRESSORS 600W S E R IE S TVS DIODES / DO-15 CASE 8 600W£ ?•] n n m JL "€i Breakdown Voltage v br TYP E P6KE6.8 P6KE6.8A P6KE7.5 P6KE7.5A P6KE8.2 P6KE8.2A P6KE9.1 P6KE9.1 A P6KE10 P6KE10A P6KE11 P6KE11A P6KE12 P6KE12A P6KE13 P6KE13A


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    PDF DO-15 P6KE10 P6KE10A P6KE11 P6KE11A P6KE12 P6KE12A P6KE13 P6KE13A P6KE15

    y6 smd zener

    Abstract: smd diode SOT-23 marking code Y4 Zener diode smd marking z2 sot Zener diode smd marking 23W smd y6 sot-23 smd code z16 Zener diode smd marking code 51 y smd zener diode code Y5 diode zener smd z5 sot-23 smd zener diode code y9
    Text: SMD ZENER Diodes SMD® ZENER Diodes Description Mechanical Data Philips Components ZENER diodes combine the high­ est quality standards with state-of-the-art production equip­ ment to fulfill the need for generic, low-cost devices. This family offers a broad range of nominal voltage values, test


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    PDF OT-223 OD-87 OT-23 OT-223 OD-87 y6 smd zener smd diode SOT-23 marking code Y4 Zener diode smd marking z2 sot Zener diode smd marking 23W smd y6 sot-23 smd code z16 Zener diode smd marking code 51 y smd zener diode code Y5 diode zener smd z5 sot-23 smd zener diode code y9

    Untitled

    Abstract: No abstract text available
    Text: TRANSIENT VOLTAGE SUPRESSORS 400W SURFACE MOUNT TVS DIODES / DO-214AC CASE 2 400W £ ÿi] _ iw>f t i r _ ÆA-fe-lfS Breakdown Voltage @ It V br TYPE TFMAJ5.0 TFMAJ5.0A TFMAJ6.0 TFMAJ6.0A TFMAJ6.5 TFMAJ6.5A TFMAJ7.0 TFMAJ7.0A


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    PDF DO-214AC TFMAJ10 TFMAJ10A TFMAJ11 TFMAJ11A TFMAJ12 TFMAJ12A TFMAJ13 TFMAJ13A TFMAJ14

    Untitled

    Abstract: No abstract text available
    Text: TRANSIENT VOLTAGE SUPPRESSORS 1500W SERIES TVS DIODES / 1.5KE CASE 10 1500W .Î »] "t,& Breakdown Voltage TYPE 1.5KE6.8 1.5KE6.8A 1.5KE7.5 1.5KE7.5A 1.5KE8.2 1.5KE8.2A 1.5KE9.1 1.5KE9.1A 1.5KE10 1.5KE10A 1.5KE11 1.5KE11A 1.5KE12 1.5KE12A 1.5KE13 1.5KE13A


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    PDF 5KE10 5KE10A 5KE11 5KE11A 5KE12 5KE12A 5KE13 5KE13A 5KE15 5KE15A

    Untitled

    Abstract: No abstract text available
    Text: Generic Optoisolator Specifications_ MCA230, MCA231, MCA255 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Darlington-Connected Phototransistor T h e MCA series co n sists o f a g alliu m a rsen id e, infrared em ittin g d io d e co u p le d w ith a silic o n p h o to -D a rlin g to n


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    PDF MCA230, MCA231, MCA255

    diode sy 164 dl

    Abstract: diode sy 164 02N2222 b6045
    Text: MOTOROLA MBR6035 MBR6045 • SEMICONDUCTOR TECHNICAL DATA Switchm ode Power Rectifiers MBR6045 Is a Motorola Preferred Device . using a platinum barrier metal in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact.


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    PDF MBR6035 MBR6045 MBR6045 diode sy 164 dl diode sy 164 02N2222 b6045

    1.5FMCJ220

    Abstract: No abstract text available
    Text: TRANSIENT VOLTAGE SUPPRESSORS 1500W SERIES TVS DIODES / DO-214AB CASE 4 1500W & ?>J t J t # #'] t Breakdown Voltage V TYPE 1.5FMCJ6.8 1.5FMCJ6.8A 1.5FMCJ7.5 1.5FMCJ7.5A 1.5FMCJ8.2 1.5FMCJ8.2A 1.5FMCJ9.1


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    PDF DO-214AB 5FMCJ10 5FMCJ10A 5FMCJ11 5FMCJ11A 5FMCJ12 5FMCJ12A 5FMCJ13 5FMCJ13A 5FMCJ15 1.5FMCJ220

    Untitled

    Abstract: No abstract text available
    Text: TRANSIENT VOLTAGE SUPPRESSORS 0# % i t l ' i i &n *^5^ 1500W SURFACE MOUNT TVS DIODES / /]V;Tsr"ta5 Breakdown Voltage V br TYPE TFMCJ5.0 TFMCJ5.0A TFMCJ6.0 TFMCJ6.0A TFMCJ6.5 TFMCJ6.5A TFMCJ7.0 TFMCJ7.0A TFMCJ7.5 TFMCJ7.5A TFMCJ8.0 TFMCJ8.0A TFMCJ8.5 TFMCJ8.5A


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    PDF TFMCJ10 TFMCJ10A TFMCJ11 TFMCJ11A TFMCJ12 TFMCJ12A TFMCJ13 TFMCJ13A TFMCJ14 TFMCJ14A