MT44K32M18
Abstract: No abstract text available
Text: Advance‡ 576Mb: x18, x36 RLDRAM 3 Features RLDRAM 3 MT44K32M18 – 2 Meg x 18 x 16 Banks MT44K16M36 – 1 Meg x 36 x 16 Banks Options1 Features • Clock cycle and tRC timing – 0.93ns and tRC MIN = 8ns (RL3-2133) – 0.93ns and tRC (MIN) = 10ns (RL3-2133)
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576Mb:
MT44K32M18
MT44K16M36
09005aef84003617
MT44K32M18
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PDF
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MT44K16M36RB
Abstract: No abstract text available
Text: 576Mb: x18, x36 RLDRAM 3 Features RLDRAM 3 MT44K32M18 – 2 Meg x 18 x 16 Banks MT44K16M36 – 1 Meg x 36 x 16 Banks Options1 Features • Clock cycle and tRC timing – 0.93ns and tRC MIN = 8ns (RL3-2133) – 0.93ns and tRC (MIN) = 10ns (RL3-2133) – 1.07ns and tRC (MIN) = 8ns
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Original
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576Mb:
MT44K32M18
MT44K16M36
RL3-2133)
RL3-1866)
RL3-1600)
MT44K16M36RB
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PDF
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576mb
Abstract: MT44K16M36PA-093E
Text: 576Mb: x18, x36 RLDRAM 3 Features RLDRAM 3 MT44K32M18 – 2 Meg x 18 x 16 Banks MT44K16M36 – 1 Meg x 36 x 16 Banks Options1 Features • Clock cycle and tRC timing – 0.93ns and tRC MIN = 8ns (RL3-2133) – 0.93ns and tRC (MIN) = 10ns (RL3-2133) – 1.07ns and tRC (MIN) = 8ns
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576Mb:
MT44K32M18
MT44K16M36
09005aef84003617
576mb
MT44K16M36PA-093E
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PDF
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MICRON BGA PART MARKING
Abstract: RTT120 MT44K64M18 MT44K RLDRAM 3 MT44K32M36
Text: 1Gb: x18, x36 TwinDie RLDRAM 3 Features TwinDie RLDRAM 3 MT44K64M18 – 2 Meg x 18 x 16 Banks x 2 Ranks MT44K32M36 – 2 Meg x 36 x 16 Banks Features Options Marking • 168-ball FBGA package – 1.25ns and tRCmin = 10ns RL3-1600 – 1.25ns and tRCmin = 12ns (RL3-1600)
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MT44K64M18
MT44K32M36
576Mb
MT44K32M18
MT44K64M18
MT44K32M36.
MT44K32M36RCT-125
MICRON BGA PART MARKING
RTT120
MT44K
RLDRAM 3
MT44K32M36
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PDF
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MICRON BGA PART MARKING
Abstract: MT44K64M18 MT44K32M36 RTT120 micron power 120w MT44K
Text: 1Gb: x18, x36 TwinDie RLDRAM 3 Features TwinDie RLDRAM 3 MT44K64M18 – 2 Meg x 18 x 16 Banks x 2 Ranks MT44K32M36 – 2 Meg x 36 x 16 Banks Features Options Marking • 168-ball FBGA package – 1.25ns and tRCmin = 10ns RL3-1600 – 1.25ns and tRCmin = 12ns (RL3-1600)
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Original
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MT44K64M18
MT44K32M36
576Mb
MT44K32M18
MT44K64M18
MT44K32M36.
MT44K32M36RCT-125
MICRON BGA PART MARKING
MT44K32M36
RTT120
micron power 120w
MT44K
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PDF
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Untitled
Abstract: No abstract text available
Text: 576Mb: x18, x36 RLDRAM 3 Features RLDRAM 3 MT44K32M18 – 2 Meg x 18 x 16 Banks MT44K16M36 – 1 Meg x 36 x 16 Banks Options1 Features • Clock cycle and tRC timing – 0.93ns and tRC MIN = 8ns (RL3-2133) – 0.93ns and tRC (MIN) = 10ns (RL3-2133) – 1.07ns and tRC (MIN) = 8ns
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Original
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576Mb:
MT44K32M18
MT44K16M36
RL3-2133)
RL3-1866)
RL3-1600)
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PDF
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Untitled
Abstract: No abstract text available
Text: 576Mb: x18, x36 RLDRAM 3 Features RLDRAM 3 MT44K32M18 – 2 Meg x 18 x 16 Banks MT44K16M36 – 1 Meg x 36 x 16 Banks Options1 Features • Clock cycle and tRC timing – 0.93ns and tRC MIN = 8ns (RL3-2133) – 0.93ns and tRC (MIN) = 10ns (RL3-2133) – 1.07ns and tRC (MIN) = 8ns
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Original
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576Mb:
MT44K32M18
MT44K16M36
RL3-2133)
RL3-1866)
RL3-1600)
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PDF
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Untitled
Abstract: No abstract text available
Text: 576Mb: x18, x36 RLDRAM 3 Features RLDRAM 3 MT44K32M18 – 2 Meg x 18 x 16 Banks MT44K16M36 – 1 Meg x 36 x 16 Banks Options1 Features • Clock cycle and tRC timing – 0.93ns and tRC MIN = 8ns (RL3-2133) – 0.93ns and tRC (MIN) = 10ns (RL3-2133) – 1.07ns and tRC (MIN) = 8ns
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Original
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576Mb:
MT44K32M18
MT44K16M36
RL3-2133)
RL3-1866)
RL3-1600)
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PDF
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MT44K32M36
Abstract: No abstract text available
Text: 1Gb: x18, x36 TwinDie RLDRAM 3 Features TwinDie RLDRAM 3 MT44K64M18 – 2 Meg x 18 x 16 Banks x 2 Ranks MT44K32M36 – 2 Meg x 36 x 16 Banks Features Options Marking • 168-ball FBGA package – 1.25ns and tRC MIN = 10ns (RL3-1600) – 1.25ns and tRC (MIN) = 12ns
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Original
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MT44K64M18
MT44K32M36
168-ball
RL3-1600)
576Mb
09005aef84ebb323
MT44K32M36
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PDF
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MT44K32M36
Abstract: zq 405-MF
Text: 1.125Gb: x18, x36 TwinDie RLDRAM 3 Features TwinDie RLDRAM 3 MT44K64M18 – 2 Meg x 18 x 16 Banks x 2 Ranks MT44K32M36 – 2 Meg x 36 x 16 Banks Features Options Marking • 168-ball FBGA package – 1.07ns and tRC MIN = 8ns (RL3-1866) – 1.07ns and tRC (MIN) = 10ns
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125Gb:
MT44K64M18
MT44K32M36
168-ball
RL3-1866)
RL3-1600)
576Mb
MT44K32M36
zq 405-MF
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PDF
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MSDR
Abstract: mobile dram
Text: Mobile DRAM Stack Code Information 1/3 Last Updated : April 2009 K3XXXXXXXX - XXXXXXX 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 1. Memory (K) 6~7. B-Port I/F & Density & Vcc & Org. Co de 2. Mobile DRAM Stack : 3 I/F Den VDD 1 00 3. Small Classification
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TRCD15ns,
TRP15ns
MSDR
mobile dram
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PDF
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RH A4 2A 250V
Abstract: oven rtd sensor IEC751 pa2009 PT100 ABB
Text: Data Sheet 100mm Process Recorder SS/SR100B_5 SR100B 3- or 6-trace recording on a 100mm chart – common time base for instant process comparison High clarity liquid crystal display – for process value, units and channel tags Universal process inputs
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100mm
SR100B
IP65/NEMA3,
100mmion.
C100/0700)
SS/SR100B
RH A4 2A 250V
oven rtd sensor
IEC751
pa2009
PT100 ABB
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PDF
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copper alloy C750
Abstract: No abstract text available
Text: Quartz Silica Powder CURRENT SENSE / LOW OHM CERAMIC ENCASED TYPE All Welded Construction RL SERIES LOW OHM / LOW INDUCTANCE Power Ceramic Encased Resistors Industrial Applications Tinned Copper Terminals Fire Proof Ceramic Housing Alloy Electrical Resistance Ribbon
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R0015
copper alloy C750
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PDF
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HTR resistors
Abstract: resistor 0.1 Ohm 5w ceramic R005J
Text: www.htr-india.com Quartz Silica Powder CURRENT SENSE / LOW OHM CERAMIC ENCASED TYPE All Welded Construction RL SERIES LOW OHM / LOW INDUCTANCE Power Ceramic Encased Resistors Industrial Applications Tinned Copper Terminals Fire Proof Ceramic Housing Alloy Electrical
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R0015
HTR resistors
resistor 0.1 Ohm 5w ceramic
R005J
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PDF
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intersil DATE CODE MARKING
Abstract: intersil DaTE CODE ISL22346WMVEP MO-153-AC TB347 RL3 marking AC Potentiometers RW3 RW2 marking intersil small package DATE CODE MARKING intersil LOT TRACEABILITY
Text: ISL22346WMVEP Quad Digitally Controlled Potentiometers XDCP Data Sheet December 17, 2007 FN6624.0 Low Noise, Low Power I2C® Bus, 128 Taps Features The ISL22346WMVEP integrates four digitally controlled potentiometers (DCP) and non-volatile memory on a
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ISL22346WMVEP
FN6624
ISL22346WMVEP
V62/08605-01XE
intersil DATE CODE MARKING
intersil DaTE CODE
MO-153-AC
TB347
RL3 marking
AC Potentiometers RW3
RW2 marking
intersil small package DATE CODE MARKING
intersil LOT TRACEABILITY
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PDF
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168-FBGA
Abstract: 168FBGA Mobile SDRAM 152-FBGA marking code hf FBGA 9 x 12 package tray 152FBGA FBGA 8 x 14 package tray DDR2 x32 device marking code S4
Text: Mobile-SDR/DDR Code Information 1/3 Last Updated : July 2009 K4XXXXXXXX - XXXXXXX 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 1. Memory (K) 12. Package - Mobile-SDRAM(M) B : 54-CSP(LF, HF) H : 90-FBGA_S(LF, HF) 2. DRAM : 4 3. Small Classification M : Mobile-SDRAM (Discrete Device for Mobile)
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54-CSP
90-FBGA
168-FBGA
60-FBGA
152-FBGA
4K/64ms
8K/64ms
168FBGA
Mobile SDRAM
marking code hf
FBGA 9 x 12 package tray
152FBGA
FBGA 8 x 14 package tray
DDR2 x32
device marking code S4
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PDF
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intersil DATE CODE MARKING
Abstract: MO-153-AC INTERSIL TRACEABILITY LOT PART MARKING
Text: ISL22346WM Quad Digitally Controlled Potentiometers XDCP Data Sheet November 11, 2011 FN6624.1 Low Noise, Low Power I2C Bus, 128 Taps Features The ISL22346WMVEP integrates four digitally controlled potentiometers (DCP) and non-volatile memory on a monolithic CMOS integrated circuit.
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ISL22346WM
FN6624
ISL22346WMVEP
intersil DATE CODE MARKING
MO-153-AC
INTERSIL TRACEABILITY LOT PART MARKING
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PDF
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samsung K9 flash
Abstract: Samsung EOL 168FBGA samsung nor flash samsung s6 K4X1G163PC-FGC3 k4 MARKING CODE samsung K4 samsung cdram
Text: SAMSUNG's Digital World go contents DRAM ● ● ● ● Computing ❍ DDR3 Products ❍ DDR2 Products ❍ DDR Products ❍ SDRAM Products ❍ System Compatibility ❍ EOL Products Consumer ❍ Products Mobile ❍ Products ❍ EOL Products Graphic & Gaming
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800MHz-40ns
i850E
K4X1G163PC
07-Sep-2010
D18ns
TRP18ns
TRCD18ns
samsung K9 flash
Samsung EOL
168FBGA
samsung nor flash
samsung s6
K4X1G163PC-FGC3
k4 MARKING CODE
samsung K4
samsung cdram
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PDF
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SCK 303
Abstract: No abstract text available
Text: X9401 Low Noise/Low Power/SPI Bus Data Sheet PRELIMINARY March 4, 2005 Quad, 64 Tap, Digitally Controlled Potentiometer XDCP FN8190.0 DESCRIPTION The X9401 integrates 4 digitally controlled potentiometers (XDCP) on a monolithic CMOS integrated microcircuit.
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X9401
FN8190
16-bytes
24-lead
X9401
SCK 303
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PDF
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Untitled
Abstract: No abstract text available
Text: X9400 Low Noise/Low Power/SPI Bus Data Sheet March 4, 2005 Quad Digitally Controlled Potentiometers XDCP FN8189.0 DESCRIPTION The X9400 integrates four digitally controlled potentiometers (XDCPs) on a monolithic CMOS integrated circuit. FEATURES • Four potentiometers per package
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X9400
FN8189
24-lead
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PDF
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Untitled
Abstract: No abstract text available
Text: Quartz Silica Powder All Welded Construction RL SERIES LOW OHM / LOW INDUCTANCE Power Ceramic Encased Resistors Industrial Applications Tinned Copper Terminals Fire Proof Ceramic Housing CURRENT SENSE / LOW OHM CERAMIC ENCASED TYPE Alloy Electrical Resistance Ribbon
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Original
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NNP3-53-5
5BQF3FFM3-533-53
PS5BQF3FFMQBDLJOHo3-53
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PDF
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LTC1068
Abstract: LTC1068-200 LTC1068-200CG LTC1068-25 LTC1068-50 LTC1068-50CG LTC1068CG
Text: LTC1068 Series Clock-Tunable, Quad Second Order, Filter Building Blocks U FEATURES DESCRIPTIO • The LTC 1068 product family consists of four monolithic clock-tunable filter building blocks. Each product contains four matched, low noise, high accuracy 2nd order switchedcapacitor filter sections. An external clock tunes the center
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LTC1068
LTC1068
LTC1068-200)
LTC1068)
LTC1068-50)
LTC1068-25)
LTC1064
100kHz,
LTC1067/LTC1067-50
LTC1164
LTC1068-200
LTC1068-200CG
LTC1068-25
LTC1068-50
LTC1068-50CG
LTC1068CG
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PDF
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Untitled
Abstract: No abstract text available
Text: All Welded Construction Quartz Silica Powder Tinned Copper Terminals Alloy Electrical Resistance Ribbon Fire Proof Ceramic Housing CURRENT SENSE/LOW OHM CERAMIC ENCASED TYPE RL SERIES LOW OHM / LOW INDUCTANCE Power Ceramic Encased Resistors Industrial Applications
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PDF
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Untitled
Abstract: No abstract text available
Text: LTC1068 Series Clock-Tunable, Quad Second Order, Filter Building Blocks FEATURES • ■ ■ ■ U ■ DESCRIPTIO Four Identical 2nd Order Filter Sections in an SSOP Package 2nd Order Section Center Frequency Error: ±0.3% Typical and ±0.8% Maximum Low Noise per 2nd Order Section, Q ≤ 5:
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LTC1068
LTC1068-200
LTC1068-50
LTC1068-25
LTC1068-50
LTC1068-200,
25kHz;
LTC1068,
50kHz;
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PDF
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