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C1206C104KRAC7800 Abstract: 100b6r8 AGR09045E AGR09045EF AGR09045EU JESD22-C101A RM73B2B103J 100B470JW Text: AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	PDF	AGR09045E Hz--895 AGR09045E DS04-295RFPP DS04-198RFPP) C1206C104KRAC7800 100b6r8 AGR09045EF AGR09045EU JESD22-C101A RM73B2B103J 100B470JW
Untitled Abstract: No abstract text available Text: Preliminary Data Sheet May 2004 AGR09030E 30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	PDF	AGR09030E Hz--895 DS04-197RFPP DS04-149RFPP)
140-A525-SMD Abstract: Z1 SMD agere c8 c1 atc600 AGRB03GM JESD22-C101A Sprague Electric SMD MOSFET N Z4 agere c8 vj1206y223kxa Text: Preliminary Data Sheet November 2004 AGRB03GM 3 W, 100 MHz—2.1 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 865 MHz to 895 MHz The AGRB03GM is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor	Original	PDF	AGRB03GM AGRB03GM IS-95 DS04-259RFPP 140-A525-SMD Z1 SMD agere c8 c1 atc600 JESD22-C101A Sprague Electric SMD MOSFET N Z4 agere c8 vj1206y223kxa
AGRC10GM Abstract: JESD22-C101A mosfet 6 ghz z823 1661 mhz Text: Preliminary Data Sheet November 2004 AGRC10GM 10 W, 2.1 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 1930 MHz to 1990 MHz PCS The AGRC10GM (1.0 GHz to 2.1 GHz) is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor	Original	PDF	AGRC10GM AGRC10GM DS04-260RFPP JESD22-C101A mosfet 6 ghz z823 1661 mhz
J293 Abstract: 100A470JW RM73B2B100J Transistor Z17 100B100JW AGR18125E AGR18125EF AGR18125EU JESD22-C101A Text: Product Brief AGR18125E 125 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18125E is a 125 W, 26 V, N-channel goldmetallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor	Original	PDF	AGR18125E AGR18125E AGR18125EF AGR18125XF M-AGR21125F 12-digit J293 100A470JW RM73B2B100J Transistor Z17 100B100JW AGR18125EF AGR18125EU JESD22-C101A
AGR09045E Abstract: AGR09045EF AGR09045EU JESD22-C101A RM73B2B103J Text: Preliminary Data Sheet October 2004 AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	PDF	AGR09045E Hz--895 AGR09045E package9-9138 DS04-295RFPP DS04-198RFPP) AGR09045EF AGR09045EU JESD22-C101A RM73B2B103J
AGR09045XUM Abstract: JESD22-C101A RF35 z24 mosfet RK73H2A10R0F Text: Preliminary Data Sheet April 2004 AGR09045XUM 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045XUM is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	PDF	AGR09045XUM Hz--895 AGR09045XUM DS04-138RFPP PB04-071RFPP) JESD22-C101A RF35 z24 mosfet RK73H2A10R0F
74ac14 inverter oscillator diagrams Abstract: ECWU1H104JB9 4816p-001-103 4816P-001 4816P-001-472 MURATA BLM DS1267S10 HEADER20 schottky DIODE MOTOROLA B14 RK73H2B1001F Text: Emulator Module User’s Manual N O N - D I S C L O S U R E M68EML08KX A G R E E M E N T R E Q U I R E D M68EML08KXUM/D - Rev 1 User’s Manual Important Notice to Users While every effort has been made to ensure the accuracy of all information in this document, Motorola	Original	PDF	M68EML08KX M68EML08KXUM/D M68EML08KXUM/D-Rev 74ac14 inverter oscillator diagrams ECWU1H104JB9 4816p-001-103 4816P-001 4816P-001-472 MURATA BLM DS1267S10 HEADER20 schottky DIODE MOTOROLA B14 RK73H2B1001F
RM73B2B103J Abstract: C1206C104KRAC7800 100B100JW DS02-219RFPP Text: Preliminary Data Sheet July 2003 AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	PDF	AGR09045E Hz--895 DS03-058RFPP DS02-219RFPP) RM73B2B103J C1206C104KRAC7800 100B100JW DS02-219RFPP
Untitled Abstract: No abstract text available Text: Preliminary Data Sheet November 2003 AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	PDF	AGR09045E Hz--895 DS04-026RFPP DS03-058RFPP)
Untitled Abstract: No abstract text available Text: Preliminary Data Sheet November 2003 AGR09030E 30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	PDF	AGR09030E Hz--895 DS04-025RFPP DS02-218RFPP)
AGR09030E Abstract: AGR09030EF AGR09030EU JESD22-C101A J02-1 Text: Preliminary Data Sheet April 2004 AGR09030E 30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	PDF	AGR09030E Hz--895 AGR09030E DS04-149RFPP DS04-025RFPP) AGR09030EF AGR09030EU JESD22-C101A J02-1
JESD22-C101A Abstract: AGR09060GF AGR09060GU 06F150 Text: Preliminary Data Sheet October 2004 AGR09060G 60 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09060G is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	PDF	AGR09060G Hz--895 AGR09060G DS02-022RFPP JESD22-C101A AGR09060GF AGR09060GU 06F150
AGR09045E Abstract: AGR09045EF AGR09045EU JESD22-C101A Sprague Electric Capacitor VJ1206Y222 Text: Preliminary Data Sheet April 2004 AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	PDF	AGR09045E Hz--895 AGR09045E DS04-150RFPP DS04-026RFPP) AGR09045EF AGR09045EU JESD22-C101A Sprague Electric Capacitor VJ1206Y222

C1206C104KRAC7800 Abstract: RM73B2B473J Text: Preliminary Data Sheet August 2003 AGR09030E 30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	PDF	AGR09030E Hz--895 DS02-218RFPP C1206C104KRAC7800 RM73B2B473J
Untitled Abstract: No abstract text available Text: Preliminary Data Sheet May 2004 AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	PDF	AGR09045E Hz--895 DS04-198RFPP DS04-150RFPP)
RK73H2A10R0F Abstract: AGR09045GUM JESD22-C101A RF35 RM73B2b103j z24 mosfet Text: Preliminary Data Sheet October 2004 AGR09045GUM 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045GUM is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	PDF	AGR09045GUM Hz--895 AGR09045GUM DS05-015RFPP DS04-138RFPP) RK73H2A10R0F JESD22-C101A RF35 RM73B2b103j z24 mosfet
AGR09045E Abstract: AGR09045EF AGR09045EU JESD22-C101A cdm 316 j0101 J0316 grm40x7r103k100al RM73B2B103J Text: AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	PDF	AGR09045E Hz--895 AGR09045E AGR09045EU AGR09045EF AGR09045EF AGR09045EU JESD22-C101A cdm 316 j0101 J0316 grm40x7r103k100al RM73B2B103J